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New thread material outperforms silica. Sewing threads containing silicon carbide (SiC) yarn withstand temperatures of more than 1,100 degrees C. Intended for use in stitching thermally insulating blankets.
This report documents the post-flight condition of selected hardware taken from interior locations on the Long Duration Exposure Facility (LDEF). This hardware was generally in excellent condition. Outgassing data is presented for heat shrink tubing and fiberglass composite shims. Variation in total mass loss (TML) values for heat shrink tubing were correlated with location. Nylon grommets were evaluated for mechanical integrity; slight embrittlement was observed for flight specimens. Multi-layer insulation blankets, wire bundles, and paints in non-exposed interior locations were all in visibly good condition. Silicon-containing contaminant films were observed on silver-coated hex nuts at the space- and Earth-end interior locations.
A power source that converts a-particle energy into electricity by coulomb collision in doped diamond films is described. Alpha particle decay from curium-244 creates electron-hole pairs by free- ing electrons and holes inside the crystal lattice in N- and P-doped diamond films. Ohmic contacts provide electrical connection to an electronic device. Due to the built-in electric field at the rectifying junction across the hT- and P-doped diamond films, the free electrons are constrained to traveling in generally one direction. This one direction then supplies electrons in a manner similar to that of a battery. The radioactive curium layer may be disposed on diamond films for even distribution of a-particle radiation. The resulting power source may be mounted on a diamond substrate that serves to insulate structures below the diamond substrate from a-particle emission. Additional insulation or isolation may be provided in order to prevent damage from a-particle collision. N-doped silicon may be used instead of N-doped diamond.
Review of the results of a program aimed at obtaining a better understanding of the long-term performance of a thermoelectric generator using silicon germanium. The results obtained concern the contact resistivity of the thermoelectric couples, the electrical resistance of the multifoil thermal insulation, and the application of resistance coatings to the unicouples in order to prevent the loss of output power due to internal shunting paths.
Oxygen has profound effects on the key electronic properties and point defects of GaAs crystals. Thus, when added in the growth system, it decreases the free electron concentration and enhances the concentration of deep donors in the resulting crystals. Both of these effects are highly beneficial for achieving semi-insulating material and have been utilized for that purpose. They have been attributed to the tendency of oxygen to getter silicon impurities during crystal growth. Only recently, it has been found that oxygen in GaAs introduces also a midgap level, ELO, with essentially the same activation energy as EL2 but with four times greater electron capture cross section. The present report reassesses the electrical and optical properties of the midgap levels in GaAs crystals grown by the horizontal Bridgman (HB) and the Czochralski-LEC techniques. Emphasis is placed on the identification of the specific effects of ELO.
Introduction Hydrophobicity is the tendency of a fluid to repel another material or fluid. Hydrophobiciy can be measured through the wetting angle of the fluid on the surface of the other material. The greater the wetting angle, the more hydrophobic the surface is against the fluid. Hydrophobicity properties can be caused by one of two means, either through physical properties or chemical properties [\citenum{NARBUTT2020121}]. Physical hydrophobicity due to the surface of a solid creating surface roughness/patterning, minimizing the contact area between the fluid and the surface. This can be observed throughout nature, such as the surface of lotus leaves or butterfly wings. This physical property can be induced on a variety of surfaces, namely through laser etching, allowing a surface to be finely lineated to imitate these natural surfaces while controlling quantity, depth, and patterns of the etching on the surface [\citenum{10.1063/1.4905616}]. Physical hydrophobicity is therefore dependent on several variables, including the surface that the fluid is on and properties of the fluid itself, such as density and surface tension, both of which are dependent on temperature and/or pressure. Chemical hydrophobicity [\citenum{MadeiraHydrophobocicicici}] is due to the inherent chemical properties of the materials being used. This is most commonly due to the molecular structures changing the polarity of the materials. Depending on a nonpolar material will repel a polar material, proving to be hydrophobic, conversely if the polarity of the materials is the same (polar – polar, nonpolar – nonpolar), they will attract each other. Cryogenics refers to the behavior of materials at very low temperatures (<\ang{-100} C) [\citenum{ZOHURI20181}]. In space applications many things are inherently cryogenic, therefore this is an important field. There has been little research in how hydrophobicity changes at cryogenic temperatures. Cryogenic fluids are commonly used as fuels for spacecraft, therefore, integrating a hydrophobic surface can increase the transfer rate of the fuel. To test this, several experiments were set up to determine the