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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2011

Nuclear Data Sheets for A = 71

The evaluated spectroscopic data are presented for experimentally known nuclides of mass 71 (Mn,Fe,Co,Ni,Cu,Zn,Ga,Ge,As,Se,Br,Kr). Excited-state data are nonexistent for {sup 71}Mn, {sup 71}Fe, {sup 71}Co and {sup 71}Kr. Significant new data have been added since the last evaluation of A=71 nuclides by M. Bhat (1993Bh02). Excited states are now known in {sup 71}Ni and {sup 71}Cu, and enhanced information about high-spin excitations is available for {sup 71}Ga, {sup 71}As and {sup 71}Br. The decay schemes of radioactive isotopes {sup 71}Mn and {sup 71}Fe are not known at all, and those for {sup 71}Co, {sup 71m}Ni and {sup 71}Kr are not known well. For the decay of {sup 71}Cu, {sup 71g}Ni, and {sup 71}Br, extensive data are available, but in the opinion of the evaluators the decay schemes still seem incomplete. This work supersedes earlier full evaluations of A=71 published by 1988Bh01, 1979Ke06 and 1973Al33, and the last one published in 'update' mode by 1993Bh02.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2011

Transition strengths and the role of the f{sub 7/2} orbital in {sup 71}As

High-spin states in {sup 71}As were studied using the {sup 54}Fe({sup 23}Na,{alpha}2p) reaction at 80 MeV. Prompt {gamma}-{gamma} coincidences were measured using the Florida State University Compton-suppressed Ge array consisting of three clover detectors and seven single-crystal detectors. The existing high-spin level scheme has been verified, and 21 new transitions have been added based on an investigation of weak {gamma}-ray coincidence relations and relative {gamma}-ray intensities. Lifetimes of 16 excited states were measured using the Doppler-shift attenuation method applied to the experimental line shapes of decays in all of the known rotational bands. The B(E2) strengths inferred from the lifetimes indicate that moderate to high collective behavior persists to the highest observed spins in the lowest positive- and negative-parity bands, in qualitative agreement with projected shell-model calculations. The band suggested to be based on the {pi}f{sub 7/2} orbital shows a similar degree of collectivity within the same spin range, with B(E2) values in good agreement with those predicted by the projected shell model assuming a constant prolate deformation of {epsilon}{sub 2}=+0.27. The experimental Q{sub t} values in this band are somewhat smaller than predicted by cranked Woods-Saxon calculations.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2024

Measurement of the 70 Ge( d , n ) 71 As cross section from 2.1 MeV to 10 MeV

This work reports experimental 70 Ge(d,n) 71 As cross sections producing Arsenic-71 (t 1/2 = 65.3 h, 28% β + ), a potentially useful diagnostic radionuclide. Target stacks containing two nat Ge foils, a nat Ni monitor foil, and an Al degrader were irradiated with 5.5–10 MeV deuterons using an FN Tandem Van de Graaff accelerator. 71 As and 61 Cu, 56 Co, and 58 Co (from nat Ni(d,x)) were quantified in the foils by high purity germanium gamma spectrometry. Furthermore, the measured cross sections are larger than previously reported and suitable for producing preclinical quantities of diagnostic radiopharmaceuticals.

07 ISOTOPE AND RADIATION SOURCES↗
DOE OSTI2024

Theranostic Radiopnictogens: 71 As, 72 As, and 119 Sb (Final Technical Report)

This project has developed new methods for the cyclotron production of medically relevant radionuclides 71 As and 119 Sb. Arsenic and antimony are chemically homologous elements (group 5A, also known as the pnictogens) that have radionuclides that are of considerable interest within nuclear medicine. Such radiopnictogens include the potentially therapeutic radionuclides 119 Sb (t 1/2 = 38 h) that decays with the emission of 24.5 low energy, high potency electrons per decay with little concomitant photon radiation and 77 As (t 1/2 = 39 h) that decays with average beta energy of 230 keV and diagnostic nuclides 71 As (t 1/2 = 65 h, 28% β+) and 72 As (t 1/2 = 26 h, 80% β+) for positron emission tomography (PET). This work has had major success developing new methods for the cyclotron production and radiochemical isolation of 71 As, supporting parallel developments for 119 Sb, and assessing the chemical similarities between these two homologous radionuclides. This project brought into collaboration two universities with complimentary skill sets, proficiencies, expertise, and facilities: the University of Wisconsin (UWisc) and the University of Missouri (Mizzou). Professors Ellison and Engle have experience in the small cyclotron production and radiochemical isolation of radionuclides, including 72 As and 119 Sb. Their recently developed metallurgic methods for fabricating cyclotron targets have great potential to expand and allow for the biomedical cyclotron production of long- lived, lower positron energy 71 As. Professors Hennkens and Jurisson have significant experience in the reactor production, radiochemical isolation, and biological functionalization of radioarsenic. Recent development of trithiol-based chelator molecules for functionalizing radioarsenic provide a platform for the investigation of the fundamental challenges of the promising low-energy-electron emitter, 119 Sb. Through their positions within their respective University’s graduate schools, the PIs and Co-Is effectively trained of graduate students and postdoctoral researchers in nuclear and radiochemistry, sub-specialties specifically identified in the Department of Energy (DOE) Office of Science Isotope Program long-range plan. Annual laboratory research visits for students between UWisc and Mizzou provided essential broad-field experience and scientific networking that is critical for maintaining their path along the training pipeline to productive careers in isotope production. This research collaboration has provided significant benefits to the DOE University Isotope Network and radionuclide-using researchers around the country.

