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At least 343 records · Page 19

The photoionization cross section of magnesium near threshold.

Description of a method for calculating the photoionization cross section of magnesium, using the technique of configuration reaction in the continuum. The two series of levels which give rise to autoionization near the threshold are explicitly included in the calculation. The described method is a logical extension of the basic technique developed by Atlick and Moore (1966) for similar calculations in application to helium.

Bates, G. N.↗

The energy distribution cross section in threshold electron-atom impact ionization

The flatness of the energy differential cross section in impact ionization is derived analytically in the Wannier theory. However it is shown that the Wannier zone is confined to a region of the order E/5 is less than or equal to epsilon is less than or equal to 4E/5, where E is the available energy and epsilon is the energy of the electrons. By contrasting the known results of photoionization and photodetachment, one can cogently argue that in the complementary region where electrons share their energy very unequally the cross section rises to a value independent of E, and that this region determines the form of the threshold law.

Temkin, A.↗

Maximum likelihood classification by thresholding

The standard maximum-likelihood classifier is reformulated so that, in most cases, only a small number of density functions need be computed each time a data point is to be classified. The technique relies upon class thresholds which are obtained at the beginning of the classification process and which remain fixed thereafter. The result of the reformulation is that a significant reduction in classification processing time is obtained while retaining complete consistency with the standard maximum-likelihood classifier.

Minter, T. C.↗

Gas threshold Cerenkov counters

The report describes two designs are reported of gas threshold Cerenkov counters for recording electrons of primary cosmic rays without recording protons. Also presented are design and technological measures which ensure maximum light collection of the Cerenkov radiation originating on the photocathode of the photomultiplier inside the radiator. The dependence of the reflection factor on the length of the light wave for different coatings is shown as well as for the throughput of the different optical materials employed. A range of methods for determining the efficiency of the counters during the recording of cosmic ray nucons and ways of increasing it further are given.

Logachev, V. I.↗

Near-threshold photoionization of xenon metastable atoms

Photoionization from metastable levels of atomic xenon has been studied in the wavelength range from the threshold at 4622 A to 2700 A. Structure in the photoionization signal, due to autoionization, is analyzed to provide term values, lifetimes, and line-shape parameters of the autoionizing states. These parameters, together with the estimated absolute cross sections, are used to derive discrete and continuum oscillator strengths.

Rundel, R. D.↗

Low-threshold light-emitting-diode laser

Technique, which consists of reducing bandgap change at heterojunction to 0.1 eV and avoiding deep-level impurities such as Si and Ge, produces low-threshold laser diodes which are made from (AlGa)As and emit in visible spectrum.

Hawrylo, F. Z.↗

High and low threshold P-channel metal oxide semiconductor process and description of microelectronics facility

The fabrication techniques and detail procedures for creating P-channel Metal-Oxide-Semiconductor (P-MOS) integrated circuits at George C. Marshall Space Flight Center (MSFC) are described. Examples of P-MOS integrated circuits fabricated at MSFC together with functional descriptions of each are given. Typical electrical characteristics of high and low threshold P-MOS discrete devices under given conditions are provided. A general description of MSFC design, mask making, packaging, and testing procedures is included. The capabilities described in this report are being utilized in: (1) research and development of new technology, (2) education of individuals in the various disciplines and technologies of the field of microelectronics, and (3) fabrication of many types of specially designed integrated circuits which are not commercially feasible in small quantities for in-house research and development programs.

Bouldin, D. L.↗

Effects of plasma microfields on radiative transitions from atomic levels above the ionization threshold

The effects of plasma electric microfields on line-like optical features arising from atomic levels above the ionization threshold are investigated within the framework of the quasi-static and single-frequency dynamic-field theories of spectral-line broadening. The 2p(23)P to 1s2p(3)P and 2s2p(3)P to 1s2s(3)S transitions in helium and helium-like ions are treated as examples. The mixing of the doubly excited levels in the perturbing microfields produces Stark broadening of the emission lines and induces autoionization of the 2p(23)P level, which, unlike the 2s2p(3)P level, is metastable against autoionization in the field-free environment. Determination of the complete Stark-broadening profiles in thermal plasmas is complicated by the need to include the effects of both the (quasi-static) ion and the (dynamic) electron fields. Under nonequilibrium conditions, where electric fields from either electron or ion plasma waves can far exceed nearby particle fields, the calculation and interpretation of the line shapes may be simplified and could provide a diagnostic probe of the wave-field properties.

Davis, J.↗

Performance analysis of digital FM demodulators for fading channels in the threshold region

The quasi-optimum digital FM demodulators for fading channels reported earlier (1975) reflected the system performance accurately under high signal to noise ratio conditions. In this paper, the prediction of the system performance for low SNR values is considered. A new set of error variance algorithms is developed from the filter algorithm assuming a Gaussian distribution for the state estimation errors and taking the effect of high frequency terms into consideration. Simulation analysis for an FM system with Rician fading channel shows that these algorithms predict the system performance accurately in the threshold region.

