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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 343 records · Page 19
All sourcesNASA NTRSDOE OSTI
NASA NTRS1972

Cartographic evaluation of ERTS orbit and attitude data

The author has identified the following significant results. Return beam vidicon corrected (bulk) images have been precisely enlarged and rectified to control at a scale of 1:500,000. The results closely approach National Map Accuracy Standards. A MSS scene corrected (precision) image has been prepared and printed by color lithography. This Lake Tahoe area scene is the first cartographic product from ERTS that was available for economical distribution to the public in large numbers.

Mcewen, R. B.↗
NASA NTRS1975

Advances in superconducting quantum electronic microcircuit fabrication

Standard microelectronic fabrication techniques have been utilized to produce batch quantities of superconducting quantum electronic devices and circuits. The overall goal is a fabrication technology yielding circuits that are rugged and stable and capable of being fabricated controllably and reproducibly in sizeable quantities. Our progress toward this goal is presented, with primary emphasis on the most recent work, which includes the use of electron-beam lithography and techniques of hybrid microelectronics. Several prototype microcircuits have been successfully fabricated. These microcircuits are formed in a thin-film parent material consisting of layers of superconducting and normal metals, and use proximity-effect structures as the active circuit elements.

Kirschman, R. K.↗
NASA NTRS1976

Modeling of short channel MOS transistors

Higher frequency response in MOS technology can be obtained by shortening the channel length. One approach for doing this involves an employment of higher resolution lithography technology. A second approach makes use of a double-diffused MOS transistor (DMOS). It is pointed out that the ordinary method of modeling the transistors used in both approaches is not accurate. An investigation is conducted of the questions which have to be considered for DMOS modeling. The modeling of a short channel MOS transistor is discussed, taking into account the derivation of the threshold voltage equation. Excellent agreement between theoretical and experimental data shows the accuracy of the described modeling approach.

Lin, H. C.↗
NASA NTRS1979

Transformation pressure of ZnS by a new primary pressure technique

An experiment designed to measure the transformation pressure of zinc sulfide by a primary pressure method using an indentor-anvil system made of single-crystal diamond is discussed. A nonsorting electrode-grid which can be applied directly to the anvil using optical lithography is described, together with the procedures used for positioning.

Ruoff, A. L.↗
NASA NTRS1981

E-beam generated holographic masks for optical vector-matrix multiplication

An optical vector matrix multiplication scheme that encodes the matrix elements as a holographic mask consisting of linear diffraction gratings is proposed. The binary, chrome on glass masks are fabricated by e-beam lithography. This approach results in a fairly simple optical system that promises both large numerical range and high accuracy. A partitioned computer generated hologram mask was fabricated and tested. This hologram was diagonally separated outputs, compact facets and symmetry about the axis. The resultant diffraction pattern at the output plane is shown. Since the grating fringes are written at 45 deg relative to the facet boundaries, the many on-axis sidelobes from each output are seen to be diagonally separated from the adjacent output signals.

Arnold, S. M.↗
NASA NTRS1983

Vibration-Isolation Bench for Testing in Vacuum

Precise optical systems tested without contamination. Vibration isolator is one of three such units supporting cast-iron table. Table used to test optical systems in vacuum. Isolator made from commercially available components. Scaled-down version finds wider application in electron optics or electron-beam lithography.

Dankowski, J. C.↗
NASA NTRS1981

Impact of VLSI/VHSIC on satellite on-board signal processing

Forecasted improvements in IC fabrication techniques, such as the use of X-ray lithography, are expected to yield submicron circuit feature sizes within the decade of the 1980s. As dimensions decrease, reliability, cost, speed, power consumption and density improvements will be realized which have a significant impact on the capabilities of onboard spacecraft signal processing functions. This will in turn result in increases of the intelligence that may be deployed on spaceborne remote sensing platforms. Among programs oriented toward such goals are the silicon-based Very High Speed Integrated Circuit (VHSIC) researches sponsored by the U.S. Department of Defense, and efforts toward the development of GaAs devices which will compete with silicon VLSI technology for future applications. GaAs has an electron mobility which is five to six times that of silicon, and promises commensurate computation speed increases under low field conditions.

Aanstoos, J. V.↗
NASA NTRS1983

GaAs microwave devices and circuits with submicron electron-beam defined features

This paper describes the fabrication and application of GaAs FET's, both as discrete microwave devices and as the key active components in monolithic microwave integrated circuits. The performance of these devices and circuits is discussed for frequencies ranging from 3 to 25 GHz. The crucial fabrication step is the formation of the submicron gate by electron-beam lithography.

Wisseman, W. R.↗
NASA NTRS1983

Communications and logic systems at millimeter wave frequencies

Activities in materials development, lithography, FET experiments, and mixer diode fabrication are reported. In addition, articles are presented which address leakage effects in n-GaAs MESFET's and lateral nonuniform doping in GaAs MESFET's.

Source record↗
NASA NTRS1986

30 GHz monolithic balanced mixers using an ion-implanted FET-compatible 3-inch GaAs wafer process technology

An all ion-implanted Schottky barrier mixer diode which has a cutoff frequency greater than 1000 GHz has been developed. This new device is planar and FET-compatible and employs a projection lithography 3-inch wafer process. A Ka-band monolithic balanced mixer based on this device has been designed, fabricated and tested. A conversion loss of 8 dB has been measured with a LO drive of 10 dBm at 30 GHz.

