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At least 325 records · Page 18
All sourcesNASA NTRSDOE OSTI
NASA NTRS1980

Defect structure of web silicon ribbon

The results of a preliminary study of two dendritic web samples are presented. The structure and electrical activity of the defects in the silicon webs were studied. Optical microscopy of chemically etched specimens was used to determine dislocation densities. Samples were mechanically polished, then Secco etched for approximately 5 minutes. High voltage transmission electron microscopy was used to characterize the crystallographic nature of the defects.

Cunningham, B.↗
NASA NTRS1981

Development of advanced Czochralski Growth Process to produce low cost 150 KG silicon ingots from a single crucible for technology readiness

The goals in this program for advanced czochralski growth process to produce low cost 150 kg silicon ingots from a single crucible for technology readiness are outlined. To provide a modified CG2000 crystal power capable of pulling a minimum of five crystals, each of approximately 30 kg in weight, 150 mm diameter from a single crucible with periodic melt replenishment. Crystals to have: resistivity of 1 to 3 ohm cm, p-type; dislocation density below 1- to the 6th power per cm; orientation (100); after growth yield of greater than 90%. Growth throughput of greater than 2.5 kg per hour of machine operation using a radiation shield. Prototype equipment suitable for use as a production facility. The overall cost goal is $.70 per peak watt by 1986. To accomplish these goals, the modified CG2000 grower and development program includes: (1) increased automation with a microprocessor based control system; (2) sensors development which will increase the capability of the automatic controls system, and provide technology transfer of the developed systems.

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NASA NTRS1984

Oscillating-Crucible Technique for Silicon Growth

Technique yields better mixing of impurities and superior qualiity crystals. Accellerated motion stirs melt which reduces temperature gradients and decreases boundary layer for diffusion of impurities near growing surface. Results better mixing of impurities into melt, decrease in tendency for dendritic growth or cellular growth and crystals with low dislocation density. Applied with success to solution growth and Czochralski growth, resulting in large crystals of superior quality.

Daud, T.↗
NASA NTRS1982

Advances in large-diameter liquid encapsulated Czochralski GaAs

The purity, crystalline perfection, and electrical properties of n- and p-type GaAs crystals grown by the liquid encapsulated Czochralski (LEC) technique are evaluated. The determination of the dislocation density, incidence of twinning, microstructure, background purity, mobility, and minority carrier diffusion length is included. The properties of the LEC GaAs crystals are generally comparable to, if not superior to those of small-diameter GaAs material grown by conventional bulk growth techniques. As a result, LEC GaAs is suitable for application to minority carrier devices requiring high-quality and large-area substrates.

Chen, R. T.↗
NASA NTRS1983

High purity, low dislocation GaAs single crystals

Liquid encapsulated Czochralski crystal growth techniques for producing undoped, high resistivity, low dislocation material suitable for device applications is described. Technique development resulted in reduction of dislocation densities in 3 inch GaAs crystals. Control over the melt stoichiometry was determined to be of critical importance for the reduction of twinning and polycrystallinity during growth.

Chen, R. T.↗
NASA NTRS1983

Growth and characterization of Czochralski-grown n and p-type GaAs for space solar cell substrates

Progress in LEC (liquid encapsulated Czochralski) crystal growth techniques for producing high-quality, 3-inch-diameter, n- and p-type GaAs crystals suitable for solar cell applications is described. The LEC crystals with low dislocation densities and background impurities, high electrical mobilities, good dopant uniformity, and long diffusion lengths were reproducibly grown through control of the material synthesis, growth and doping conditions. The capability for producing these large-area, high-quality substrates should positively impact the manufacturability of highly efficiency, low cost, radiation-hard GaAs solar cells.

Chen, R. T.↗
NASA NTRS1983

Stress studies in EFG

Stress distributions were calculated for a creep law to predict a rate of plastic deformation. The expected reduction in stresses is obtained. Improved schemes for calculating growth system temperature distributions were evaluated. Temperature field modeling examined the possibility of using horizontal temperature gradients to influence stress distribution in ribbon. The defect structure of 10 cm wide ribbon grown in the cartridge system was examined. A new feature is identified from an examination of cross sectional micrographs. It consists of high density dislocation bands extending through the ribbon thickness. A four point bending apparatus was constructed for high temperature study of the creep response of silicon, to be used to generate defects for comparison with as grown defects in ribbon. The feasibility of laser interferometric techniques for sheet residual stress distribution measurement is examined. The mathematical formalism for calculating residual stress from changes in surface topology caused by an applied stress in a rectangular specimen was developed, and the system for laser interferometric measurement to obtain surface topology data was tested on CZ silicon.

