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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

Power-efficient production of photon pairs in a tapered chalcogenide microwire

Using tapered fibers of As{sub 2}Se{sub 3} chalcogenide glass, we produce photon pairs at telecommunication wavelengths with low pump powers. We found maximum coincidences-to-accidentals ratios of 2.13 ± 0.07 for degenerate pumping with 3.2 μW average power, and 1.33 ± 0.03 for non-degenerate pumping with 1.0 μW and 1.5 μW average power of the two pumps. Our results show that the ultrahigh nonlinearity in these microwires could allow single-photon pumping to produce photon pairs, enabling the production of large entangled states, heralding of single photons after lossy transmission, and photonic quantum information processing with nonlinear optics.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Inverse spin Hall effect in Pt/(Ga,Mn)As

We investigate dc voltages under ferromagnetic resonance in a Pt/(Ga,Mn)As bilayer structure. A part of the observed dc voltage is shown to originate from the inverse spin Hall effect. The sign of the inverse spin Hall voltage is the same as that in Py/Pt bilayer structure, even though the stacking order of ferromagnetic and nonmagnetic layers is opposite to each other. The spin mixing conductance at the Pt/(Ga,Mn)As interface is determined to be of the order of 10{sup 19 }m{sup −2}, which is about ten times greater than that of (Ga,Mn)As/p-GaAs.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Thermal stability and photoconductive properties of photosensors with an alternating multilayer structure of amorphous Se and As{sub x}Se{sub 1−x}

In this study, we fabricated a-Se based photosensors with an alternating multilayer structure of a-Se and As{sub x}Se{sub 1−x} by rotational thermal evaporation deposition. During the deposition of the amorphous As{sub x}Se{sub 1−x} layers, As diffuses into the underlying a-Se component layers, thereby improving the thermal stability of the multilayer photosensor and thus increasing the breakdown electric field. Although the As doping introduces carrier traps in the a-Se layers, the multilayer photosensors demonstrate an effective quantum efficiency comparable to the single-layered a-Se sensor under the blue light illumination but are with a lower dark current density by two orders of magnitude. In addition to the top As{sub x}Se{sub 1−x} layer being functioning as an electron blocking layer, carrier traps present in the multilayer structure may decrease the drift mobility of charge carriers and disturb electric field distribution in the photosensors, thereby suppressing the dark current.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2011

Second-order Bragg gratings in single-mode chalcogenide fibres

Bragg gratings with a second-order resonance wavelength in the near-IR spectral region have been inscribed into single-mode chalcogenide (As{sub 2}S{sub 3}) glass fibre by a He - Ne laser beam using a configuration typical of Bragg grating fabrication in germanosilicate fibre, with the use of a phase mask that ensures effective diffraction of the writing light into the +1 and -1 orders. The spectra of the inscribed gratings show no resonances due to cladding mode excitation because the cladding material is photosensitive. (fibre optics)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2012

Generation of tunable mid-IR radiation by second harmonic in a CdGeAs{sub 2} crystal

Tunable mid-IR radiation is obtained during second harmonic generation of tunable CO{sub 2}-laser radiation using a CdGeAs{sub 2} crystal. Its angular tuning characteristics at the CO{sub 2}- laser wavelength, angular acceptance angle and spectral acceptance are measured. For second harmonic generation at 10.6 {mu}m, the conversion efficiency in the CdGeAs{sub 2} crystal is 90 times higher than that in the ZnGeP{sub 2} crystal.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2017

Calculation and experimental verification of a collimator with a Kerr lens for fibre laser mode locking

We present the calculation and experimental verification of the operation of a collimator coupling a light beam into an optical fibre with an As{sub 2}S{sub 3} nonlinear plate. It is shown that a Kerr lens formed in the plate with an increase in the peak pulse power leads to an increase in the output coupling ratio by about 15%, which can be used for the passive mode locking of a fibre laser. (lasers)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2019

