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At least 343 records · Page 19
All sourcesNASA NTRSDOE OSTI
NASA NTRS1973

Effects of visual reference on adaptation to motion sickness and subjective responses evoked by graded cross-coupled angular accelerations

Three groups of 10 subjects each were exposed to stepwise increments of cross coupled angular accelerations in three visual modes: internal visual reference (IVR), external visual reference (EVR), and vision absent (VA). The subjects in the IVR condition required significantly greater amounts of stimulus exposure to neutralize their illusory subjective reactions. They also suffered a greater loss of well-being and a more marked incidence of motion sickness than did subjects in the EVR and VA conditions. The same 30 subjects were reexposed to the same graded cross coupled stimulation 1 week later. This time, however, all the subjects were tested under only the IVR condition. All three groups showed some positive transfer of adaptation, but only the IVR-IVR combination required significantly fewer head motions to achieve the same level of adaptation on the second occasion. Taken overall, however, the most efficient and least disturbing route to adaptation at the completion of the second test was via the VA-IVR combination.

Reason, J. T.↗
NASA NTRS1974

An investigation of the plastic fracture of AISI 4340 and 18 nickel - 200 grade maraging steels

The mechanisms of plastic fracture (dimpled rupture) in high-purity and commercial 18 Ni, 200 grade maraging steels and quenched and tempered AISI 4340 steels have been studied. Plastic fracture takes place in the maraging alloys through void initiation by fracture of titanium carbo-nitride inclusions and the growth of these voids until impingement results in coalescence and final fracture. The fracture of AISI 4340 steel at a yield strength of 200 ksi occurs by nucleation and subsequent growth of voids formed by fracture of the interface between manganese sulfide inclusions and the matrix. The growth of these inclusion-nucleated voids is interrupted long before coalescence by impingement, by the formation of void sheets which connect neighboring sulfide-nucleated voids.

Cox, T. B.↗
NASA NTRS1975

Crack growth in ASME SA-105 grade 2 steel in hydrogen at ambient temperature

Cyclic-load crack growth measurements were performed on ASME SA-105 Grade 2 steel specimens exposed to 10,000- and 15,000-psi hydrogen and to 5000-psi helium, all at ambient temperatures. The cyclic-load crack growth rate was found to be faster in high-pressure hydrogen than in helium. Cyclic-load crack growth rates in this steel were not reduced by preloading in air to a stress intensity of 1.5 times the cyclic K sub max in hydrogen. There are indications that holding under load in hydrogen, and loading and unloading in helium retards hydrogen-accelerated cyclic-load crack growth. Cyclic frequency and R (ratio of K sub min/k sub max) were important variables determining crack growth rate. The crack growth rate increased as a logarithm of the cycle duration and decreased with increasing R.

Walter, R. J.↗
NASA NTRS1975

High-efficiency graded band-gap Al/x/Ga/1-x/As-GaAs solar cell

A detailed theoretical analysis of an n-on-p graded band-gap Al(x)Ga(1-x)As-GaAs solar cell yields a maximum air mass zero power conversion efficiency of 17% compared to 9% for a similar GaAs cell. The analysis includes surface and bulk minority carrier recombination, junction recombination current, spectrally varying surface reflection, and series resistance loss. The maximum efficiency is determined for a surface recombination velocity of 10,000 cm/sec and hole and electron diffusion lengths of 2.1 and 7.6 microns, respectively. The improved efficiency is primarily due to a built-in electric field, caused by the band-gap gradation, accelerating photogenerated holes toward the p-n junction. This field reduces the surface and bulk recombination of the holes, and thereby enhances their collection.

Hutchby, J. A.↗
NASA NTRS1975

Low cost processes for solar-grade silicon

Upgrading metallurgical grade silicon is being pursued in four associated areas in order to improve the purity of the normally 98% material. The first two work areas involve purification of raw materials entering the process in addition to upgrading the arc furnace itself. The second two areas of process upgrading comprise improving the purity of the silicon after it leaves the arc furnace by reactive gas blowing and unidirectional freezing. The best cell produced to date was fabricated from MG-Si that had been blown with an O2-Cl2 mixture, unidirectionally solidified, and 6-float-zone passed (to determine a base boron level of 0.04 ohm/cm). The cell showed a 10.7% AMO efficiency. In the other processes category, the use of silicates as a silicon source and of electrolysis as a process were studied. The best electrolytic process uses a 1000 C fused salt of silica in cryolite.

