Photovoltaic properties of gaas thin films
Photovoltaic properties of vapor deposited polycrystalline gallium arsenide thin films
SEARCH · Engineering Papers
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
Photovoltaic properties of vapor deposited polycrystalline gallium arsenide thin films
Ductility development in polycrystalline single phase ceramics at elevated temperatures
Calibration of magnetic susceptibility measuring apparatus for polycrystalline samples of coronene
Zirconium oxide polycrystalline fibers for improving structural rigidity and thermal insulation of zirconium oxide foam
Estimation of hexagonal cadmium sulfide in mixtures with cubic form obtained by reflection electron diffraction of polycrystalline material
Dislocation generation in annealed polycrystalline iron-carbon alloys under high hydrostatic pressure
Thermal expansion of polycrystalline nickel oxide in oxygen atmosphere with 5 percent nitrogen to 1930 degrees C, noting grain size
Elevated temperatures effect on sputtering yields of polycrystalline and single crystal metals, considering defect annealing and focused collision sequence
Mixtures of hexagonal and cubic cadmium sulphide analyzed by electron diffraction of polycrystalline material
Photovoltaic barriers formed by depositing a layer of polycrystalline cuprous sulfide or cuprous selenide on gallium arsenide are chemically and electrically stable. The stability of these barrier materials is significantly greater than that of cuprous iodide.
Ionization studies dealing with ion source, emission contamination, and alkali desorption energies on polycrystalline refractory metals
Creep tests on polycrystalline copper with surface reoxidized or cleaned by argon bombardment at elevated temperatures and high vacuum
The tensile properties for 33 polycrystalline structural materials including aluminum, titanium, nickel and iron alloys were obtained at -256.5 C (30 deg R) after irradiation exposure at this temperature to 10(exp 17) nvt (E greater than 0.5 Mev), at -256.5 C without previous irradiation, and at approximately 27 C (540 deg R) without previous irradiation. The data were evaluated statistically to permit identification of cryogenic effects and nuclear-cryogenic effects. A number of conclusions were drawn regarding suitability of certain of the materials for use in nuclear-cryogenic applications and regarding the need for further investigation.
Composite metal matrix materials reinforced with polycrystalline ceramic and metal fibers
Ductility in polycrystalline single phase ceramics, noting behavior at room and high temperature of single crystal structure, dislocation, etc
Effect of grain boundaries and impurities on mechanical behavior of polycrystalline ceramics
Dielectric properties of polycrystalline barium titanate ceramic materials for microelectronic applications
Mechanisms of charge carrier mobility in thin polycrystalline film junctions