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At least 325 records · Page 18

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NASA NTRS2017

High Performance Composite Dielectric Ink for Ultracapacitors

The present invention is a dielectric ink and means for printing using said ink. Approximately 10-20% of the ink is a custom organic vehicle made of a polar solvent and a binder. Approximately 30-70% of the ink is a dielectric powder having an average particle diameter of approximately 10-750 nm. Approximately 5-15% of the ink is a dielectric constant glass. Approximately 10-35% of the ink is an additional amount of solvent. The ink is deposited on a printing substrate to form at least one printed product, which is then dried and cured to remove the solvent and binder, respectively. The printed product then undergoes sintering in an inert gas atmosphere.

Rolin, Terry D.↗

NASA NTRS2018

The Possible Contribution of Dielectric Breakdown to Space Weathering on Phobos

The origins of Phobos and Deimos are uncertain; both are so space weathered that their surface compositions are difficult to determine using spectral reflectance measurements. We show how the winter temperatures and associated conditions in the polar regions of Phobos could make the regolith susceptible to space weathering from dielectric breakdown caused by solar energetic particles (SEPs). During SEP events, charged particles accumulate throughout the top ~ 1 mm of the regolith, which has low condukctivity, and create subsurface electric fields that act to dissipate any net buildup of charge. The faster the net charge accumulates, the larger the electric field needed to dissipate it. If the magnitude of the subsurface electric field exceeds ~10 6 V m -1, then dielectric breadkown is likely. This process rapidly dissipates the buildup of charge by vaporizing electrically conducting channels through the regolith. Dielectric breakdown

Space Weathering↗

NASA NTRS2018

How Dielectric Breakdown May Contribute to the Global Weathering of Regolith on the Moon

Space weathering is an important process on airless bodies, and it must be considered when interpreting data from planetary missions. Previous work has shown that solar energetic particles may cause dielectric breakdown in regolith within permanently shadowed regions near the poles of the Moon. Here, we predict that dielectric breakdown weathering could have melted and/or vaporized 2 − 9% of gardened (i.e., thoroughly mixed) regolith at the equator and 5 − 11% near the poles. If so, then ∼ 3 − 10% of all gardened regolith on the Moon may have experienced dielectric breakdown, and this process must be considered when analyzing remote sensing data or soil samples returned by the Luna and Apollo missions.

Jordan, A P.↗

NASA NTRS2021

Comparison of soil dielectric mixing models for Soil Moisture Retrieval using SMAP Brightness Temperature over croplands in India

The accurate estimation of soil moisture (SM) using microwave remote sensing depends mostly on careful selection of retrieval parameters among which the soil dielectric mixing model is the important one. These models are often categorized into empirical, semi-empirical or volumetric based on their methodologies and input data requirements. To study in detail, the comparative performance of four dielectric mixing models -- Wang & Schmugge model, Hallikainen model, Dobson model and Mironov model were used with Soil Moisture Active Passive (SMAP) L-band brightness temperature and Single Channel Algorithm for SM retrieval over agricultural landscapes in India. The highest performance statistics combination in terms of Root Mean Square Error (RMSE), correlation coefficient (R^(2)) and percentage bias (PBIAS) against the concurrent in-situ SM measurements were calculated at the selected validation sites. The overall results indicate that the best performance was given by the Mironov model (RMSE = 0.07 cu. m/cu. m), followed by Wang & Schmugge model (RMSE = 0.08 cu. m3/cu. m), Hallikainen model (RMSE = 0.09 cu. m/cu. m), Dobson model (RMSE = 0.10 cu. m/cu. m) and original SMAP radiometer SM (RMSE = 0.12 cu. m/cu. m). Findings of this study provides important insights into application and performance of dielectric mixing models in mapping surface SM variations. This study also underlines the pivotal role of local conditions for SM retrieval which should be carefully included in the algorithms.

Swati Suman↗

DOE OSTI2021

Doped gate dielectric materials

A field effect transistor having at least a gate, source, and drain electrodes and a semiconductor channel for controlling transport of charge carriers between the source and drain electrodes, the gate being insulated from the channel by an dielectric, at least a portion of the dielectric disposed between the gate electrode and the semiconductor channel being doped or imbued with the an element which if doped or imbued into a semiconductor material would cause the semiconductor to be p-type. The p-type element used to dope or imbue the gate dielectric is preferably Mg.