Bauhahn, P.↗
NASA NTRS1988

Dual-Cathode Electron-Beam Source

Beam from either cathode electromagnetically aligned with exit port. Electron beam from either of two cathodes deflected by magnetic and electric fields to central axis. Mechanical alignment of beam easy because cathode axes, anode apertures, and electron trajectories coplanar. Applications where uninterrupted service needed: scanning electron microscopes, transmission electron microscopes, electron-beam lithography equipment, Auger instruments, and microfocused x-ray sources.

Bradley, James G.↗
NASA NTRS1989

Computer Aided Design of Computer Generated Holograms for electron beam fabrication

Computer Aided Design (CAD) systems that have been developed for electrical and mechanical design tasks are also effective tools for the process of designing Computer Generated Holograms (CGHs), particularly when these holograms are to be fabricated using electron beam lithography. CAD workstations provide efficient and convenient means of computing, storing, displaying, and preparing for fabrication many of the features that are common to CGH designs. Experience gained in the process of designing CGHs with various types of encoding methods is presented. Suggestions are made so that future workstations may further accommodate the CGH design process.

Urquhart, Kristopher S.↗
NASA NTRS1989

Design of a normal incidence multilayer imaging X-ray microscope

Normal incidence multilayer Cassegrain X-ray telescopes were flown on the Stanford/MSFC Rocket X-ray Spectroheliograph. These instruments produced high spatial resolution images of the sun and conclusively demonstrated that doubly reflecting multilayer X-ray optical systems are feasible. The images indicated that aplanatic imaging soft X-ray/EUV microscopes should be achievable using multilayer optics technology. A doubly reflecting normal incidence multilayer imaging X-ray microscope based on the Schwarzschild configuration has been designed. The design of the microscope and the results of the optical system ray trace analysis are discussed. High resolution aplanatic imaging X-ray microscopes using normal incidence multilayer X-ray mirrors should have many important applications in advanced X-ray astronomical instrumentation, X-ray lithography, biological, biomedical, metallurgical, and laser fusion research.

Shealy, David L.↗
NASA NTRS1991

Compact X-Ray And Extreme-Ultraviolet Monochromator

Monochromator for x-ray and extreme-ultraviolet radiation provides higher spectral resolution than achieved with thin-metal-foil broad-band-pass filters. Uses Bragg reflection to band-pass-filter radiation from high-intensity, broad-spectrum source. Operates over much broader x-ray and extreme-ultraviolet spectrum than devices based upon natural crystals. Intended to filter continuum radiation from sources like synchrotrons, laser plasma sources, free-electron lasers, and wigglers to produce monochromatic beams for testing and analysis of x-ray and extreme-ultraviolet telescopes and microscopes, for calibration of photographic films and detectors, for biological and biomedical research, for x-ray lithography, for processing of materials, and for research in properties of materials.

Hoover, Richard B.↗
NASA NTRS1991

Growing Cobalt Silicide Columns In Silicon

Codeposition by molecular-beam epitaxy yields variety of structures. Proposed fabrication process produces three-dimensional nanometer-sized structures on silicon wafers. Enables control of dimensions of metal and semiconductor epitaxial layers in three dimensions instead of usual single dimension (perpendicular to the plane of the substrate). Process used to make arrays of highly efficient infrared sensors, high-speed transistors, and quantum wires. For fabrication of electronic devices, both shapes and locations of columns controlled. One possible technique for doing this electron-beam lithography, see "Making Submicron CoSi2 Structures on Silicon Substrates" (NPO-17736).

Fathauer, Obert W.↗
NASA NTRS1991

Ultra-High-Spectral-Resolution X-Ray/EUV Monochromator

Ultra-high-spectral-resolution X-Ray/EUV monochromator depends on Bragg reflection from multilayer coats and diffraction by mutlilayer-coated grating to select narrow wavelength band from input beam. Its monochromatic output beam of accurately known wavelength very useful in testing and calibration of x-ray telescopes, x-ray microscopes, photographic films, and photodetectors; in research in biological and biomedical disciplines, x-ray crystallography, properties and processing of materials, and x-ray lasers; and in x-ray lithography.

Hoover, Richard B.↗
NASA NTRS1991

Submicron area NbN/MgO/NbN tunnel junctions for SIS mixer applications

The development of submicron area mixer elements for operation in the submillimeter wave range is discussed. High-current-density NbN/MgO/NbN tunnel junctions with areas down to 0.1 sq microns have been fabricated in both planar and edge geometries. The planar junctions were fabricated from in situ deposited trilayers using electron-beam lithography to pattern submicron area mesas. Modifications of fabrication techniques used in larger-area NbN tunnel junctions are required and are discussed. The NbN/MgO/NbN edge junction process using sapphire substrates has been transferred to technologically important quartz substrates using MgO buffer layers to minimize substrate interactions. The two junction geometries are compared and contrasted in the context of submillimeter wave mixer applications.

Leduc, H. G.↗
NASA NTRS1991

Design and analysis of aspherical multilayer imaging X-ray microscope

Spherical Schwarzschild microscopes for soft X-ray applications in microscopy and projection lithography employ two concentric spherical mirrors that are configured such that the third-order spherical aberration and coma are zero. Based on incoherent, sine-wave MTF calculations, the object-plane resolution of a magnification-factor-20 microscope is presently analyzed as a function of object height and numerical aperture of the primary for several spherical Schwarzschild, conic, and aspherical two-mirror microscope configurations.

Shealy, David L.↗