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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 343 records · Page 19
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Understanding Defect Activation and Kinetics in Next Generation CdTe Absorbers

This project investigated the role of defects and dopants in cadmium telluride (CdTe) solar cells to improve efficiency and long-term stability. Advanced X-ray microscopy and spectroscopy techniques were used to map composition, identify defect structures, and measure charge collection at the nanoscale. These experimental results were combined with computational modeling to understand how dopants such as copper and arsenic interact with other elements during processing. The study found that many dopants become electrically inactive due to the formation of complexes with chlorine and oxygen, limiting carrier concentration and device performance. It also showed that selenium, used to enhance efficiency, can migrate within the material during both manufacturing and operation, altering local structure and potentially affecting stability. The project developed new diagnostic and analysis tools for studying photovoltaic materials and provided a mechanistic understanding of key performance limitations. These insights support the development of more efficient, stable, and cost-effective CdTe solar technologies for large-scale energy deployment.

14 SOLAR ENERGY↗
DOE OSTI2021

Novel Poly-Si:Ga/SiOx Passivating Contacts through Non-Equilibrium Doping

Poly-Si/SiOx passivating contacts are one of the key enablers for high-efficiency, low-cost c-Si solar cells. In recent years, record devices have reached efficiencies of 26% in the laboratory and 25% in the industry. The current cell structure utilizing a tunneling oxide passivating contact structure with a back phosphorus-doped poly- Si/SiOx passivating contact and a front boron diffused emitter suffers from large emitter recombination. Thus, replacing the front B diffused emitter with a p-type passivating contact is a route to overcome this deficiency. This gives rise to front/back poly-Si based passivating contacts. To address the low passivation performance of the B-doped poly-Si passivating contacts, we replace B with Ga as a novel p-type dopant to avoid dopant accumulation in the tunneling oxide, which is known to lead to large degradation loss in passivation quality. Here, we introduce a non-equilibrium method via pulsed laser melting to thermally melt and recrystallize the poly-Si and redistribute the dopants, achieving doping concentrations above the solid solubility limit (~4E19 cm-3). We demonstrate a good passivation quality with an iVoc of 721 mV with an active Ga doping concentration in poly-Si >1020 cm-3. Furthermore, we show a low contact resistivity of 33.2 +/- 9.3 mO cm2 using a diode model calculation. Finally, cross-section scanning spreading resistance microscopy was performed to determine the resistance profile across the non-homogeneously doped poly-Si layer.

c-Si↗
DOE OSTI2020

Mn-doped oxide nuclear fuel

A nuclear fuel includes uranium(IV) oxide (UO2) and manganese (Mn) as a dopant. The Mn dopant may be present in the fuel in an amount up to the solubility limit for Mn under a given set of conditions, for example, about 0.01 wt % to about 1 wt %. The nuclear fuel is substantially free of aluminum (Al). The nuclear fuel exhibits enhanced grain size development during sintering temperatures as low at 1400 K due to an increase in uranium sub-lattice vacancies induced by dissolution of the Mn dopant at interstitial defect sites. The Mn-doped nuclear fuel exhibits improved grain sizes at lower temperatures compared to Cr-, Al-, and undoped UO2, and therefore desirably exhibits lower fission gas release and higher plasticity, reducing the chances of fuel rod failure.

Cooper, Michael William Donald↗
DOE OSTI2021

Gallidation assisted impurity doping

In one embodiment, a product includes a structure comprising a material of a Group-III-nitride having a dopant, where a concentration of the dopant in the structure has a concentration gradient characteristic of diffusion of the dopant inward from at least a portion of a surface of the structure in a direction substantially normal to the portion of the surface. The structure has less than 1% decomposition of the Group-III-nitride at the surface of the structure.