Cao, Yu↗

DOE OSTI2021

Imaging devices including dielectric metamaterial absorbers and related methods

Imaging devices including dielectric metamaterial absorbers and related methods are disclosed. According to an aspect, an imaging device includes a support. The imaging device also includes multiple dielectric metamaterial absorbers attached to the support. Each absorber includes one or more dielectric resonators configured to generate and emit thermal heat upon receipt of electromagnetic energy.

Padilla, Willie John↗

DOE OSTI2022

Characterization of Engineered Pinholes in Dielectric Stacks of High-Performance Poly-Silicon Passivating Contacts

Passivating contact structures are expected to be implemented in > 50 % of industrially manufactured silicon photovoltaics produced over the next decade. One type of passivating contact utilizes a c-Si/dielectric/doped poly-Si layer stack. In cases where the dielectric layer/s are thick enough to impede tunneling of charge carriers, it was shown that disruptions (pinholes) in the dielectric are required to facilitate transport.[1] Pinholes in SiOx layers have typically been formed via high temperature annealing that allows localized breakup of this layer. This approach has drawbacks; 1) high temperature annealing increases cost and 2) pinhole formation is sensitive to both the SiOx thickness and wafer surface morphology making control of density and dimensions difficult. Recently, an alternative method of pinhole formation relying on metal assisted chemical etching (MACE) was shown to allow control over pinhole areal densities.[2] Such control is critical as both the density and dimensions of the pinholes determine saturation current density and contact resistivity. The contacts formed with the MACE process are known as polysilicon on locally etched oxide or PLEO and also result in low saturation current densities and low contact resistivity due to SiOx passivation and engineered pinhole enabled charge carrier transport, respectively. Photovoltaic devices with efficiencies greater than 20 % have recently been produced with these contacts, demonstrating the viability of contacts with engineered pinholes. Experimentally, preferential local collection of excess charge carriers has been observed and definitively connected to thermally induced pinholes in thick SiOx layers within c-Si/SiOx/poly-Si contact structures.[3] Recent work has shown that enhanced local collection of excess carriers can result from enhanced diffusion of dopants through pinholes in SiOx layers.[4] This study was restricted to simulation and characterization of poly-Si with the same dopant type as the c-Si substrates. In this work we focus our analysis on boron doped poly-Si with different stacks of dielectric layers (PLEO and PLENO where the N refers to a SiNy layer on top of the SiOx) on n-type crystalline silicon. This provides insight into how engineered pinholes affect charge collection across the p-n junction. Like previous observations of locally enhanced carrier transport through thermally induced pinholes, the EBIC images in Figure 1 shows that engineered pinholes in PLENO (1a) and PLEO (1b) also exhibit locally enhanced carrier transport at pinhole locations (bright spots in the images). We will also present detailed correlative nanoscale structural and chemical analysis using TEM imaging and EELS analysis with sample preparation guided by EBIC imaging. This allows us to connect the density and dimensions of engineered pinholes with charge carrier transport and measured photovoltaic device parameters. Our findings will accelerate the adoption of PLEO and PLENO contacts in industrially manufactured photovoltaic devices.

EBIC↗

DOE OSTI2022

Doped gate dielectrics materials

Cao, Yu↗

DOE OSTI2023

Structural Explanation of the Dielectric Enhancement of Barium Titanate Nanoparticles Grown under Hydrothermal Conditions

Abstract When synthesized under certain conditions, barium titanate (BaTiO 3 , BTO) nanoparticles are found to have the non‐thermodynamic cubic structure at room temperature. These particles also have a several‐fold enhanced dielectric constant, sometimes exceeding 6000, and are widely used in thin‐layer capacitors. A hydrothermal approach is used to synthesize BTO nanocrystals, which are characterized by a range of methods, including X‐ray Rietveld refinement and the Williamson–Hall approach, revealing the presence of significant inhomogeneous strain associated with the cubic phase. However, X‐ray pair distribution function measurements clearly show the local structure is lower symmetry than cubic. This apparent inconsistency is resolved by examining 3D Bragg coherent diffraction images of selected nanocrystals, which show the existence of ≈50 nm‐sized domains, which are interpreted as tetragonal twins, and yet cause the average crystalline structure to appear cubic. The ability of these twin boundaries to migrate under the influence of electric fields explains the dielectric anomaly for the nanocrystalline phase.

