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We compare differences in parametric degradation for CCDs irradiated to the same displacement damage dose with 10-MeV and 50-MeV electrons. Charge transfer efficiency degradation was observed to not scale with NIEL for small signals.
A 20 element monolithic InSb charge coupled device (CCD) detector array was measured under low background conditions to assess its potential for orbital astronomical applications. At a temperature of 64 K, previous results for charge transfer efficiency (CTE) were reproduced, and a sensitivity of about 2 x 10 to the minus 15th power joules was measured. At 27 and 6 K, extended integration times were achieved, but CTE was substantially degraded. The noise was approximately 6000 charges, which was in excess of the level where statistical fluctuations from the illumination could be detected. A telescope demonstration was performed showing that the array sensitivity and difficulty of operation were not substantially different from laboratory levels. Ways in which the device could be improved for astronomical applications were discussed.
We describe recent technology developments aimed at large CCD imagers for space based applications in the visible and UV. Some of the principal areas of effort include work on reducing device degradation in the natural space-radiation environment, improvements in quantum efficiency in the visible and UV, and larger-device formats. One of the most serious hazards for space based CCD's operating at low signal levels is the displacement damage resulting from bombardment by energetic protons. Such damage degrades charge-transfer efficiency and increases dark current. We have achieved improved hardness to proton-induced displacement damage by selective ion implants into the CCD channel and by reduced temperature of operation. To attain high quantum efficiency across the visible and UV we have developed a technology for back-illuminated CCD's. With suitable antireflection (AR) coatings such devices have quantum efficiencies near 90 percent in the 500-700-nm band. In the UV band from 200 to 400 nm, where it is difficult to find coatings that are sufficiently transparent and can provide good matching to the high refractive index of silicon, we have been able to substantially increase the quantum efficiency using a thin film of HfO2 as an AR coating. These technology efforts were applied to a 420 x 420-pixel frame-transfer imager, and future work will be extended to a 1024 x 1024-pixel device now under development.
Recent developments of scientific CCDs have produced sensors that achieve ultra low read noise performance (less than 2 electrons rms) and near perfect charge transfer efficiency (0.9999996) without the addition of a fat-zero. This progress has now made it possible to achieve Fano-noise-limited performance in the soft X-ray where the detector's energy resolution is primarily limited by the statistical variation in the charge generated by the interacting X-ray photon. In this paper, Fano-noise-limited test data is presented for two different CCD types and a CCD derived estimate of the Fano factor is determined. By evaluating ultra low-modulation images (less than 1 electron peak-to-peak) it is shown that the CCD's global CTE is now superior to its read noise floor. To capitalize on this capability CCD manufacturers are now focusing their attention on reducing the noise floor below the 1 electron level thereby matching the sensor's CTE performance. This improvement, if accomplished, will push Fano-noise-limited performance for the CCD into the extreme ultra-violet.
The effects of 1.2 MeV gamma radiation and 20 MeV electrons on the operational characteristics of CCDs are studied. The effects of ionizing radiation on the charge transfer efficiency, dark current, and input/output circuitry are described. The improved radiation hardness of buried channel CCDs is compared to surface channel results. Both ion implanted and epitaxial layer buried channel device results are included. The advantages of using a single thickness SiO2 gate dielectric are described. The threshold voltage shifts and surface state density changes of dry, steam, and HCl doped oxides are discussed. Recent results on the recovery times and total dose effects of high dose rate pulses of 20 MeV electrons are reported.
Actual and projected performance of an intensified charge coupled device (ICCD) to be used as a photon counting imager will be presented. Effects of tube processing on such important CCD parameters as charge transfer efficiency and dark current are discussed.
The paper discusses the computational power of state-of-the-art charged-coupled device (CCD) transversal filters in communications applications. Some of the performance limitations of CCD transversal filters are discussed, with attention given to time delay and bandwidth, imperfect charge transfer efficiency, weighting coefficient error, noise, and linearity. The application of CCD transversal filters to matched filtering, spectral filtering, and Fourier analysis is examined. Techniques for making programmable transversal filters are briefly outlined.
A commercially available 1728 element shallow bulk channel CCD line array was clocked at output data rates up to 30 MHz. Temporal noise was near 200 electrons and was largely independent of clock rate. Charge transfer efficiency was in excess of 0.9999 at 30 MHz. Utilization is feasible for visual simulation and aerial mapping.
