SEARCH · Engineering Papers

Results for “radiation hardness”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

SourceResearch connectionFrom yearThrough year

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 325 records · Page 18

All sources NASA NTRS DOE OSTI

NASA NTRS1977

A complementary MOS process

The complete sequence used to manufacture complementary metal oxide semiconductor (CMOS) integrated circuits is described. The fixed-gate array concept is presented as a means of obtaining CMOS integrated circuits in a fast and reliable fashion. Examples of CMOS circuits fabricated by both the conventional method and the fixed-gate array method are included. The electrical parameter specifications and characteristics are given along with typical values used to produce CMOS circuits. Temperature-bias stressing data illustrating the thermal stability of devices manufactured by this process are presented. Results of a preliminary study on the radiation sensitivity of circuits manufactured by this process are discussed. Some process modifications are given which have improved the radiation hardness of our CMOS devices. A formula description of the chemicals and gases along with the gas flow rates is also included.

Jhabvala, M. D.↗

NASA NTRS1977

Hybrid receiver study

The results are presented of a 4 month study to design a hybrid analog/digital receiver for outer planet mission probe communication links. The scope of this study includes functional design of the receiver; comparisons between analog and digital processing; hardware tradeoffs for key components including frequency generators, A/D converters, and digital processors; development and simulation of the processing algorithms for acquisition, tracking, and demodulation; and detailed design of the receiver in order to determine its size, weight, power, reliability, and radiation hardness. In addition, an evaluation was made of the receiver's capabilities to perform accurate measurement of signal strength and frequency for radio science missions.

Stone, M. S.↗

NASA NTRS1978

Preliminary design for a standard 10 sup 7 bit Solid State Memory (SSM)

A modular concept with three separate modules roughly separating bubble domain technology, control logic technology, and power supply technology was employed. These modules were respectively the standard memory module (SMM), the data control unit (DCU), and power supply module (PSM). The storage medium was provided by bubble domain chips organized into memory cells. These cells and the circuitry for parallel data access to the cells make up the SMM. The DCU provides a flexible serial data interface to the SMM. The PSM provides adequate power to enable one DCU and one SMM to operate simultaneously at the maximum data rate. The SSM was designed to handle asynchronous data rates from dc to 1.024 Mbs with a bit error rate less than 1 error in 10 to the eight power bits. Two versions of the SSM, a serial data memory and a dual parallel data memory were specified using the standard modules. The SSM specification includes requirements for radiation hardness, temperature and mechanical environments, dc magnetic field emission and susceptibility, electromagnetic compatibility, and reliability.

Hayes, P. J.↗

NASA NTRS1979

Fabrication of high efficiency and radiation resistant GaAs solar cells

Systematic improvements in fabrication yield were obtained by appropriate control of the liquid phase epitaxial growth process, contact fabrication and surface preparation. To improve radiation hardness, the junction depth was decreased while overcoming the penalty in decreased solar cell efficiency which tends to go hand-in-hand with the reduction of junction depth in (AlGa) As-GaAs solar cells. Cells were made with an AMO efficiency of 18% and a junction depth of 0.5 micrometers, as compared to junction depths on the order of 1.0 micrometers. With respect to the damage caused by proton irradiation, the nature of the observed damage was correlated to the energy and penetration depth of the damaging protons.

Kamath, S.↗

NASA NTRS1978

Design study for electronic system for Jupiter Orbit Probe (JOP)

The conceptual design of the Jupiter probe spectrometer is presented. Block and circuit diagrams are presented along with tabulated parts lists. Problem areas are considered to be (1) the schedule, (2) weight limitations for the electronic systems, and (3) radiation hardness of the electronic devices.

Elero, B. P., Jr.↗

NASA NTRS1980

The GaAs solar cell research and development programs of the Air Force

The compound GaAs is of interest for space application photovoltaics due to its inherent advantages over silicon. Higher efficiencies, superior radiation hardness, and a greater temperature resistance are the major advantages of GaAs over Si. Air Force programs look for ways of maximizing these advantages while minimizing disadvantages such as higher costs and weights. Four programs in GaAs photovoltaics are described and each program is discussed in terms of its objective, approach and status.

Masloski, K. T.↗

NASA NTRS1978

Characterization and modeling of radiation effects NASA/MSFC semiconductor devices

A literature review of the near-Earth trapped radiation of the Van Allen Belts, the radiation within the solar system resulting from the solar wind, and the cosmic radiation levels of deep space showed that a reasonable simulation of space radiation, particularly the Earth orbital environment, could be simulated in the laboratory by proton bombardment. A 3 MeV proton accelerator was used to irradiate CMOS integrated circuits fabricated from three different processes. The drain current and output voltage for three inverters was recorded as the input voltage was swept from zero to ten volts after each successive irradiation. Device parameters were extracted. Possible damage mechanisms are discussed and recommendations for improved radiation hardness are suggested.

