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Amplifier translates the square pulses generated by a boron-trifluoride neutron sensitive detector located adjacent to a nuclear reactor to slower, long exponential decay pulses. These pulses are transmitted over long coaxial cables with minimum distortion and loss of frequency.
Field effect transistors as direct current amplifiers
Direct current voltage amplifier utilizing principles of servo system for gain stability
Here, we demonstrate the use of custom high electron mobility transistors (HEMTs) fabricated in GaAs/AlGaAs heterostructures to amplify current from quantum dot devices. The amplifier circuit is located adjacent to the quantum dot device, at sub-Kelvin temperatures, in order to reduce the impact of cable capacitance and environmental noise. Using this circuit, we show a current gain of 380 for 0.56 μW of power dissipation, with a bandwidth of 2.7 MHz and current noise referred to the input of 24 fA/Hz 1/2 for frequencies of 0.1–1 MHz. The power consumption required for similar gain is reduced by more than a factor of 20 compared to a previous demonstration using a commercial off-the-shelf HEMT. Lastly, we also demonstrate integration of a HEMT amplifier circuit on-chip with a quantum dot device, which has the potential to reduce parasitics and should allow for more complex circuits with reduced footprints.
Design and fabrication of prototype precision direct current amplifier
We use a science-grade skipper charge-coupled device (skipper CCD) operating in a low-radiation background environment to develop a semi-empirical model that characterizes the origin of single-electron events in CCDs. We identify, separate, and quantify three independent contributions to the single-electron events, which were previously bundled together and classified as "dark counts": dark current, amplifier light, and spurious charge. We measure a dark current, which depends on exposure, of (5.89±0.77)×10 -4 e - /pix/day, and an unprecedentedly low spurious charge contribution of (1.52±0.07)×10 -4 e - /pix, which is exposure independent. In addition, we provide a technique to study events produced by light emitted from the amplifier, which allows the detector's operation to be optimized to minimize this effect to a level below the dark-current contribution. Our accurate characterization of the single-electron events allows one to greatly extend the sensitivity of experiments searching for dark matter or coherent neutrino scattering. Moreover, an accurate understanding of the origin of single-electron events is critical to further progress in ongoing research and development efforts of skipper and conventional CCDs.
We use a science-grade Skipper Charge Coupled Device (Skipper-CCD) operating in a low-radiation background environment to develop a semi-empirical model that characterizes the origin of single-electron events in CCDs. We identify, separate, and quantify three independent contributions to the single-electron events, which were previously bundled together and classified as ``dark counts'': dark current, amplifier light, and spurious charge. We measure a dark current, which depends on exposure, of (5.89+-0.77)x10^-4 e-/pix/day, and an unprecedentedly low spurious charge contribution of (1.52+-0.07)x10^-4 e-/pix, which is exposure-independent. In addition, we provide a technique to study events produced by light emitted from the amplifier, which allows the detector's operation to be optimized to minimize this effect to a level below the dark-current contribution. Our accurate characterization of the single-electron events allows one to greatly extend the sensitivity of experiments searching for dark matter or coherent neutrino scattering. Moreover, an accurate understanding of the origin of single-electron events is critical to further progress in ongoing R&D efforts of Skipper and conventional CCDs.
Innovative Information Systems (IIS), Inc. is in the process of designing and fabricating a high bandwidth force and moment measuring device (i.e. the Magnetic Thruster Test Stand). This device will use active magnetic suspension to allow direct measurements of the forces and torques generated by the rocket engines of the missile under test. The principle of operation of the Magnetic Thruster Test Stand (MTTS) is based on the ability to perform very precise, high bandwidth force and position measurements on an object suspended in a magnetic field. This ability exists due to the fact that the digital servo control mechanism that performs the magnetic suspension uses high bandwidth (10 kHz) position data (via an eddy-current proximity sensor) to determine the amount of force required to maintain stable suspension at a particular point. This force is converted into required electromagnet coil current, which is then output to a current amplifier driving the coils. A discussion of how the coil current and magnetic gap distance (the distance between the electromagnet and the object being suspended) is used to determine the forces being applied from the suspended assembly is presented.