Modification of the plasma-prepared As–Se–Te films and creation on their base the planar waveguides by continuous laser writing

As a result of the previous experiments (Mochalov et al. in Opt Quant Electron 49(8):274:1–274:11, 2017), it was found that the Te-based chalcogenide films prepared by plasma deposition have a transparency window in the range from 1.2 to 20 μm and cannot be modified in the two-photon absorption mode, and in the linear absorption mode only the thermal effects were observed leading to crystallization of the films or their destruction. In this work, PECVD-prepared As–Se–Te films were modified by continuous laser irradiation of different wavelengths—473, 632.8 and 808 nm. For the modification, samples with compositions As{sub 40}Se{sub 50}Te{sub 10} and As{sub 40}Se{sub 44}Te{sub 16} were deposited on a substrate of epi-polished crystalline sapphire. This paper presents the results of studying of the effect of continuous laser radiation on the optical and structural properties of the chalcogenide films samples. Also, planar waveguided structures based on the As–Se–Te films were formed and investigated.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2011

Quantum States Probed By Temperature Dependence Capacitance-Voltage Measurements For InP/GaAs Type-II Ultrathin Quantum Well

We report on the temperature dependent capacitance-voltage measurements on InP/GaAs ultrathin quantum well (QW). We observe a peak in apparent carrier distribution (ACD) profile at around the geometrical position of the QW. Peak value of the ACD profile increases, while it's width decreases with reducing temperature indicating that the peak in ACD is due to the accumulation of two dimensional electrons occupying the quantum states in ultrathin QW.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Chaotic behavior of light-assisted physical aging in arsenoselenide glasses

The theory of strange attractors is shown to be adequately applicable for analyzing the kinetics of light-assisted physical aging revealed in structural relaxation of Se-rich As-Se glasses below glass transition. Kinetics of enthalpy losses is used to determine the phase space reconstruction parameters. Observed chaotic behaviour (involving chaos and fractal consideration such as detrended fluctuation analysis, attractor identification using phase space representation, delay coordinates, mutual information, false nearest neighbours, etc.) reconstructed via the TISEAN program package is treated within a microstructure model describing multistage aging behaviour in arsenoselenide glasses. This simulation testifies that photoexposure acts as an initiating factor only at the beginning stage of physical aging, thus facilitating further atomic shrinkage of a glassy backbone.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Growth of antiphase-domain-free GaP on Si substrates by metalorganic chemical vapor deposition using an in situ AsH{sub 3} surface preparation

Antiphase-domain (APD) free GaP films were grown on Si(100) substrates prepared by annealing under dilute AsH{sub 3} in situ in an MOCVD reactor. LEED and AES surface analysis of Si(100) surfaces prepared by this treatment show that AsH{sub 3} etching quickly removes O and C contaminants at a relatively low temperature (690–740 °C), and creates a single-domain “A-type” As/Si surface reconstruction. The resulting GaP epilayers grown at the same temperature are APD-free, and could thereby serve as templates for direct growth of III-V semiconductors on Si. This single chamber process has a low thermal budget, and can enable heteroepitaxial integration of III-Vs and Si at an industrial scale.

36 MATERIALS SCIENCE↗
DOE OSTI2015

In situ investigations of laser and thermally modified As{sub 2}S{sub 3} nanolayers: Synchrotron radiation photoelectron spectroscopy and density functional theory calculations

As-deposited, annealed, and in situ As{sub 2}S{sub 3} nanolayers, illuminated by blue (405 nm) and red (650 nm) laser light, were studied using synchrotron radiation photoelectron spectroscopy and DFT electronic structure calculations. Changes in composition and local atomic coordination occurring in the irradiated region of As{sub 2}S{sub 3} films were monitored by analysis of As 3d and S 2p core levels. These studies show that both the thermal treatment and the red laser illumination of As{sub 2}S{sub 3} nanolayers decrease the concentration of homopolar (As-As and S-S) bonds. From the other hand, an increasing concentration of As-rich structural units (s.u.) with a homopolar As-As bond was observed under in situ blue laser illumination of As{sub 2}S{sub 3} nanolayers. Molecular orbital energies were calculated for different As- and S-centered s.u. and used for the interpretation of the core levels and valence band spectra. The surface local structure of the As{sub 2}S{sub 3} nanolayers and its photoinduced transformation are discussed in detail.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2010