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NASA NTRS1985

Stress and efficiency studies

Optical and electrical characterization of defects has been started in EFG ribbon grown in a system that will be used to test the stress model. Temperature and stress field modeling aimed at defining low stress growth configuration is also in progress, and results will be used to guide development of the experimental system. The baseline defect configuration for ribbon grown at speeds of approx. 1 cm/min consists of dislocation densities of the order of 10 to the 5th power to 10 to the 6th power/sq cm, as well as saucer type etch pits and line defects. All these defects are inhomogeneously distributed. EBIC measurements indicate that diffusion lengths are in the range 20 to 60 microns, and significant spatial inhomogeneities occur through the ribbon thickness. Growth speed changes in the range 0.7-1.0 cm/min do not produce significant variations in ribbon defect configurations.

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NASA NTRS1985

On the use of internal state variables in thermoviscoplastic constitutive equations

The general theory of internal state variables are reviewed to apply it to inelastic metals in use in high temperature environments. In this process, certain constraints and clarifications will be made regarding internal state variables. It is shown that the Helmholtz free energy can be utilized to construct constitutive equations which are appropriate for metallic superalloys. Internal state variables are shown to represent locally averaged measures of dislocation arrangement, dislocation density, and intergranular fracture. The internal state variable model is demonstrated to be a suitable framework for comparison of several currently proposed models for metals and can therefore be used to exhibit history dependence, nonlinearity, and rate as well as temperature sensitivity.

Allen, D. H.↗
NASA NTRS1983

Creep fatigue life prediction for engine hot section materials (isotropic)

The activities performed during the first year of the NASA HOST Program, Creep Fatigue Life Prediction for Engine Hot Section Materials (Isotropic), being conducted by Pratt & Whitney Aircraft are summarized. The program is a 5 year, two part effort aimed at improving the high temperature crack initiation prediction technology for gas turbine hot section components. Significant results of the program produced thus far are discussed. Cast B1900 + Hf and wrought IN 718 were selected as the base and alternate materials, respectively. A single heat of B1900 + Hf was obtained and test specimens fabricated. The material was characterized with respect to grain size, gamma prime size, carbide distribution, and dislocation density. Monotonic tensile and creep testing has shown engineering properties within anticipated scatter for this material. Examination of the tensile tests has shown a transition from inhomogeneous planar slip within the grains at lower temperatures to more homogeneous matrix deformation. Examination of the creep tests has shown a transgranular failure mode at 1400 F and an intergranular failure mode at 1600 F and 1800 F.

Moreno, V.↗
NASA NTRS1985

Analysis of silicon stress/strain relationships

In the study of stress-strain relationships in silicon ribbon, numerous solutions were calculated for stresses, strain rates, and dislocation densities through the use of the Sumino model. It was concluded that many cases of failure of computer solutions to converge are analytical manifestations of shear bands (Luder's band) observed in experiments.

Dillon, O.↗
NASA NTRS1986

Process-induced defects in solar cell silicon

The microstructure of as-grown and processed, edge-defined film-fed grown, silicon ribbons was studied in order to identify the basic mechanisms responsible for the change of the as-grown defect structure during processing at elevated temperatures. The short heat treatment required to diffuse the p-n junction was sufficient to cause heterogeneous precipitation of impurity atoms, particularly transition metals. In addition, an elastic recovery of the ribbon occurred by dislocation glide, resulting in the formation of a polygonizationlike structure of subboundaries in the base. Mechanisms are suggested by which twin boundaries, acting as dislocation obstacles, can concentrate the relatively low average dislocation densities typical of edge-defined film-fed grown ribbons (10 to the 4th to 10 to the 8th/sq cm) to values which are sufficient to induce the formation of subgrainlike boundary structures.