hydrophobic properties of cryogenic fluids, including nitrogen (LN2), argon (LAr), oxygen (LOx), hydrogen (LH2), and methane (CH4), at cryogenic temperatures. Etched Wafer Testing A silicon wafer cut from a crystal of silicon [100] was used to model the potential hydrophobicity of various cryogenic fluids. Silicon [100] references to the crystallographic orientation of the silicon crystals in the wafer. These wafers were then laser etched to create a surface that is more likely to be hydrophobic. To test the hydrophobicity of the wafers at cryogenic temperatures, the temperatures of the wafers must be reduced to the same temperature as the cryogenic fluid being used to prevent rapid boil-off. To achieve this a double-walled vacuum insulated glass chamber was utilized. The chamber is open, with a double-walled glass that can be placed in a vacuum to remove condensation from the outside to allow easier viewing of the experiment. Furthermore, the silicon wafer's temperature must be lowered to the temperature of LN2, as well as maintain the temperature throughout the experiment. To achieve this a piece of 6061 aluminum was used, creating a stand-off for the wafer and it would allow for the insulation of the temperature of the wafers. The container was then filled with LN2 and once the LN2 stabilized the vaporization and the levels of LN2 dropped under the height of the wafer, the wafer was then allowed to air dry. Once the wafer was dry from the LN2, drops of LN2 were placed on the surface of the wafer for observation. During the first trial, the LN2 that was dropped on the surface displayed nonhydrophobic behaviors, spreading out along the surface, with a minimal wetting angle (too small to be measured). This process was repeated for liquid argon. Further testing with other cryogenic liquids will require different testing apparatuses due to being more volatile. Furthermore, several papers [\citenum{voltvolt7}] have suggested that running a voltage can induce a hydrophobic effect throughout a surface, further testing will include a voltage (constant and oscillating) to determine if voltage influences inducing hydrophobicity at cryogenic temperatures. Chemical Testing Coating the interior walls of the fuel tanks and fuel lines can successfully create a hydrophobic surface. The inherent problem is finding a material that can be used to coat the surface, furthermore, at these temperatures, the coating will remain solid, which could pose issues in maintaining the hydrophobic properties. To test this water (polar) is hydrophobic against oils and fats (nonpolar), therefore the same experiment as the etched wafer testing was conducted to determine if the hydrophobic properties will persist as the nonpolar material remains solid and the polar material remains a fluid. The water remained hydrophobic, allowing testing can expand to the cryogenic fluids. However, another hurdle is faced in finding a chemically opposite material to the cryogenic fluids being tested. As many of the cryogenic fluids being tested are diatomic, they are inherently nonpolar, therefore, the material used for the hydrophobic coating must be polar. Polar greases and lubricants are difficult to come by, however, lithium stearate, appears to be a potential candidate for creating a coated hydrophobic surface for cryogenic fluids at cryogenic temperatures.
Strain sensors that can be switched on and off were fabricated from p-channel IGFET on thin filament n-type silicon crystals with silicon dioxide layer sputtered over transistor for passivation. Applications include integration with microelectronic circuits for multiplexing.
A ceramic paste that can be applied relatively easily, either by itself or in combination with one or more layer(s) of high-temperature ceramic fabrics, such as silicon carbide or zirconia, has been invented as a means of patching cracks or holes in the reinforced carbon-carbon forward surfaces of a space shuttle in orbit before returning to Earth. The paste or the paste/fabric combination could also be used to repair rocket-motor combustion chambers, and could be used on Earth to patch similar high-temperature structures. The specified chemical composition of the paste admits of a number of variations, and the exact proportions of its constituents are proprietary. In general, the paste consists of (1) silicon carbide, possibly with addition of (2) hafnium carbide, zirconium carbide, zirconium boride, silicon tetraboride, silicon hexaboride, or other metal carbides or oxides blended with (3) a silazane-based polymer. Because the paste is viscous and sticky at normal terrestrial and outer-space ambient temperatures, high-temperature ceramic fabrics such as silicon carbide or zirconia fabric impregnated with the paste (or the paste alone) sticks to the damaged surface to which it is applied. Once the patch has been applied, it is smoothed to minimize edge steps as required [forward-facing edge steps must be < or equal to 0.030 in. (< or equal to 0.76 mm) in the original intended space-shuttle application]. The patch is then heated to a curing temperature thereby converting it from a flexible material to a hard, tough material. The curing temperature is 375 to 450 F (approx.190 to 230 C). In torch tests and arc-jet tests, the cured paste was found to be capable of withstanding a temperature of 3,500 F (approx. 1,900 C) for 15 minutes. As such, the material appears to satisfy the requirement, in the original space-shuttle application, to withstand re-entry temperatures of approx.3,000 F (approx. 1,600 C).