Large-area backside illuminated charge-coupled device imagers have been fabricated using double level aluminum transfer electrode technology. Devices with 100 x 160 and 400 x 400 resolution elements have been fabricated using buried channel technology for high charge transfer efficiency. Detailed optical characterization has been performed on these imagers over the temperature range -40 to +24 C and at several operating frequencies between 10 kHz and 1 MHz.
The design and fabrication of the 8585 InSb charge coupled infrared imaging device (CCIRID) chip are reported. The InSb material characteristics are described along with mask and process modifications. Test results for the 2- and 20-element CCIRID's are discussed, including gate oxide characteristics, charge transfer efficiency, optical mode of operation, and development of the surface potential diagram.
A computer program (ALGEVAL) has been developed to simulate the position estimating behavior of a centroid estimator algorithm using data typical of optical point spread function data recorded by an area array detector. Typical results are shown of varying detector properties and optical point spread function types. The detector parameters currently available for study include read noise mean value, dark current mean value and spatial variation, charge transfer efficiency and point spread function location, saturation level, signal level and pixel size. The program is capable of calculating any order centroid using an array size from 2 x 2 to 15 x 15 pixels. The output of the program is either a performance map, histogram data or tabluar data. A number of further developments are recommended.
An electrooptical characterization encompassing linearity, blooming, dark-count rate, charge-transfer efficiency (CTE), and quantum efficiency, is presented for a front/side-illuminated CCD with 512x512 format and 27x27-micron pixels. The detailed noise characteristics of the CCD-output FET are reported. While very good low light level CTE is obtained in the parallel-shift direction, CTE problems arise in the serial direction. The output FET noise is equivalent to 5-12 electrons, depending on FET operating conditions and system bandwidth.
Radiation damage is reported on CCDs (charge-coupled devices) that have been primarily exposed to 1.25-MeV gamma rays (Co-60 source). Two important classes of radiation damage are discussed, namely, bulk and ionization effects. Bulk damage or displacement damage is a process in which silicon atoms are displaced from their normal lattice positions by high-energy photons or particles. Single atomic displacements or cluster defect damage is produced, depending on the energy and type of radiation experienced by the detector. Bulk damage creates trapping sites within the CCD's signal channel which in turn degrades charge-transfer efficiency.
Three Tektronix 1024 x 1024 multi-pinned-phased (MPP) charge coupled devices were irradiated with protons to obtain data on CCD performance degradation in a proton radiation environment. The devices were irradiated with a spectrum of energies up to 120 MeV, simulating the total radiation dose of a long-term space experiment. Basic parameters such as charge transfer efficiency, dark current, noise, and full well were measured before and after irradiation. A test was also performed to determine the effectiveness of various thicknesses of tantalum shielding in protecting the CCD from damage. Dark current increase and CTE degradation were the most noticeable effects of proton radiation. This paper will present the objectives, test data, and conclusions of the proton testing, and will identify future testing to be performed.
A Tektronix CCD was subjected to a proton beam. Comparisons were made of the CCD characteristics before, during, and after radiation. Gain and readout noise were not affected and charge transfer efficiency, full well, and dark current were. Permanent CTE damage resulted immediately upon radiation, but full well damage developed two days after radiation, while the dark current showed signs of recovery before permanent damage occurred. Histogram analysis showed that the most spiky-type behavior resulted from damage to defects existing in the CCD before radiation.
The first InGaAs/InP charge-coupled device is demonstrated, exhibiting a charge transfer efficiency (CTE) of 0.98 at 13 MHz and 1 GHz. Cooling the device improves the CTE to greater than 0.99 at 13-MHz clock frequency. The 0.76-eV In(0.53)Ga(0.47)As bandgap makes this structure applicable to direct-detection short-wavelength infrared imagers.
Development of a 2048-squared CCD for a second-generation Space Telescope instrument has produced some very encouraging devices. The first experimental lot of 10 devices have very few defects, dark currents of less than 40 electrons/pixel/hour at -80 C, readout noise levels of less than 4 electrons rms and excellent charge transfer efficiency at signal levels of less than 10 electrons.
The development of the 2048 by 2048 CCD (Charge Coupled Device) for a second generation space telescope instrument has resulted in devices with very few defects, dark currents of less than 12 electrons/pixel/hour at -80 deg, readout noise levels of less than 4 electrons rms, and excellent charge transfer efficiency at signal levels of less than 10 electrons. A second generation of devices that capitalize on these characteristics have been produced and are currently in test. Faster frame transfer devices that preserve these characteristics have been designed that include tridirectional taps in the serial register. The state of the art in CCD's as photon counting detectors is reviewed.