Wide electrical tuning and high continuous output power is demonstrated from a single mode quantum cascade laser emitting at a wavelength near 4.8 μm. This is achieved in a space efficient manner by integrating an asymmetric sampled grating distributed feedback tunable laser with an optical amplifier. An initial demonstration of high peak power operation in pulsed mode is demonstrated first, with >5 W output over a 270 nm (113 cm{sup −1}) spectral range. Refinement of the geometry leads to continuous operation with a single mode spectral coverage of 300 nm (120 cm{sup −1}) and a maximum continuous power of 1.25 W. The output beam is shown to be nearly diffraction-limited, even at high amplifier current.
We have implemented a new experimental set-up for precise measurements of current fluctuations in three-terminal devices. The system operates at very low temperatures (30 mK) and is equipped with three superconducting quantum interference devices (SQUIDs) as low noise current amplifiers. A SQUID input coil is connected to each terminal of a sample allowing the acquisition of time-dependent current everywhere in the circuit. From these traces, we can measure the current mean value, the noise, and cross-correlations between different branches of a device. In this paper, we present calibration results of noise and cross-correlations obtained using low impedance macroscopic resistors. From these results, we can extract the noise level of the set-up and show that there are no intrinsic correlations due to the measurement scheme. We also studied noise and correlations as a function of a dc current and estimated the electronic temperature of various macroscopic resistors.
A radically different ion accelerator system design has been developed to increase the extracted beam current density of ion thrusters. By independently controlling plasma ion extraction and acceleration, the Decoupled Extraction and Amplified Current (DE-AC) accelerator system gives higher beam currents at lower electric field stress levels. Results are presented for DE-AC grid system operation with the Test Bed Ion Engine. Using argon propellant, feasibility of a 60 mA/sq cm beam current density is shown. A discussion of power supply requirements, specific impulse operation and grid system geometrical design is presented also.
Tnis paper will focus on developing an exotic switching technique that enhances the DC-to-RF conversion efficiency of microwave power amplifiers. For years, switching techniques implemented in the 10 kHz to 30 MHz region have resulted in DC-to-RF conversion efficiencies of 90-95-percent. Currently amplifier conversion efficiency, in the 2-3 GHz region approaches, 10-20-percent. Using a combination of analytical modeling and hardware testing, a High Efficiency Microwave Power Amplifier was built that demonstrated conversion efficiencies four to five times higher than current state of the art.
This paper will focus on developing an exotic switching technique that enhances the DC-to-RF conversion efficiency of microwave power amplifiers. For years, switching techniques implemented in the 10 kHz to 30 MHz region have resulted in DC-to-RF conversion efficiencies of 90-95-percent. Currently amplifier conversion efficiency, in the 2-3 GHz region approaches, 10-20-percent. Using a combination of analytical modeling and hardware testing, a High Efficiency Microwave Power Amplifier was built that demonstrated conversion efficiencies four to five times higher than current state of the art.
This paper will focus on developing an exotic switching technique that enhances the DC-to-RF conversion efficiency of microwave power amplifiers. For years, switching techniques implemented in the 10 kHz to 30 MHz region have resulted in DC-to-RF conversion efficiencies of 90-95-percent. Currently amplifier conversion efficiency, in the 2-3 GHz region approaches, 10-20-percent. Using a combination of analytical modeling and hardware testing, a High Efficiency Microwave Power Amplifier was built that demonstrated conversion efficiencies four to five times higher than current state of the art.
Electronic circuitry contains new operational amplifier which incorporates monolithic super-gain transistors. Electrode does not provide voltage amplification; instead, it acts as current amplifier to make it possible to pick up electrical potentials from surface of highly resistant dry skin.