Semi-insulating manganese-doped gallium nitride (GaN:Mn) layers epitaxially grown on unintentionally doped GaN substrates were used as photoconductors in optically addressable light valves (OALVs) to withstand higher operational laser fluences compared to current state-of-the-art OALVs where bismuth silicon oxide (BSO; Bi 12 SiO 20 ) layers are used as photoconductors. GaN:Mn promises to be an exciting material for optoelectronic operations due to its large laser fluence handling capability and photoresponsivity near the band edge. The laser damage thresholds for the semi-insulating epitaxial GaN:Mn layer and the n-type substrate layer were measured to be 2.4 and 4.2 J/cm 2 , respectively. These are 6–10 times higher than that of BSO (0.4 J/cm 2 ). These measurements were performed by exposing ~200 sites on the samples to increasing fluence levels from a Gaussian pulsed Nd:YAG laser system (1064 nm) operating at a 5 Hz repetition rate with a 3 ns pulse width. Photoresponsivity of the GaN:Mn material was investigated at discrete wavelengths of 447, 405, and 380 nm. Further, the peak photoresponsivity was observed under an illumination wavelength of 380 nm and is attributed to stronger absorption. The OALV was fabricated by attaching a 110-μm-thick GaN:Mn layer grown on a 280-μm-thick n-GaN layer to a 3-mm-thick BK7 optical window. A twisted nematic E7 liquid crystal was introduced to the 5 μm gap between the two components. Transmission levels of >90% were achieved for the fabricated OALVs for a peak voltage of 40 V, constrained by transmission “bleed-through”.
The mirror and middle shroud were extracted for organics by washing the surfaces with solvents. The techniques are discussed. Ion microprobe analyses of the primarily atomic species are presented. The sources of the organic contaminants are: (1) hydrocarbons from lubricating oils and general terrestrial contamination, (2) dioctyl phthalate, probably from polyethylene bagging material (the plasticizer), (3) carboxylic acids from decomposition of grease and general terrestrial contamination, (4) silicones from sources such as lubricating oil, (5) outgassing of electronics and plasticizer, (6) vinyl alcohol and styrene copolymer, probably from electronic insulation, and (7) nitrogenous compounds from the lunar module and possibly Surveyor 3 engine exhaust.
A steam rankine solar receiver (SRSR) based on a tubular concept was designed and developed. The SRSR is an insulated, cylindrical coiled tube boiler which is mounted at the focal plane of a fully tracking parabolic solar reflector. The concentrated solar energy received at the focal plane is then transformed to thermal energy through steam generation. The steam is used in a small Rankine cycle heat engine to drive a generator for the production of electrical energy. The SRSR was designed to have a dual mode capability, performing as a once through boiler with and without reheat. This was achieved by means of two coils which constitute the boiler. The boiler core size of the SRSR is 17.0 inches in diameter and 21.5 inches long. The tube size is 7/16 inch I.D. by 0.070 inch wall for the primary, and 3/4 inch I.D. by 0.125 inch wall for the reheat section. The materials used were corrosion resistant steel (CRES) type 321 and type 347 stainless steel. The core is insulated with 6 inches of cerablanket insulation wrapped around the outer wall. The aperture end and the reflector back plate at the closed end section are made of silicon carbide. The SRSR accepts 85 kwth and has a design life of 10,000 hrs when producing steam at 1400 F and 2550 psig.
The results of the NPN bipolar transistor (BJT) (2N6023) breakdown voltage measurements were analyzed. Switching measurements were made on the NPN BJT, the insulated gate bipolar transistor (IGBT) (TA9796) and the N-channel metal oxide semiconductor field effect transistor (MOSFET) (RFH75N05E). Efforts were also made to build a H-bridge inverter. Also discussed are the plans that have been made to do life testing on the devices, to build an inductive switching test circuit and to build a dc/dc switched mode converter.
The Genesis Solar Wind Sample Re-turn Mission used a variety of materials as solar wind (SW) collectors. “Sapphire”, which is single crystal corundum, was ~6.7% of the collector material flown. But, a much higher percentage of Genesis sapphire collectors (SAP) survived the crash of the sample-return capsule as SAP is chemically inert, physically tough, and hard (MOHS 9, by definition). In fact, 39 sapphire fragments of bulk SW collector having areas ≥60 sq mm are available in JSC’s Genesis online catalog, whereas only 1 similarly sized silicon fragment is available (accessed 1/1/2020). In spite of the ease of accessing larger fragments, sapphire has not been popular among Genesis re-searchers because it is an electrical insulator (making SIMS more difficult) and its chemical inertness, high melting point and high hardness precludes the use of many mass-spectroscopic techniques. Recently, as alternative techniques for measuring Genesis samples are developed (e.g., synchrotron TXRF, INAA, laser ablation mass spectroscopy), more researchers are choosing to analyze sapphire. Thus, a number of researchers are actively studying how to best remove contamination from the Genesis sapphire surfaces. This report extends the task in Schmeling et al. that used polishing compounds to remove contamination from Genesis sapphire and focuses on contaminants (welded silicon, aluminum) that current chemical methods find recalcitrant.