Voss, Lars↗
DOE OSTI2021

Organic light emitting diode with split emissive layer

An organic light emitting diode (OLED) device includes an emissive layer having a first sublayer with a first emitter as a dopant, a second sublayer with a second emitter as a dopant, and a third sublayer with a third emitter as a dopant. The second sublayer is between the first sublayer and the third sublayer. A concentration of the first emitter in the first sublayer exceeds a concentration of the third emitter in the third sublayer, and the concentration of the third emitter in the third sublayer exceeds a concentration of the second emitter in the second sublayer.

Li, Jian-Jun↗
DOE OSTI2024

Self-compensation of group-V acceptors in CdTe

Cadmium Telluride is at the core of an important thin-film technology for photovoltaics that is already commercially available, yet the CdTe-based solar cell efficiency remains limited at 22%, well below the theoretical limit of ~30%. Increasing the hole concentration is crucial for higher efficiency, and group-V elements such as As, P, and Sb are potential dopants as they are shallow acceptors. Nevertheless, group-V doped p-type CdTe often exhibits low doping activation, and the compensation source remains debated. Here, we performed hybrid density functional calculations with spin-orbit coupling to investigate possible sources of hole compensation in group-V doped CdTe. First, regarding possible self-compensation of the group-V dopants, we find that the formation of AX centers is unlikely since they are found to be unstable relative to the shallow acceptor forms. However, if the group-V dopants come in during growth (such as dimer molecules As2, P2, and Sb2), we find that the impurity atoms, which would occupy nearest neighbor sites, maintain the V-V bonds, limiting the hole density. For the native defects, our study reveals that Cd interstitial is the lowest energy donor defect in p-type CdTe. Still, it has a small migration barrier of 0.5 eV, making it highly mobile and unstable at room temperature. The Te vacancy is the next lowest formation energy donor. The migration barrier of 1.4 eV indicates that the Te vacancy is stable at room temperature. The antisite CdTe is also a donor, with low formation energy and stable at room temperature, potentially limiting the hole concentration. Our results, therefore, shed light on possible compensation centers and some guidance on how to avoid them.

14 SOLAR ENERGY↗
DOE OSTI2024

Effects of N-Doping on Silicon Carbide

Silicon carbide (SiC) is a widely preferred material within many industries due to its favorable properties, most notably its low electrical resistivity at high temperatures, excellent thermal conductivity, and sturdy mechanical properties. Doping, particularly n-type doping, is shown to extremely reduce electrical resistivity, but due to structural changes within the lattice caused by interaction with thermal neutrons, it is possible that other attributes of SiC may also be affected. In addition to review of past literature and data, four-point probe testing, scanning electron microscopy, nanoindentation, strength tests, differential scanning calorimetry and laser flash analysis were used to investigate the effects of n-doping 3C ß-phase SiC. According to temperature dependent measurements, electric resistivity and thermal conductivity both declined as dopant levels increases. Dopant levels are shown to have a significant effect on the mechanical performance of SiC, with the highest dopant levels (4 x 1018 cm-3) providing a 40% decrease in elastic modulus from 420 GPa to 258 GPa and a 30% decrease in hardness from 40 GPa to 27.7 GPa. These values are still above average and doped SiC may prove valuable for nuclear applications.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Cathode materials for secondary batteries

An active cathode material containing particles with a core containing a lithium transition metal oxide, each core at least partially encapsulated by a layer including the lithium transition metal oxide and dopant cation; and an outer layer containing metal oxide; wherein the dopant cation is selected from the group consisting of Al, Ti, Sn, Mg, Zr, Cu, Fe, Ca, W, Ga, Sc, Y, La, Hf, V, In, Nb, Ta, and any combination of two or more thereof; and the dopant cation is present in an amount of 10 wt. % or less of the particle.