Future NASA, DOD, and commercial products will require electronic circuits that have greater functionality and versatility but occupy less space and cost less money to build and integrate than current products. System on a Chip (SOAC), a single semiconductor substrate containing circuits that perform many functions or containing an entire system, is widely recognized as the best technology for achieving low-cost, small-sized systems. Thus, a circuit technology is required that can gather, process, store, and transmit data or communications. Since silicon-integrated circuits are already used for data processing and storage and the infrastructure that supports silicon circuit fabrication is very large, it is sensible to develop communication circuits on silicon so that all the system functions can be integrated onto a single wafer. Until recently, silicon integrated circuits did not function well at the frequencies required for wireless or microwave communications, but with the introduction of small amounts of germanium into the silicon to make silicon-germanium (SiGe) transistors, silicon-based communication circuits are possible. Although microwavefrequency SiGe circuits have been demonstrated, there has been difficulty in obtaining the high power from their transistors that is required for the amplifiers of a transmitter, and many researchers have thought that this could not be done. The NASA Glenn Research Center and collaborators at the University of Michigan have developed SiGe transistors and amplifiers with state-of-the-art output power at microwave frequencies from 8 to 20 GHz. These transistors are fabricated using standard silicon processing and may be integrated with CMOS integrated circuits on a single chip. A scanning electron microscope image of a typical SiGe heterojunction bipolar transistor is shown in the preceding photomicrograph. This transistor achieved a record output power of 550 mW and an associated power-added efficiency of 33 percent at 8.4 GHz, as shown. Record performance was also demonstrated at 12.6 and 18 GHz. Developers have combined these state-of-the-art transistors with transmission lines and micromachined passive circuit components, such as inductors and capacitors, to build multistage amplifiers. Currently, a 1-W, 8.4-GHz power amplifier is being built for NASA deep space communication architectures.
Using cross correlation current noise spectroscopy, we have investigated carrier dynamics in methylammonium lead triiodide solar cells. This method provides space selectivity for devices with a planar multi-layered structure, effectively amplifying current noise contributions coming from the most resistive element of the stack. In the studied solar cells, we observe near full-scale shot noise, indicating the dominance of noise generation by a single source, likely the interface between the perovskite and the spiro-organic 2,2',7,7'-tetrakis(N,N-di-p-methoxyphenyl-amine)9,9'-spirobifluorene hole-transport layer. In this paper, we argue that the strong 1/f noise term has contributions from both the perovskite layer and interfaces. It displays a non-ideal dependence on photocurrent, S $\propto$ I 1.4 (instead of usual S $\propto$ I 2 ), which is likely due to current-induced halide migration. Finally, we observe generation–recombination noise. We argue that this contribution is due to bimolecular recombination in the perovskite bulk absorption layer. Extrapolating our results, we estimate that at standard 1 sun illumination, the electron–hole recombination time is 5 microseconds.
We show that the paraxial field equation for a free electron laser (FEL) in an infinitely wide electron beam with {kappa}-2 energy distribution can be reduced to a fourth ordinary differential equation (ODE). Its solution for arbitrary initial phase space density modulation has been derived in the wave-vector domain. For initial current modulation with Gaussian profile, close form solutions are obtained in space-time domain. In developing an analytical model for a FEL-based coherent electron cooling system, an infinite electron beam has been assumed for the modulation and correction processes. While the assumption has its limitation, it allows for an analytical close form solution to be obtained, which is essential for investigating the underlying scaling law, benchmarking the simulation codes and understanding the fundamental physics. 1D theory was previously applied to model a CeC FEL amplifier. However, the theory ignores diffraction effects and does not provide the transverse profile of the amplified electron density modulation. On the other hand, 3D theories developed for a finite electron beam usually have solutions expanded over infinite number of modes determined by the specific transverse boundary conditions. Unless the mode with the largest growth rate substantially dominates other modes, both evaluation and extracting scaling laws can be complicated. Furthermore, it is also preferable to have an analytical FEL model with assumptions consistent with the other two sections of a CeC system. Recently, we developed the FEL theory in an infinitely wide electron beam with {kappa}-1 (Lorentzian) energy distribution. Close form solutions have been obtained for the amplified current modulation initiated by an external electric field with various spatial-profiles. In this work, we extend the theory into {kappa}-2 energy distribution and study the evolution of current density induced by an initial density modulation.