Leaky-wave semiconductor laser with improved energetic characteristics and very narrow dirrectional pattern

A leaky-wave semiconductor laser diode has been developed based on the InGaAs/GaAs/InGaP heterostructure. This design made it possible to obtain a high radiation output in a narrow angular range (about 1{sup 0}-2{sup 0}) with an energy of 170 {mu}J in a laser with a cavity length of 0.8 mm and a stripe contact width of 360 {mu}m, pumped by a single current pulse with an amplitude of 88 A and width of 5 {mu}s. (lasers)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2013

Vacancy-type defects in In{sub x}Ga{sub 1−x}N grown on GaN templates probed using monoenergetic positron beams

Native defects in In{sub x}Ga{sub 1−x}N layers grown by metalorganic chemical vapor deposition were studied using monoenergetic positron beams. Measurements of Doppler broadening spectra of the annihilation radiation and lifetime spectra of positrons for a 200-nm-thick In{sub 0.13}Ga{sub 0.87}N layer showed that vacancy-type defects were introduced by InN alloying, and the major species of such defects was identified as complexes between a cation vacancy and nitrogen vacancies. The presence of the defects correlated with lattice relaxation of the In{sub 0.13}Ga{sub 0.87}N layer and the increase in photon emissions from donor-acceptor-pair recombination. The species of native defects in In{sub 0.06}Ga{sub 0.94}N layers was the same but its concentration was decreased by decreasing the InN composition. With the layer thickness increased from 120 nm to 360 nm, a defect-rich region was introduced in the subsurface region (<160 nm), which can be associated with layer growth with the relaxation of compressive stress.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Anomalous lasing of high-speed 850 nm InGaAlAs oxide-confined vertical-cavity surface-emitting lasers with a large negative gain-to-cavity wavelength detuning

The impact of a large negative quantum well gain-to-cavity etalon wavelength detuning on the static and dynamic characteristics of 850 nm InGaAlAs high-speed oxide-confined vertical-cavity surface-emitting lasers (VCSELs) was investigated. Three distinct lasing regimes were revealed in large square aperture (≥7 μm per side) devices with large detuning including: (1) an anomalous lasing via higher order Hermite–Gaussian modes at low forward bias current; (2) lasing via the lowest order Hermite–Gaussian modes at high bias current; and (3) simultaneous lasing via both types of transverse modes at intermediate bias currents. In contrast to conventional multimode VCSELs a two-resonance modulation response was observed for the case of co-lasing via multiple transverse modes with high spectral separation. The reduction in the oxide aperture area resulted in classical lasing via the lowest order modes with a conventional single-resonance frequency response.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2011

Chalcogenide glass microlenses by inkjet printing

We demonstrate micrometer scale mid-IR lenses for integrated optics, using solution-based inkjet printing techniques and subsequent processing. Arsenic sulfide spherical microlenses with diameters of 10-350 {mu}m and focal lengths of 10-700 {mu}m have been fabricated. The baking conditions can be used to tune the precise focal length.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

A model for arsenic anti-site incorporation in GaAs grown by hydride vapor phase epitaxy

