DOE OSTI · 1805544
Gallidation assisted impurity doping
Abstract
In one embodiment, a product includes a structure comprising a material of a Group-III-nitride having a dopant, where a concentration of the dopant in the structure has a concentration gradient characteristic of diffusion of the dopant inward from at least a portion of a surface of the structure in a direction substantially normal to the portion of the surface. The structure has less than 1% decomposition of the Group-III-nitride at the surface of the structure.
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Voss, Lars, Dryden, Daniel Max, Frye, Clint, Harrison, Sara Elizabeth, Nikolic, Rebecca J., Shao, Qinghui. 2021-02-23. Gallidation assisted impurity doping. https://www.osti.gov/biblio/1805544
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