36 MATERIALS SCIENCE↗

DOE OSTI2024

Free-Charge Carrier Generation in Homojunction Non-Polymeric Organic Semiconductor Films - The Role of the Optical Frequency Dielectric Constant

Engineering the dielectric constant (..epsilon..) to lower the exciton binding energy of the light-absorbing semiconductor can improve organic photovoltaic (OPV) device performance. Here, a series of materials are reported with 2-(3-oxo-2,3-dihydro-1H-inden-1-ylidene)malononitrile (INCN) acceptor end groups and a central glycolated bis(4H-cyclopenta[2,1-b:3,4-b']dithiophene) unit with large low-frequency (..epsilon..lf = 7.4-7.9 at 0.1-0.2 MHz) and optical-frequency (..epsilon..opt up to 6.6 at 2 x 1014 Hz) dielectric constants. The INCN end groups differed in whether they were protonated, chlorinated, or fluorinated, with the latter having the highest ..epsilon..opt. An ..epsilon..opt of 6.6 is predicted to lead to a low exciton binding energy of ~0.04 eV. Time-resolved microwave conductivity measurements showed a temperature-dependent yield-mobility product, with it increasing linearly from 340 K. The onset temperature was near that required to overcome the calculated exciton binding energy and indicates increased free charge generation in a homojunction film. Room temperature transient absorption spectroscopy revealed that photoexcitation rapidly converted to a lower energy state that was consistent with the formation of polarons or a charge transfer state. This work provides experimental evidence of the importance of ..epsilon..opt for the generation of free charges, and a strategy for development of efficient single chromophore homojunction OPV devices.

charge generation↗

DOE OSTI2021

Effect of chemical substituents attached to the zwitterion cation on dielectric constant

Materials with high dielectric constant, ε s , are desirable in a wide range of applications including energy storage and actuators. Recently, zwitterionic liquids have been reported to have the largest ε s of any liquid and, thus, have the potential to replace inorganic fillers to modulate the material ε s . Although the large ε s for zwitterionic liquids is attributed to their large molecular dipole, the role of chemical substituents attached to the zwitterion cation on ε s is not fully understood, which is necessary to enhance the performance of soft energy materials. Here, we report the impact of zwitterionic liquid cation chemical substituents on ε s (50 < ε s < 300 at room temperature). Dielectric relaxation spectroscopy reveals that molecular reorientation is the main contributor to the high ε s . The low Kirkwood factor g calculated for zwitterionic liquids (e.g., 0.1–0.2) suggests the tendency for the antiparallel zwitterion dipole alignment expected from the strong electrostatic intermolecular interactions. With octyl cation substituents, the g is decreased due to the formation of hydrophobic-rich domains that restrict molecular reorientation under applied electric fields. In contrast, when zwitterion cations are functionalized with ethylene oxide (EO) segments, g increases due to the EO segments interacting with the cations, allowing more zwitterion rotation in response to the applied field. The reported results suggest that high ε s zwitterionic liquids require a large molecular dipole, compositionally homogeneous liquids (e.g., no aggregation), a maximized zwitterion number density, and a high g, which is achievable by incorporating polar chemical substituents onto the zwitterion cations.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2022