Dharamsi, M. T.↗

Nocturnal lowering of thresholds for sweating and vasodilation

The effect of the time of day on the relation of the heat-dissipating responses (sweating and vasodilation) to esophageal and mean skin temperatures was investigated. These parameters were measured in six subjects exercised at 60-70% of maximal aerobic power in a 25 deg C ambient. Results indicate that a circadian rhythm in the thresholds for sweating and vasodilation can account for much of the rhythm of internal body temperature. The circadian rhythm in the operation of the thermoregulatory system seems to be expressed through a reference point shared by vasomotor and sudomotor controls.

Wenger, C. B.↗

Low threshold CW Nc laser oscillator at 1060 nm study

A broad range of characteristics of neodymium/yag lasers were investigated. With Nd:YVO4 crystals, CW 1.06 mu lasers were operated with thresholds a factor of 2 lower than Nd:YAG and with greater slope efficiencies. Thus, the first step in the development of new oscillators suitable for application in high data rate laser communication systems which surpass the present performance of the Nd:YAG laser has been successfully demonstrated.

Birnbaum, M.↗

Variable threshold zonal filtering

Variable threshold zonal filtering is an active nonlinear image enhancement technique designed to avoid ringing artifacts which filtering can introduce near sharp brightness transitions in the original scene. The filtering procedure can be implemented in the Fourier domain or by subtractive box filtering. It is shown, in reference to a Landsat scene of Iceland, that while conventional box filtering produces severe ringing, zonal filtering results in a more uniform display of local detail.

Schwartz, A. A.↗

The effect of landing system coverage and path geometry on lateral position errors at the runway threshold

The results of an analytical study performed to determine the effect of the azimuth coverage of a Microwave Landing System (MLS) on the ability of an airplane, with an initial navigation position estimate error, to navigate to the runway threshold are presented. The test path chosen for this study consists of an initial straight segment leading into a 130 deg turn with a 2286 m radius and ending in a straight-in final approach segment. The test path configuration was varied by changing the MLS azimuth coverage angle and the final approach length. The aircraft was positioned with an inital offset to the left or right of the desired path along the line of intersection with the MLS azimuth coverage. A fast time computer simulation program, using a simplistic point mass model of the airplane, was used for this study. The data from this study indicates that the lateral position errors at the runway are primarily a function of the final approach length. The effect of the azimuth coverage on the lateral position errors was restricted by the turn characteristics of the horizontal steering control laws.

Vicroy, D. D.↗

Calculation of Pareto-optimal solutions to multiple-objective problems using threshold-of-acceptability constraints

A technique is presented for the calculation of Pareto-optimal solutions to a multiple-objective constrained optimization problem by solving a series of single-objective problems. Threshold-of-acceptability constraints are placed on the objective functions at each stage to both limit the area of search and to mathematically guarantee convergence to a Pareto optimum.

Giesy, D. P.↗

Radiation hardened PMOS process with ion implanted threshold adjust

By including specific process modifications the effect of ion implantation on radiation hardness can be minimized and radiation hard ion implanted MOS circuits can be fabricated. The experimental procedure followed was to examine key processing steps (with respect to radiation hardness) on ion-implanted individual PMOS transistors. The individual transistors were evaluated by continuously monitoring the threshold voltage as the transistors were being irradiated. By comparing runs it was possible to deduce what is considered a radiation hard ion implanted process. Tests with a complex LSI PMOS IC processor chip containing over 2000 transistors and resistors were also conducted

Jhabvala, M.↗

Threshold windspeeds for sand on Mars - Wind tunnel simulations

Wind friction threshold speeds for particle movement were determined in a wind tunnel operating at martian surface pressure with a 95 percent CO2 and 5 percent air atmosphere. The relationship between friction speed and free-stream velocity is extended to the critical case for Mars of momentum thickness Reynolds numbers between 425 and 2000. It is determined that the dynamic pressure required to initiate saltation is nearly constant for pressures between 1 bar and 4 mb for atmospheres of both air and CO2.

Greeley, R.↗

Self-calibrating threshold detector

A self calibrating threshold detector comprises a single demodulating channel which includes a mixer having one input receiving the incoming signal and another input receiving a local replica code. During a short time interval, an incorrect local code is applied to the mixer to incorrectly demodulate the incoming signal and to provide a reference level that calibrates the noise propagating through the channel. A sample and hold circuit is coupled to the channel for storing a sample of the reference level. During a relatively long time interval, the correct replica code provides an output level which ranges between the reference level and a maximum level that represents incoming signal presence and synchronism with the replica code. A summer substracts the stored sample reference from the output level to provide a resultant difference signal indicative of the acquisition of the expected signal.

Barnes, J. R.↗