Hunt, L. P.↗
NASA NTRS1976

Theoretical analysis of Al/x/Ga/1-x/As-GaAs graded band-gap solar cell

A practical theoretical analysis of an n/p graded band-gap Al(x)Ga(1-x)As-GaAs solar cell indicates that the presence of a built-in electric field acting on holes in the surface layer increases the hole collection efficiency of a nearly optimum cell to a maximum of 97.8%. The electric field is created by the band-gap gradient and serves to reduce the surface hole recombination by 97% and reduce the bulk hole recombination by 80%, compared to a similar GaAs cell. These reduced losses increase cell response substantially for wavelengths less than 0.59 micron and yield a maximum air-mass-zero efficiency of 17.7% (not corrected for a 13% front-surface contact). The model includes an optimized antireflection coating, series resistance, and junction-recombination current.

Hutchby, J. A.↗
NASA NTRS1977

The effect of microstructure and strength on the fracture toughness of an 18 Ni, 300 grade maraging steel

Fractography and metallographic sectioning were used to investigate the influence of microstructure and strength on the fracture toughness (KIc) and fracture mechanism of an 18 Ni, 300 grade maraging steel. Increased yield strength from 1442 to 2070 MN/m squared through precipitation hardening results in a KIc loss from 143 to 55 MN/m superscript 3/2. Ti (C,N) Ti2S, and TiC inclusions in sizes from 1 to 8, 1 to 15, and 0.1 to 2 microns respectively serve as sites for void nucleation and lead to fracture by the dimpled rupture process in all strength levels considered. TiC nucleated dimples occupy more than half the fracture in all conditions. Void nucleation rate and resultant number of dimples per unit area of fracture increase with increasing yield strength. Average dimple size decreases with increasing strength and/or overaging which follows from the decreasing amount of stable void growth measured by sectioning tensile specimens. Void growth is assisted by crack branching along a path of TiC inclusions. Coalescence occurs in the highest strength materials by a combination of TiC void nucleation and premature separation at strengthening precipitates.

Psioda, J. A.↗
NASA NTRS1977

High velocity continuous-flow reactor for the production of solar grade silicon

The feasibility of a high volume, high velocity continuous reduction reactor as an economical means of producing solar grade silicon was tested. Bromosilanes and hydrogen were used as the feedstocks for the reactor along with preheated silicon particles which function both as nucleation and deposition sites. A complete reactor system was designed and fabricated. Initial preheating studies have shown the stability of tetrabromosilane to being heated as well as the ability to preheat hydrogen to the desired temperature range. Several test runs were made and some silicon was obtained from runs carried out at temperatures in excess of 1180 K.

Woerner, L.↗
NASA NTRS1976

Computer analysis of heterojunction and graded bandgap solar cells

The development and application of a graded bandgap solar cell computer analysis program is discussed. The basic device equations as used in the computer analysis are discussed and the techniques used to model material parameter variations are described. Finally, the results of the computer analysis of several Al(x)Ga(1-x)As and GaAs(1-x)P(x) solar cell structures are presented along with a discussion of the effects of interface states and various composition profiles on maximum solar cell efficiency.

Sutherland, J. E.↗
NASA NTRS1979

Silicon halide-alkali metal flames as a source of solar grade silicon

The feasibility of using alkali metal-silicon halide diffusion flames to produce solar-grade silicon in large quantities and at low cost is demonstrated. Prior work shows that these flames are stable and that relatively high purity silicon can be produced using Na + SiCl4 flames. Silicon of similar purity is obtained from Na + SiF4 flames although yields are lower and product separation and collection are less thermochemically favored. Continuous separation of silicon from the byproduct alkali salt was demonstrated in a heated graphite reactor. The process was scaled up to reduce heat losses and to produce larger samples of silicon. Reagent delivery systems, scaled by a factor of 25, were built and operated at a production rate of 0.5 kg Si/h. Very rapid reactor heating rates are observed with wall temperatures reaching greater than 2000 K. Heat release parameters were measured using a cooled stainless steel reactor tube. A new reactor was designed.

Olsen, D. B.↗
NASA NTRS1979

A theoretical study of heterojunction and graded band gap type solar cells

The work performed concentrated on including multisun effects, high temperature effects, and electron irradiation effects into the computer analysis program for heterojunction and graded bandgap solar cells. These objectives were accomplished and the program is now available for such calculations.