07 ISOTOPE AND RADIATION SOURCES↗
DOE OSTI2016

Characterization of reclaimed GaAs substrates and investigation of reuse for thin film InGaAlP LED epitaxial growth

This study reports a method to reuse GaAs substrates with a batch process for thin film light emitting diode (TF-LED) production. The method is based on an epitaxial lift-off technique. With the developed reclaim process, it is possible to get an epi-ready GaAs surface without additional time-consuming and expensive grinding/polishing processes. The reclaim and regrowth process was investigated with a one layer epitaxial test structure. The GaAs surface was characterized by an atomic force microscope directly after the reclaim process. The crystal structure of the regrown In{sub 0.5}(Ga{sub 0.45}Al{sub 0.55}){sub 0.5}P (Q{sub 55}) layer was investigated by high resolution x-ray diffraction and scanning transmission electron microscopy. In addition, a complete TF-LED grown on reclaimed GaAs substrates was electro-optically characterized on wafer level. The crystal structure of the epitaxial layers and the performance of the TF-LED grown on reclaimed substrates are not influenced by the developed reclaim process. This process would result in reducing costs for LEDs and reducing much arsenic waste for the benefit of a green semiconductor production.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Random telegraph signal and spin characteristics of the gate-all-around poly-silicon nanowire

An arsenic (As)-doped poly-silicon nanowire gate-all-around transistor fabricated using standard semiconductor methods was used to measure the Coulomb blockade effect by applying a tunable gate voltage. Two-level trapping states due to the random telegraph signal of fluctuating drain current were observed in the silicon transport channel. Under high magnetic fields, the superposition points of differential conductance revealed weak 2-electron singlet-triplet splitting states of the arsenic magnetic impurity. The weak spin-orbital coupling suggests that the electron-spin-polarization in the As-doped silicon nanowire and the two-level trapping state coexisted in the Coulomb blockade oscillations. These characteristics indicate that a few arsenic donors strongly affect the quantum behavior of the poly-silicon material.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Analysis of the transient response of nuclear spins in GaAs with/without nuclear magnetic resonance

As an alternative to studying the steady-state responses of nuclear spins in solid state systems, working within a transient-state framework can reveal interesting phenomena. The response of nuclear spins in GaAs to a changing magnetic field was analyzed based on the time evolution of nuclear spin temperature. Simulation results well reproduced our experimental results for the transient oblique Hanle signals observed in an all-electrical spin injection device. The analysis showed that the so called dynamic nuclear polarization can be treated as a cooling tool for the nuclear spins: It works as a provider to exchange spin angular momentum between polarized electron spins and nuclear spins through the hyperfine interaction, leading to an increase in the nuclear polarization. In addition, a time-delay of the nuclear spin temperature with a fast sweep of the external magnetic field produces a possible transient state for the nuclear spin polarization. On the other hand, the nuclear magnetic resonance acts as a heating tool for a nuclear spin system. This causes the nuclear spin temperature to jump to infinity: i.e., the average nuclear spins along with the nuclear field vanish at resonant fields of {sup 75}As, {sup 69}Ga and {sup 71}Ga, showing an interesting step-dip structure in the oblique Hanle signals. These analyses provide a quantitative understanding of nuclear spin dynamics in semiconductors for application in future computation processing.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Doping CdSexTe1-x/CdTe Graded Absorber Films with Arsenic for Thin-Film Photovoltaics

CdTe thin-film photovoltaics have demonstrated some of the lowest costs of electricity generation owing to its low material cost and ease of manufacturing. However, the full potential of polycrystalline CdTe photovoltaics can only be realized if the open-circuit voltage can be increased beyond 1 V Open-circuit voltage ~850-900 mV has been consistently observed for state-of-the-art polycrystalline CdTe solar cells. Open-circuit voltage of over 1V has been demonstrated for single crystal CdTe devices by doping with Group V elements. Therefore, this study is aimed at understanding behavior of polycrystalline CdTe devices with arsenic doping, its activation and process and performance optimization in order to overcome current voltage limitations in CdTe solar cells.