Amine, Khalil↗
DOE OSTI2022

Benzimidazole Based Hole‐Transporting Materials for High‐performance Inverted Perovskite Solar Cells

Abstract Interfaces play a decisive role in perovskite solar cells’ power conversion efficiency and their long‐term durability. Small‐molecule hole‐transporting materials (HTMs) have grabbed enormous attention due to their structural flexibility, material properties, and stabilities, allowing for improved operational durability in perovskite photovoltaics. This study synthesizes and investigates a new class of benzimidazole‐based small molecules, named YJS001 and YJS003 , serving as the HTMs to enable high‐efficiency mixed‐cation mixed‐halide perovskite solar cells. The benzimidazole‐based materials are dopant‐free HTMs composed of donor and acceptor building blocks that are designed to engineer the energy level alignment near the HTM/perovskite interface. Mixed‐cation mixed‐halide perovskites can be grown uniformly on both HTMs with large crystalline grains. It is discovered that the donor‐rich YJS003 ‐based solar cell exhibits a high open‐circuit voltage of 1.09 V with a champion power conversion efficiency of over 20%. Power‐dependent current–voltage characteristics of the solar cells are analyzed, from which the high performance of YJS003's excellent hole mobility and well‐aligned energy level is attributed. This work introduces a new class of benzimidazole‐based small molecules as HTMs, that paves the path for dopant free interface material development for commercialization of perovskite solar cells.

14 SOLAR ENERGY↗
DOE OSTI2019

Oxidation and anion lattice defect signatures of hypostoichiometric lanthanide-doped UO 2

A series of sintered UO 2 pellets doped with lanthanide (Ce, Nd, Yb) elements were investigated using powder X-ray diffraction, Raman spectroscopy, thermogravimetric analyses and differential scanning calorimetry. A combination of electron microprobe and thermogravimetric analyses, for oxygen content, enabled precise determination of the hypostoichiometry for lanthanide-doped samples at 1 and 5 atom percent. Two Raman laser wavelengths (785 and 455 nm) have afforded greater sensitivity to spectroscopic signatures of the phonon bands (1LO and 2LO) associated with oxidation of (U 1-y M y )O 2-x and the anion defects introduced by lanthanide substitution. Oxygen hypostoichiometry forces a reduction in the average coordination number surrounding (U,M) sites, which is compensated by a decrease in U-O bond length, and concomitantly the lattice parameter, consistent with the obtained Raman spectra. The evolution of O/M ratio up to (U 1-y M y )O 2 after oxidation was also examined using Raman spectroscopy, revealing that the ‘defect band’, including a component attributed to oxygen vacancies (~540 cm -1 ) and the 1LO phonon (~575 cm -1 ) increased in intensity with increasing dopant concentration and upon oxidation. Here, the lanthanide dopants inhibited oxidation to U 3 O 8 , most prominently for Yb 5 at%, having been delayed by ~180 °C. Thermogravimetric analyses reveal an early oxidation feature that may be related to influx of O to satisfy hypostoichiometry up to (U 1-y M y )O 2 , possibly stabilizing a U 4 O 9 or U 3 O 7 intermediate, delaying oxidation to U 3 O 8 .

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2020

Multifunctional transition metal doped titanium dioxide reduced graphene oxide composites as highly efficient adsorbents and photocatalysts

A series of novel, mesoporous transition metal doped titanium dioxide-reduced graphene oxide composites are synthesized where the dopants were Mn, Co, Ni, Mo, and W. An in-situ synthesis method was used which involves a green, economic, hydrothermal process which can be scaled up easily. The composites show high surface areas (165–245 m 2 /g) and monomodal pore size distributions with average pore diameters in the range of 3–5 nm. The homogeneous distributions of the dopants are seen in SEM-EDX mapping data. The indirect band gaps of the composite materials are in the range of 2.20–2.48 eV. The composites show excellent dye adsorption activities where 100% adsorption of Rhodamine B occurs within 5 min when Mo–TiO 2 /rGO composite is used. Furthermore, the adsorbed dye can either be desorbed or photocatalytically degraded and the composite is reusable up to 10 cycles without losing significant activity. Mo–TiO 2 /rGO composite showed excellent adsorption of both cationic and anionic dyes at neutral pH.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Stoichiometric irreversibility of aged garnet electrolytes