Chiang, J. P. C.↗
NASA NTRS1979

The Production of Solar Cell Grade Silicon from Bromosilanes

A continuous Flow Reactor (CFR) process based on the hydrogen reduction of the bromosilanes SiBr4 and SiHBr3 was proposed. Initial experiments carried and directed at obtaining overall yield data for bromosilane reduction in the CFR, indicated the need for increased reactor residence time and deposition substrate particle packing density to fully characterize the kinetics (rate) and thermodynamics (yield) of observed silicon production. Fluidized bed experiments were therefore initiated to overcome these experimental difficulties, which showed both thermal decomposition and hydrogen reduction of SiHBr3 in a fluid bed reactor to present attractive closed-loop processes for producing solar cell grade polycrystalline silicon. No process selection could be made however due to the fact that preliminary optimization of 2 of 3 process stages in each case during the course of the experimental program showed comparable attainment of cost element objectives.

Schumacher, J. C.↗
NASA NTRS1979

Silicon Halide-alkali Metal Flames as a Source of Solar Grade Silicon

A program is presented which was aimed at determining the feasibility of using high temperature reactions of alkali metals and silicon halides to produce low cost solar-grade silicon. Experiments are being conducted to evaluate product separation and collection processes, measure heat release parameters for scaling purposes, and determine the effects of the reactants and/or products on materials of reactor construction. During the current reporting period, the results of heat release experiments were used to design and construct a new type of thick-wall graphite reactor to produce larger quantities of silicon. A reactor test facility was constructed. Material compatibility tests were performed for Na in contact with graphite and several coated graphites. All samples were rapidly degraded at T = 1200K, while samples retained structural strength at 1700K. Pyrolytic graphite coatings cracked and separated from substances in all cases.

Olson, D. B.↗
NASA NTRS1979

Semiconductor Grade, Solar Silicon Purification Project

A low cost by-product, SiF4, is reacted with mg silicon to form SiF2 gas which is polymerized. The (SiF2)x polymer is heated forming volatile SixFy homologues which disproportionate on a silicon particle bed forming silicon and SiF4. The silicon analysis procedure relied heavily on mass spectroscopic and emission spectroscopic analysis. These analyses demonstrated that major purification had occured and some samples were indistinguishable from semiconductor grade silicon (except possibly for phosphorus). However, electrical analysis via crystal growth reveal that the product contains compensated phosphorus and boron.

Ingle, W. M.↗
NASA NTRS1979

Method of purifying metallurgical grade silicon employing reduced pressure atmospheric control

A method in which a quartz tube is charged with chunks of metallurgical grade silicon and/or a mixture of such chunks and high purity quartz sand, and impurities from a class including aluminum, boron, as well as certain transition metals including nickel, iron, and manganese is described. The tube is then evacuated and heated to a temperature within a range of 800 C to 1400 C. A stream of gas comprising a reactant, such as silicon tetrafluoride, is continuously delivered at low pressures through the charge for causing a metathetical reaction of impurities of the silicon and the reactant to occur for forming a volatile halide and leaving a residue of silicon of an improved purity. The reactant which included carbon monoxide gas and impurities such as iron and nickel react to form volatile carbonyls.

Ingle, W. M.↗
NASA NTRS1979

Semiconductor grade, solar silicon purification project

Experimental apparatus and procedures used in the development of a 3-step SiF2(x) polymer transport purification process are described. Both S.S.M.S. and E.S. analysis demonstrated that major purification had occured and some samples were indistinguishable from semiconductor grade silicon (except possibly for phosphorus). Recent electrical analysis via crystal growth reveals that the product contains compensated phosphorus and boron. The low projected product cost and short energy payback time suggest that the economics of this process will result in a cost less than the goal of $10/Kg(1975 dollars). The process appears to be readily scalable to a major silicon purification facility.

Ingle, W. M.↗
NASA NTRS1980

Development of processes for the production of solar grade silicon from halides and alkali metals

High temperature reactions of silicon halides with alkali metals for the production of solar grade silicon in volume at low cost were studied. Experiments were performed to evaluate product separation and collection processes, measure heat release parameters for scaling purposes, determine the effects of reactants and/or products on materials of reactor construction, and make preliminary engineering and economic analyses of a scaled-up process.

Dickson, C. R.↗