14 SOLAR ENERGY↗
DOE OSTI2011

Room temperature detection of NO{sub 2} using InSb nanowire

Room temperature detection of NO{sub 2} down to one part-per-million (ppm) using single crystalline n-type InSb nanowires (NWs) chemiresistive gas sensor is presented. These sensors were synthesized and fabricated by the combination of chemical vapor deposition and dielectrophoresis alignment techniques. The sensor devices showed an increase in resistance upon exposure to successive increments of NO{sub 2} concentration up to 10 ppm. The reduction in conductance of n-type InSb NWs when exposed to NO{sub 2} is made possible due to the charge transfer from the InSb NW surface to the adsorbed electron acceptor NO{sub 2} molecules. The demonstrated results suggest InSb NW as a promising candidate in sensing applications as well as being environmental friendly over existing arsenic and/or phosphorous-based III-V NW sensors.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Technique for magnetic susceptibility determination in the highly doped semiconductors by electron spin resonance

A method for determining the magnetic susceptibility in the highly doped semiconductors is considered. It is suitable for the semiconductors near the metal - insulator transition when the conductivity changes very quickly with the temperature and the resonance line form distorts. A procedure that is based on double integration of the positive part of the derivative of the absorption line having a Dyson shape and takes into account the depth of the skin layer is described. Analysis is made for the example of arsenic-doped germanium samples at a rather high concentration corresponding to the insulator-metal phase transition.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Modelling of illuminated current–voltage characteristics to evaluate leakage currents in long wavelength infrared mercury cadmium telluride photovoltaic detectors

The current–voltage characteristics of long wavelength mercury cadmium telluride infrared detectors have been studied using a recently suggested method for modelling of illuminated photovoltaic detectors. Diodes fabricated on in-house grown arsenic and vacancy doped epitaxial layers were evaluated for their leakage currents. The thermal diffusion, generation–recombination (g-r), and ohmic currents were found as principal components of diode current besides a component of photocurrent due to illumination. In addition, both types of diodes exhibited an excess current component whose growth with the applied bias voltage did not match the expected growth of trap-assisted-tunnelling current. Instead, it was found to be the best described by an exponential function of the type, I{sub excess} = I{sub r0} + K{sub 1} exp (K{sub 2} V), where I{sub r0}, K{sub 1}, and K{sub 2} are fitting parameters and V is the applied bias voltage. A study of the temperature dependence of the diode current components and the excess current provided the useful clues about the source of origin of excess current. It was found that the excess current in diodes fabricated on arsenic doped epitaxial layers has its origin in the source of ohmic shunt currents. Whereas, the source of excess current in diodes fabricated on vacancy doped epitaxial layers appeared to be the avalanche multiplication of photocurrent. The difference in the behaviour of two types of diodes has been attributed to the difference in the quality of epitaxial layers.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Two-photon absorption in arsenic sulfide glasses

The two-photon absorption coefficient of 1047-nm light in As{sub 35}S{sub 65} chalcogenide glass has been measured. CW probe radiation has been used to observe the linear absorption in glass induced by two-photon excitation. The induced absorption lifetime was found to be ∼2 ms. (paper)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Identification of donor deactivation centers in heavily As-doped Si using time-of-flight medium-energy ion scattering spectroscopy

Electrically-inactive arsenic (As) complexes in silicon are investigated using time-of-flight medium-energy ion scattering spectroscopy. In heavily As-doped Si, the As atoms that are segregated in the Si interface region just below the SiO{sub 2} are found to be in interstitial forms (As{sub i}), while the As atoms in the bulk Si region are found to be in the substitutional form (As{sub Si}). Despite the substitutional form of As, most of the As are found to be electrically inactive in the bulk region, and we identify the As to be in the form of a 〈111〉-oriented As{sub Si}-Si-vacancy (As{sub Si}-V{sub Si}) complex. The As{sub i} atoms in the interface Si region are found to exist together with Si-interstitial atoms (Si{sub i}), suggesting that the As{sub i} atoms in the interface Si region accompany the Si{sub i} atoms.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Ab initio study of semiconductor atoms impurities in zigzag edge (10,0) carbon nanotubes