Mid- to Far-Infrared Anisotropic Dielectric Function of HfS 2 and HfSe 2

The far-infrared (far-IR) remains a relatively underexplored region of the electromagnetic spectrum extending roughly from 20 to 100 µm in free-space wavelength. Research within this range has been restricted due to a lack of optical materials that can be optimized to reduce losses and increase sensitivity, as well as by the long free-space wavelengths associated with this spectral region. Here the exceptionally broad Reststrahlen bands of two Hf-based transition metal dichalcogenides (TMDs) that can support surface phonon polaritons (SPhPs) within the mid-infrared (mid-IR) into the terahertz (THz) are reported. In this vein, the IR transmission and reflectance spectra of hafnium disulfide (HfS 2 ) and hafnium diselenide (HfSe 2 ) flakes are measured and their corresponding dielectric functions are extracted. These exceptionally broad Reststrahlen bands (HfS 2 : 165 cm -1 ; HfSe 2 : 95 cm -1 ) dramatically exceed that of the more commonly explored molybdenum- (Mo) and tungsten- (W) based TMDs (≈5–10 cm -1 ), which results from the over sevenfold increase in the Born effective charge of the Hf-containing compounds. Further, this work therefore identifies a class of materials for nanophotonic and sensing applications in the mid- to far-IR, such as deeply sub-diffractional hyperbolic and polaritonic optical antennas, as is predicted via electromagnetic simulations using the extracted dielectric function.

36 MATERIALS SCIENCE↗

DOE OSTI2025

Dielectric Engineering of ZnO@ZIF‐8 for High‐Performance Triboelectric Nanogenerators and Self‐Powered Humidity Sensors

Porous metal oxide–metal-organic framework (MO x @MOF) hybrids offer synergistic effects that enhance surface charge density, electronic structure, and textural properties, making them ideal for self-powered sensing applications. Here, uniform, and pinhole-free ternary porous ZnO–PTFE@ZIF-8 hybrid films are developed on room-temperature co-sputtered ZnO–polytetrafluoroethylene (PTFE) composite films, where ZnO serves as a self-sacrificial precursor to precisely regulate ZIF-8 (Zn-MeIm 2 ) growth through solvothermal methods. The resulting TENG achieves a high output power density of 0.67 mW cm −2 , attributed to the synergistic effects of fluorine-rich PTFE and methyl-functionalized ZIF-8, which enhance surface charge density and dielectric response. By tuning PTFE content in the ZnO–PTFE composite, the dielectric constant and triboelectric output is optimized. The ZP60@ZIF-8-based device also demonstrates excellent humidity sensing performance, with a wide detection range (20–99% RH) and ultrahigh sensitivity (R V % of 19 900%, R I % of 19 325% at 99% RH). These results position ZP@ZIF-8-based TENGs as promising platforms for next-generation self-powered sensors and smart wearable electronics.

42 ENGINEERING↗

DOE OSTI2022

High Strain Response and Dielectric Properties of Bi 1/2 (Na 0.78 K 0.22 ) 1/2 TiO 3 Ceramics Doped with (Fe 1/2 Nb 1/2 ) 4+

Environmentally friendly piezoceramics Bi 1/2 (Na 0.78 K 0.22 ) 1/2 Ti 1-x (Fe 1/2 Nb 1/2 ) x O 3 (BNKT-FN) with FeNb (FN) ratios 0, 0.01, 0.02, 0.03 and 0.04 were synthesized via conventional solid-state reaction (CSSR). X-ray diffraction (XRD) analysis revealed that the FN complexes were completely dissolved in BNKT perovskite and the structural transition occurred from ferroelectric to relaxor state. The average grain sizes for x = 0, 0.01, 0.02, 0.03 and 0.04 were found to be 0.34 μm, 0.35 μm, 0.38 μm, 0.32 μm and 0.39 μm, respectively. It is observed that the grain size increased with the addition of FN, except for x = 0.03. Here, the coercive field (E c ) and remnant polarization (P r ) of the system were decreased with increasing FN concentration and the highest E c of 21.1 kV/cm and P r of 29.2 μC/cm 2 were noted for the base pure sample. In addition, the increase of FN content steadily broadened the dielectric anomaly at maximum dielectric constant temperature (T m ) in the BNKT-FN system. Consequently, unipolar normalized strain (S max /E max ) was found to be enhanced monotonically achieving the highest value of around 654 pm/V (x = 0.02). These properties suggest that the investigated system could be a promising eco-friendly candidate for piezoelectric actuators and many other applications requiring high piezoelectric induced strain.

