NASA NTRS · 19830011351
High purity, low dislocation GaAs single crystals
Abstract
Liquid encapsulated Czochralski crystal growth techniques for producing undoped, high resistivity, low dislocation material suitable for device applications is described. Technique development resulted in reduction of dislocation densities in 3 inch GaAs crystals. Control over the melt stoichiometry was determined to be of critical importance for the reduction of twinning and polycrystallinity during growth.
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Chen, R. T., Holmes, D. E., Kirkpatrick, C. G.. 1983-02-01. High purity, low dislocation GaAs single crystals. https://ntrs.nasa.gov/citations/19830011351
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