The substitutional impurities in zigzag edge (10,0) carbon nanotubes have been studied by using first principles calculations. Silicon (Si), gallium (Ga), and arsenic (As) atom have been chosen as semiconductor based-atom for replacing carbon atoms in CNT’s surface. The silicon atom changes the energy gap of pristine zigzag (10,0) CNT, it is 0.19 eV more narrow than that of pristine CNT. Geometrically, the silicon atom creates sp{sup 3} bond with three adjacent carbon atoms, where the tetrahedral form of its sp{sup 3} bond is consisted of free unoccupied state. The silicon atom does not induce magnetism to zigzag CNT. Due to gallium (Ga) and arsenic (As) atom substitution, the zigzag CNT becomes metallic and has magnetic moment of 1 µ{sub B}. The valance and conduction band are crossed each other, then the energy gap is vanished. The electronic properties of GaAs-doped CNT are dominantly affected by gallium atom and its magnetic properties are dominantly affected by arsenic atom. These results prove that the CNT with desired properties can be obtained with substitutional impurities without any giving structural defect.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2019

Flattened and broadband mid-infrared super-continuum generation in As{sub 2}Se{sub 3} based holey fiber

By using an As{sub 2}Se{sub 3} based holey fiber (HF) with a normal flat dispersion profiles, a flattened and broadband mid-infrared super-continuum generation is analysed. The transmission of an ultra-short pulse in the HF is numerically simulated by solving the generalized nonlinear Schrödinger equation under various parameters. The simulation results show that, by launching a pulse with a width of 50 fs and a peak power of 4.25 kW at 4375 nm into the 6 mm-long HF, a flat and broadband super-continuum at 3 dB level is successfully generated. The super-continuum covers the wavelengths from 3866 to 5958 nm which is the largest flat bandwidth reported in such a short fiber.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

New Millisecond Isomer Lifetime Measurements at LANSCE

New half-life measurements have been made of the millisecond isomers {sup 71m}Ge, {sup 114m2}I, {sup 208m}Bi, {sup 88m1}Y, {sup 88m2}Y, and {sup 75m}As populated in neutron-induced reactions. These measurements were made using the unique time structure of the LANSCE/WNR neutron source, by observing the γ-ray decays of the isomers during the time between the LANSCE proton macropulses. Two different LANSCE proton beam time structures were used. The GEANIE array of HPGe detectors was used to detect the γ-ray decays.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2011

THz electrical instability of a hybrid system composed of quantum dot and quantum well with drifting electrons

We studied the hybrid system composed of a polarizable nanoparticle and a quantum well. For coupled oscillations of dipole excitations of the nanoparticle and two-dimensional electron gas, we determined frequencies and damping of the Landau-type. We found that under the drift of two-dimensional electrons, electrostatic coupling between the nanoparticle and the quantum well gives rise to a novel type of electrical instability in the terahertz frequency range. Under this electrical instability, amplitudes of the dipole and plasma oscillations increase in time due to the energy transfer from the drifting electrons. The instability arises when the electron drift velocity exceeds a critical value. Long relaxation times of the dipole excitations of the nanoparticle are favorable for development of the instability. We presented estimates, which demonstrate that the instability can be realized in quantum dot-quantum well hybrid systems fabricated by contemporary semiconductor technologies. This instability can provide a new mechanism for generation of THz radiation.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Laser beam induced nanoscale spot through nonlinear “thick” samples: A multi-layer thin lens self-focusing model

Self-focusing is a well-researched phenomenon. Nanoscale spots can be achieved through self-focusing, which is an alternative method for achieving high-density data storage, high-resolution light imaging, and maskless nanolithography. Several research groups have observed that self-focusing spots can be reduced to nanoscale levels via incident laser power manipulation. Self-focusing spots can be analyzed by solving the nonlinear Schrödinger equation and the finite difference time domain method. However, both procedures are complex and time-consuming. In the present work, a multi-layer thin-lens self-focusing model that considers diffraction effects and changes of refractive index along the radial and film thickness directions is proposed to analyze the self-focusing behavior and traveling process of light beams intuitively. The self-focusing behaviors of As{sub 2}S{sub 3} are simulated, and results show that a nanoscale self-focusing spot with a radius of about 0.12 μm can be formed at the bottom of nonlinear sample when the incident laser power exceeds 4.25 mW. Our findings are basically consistent with experimental reports and provide a good method for analyzing and understanding the self-focusing process. An appropriate application schematic design is also provided.

36 MATERIALS SCIENCE↗