Kerns, D. V., Jr.↗

NASA NTRS1981

Advances in space power research and technology at the National Aeronautics and Space Administration

Progress and plans in various areas of the NASA Space Power Program are discussed. Solar cell research is narrowed to GaAs, multibandgap, and thin Si cells for arrays in planar and concentrator configurations, with further work to increase cell efficiency, radiation hardness, develop flexible encapsulants, and reduce cost. Electrochemical research is concentrating on increasing energy and power density, cycle and wet stand life, reliability and cost reduction of batteries. Further development of the Ni-H2 battery and O2-H2 fuel cell to multihundred kW with a 5 year life and 30,000 cycles is noted. Basic research is ongoing for alkali metal anodes for high energy density secondary cells. Nuclear thermoelectric propulsion is being developed for outer planets exploration propulsion systems, using Si-Ge generators, and studies with rare earth chalcogenides and sulfides are mentioned. Power Systems Management seeks to harmonize increasing power supply levels with inner and outer spacecraft environments, circuits, demands, and automatic monitoring. Concomitant development of bipolar transistors, an infrared rectenna, spacecraft charging measurement, and larger heat pipe transport capacity are noted.

Mullin, J. P.↗

NASA NTRS1981

Virtual phase imager for Galileo

A CCD imaging array with a new virtual-phase technology that has been developed for use in a slow-scan imaging system for NASA's Galileo mission to Jupiter is described. Among its features are an absence of interlevel shorts, simplicity of fabrication, low dark current (less than 0.4 nA/sq cm), high full well, high quantum efficiency in the front side illumination mode, large dynamic range (greater than 5000), good charge transfer efficiency (0.99997), excellent linearity (0.2%), uniform pixel response (1%), and improved radiation hardness. It is noted that its operating voltages must be constrained to narrow windows to maintain good charge transfer efficiency and avoid the production of spurious and leakage charge.

Janesick, J. R.↗

NASA NTRS1983

GaAs solar cells for concentrator systems in space

Cells for operation in space up to more than 100 suns were made, and an AMO efficiency of 21% at 100 suns with these cells was obtained. The increased efficiency resulted not only from the higher open circuit voltage associated with the higher light intensity (higher short circuit current); it also benefitted from the increase in fill factor caused by the lower relative contribution of the generation recombination current to the forward bias current when the cell's operating current density is increased. The experimental cells exhibited an AMO efficiency close to 16% at 200 C. The prospect of exploiting this capability for the continuous annealing of radiation damage or for high temperature missions (e.g., near Sun missions) remains therefore open. Space systems with concentration ratios on the order of 100 suns are presently under development. The tradeoff between increased concentration ratio and increased loss due to the cell's series resistance remains attractive even for space applications at a solar concentrator ratio of 100 suns. In the design of contact configuration with low enough series resistance for such solar concentration ratios, the shallow junction depth needed for good radiation hardness and the thin AlGaAs layer thickness needed to avoid excessive optical absorption losses have to be retained.

Loo, R. Y.↗

NASA NTRS1982

New technologies for radiation-hardening analog to digital converters

Surveys of available Analog to Digital Converters (ADC) suitable for precision applications showed that none have the proper combination of accuracy and radiation hardness to meet space and/or strategic weapon requirements. A development program which will result in an ADC device which will serve a number of space and strategic applications. Emphasis was placed on approaches that could be integrated onto a single chip within three to five years.

Gauthier, M. K.↗

NASA NTRS1983

Growth and characterization of Czochralski-grown n and p-type GaAs for space solar cell substrates

Progress in LEC (liquid encapsulated Czochralski) crystal growth techniques for producing high-quality, 3-inch-diameter, n- and p-type GaAs crystals suitable for solar cell applications is described. The LEC crystals with low dislocation densities and background impurities, high electrical mobilities, good dopant uniformity, and long diffusion lengths were reproducibly grown through control of the material synthesis, growth and doping conditions. The capability for producing these large-area, high-quality substrates should positively impact the manufacturability of highly efficiency, low cost, radiation-hard GaAs solar cells.

Chen, R. T.↗

NASA NTRS1983

A sun acquisition sensor for spacecraft guidance and control

The combination of a strap-down analog sun acquisition sensor (AS) and an on-board digital programmable signal processor results in a versatile guidance and control system. The combination can orient the rotation axis of a spin-stabilized spacecraft to the sun no matter what the initial attitude of the spacecraft. During the sun orientation process, spacecraft spin rate can be sensed and supplied as an input to the control algorithm. If needed, the AS-signal processor combination can be used to perform a rhumb-line turn maneuver. In case of unexpected spacecraft operating conditions, or unplanned pointing directions, the signal processor program can be updated via earth-based transmission of another program to cover the new situation. Using only three radiation-hard cadmium-sulfide detectors, containing no moving parts, needing only a few microwatts of power, included in a volume of 550 cubic cm (a redundant pair), and weighing only 540 grams, the AS is a small, simple, sturdy sensing device.