25 ENERGY STORAGE↗

DOE OSTI2024

Stress due to electric charge density distribution in a dielectric slab

The spatial distribution of electric field due to an imposed electric charge density profile in an infinite slab of dielectric material is derived analytically by integrating Gauss’s law. Various charge density distributions are considered, including exponential and power-law forms. Here, the Maxwell stress tensor is used to compute a notional static stress in the material due to the charge density and its electric field. Characteristics of the electric field and stress distributions are computed for example cases in polyethylene, showing that field magnitudes exceeding the dielectric strength would be required in order to achieve a stress exceeding the ultimate tensile strength.

42 ENGINEERING↗

DOE OSTI2023

Performance analysis of single-phase immersion cooling system of data center using FC-40 dielectric fluid

Immersion cooling technologies have become an emerging cooling method for data center cooling. The studies available in open literature dealt with immersion cooling performance of data servers using mineral oil, EC-100, and Opticool 872552, but the studies focusing on the performance of FC-40 dielectric fluid is not available. Therefore, this study aimed to develop a single-phase liquid immersion cooling system using FC-40 dielectric fluid for a 1U (44.45 mm height) data server. The present study experimentally investigated the influence of different design and operating parameters, including the inlet/outlet port configuration (T and Z configurations), the bypass effect, the flowrate (1–3 LPM), the heating load (200–600 W), the inlet fluid temperature (15–35 °C), the presence of suction fan with various arrangements, and different heat sink bases (solid base, vapor chamber and heat pipe base). The results showed that the T-configuration could provide a 12.6% and 0.5–2.8 °C reduction in thermal resistance and case temperature compared to the Z-configuration, respectively. Additionally, the heat sink with heat pipe and vapor chamber base offered a minimum case temperature of 56.7 °C and 55.2 °C against the 60 °C experienced in the heat sink with flat plate base, respectively.

42 ENGINEERING↗

DOE OSTI2022

Structural investigation of the temperature-stable relaxor dielectric Ba 0.8 Ca 0.2 TiO 3 -Bi(Mg 0.5 Ti 0.5 )O 3

Aberration corrected scanning transmission electron microscopy (STEM) and electron diffraction have been used to disclose local structure and nano-chemistry in a Ca modified BaTiO 3 -Bi(Mg 0.5 Ti 0.5 )O 3 relax or dielectric ceramic which exhibits high and near-invariant relative permittivity over a wide temperature range. High resolution, synchrotron X-ray diffraction indicated a globally cubic structure ($Pm$$\overline{3}$$m$), but direct atomic-scale imaging by STEM revealed local tetragonal distortions. Nanopolar clusters were identified from B-site atomic displacement vectors measured relative to oxygen ion positions along < 100 > and < 110 > zone axes of integrated differential phase contrast (iDPC) STEM images, highlighting cluster sizes of 2–5 nm. Chemical analysis by STEM-energy dispersive X-ray spectroscopy and full pattern refinements of X-ray powder diffraction data each implied high levels of Bi vacancies within the matrix. The possibility that these A-site vacancies modulate the nanopolar structure and promote flattening of the permittivity-temperature response in this class of dielectric is discussed.

36 MATERIALS SCIENCE↗

DOE OSTI2021

SHarD: A beam dynamics simulation code for dielectric laser accelerators based on spatial harmonic field expansion

In order to demonstrate acceleration of electrons to relativistic scales by an on chip dielectric laser accelerator (DLA), a ponderomotive focusing scheme capable of capturing and transporting electrons through nanometer-scale apertures over extended interaction lengths has been proposed. Here we present a Matlab-based numerical code (SHarD) utilizing a spatial harmonic expansion of the fields within the dielectric structure to simulate the evolution of the beam phase space distribution in this scheme. The code can be used to optimize key-parameters for the accelerator performance such as the final energy, transverse spot size evolution and total number of electrons accelerated through currently fabricated structures. Eventually, the simulation model will be applied to inform the phase mask profile to be added to a pulse front tilt drive laser pulse using a liquid crystal mask in the experimental setup being assembled at UCLA Pegasus Laboratory.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