Gleichmann, R.↗
NASA NTRS1985

Damping and modulus measurements in B2 transition metal aluminides

The polycrystalline intermetallic alloys FeAl (50.9 to 58.2 percent Fe), NiAl (49.2 to 55.9 percent Ni) and CoAl (48.5 to 52.3 percent Co) have the B2 structure and are of interest for high temperature applications. The PUCOT (piezoelectric ultrasonic composite oscillator technique) has been used to measure mechanical damping or internal friction and Young's modulus has been used as a function of temperature and composition for these materials. The modulus data for six CoAl alloys at temperatures up to 1300 K are presented. Examples are given of the strain amplitude dependence of internal friction for four CoAl alloys. The curves showed the break away phenomenon and are interpreted in terms of a theory dealing with the pinning of dislocation lines and their eventual break away at large strain amplitudes. The dislocation density was calculated to be about 10 to the 8th per sq m. For all the compositions (X1) of CoAl studied, a single equation could be fitted to the data.

Harmouche, M. R.↗
NASA NTRS1986

Ultrasonic determination of recrystallization

Ultrasonic attenuation was measured for cold worked Nickel 200 samples annealed at increasing temperatures. Localized dislocation density variations, crystalline order and colume percent of recrystallized phase were determined over the anneal temperature range using transmission electron microscopy, X-ray diffraction, and metallurgy. The exponent of the frequency dependence of the attenuation was found to be a key variable relating ultrasonic attenuation to the thermal kinetics of the recrystallization process. Identification of this key variable allows for the ultrasonic determination of onset, degree, and completion of recrystallization.

Generazio, E. R.↗
NASA NTRS1986

Stress and efficiency studies in EFG

The goals of this program were: (1) to define minimum stress configurations for silicon sheet growth at high speeds; (2) to quantify dislocation electrical activity and their limits on minority carrier diffusion length in deformed silicon; and (3) to study reasons for degradation of lifetime with increases in doping level in edge-defined film-fed growth (EFG) materials. A finite element model was developed for calculating residual stress with plastic deformation. A finite element model was verified for EFG control variable relationships to temperature field of the sheet to permit prediction of profiles and stresses encountered in EFG systems. A residual stress measurement technique was developed for finite size EFG material blanks using shadow Moire interferometry. Transient creep response of silicon was investigated in the temperature range between 800 and 1400 C in strain and strain regimes of interest in stress analysis of sheet growth. Quantitative relationships were established between minority carrier diffusion length and dislocation densities using Electron Beam Induced Current (EBIC) measurement in FZ silicon deformed in four point bending tests.

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NASA NTRS1987

Effect of hydrogen on deformation structure and properties of CMSX-2 nickel-base single-crystal superalloy

Material used in this study was a heat of the alloy CMSX-2. This nickel-based superalloy was provided in the form of oriented single crystals, solutionized for 3 hrs at 1315 C. It was then usually heat treated as follows: 1050 C/16h/air cool + 850 C/48h/air cool. The resulting microstructure is dominated by cuboidal, ordered gamma precipitates with a volume fraction of about 75% and an average size of 0.5 microns. In brief, the most compelling hydrogen induced-changes in deformation structure are: (1) enhanced dislocation accumulation in the gamma matrix; and (2) more extensive cross-slip of superdislocations in the gamma precipitates. The enhanced dislocation density in gamma acts to decrease the mean free path of a superdislocation, while easier cross slip hinders superdislocation movement by providing pinning points in the form of sessile jobs. Both processes contribute to the increase of flow stress and the notable work hardening that occurs prior to fracture.

Dollar, M.↗
NASA NTRS1985

Structural defect characterization of silicon dendritic web ribbons

An EBIC study of the cross section of silicon dendritic web ribbon has revealed that recombination-active structural defects are mainly concentrated in the inner part of the ribbon, particularly at and near the twin plane, whereas the material near the surface has significantly fewer defects. An analysis of the distribution of etch pits due to slip dislocations created by shear stress indicates that a minimum in the dislocation density is frequently observed in the ribbon adjacent to the dendrite.

Cheng, L. J.↗
NASA NTRS1986

Compliance matrices for cracked bodies

An algorithm is developed to construct the compliance matrix for a cracked solid in the integral-equation formulation of two-dimensional linear-elastic fracture mechanics. The integral equation is reduced to a system of algebraic equations for unknown values of the dislocation-density function at discrete points on the interval from -1 to 1, using the numerical procedure described by Gerasoulis (1982). Sample numerical results are presented, and it is suggested that the algorithm is especially useful in cases where iterative solutions are required; e.g., models of fiber-reinforced concrete, rocks, or ceramics where microcracking, fiber bridging, and other nonlinear effects are treated as nonlinear springs along the crack surfaces (Ballarini et al., 1984).

Ballarini, R.↗