Birnbaum, M. M.↗

NASA NTRS1984

Study of factors determining the radiation sensitivity of quartz crystal oscillators (A0189)

The correlation between defect cluster concentrations observed for different grades of quartz examined by transmission electron microscopy (TEM) and the electrical stability of quartz resonators exposed to complex radiation in an orbital LDEF was determined. It is demonstrated that the technique TEM provides a powerful method for studying the effect of radiation on crystalline quartz. Two factors suggest that the observed clusters may be responsible for the radiation-induced frequency drift and acoustic absorption effects associated with irradiated quartz resonators: (1) the clusters are expected to be very effective in modifying the piezoelectric properties of quartz because of the large strain fields associated with them; (2) both phenomena appear to be sensitive to the impurity concentration. It is suggested that TEM can be used to classify grades of quartz according to their suitability for use in radiation-hard resonators. This technique may identify the impurities that are responsible and thereby effect an improvement in the stability of quartz oscillators.

Venables, J. D.↗

NASA NTRS1982

Electron lithography STAR design guidelines. Part 2: The design of a STAR for space applications

The STAR design system developed by NASA enables any user with a logic diagram to design a semicustom digital MOS integrated circuit. The system is comprised of a library of standard logic cells and computr programs to place, route, and display designs implemented with cells from the library. Also described is the development of a radiation-hard array designed for the STAR system. The design is based on the CMOS silicon gate technology developed by SANDIA National Laboratories. The design rules used are given as well as the model parameters developed for the basic array element. Library cells of the CMOS metal gate and CMOS silicon gate technologies were simulated using SPICE, and the results are shown and compared.

Trotter, J. D.↗

NASA NTRS1982

Electron lithography STAR design guidelines. Part 3: The mosaic transistor array applied to custom microprocessors. Part 4: Stores logic arrays, SLAs implemented with clocked CMOS

The Mosaic Transistor Array is an extension of the STAR system developed by NASA which has dedicated field cells designed to be specifically used in semicustom microprocessor applications. The Sandia radiation hard bulk CMOS process is utilized in order to satisfy the requirements of space flights. A design philosophy is developed which utilizes the strengths and recognizes the weaknesses of the Sandia process. A style of circuitry is developed which incorporates the low power and high drive capability of CMOS. In addition the density achieved is better than that for classic CMOS, although not as good as for NMOS. The basic logic functions for a data path are designed with compatible interface to the STAR grid system. In this manner either random logic or PLA type structures can be utilized for the control logic.

Trotter, J. D.↗

NASA NTRS1985

I-V-T analysis of radiation damage in high efficiency Si solar cells

A detailed analysis of current-voltage characteristics of N(+)-P/P solar cells indicate that there is a combination of different mechanisms which results in an enhancement in the dark current and in turn deteriorates the photovoltaic performance of the solar cells after 1 MeV e(-) irradiation. The increase in the dark current is due to three effects, i.e., bulk recombination, space charge recombination by deep traps and space charge recombination through shallow traps. It is shown that the increase in bulk recombination current is about 2 to 3 orders of magnitude whereas space charge recombination current due to shallow traps increases only by an order or so and no space charge recombination through deep traps was observed after irradiation. Thus, in order to improve the radiation hardness of these devices, bulk properties should be preserved.

Banerjee, S.↗

NASA NTRS1985

DLTS analysis of radiation-induced defects in one-MeV electron irradiated germanium and Alsub0.17Gasub0.83As solar cells

The radiation-induced deep-level defects in one-MeV electron-irradiated germanium and AlxGal-xAs solar cell materials using the deep-level transient spectroscopy (DLTS) and C-V techniques were investigated. Defect and recombination parameters such as defect density and energy levels, capture cross sections and lifetimes for both electron and hole traps were determined. The germanium and AlGaAs p/n junction cells were irradiated by one-MeV electrons. The DLTS, I-V, and C-V measurements were performed on these cells. The results are summarized as follows: (1) for the irradiated germanium samples, the dominant electron trap was due to the E sub - 0.24 eV level with density around 4x10 to the 14th power 1/cu cm, independent of electron fluence, its origin is attributed to the vacancy-donor complex defect formed during the electron irradiation; (2) in the one-MeV electron irradiated Al0.17Ga0.83 as sample, two dominant electron traps with energies of Ec-0.19 and -0.29 eV were observed, the density for both electron traps remained nearly constant, independent of electron fluence. It is shown that one-MeV electron irradiation creates very few or no new deep-level traps in both the germanium and AlxGa1-xAs cells, and are suitable for fabricating the radiation-hard high efficiency multijunction solar cells for space applications.

Li, S. B.↗