Aryl diazonium electrografting is a powerful method for imparting molecular functionality onto various substrates by forming a stable carbon-surface covalent bond. While the high reactivity of the aryl radical intermediate makes this method fast and reliable, it can also lead to the formation of an insulating and disordered multilayer film. These thick films affect electrochemical performance, especially for semiconductor substrates used in photoelectrochemical applications. For this work we studied the effects of film thickness and composition by electrografting in situ-generated aminobenzene diazonium salts onto both n-type and p-type silicon electrodes at fixed potentials. Next, we attached ferrocene to the amine-terminated films and probed their (photo)electrochemical behavior. Cyclic voltammetry measurements showed decreased electrochemical reversibility with increasing diazonium film thickness; this reversibility was restored when ferrocene was incorporated throughout the film with a layer-by-layer deposition process. Finally, we compared the behavior of dark p-type electrodes to n-type photoelectrodes and observed differences in the electrochemical reversibility that we attribute to the change in potential drop across the two interfaces.
The feasibility of reducing troublesome nozzle blockage (by condensation deposits) in laboratory-scale solid rockets by addition of a silicone oil as a propellant ingredient was explored experimentally. An aluminized composite propellant and its counterpart with 1% silicone oil replacing part of the binder were fired in a 63.5 mm diameter, end-burning, all-metal burner. Pressure-time histories were recorded for all of the tests by a Taber gauge mounted at the downstream end of the chamber; temperature-time data at the nozzle throat were obtained in some of the runs by thermocouples having junctions positioned at the wall but insulated from the metal. Deposition of condensables on the nozzle walls causing a progressive increase in the chamber pressure with time was noted. The fraction of firings exhibiting practically no condensation was 59% with silicone and 32% without. On the average, temperature readings at the nozzle throat were higher with the silicone propellants. Although various phenomena may contribute to these findings, the results are not understood completely.
Low-buckled silicene, germanene, and stanene are group-IV graphene allotropes. They form a honeycomb lattice out of two interpenetrating (A and B) triangular sublattices that are vertically separated by a small distance Δ z . The atomic numbers Z of silicon, germanium, and tin are larger than that of carbon (Z C = 6), making them the first experimentally viable two-dimensional topological insulators. Those materials have a twice-energy-degenerate atomistic structure characterized by the buckling direction of the B sublattice with respect to the A sublattice [whereby the B atom either protrudes above (Δ z > 0) or below (Δ z < 0) the A atoms], and the consequences of that energy degeneracy on their elastic and electronic properties have not been reported thus far. Here, we uncover ferroelastic, bistable behavior on silicene, which turns into an average planar structure at about 600 K. Furthermore, the creation of electron and hole puddles obfuscates the zero-temperature spin-orbit coupling (SOC)-induced band gaps at temperatures as low as 200 K, which may discard silicene as a viable two-dimensional topological insulator for room-temperature applications. Germanene, on the other hand, never undergoes a low-buckled-to-planar two-dimensional transformation, becoming amorphous at around 675 K instead, and preserving its SOC-induced band gap despite band broadening. Stanene undergoes a transition onto a crystalline three-dimensional structure at about 300 K, preserving its SOC-induced electronic band gap up to that temperature. Unlike what is observed in silicene and germanene, stanene readily develops a higher-coordinated structure with a high degree of structural order. Furthermore, the structural phenomena are shown to have far-reaching consequences for the electronic and vibrational properties of those two-dimensional topological insulators.
Multi-layer insulating ceramic substrates can enable medium-voltage (MV) power modules with reduced peak electric field. This benefit is particularly important for MV silicon carbide (SiC) MOSFETs due to their higher operating voltages. Large-area, low-pressure assisted silver sintering is a potential solution for bonding substrates to create a multi-layer structure. The voiding content and defect density of the bond used to create the multi-layer substrate stack-up is critical to the reliability of the power module and the thermal performance, as this bond is in the primary path for heat dissipation in the power module structure. Here, samples of two-layer direct bonded aluminum (DBA) stacks have been fabricated and subjected to thermal cycling to analyze their reliability. Passive thermal cycling from -40 degrees C to 200 degrees C was performed. Cross-sections were cut at pre-determined intervals and imaged with Scanning Electron Microscopy (SEM). After 1000 thermal cycles, adhesive failures are observed between the sintered silver and the DBA surface. Cross-sections were cut and imaged via optical microscope and SEM. Thermal analyzer measurements are recorded on a 10-kV SiC power module utilizing the sintered DBA substrate stacks.