Solid-state lithium batteries (SSLBs) have been regarded as one of the next-generation energy storage systems. With the adoption of solid-state electrolytes (SSEs) and lithium metal anodes, SSLBs enable higher energy density and more reliable safety than the state-of-the-art lithium-ion batteries. Among potential SSEs, the cation-doped Li 7 La 3 Zr 2 O 12 (LLZO) is promising for its high ionic conductivity (~10 –3 S cm –2 ) at room temperature and high stability with Li metal anode. However, the storage of doped LLZO in the ambient condition suffers the aging effect, including the structural transition (i.e. low-temperature cubic form) and the stoichiometric changes (i.e. Li 2 CO 3 ). These changes are detrimental to LLZO ionic conductivity and interfacial stability in SSLBs. To this end, in this study we are motivated to investigate the structural and stoichiometric reversibility of aged LLZO during thermal treatment. With the help of an in-situ synchrotron-based high-energy X-ray diffraction technique, our experiments revealed that the LLZO powders became a low-temperature cubic phase when exposed to the ambient condition for an extended period of time. A high temperature cubic form can be restored after a thermal treatment of the aged LLZO powder, regardless of the type of dopant. However, the restoration of the stoichiometry remained a challenge, and the degree of the restoration showed a clear dependence on the dopant chemistry.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Photosynthesis of a Photocatalyst: Single Atom Platinum Captured and Stabilized by an Iron(III) Engineered Defect

Single atom (SA), noble metal catalysts are of interest due to high projected catalytic activity while minimizing cost. Common issues facing many synthesis methodologies include complicated processes, low yields of SA product, and production of mixtures of SA and nanoparticles (NPs). Herein we report a simple, room-temperature synthesis of single Pt-atom decorated, anatase Fe-doped TiO 2 particles that leverages the Fe dopant as an engineered defect site to photodeposit and stabilize atomically dispersed Pt. Both particle morphology and Fe dopant location are based on thermodynamic principles (Gibbs-Wulff construction). CO-DRIFTS (diffuse reflectance infrared Fourier transform spectroscopy) reveals absence of bridge-bonded CO signal, confirming atomically dispersed Pt. XAS (x-ray absorption spectroscopy) of both Pt and Fe indicates Fe-O-Pt bonding that persists through catalytic cycling. Mass balance indicates Pt loading on single particles is 2.5 wt% Pt; single Pt-atom decorated nanoparticle yield is 17%. Pt containing particles show more than an order-of-magnitude increased photo-oxidation efficiency relative to particles containing only Fe. High single-atom-Pt yield, ease of synthesis, and high catalytic activity demonstrate the utility and promise of this method. In conclusion, the principles of this photodeposition synthesis allow for its generalizability towards other SA metals of catalytic interest.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Critical Role of Sc Substitution in Modulating Ferroelectricity in Multiferroic LuFeO 3

Understanding how individual dopants or substitutional atoms interact with host lattices enables us to manipulate, control, and improve the functionality of materials. However, because of the intimate coupling among various degrees of freedom in multiferroics, the atomic-scale influence of individual foreign atoms has remained elusive. Here, we unravel the critical roles of individual Sc substitutional atoms in modulating ferroelectricity at the atomic scale of typical multiferroics, Lu 1–x Sc x FeO 3 , by combining advanced microscopy and theoretical studies. Atomic variations in polar displacement of intriguing topological vortex domains stabilized by Sc substitution are directly correlated with Sc atom-mediated local chemical and electronic fluctuations. The local FeO 5 trimerization magnitude and Lu/Sc–O hybridization strength are found to be significantly reinforced by Sc, clarifying the origin of the strong dependence of improper ferroelectricity on Sc content. We find that this study could pave the way for correlating dopant-regulated atomic-scale local structures with global properties to engineer emergent functionalities of numerous chemically doped functional materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Exploring electron beam induced atomic assembly via reinforcement learning in a molecular dynamics environment