GaAs growth by hydride vapor phase epitaxy (HVPE) has regained interest as a potential route to low cost, high efficiency thin film photovoltaics. In order to attain the highest efficiencies, deep level defect incorporation in these materials must be understood and controlled. The arsenic anti-site defect, As{sub Ga} or EL2, is the predominant deep level defect in HVPE-grown GaAs. In the present study, the relationships between HVPE growth conditions and incorporation of EL2 in GaAs epilayers were determined. Epitaxial n-GaAs layers were grown under a wide range of deposition temperatures (T{sub D}) and gallium chloride partial pressures (P{sub GaCl}), and the EL2 concentration, [EL2], was determined by deep level transient spectroscopy. [EL2] agreed with equilibrium thermodynamic predictions in layers grown under conditions in which the growth rate, R{sub G}, was controlled by conditions near thermodynamic equilibrium. [EL2] fell below equilibrium levels when R{sub G} was controlled by surface kinetic processes, with the disparity increasing as R{sub G} decreased. The surface chemical composition during growth was determined to have a strong influence on EL2 incorporation. Under thermodynamically limited growth conditions, e.g., high T{sub D} and/or low P{sub GaCl}, the surface vacancy concentration was high and the bulk crystal was close to equilibrium with the vapor phase. Under kinetically limited growth conditions, e.g., low T{sub D} and/or high P{sub GaCl}, the surface attained a high GaCl coverage, blocking As adsorption. This competitive adsorption process reduced the growth rate and also limited the amount of arsenic that incorporated as As{sub Ga}. A defect incorporation model which accounted for the surface concentration of arsenic as a function of the growth conditions, was developed. This model was used to identify optimal growth parameters for the growth of thin films for photovoltaics, conditions in which a high growth rate and low [EL2] could be attained.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2013

Urinary arsenic profiles and the risks of cancer mortality: A population-based 20-year follow-up study in arseniasis-endemic areas in Taiwan

Few studies investigated the association between chronic arsenic exposure and the mortality of cancers by estimating individual urinary arsenic methylation profiles. Therefore, we compared with the general population in Taiwan to calculate the standardized mortality ratio (SMR) in arseniasis-endemic area of Taiwan from 1996 to 2010 and evaluated the dose-response relationships between environmental arsenic exposure indices or urinary arsenic profiles and the mortality of cause-specific cancer. A cohort of 1563 residents was conducted and collected their urine sample and information regarding arsenic exposure from a questionnaire. All-cause death was identified using the National Death Registry of Taiwan. Urinary arsenic profiles were measured using high performance liquid chromatography–hydride generator–atomic absorption spectrometry. We used Cox proportional hazard models to evaluate the mortality risks. In results, 193 all-site cancer deaths, and 29, 71, 43 deaths respectively for liver, lung and bladder cancers were ascertained. The SMRs were significantly high in arseniasis-endemic areas for liver, lung, and bladder cancers. People with high urinary InAs% or low DMA% or low secondary methylation index (SMI) were the most likely to suffer bladder cancer after adjusting other risk factors. Even stopping exposure to arsenic from the artesian well water, the mortality rates of the residents were higher than general population. Finally, urinary InAs%, DMA% and SMI could be the potential biomarkers to predict the mortality risk of bladder cancer. -- Highlights: ► The SMRs were significantly high in arseniasis-endemic areas for liver, lung, and bladder cancers. ► People with high urinary InAs% were the most likely to suffer bladder cancer. ► People with low DMA% or low SMI were the most likely to suffer bladder cancer.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2011

Optical precursors with tunneling-induced transparency in asymmetric quantum wells

A scheme for separating optical precursors from a square-modulated laser pulse through an asymmetric double Al{sub x}Ga{sub 1-x}As/GaAs quantum-well structure via resonant tunneling is proposed. Destructive interference inhibits linear absorption, and a tunneling-induced transparency (TIT) window appears with normal dispersion, which delays the main pulse; then optical precursors are obtained. Due to resonant tunneling, constructive interference for nonlinear susceptibility is created. The enhanced dispersion in a narrow TIT window is about one order of magnitude larger than that of the linear case. In this case, the main pulse is much delayed and the precursor signals are easier to obtain. Moreover, the main pulse builds up due to the gain introduced by the enhanced cross-nonlinearity.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