We report atom-by-atom assembly of functional materials and devices is perceived as one of the ultimate targets of nanotechnology. Recently it has been shown that the beam of a scanning transmission electron microscope can be used for targeted manipulation of individual atoms. However, the process is highly dynamic in nature rendering control difficult. One possible solution is to instead train artificial agents to perform the atomic manipulation in an automated manner without need for human intervention. As a first step to realizing this goal, we explore how artificial agents can be trained for atomic manipulation in a simplified molecular dynamics environment of graphene with Si dopants, using reinforcement learning. We find that it is possible to engineer the reward function of the agent in such a way as to encourage formation of local clusters of dopants under different constraints. This study shows the potential for reinforcement learning in nanoscale fabrication, and crucially, that the dynamics learned by agents encode specific elements of important physics that can be learned.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2020

Electron-electron interactions in low-dimensional Si:P delta layers

Scientists have long studied the physics of highly disordered conducting systems, seeking to understand the multitude of quantum phenomena that govern how electrons move through material systems. Recently, research into silicon-based quantum computing has made disordered conducting systems, such as Si:P monolayers embedded in isotopically pure Si, technically relevant. Consequently, applying and advancing the theoretical frameworks developed to describe electron behavior in disordered systems is a necessary objective in this field of research. This study investigates key components of dopant-based Si quantum computing devices: embedded regions of highly doped delta layers (δ layers). We examine the transport behavior and the electron-electron interaction (EEI) physics in embedded Si:P δ layers by means of self-consistent magnetotransport measurements. Parameters associated with the electronic transport offer a meaningful quantitative characterization of δ-layer quality and dopant diffusion. In addition, by examining EEI behaviors in a set of samples with embedded Si:P δ layers produced with different PH3 exposure procedures prior to Si encapsulation, we show how details of material synthesis affect the dimensionality of charge carrier interactions in embedded Si:P δ layers. Furthermore, the relationship between δ-layer confinement and EEI screening lengths is established here. This understanding will help validate important models used for device simulation and design and lead to improvements in the control of electrostatic gating of and tunneling transport through Si:P single atom transistors.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Highly Nonstoichiometric YAG Ceramics with Modified Luminescence Properties

Abstract Y 3 Al 5 O 12 (YAG) is a widely used phosphor host. Its optical properties are controlled by chemical substitution at its YO 8 or AlO 6 /AlO 4 sublattices, with emission wavelengths defined by rare‐earth and transition‐metal dopants that have been explored extensively. Nonstoichiometric compositions Y 3+x Al 5‐x O 12 ( x ≠ 0) may offer a route to new emission wavelengths by distributing dopants over two or more sublattices simultaneously, producing new local coordination environments for the activator ions. However, YAG typically behaves as a line phase, and such compositions are therefore challenging to synthesize. Here, a series of highly nonstoichiometric Y 3+x Al 5‐x O 12 with 0 ≤ x ≤ 0.40 is reported, corresponding to ≤20% of the AlO 6 sublattice substituted by Y 3+ , synthesized by advanced melt‐quenching techniques. This impacts the up‐conversion luminescence of Yb 3+ /Er 3+ ‐doped systems, whose yellow‐green emission differs from the red‐orange emission of their stoichiometric counterparts. In contrast, the YAG:Ce 3+ system has a different structural response to nonstoichiometry and its down‐conversion emission is only weakly affected. Analogous highly nonstoichiometric systems should be obtainable for a range of garnet materials, demonstrated here by the synthesis of Gd 3.2 Al 4.8 O 12 and Gd 3.2 Ga 4.8 O 12 . This opens pathways to property tuning by control of host stoichiometry, and the prospect of improved performance or new applications for garnet‐type materials.

Chemistry↗