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At least 325 records · Page 18

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NASA NTRS1983

Annual Conference on Nuclear and Space Radiation Effects, Gatlinburg, TN, July 18-21, 1983, Proceedings

Topics discussed include radiation effects in devices; the basic mechanisms of radiation effects in structures and materials; radiation effects in integrated circuits; spacecraft charging and space radiation effects; hardness assurance for devices and systems; and radiation transport, energy deposition and charge collection. Papers are presented on the mechanisms of small instabilities in irradiated MOS transistors, on the radiation effects on oxynitride gate dielectrics, on the discharge characteristics of a simulated solar cell array, and on latchup in CMOS devices from heavy ions. Attention is also given to proton upsets in orbit, to the modeling of single-event upset in bipolar integrated circuits, to high-resolution studies of the electrical breakdown of soil, and to a finite-difference solution of Maxwell's equations in generalized nonorthogonal coordinates.

Source record↗

NASA NTRS1983

Lead sulfide - Silicon MOSFET infrared focal plane development

A process for directly integrating photoconductive lead sulfide (PbS) infrared detector material with silicon MOS integrated circuits has been developed primarily for application in long (greater than 10,000 detector elements) linear arrays for pushbroom scanning applications. The processing technology is based on the conventional PMOS and CMOS technologies with a variation in the metallization. Results and measurements on a fully integrated eight-element multiplexer are shown.

Barrett, J. R.↗

NASA NTRS1983

Pinhole array capacitor for oxide integrity analysis

The integrity of the metal-poly oxide and the gate oxide was evaluated for several 5-micron CMOS-bulk processes. The pinhole array capacitor consists of diffused and poly fingers that form a network of MOS transistors (elements), which are capped by a deposited oxide and metal layer. The smallest structure used in this study contained about 15,000 elements and the largest structure contained about 68,000 elements. Each structure was divided into several subarrays. The structures are placed a number of times on each wafer. From a yield analysis of the subarrays, the elements per defect were found to be typically in excess of 50,000 elements/defect for the metal-poly oxide and 100,000 elements/defect for the gate oxide. From the switching behavior of the transistors, the gate oxide defects were tentatively identified as gate-to-body shorts rather than gate-to-diffusion shorts.

Buehler, M. G.↗

NASA NTRS1984

ISEE-3/ICE navigation analysis

Efforts to assure communications continuity and navigational accuracy for the ISEE-3 (now called the International Cometary Explorer - ICE) spacecraft as it heads toward a passage through the Giacobini-Zimmer (G-Z) comet tail are reviewed. Sufficient energy was gained with a series of lunar swingbys to take the rendezvous attempt possible. Communications will be by an S-band link though the upgraded Deep Space Network. The G-Z encounter is scheduled for September 1983. A 512 bps data rate will be supported by 64-3 m dishes at various global sites. The tracking will continue for 6 mos as the spacecraft moves into an orbit that parallels that of Halley's Comet. Ground-based recovery of the G-Z location in the spring of 1984 provided data for calculating the ephemerides required for configuring a major course correction for ICE 100 days before rendezvous.

Efron, L.↗

NASA NTRS1985

Studies on Physical Properties of Snow Based on Multi Channel Microwave Radiometer

The analysis of the data observed over a snow field with a breadboard model of MSR (microwave scanning radiometer) to be installed in MOS-1 (Marine Observation Satellite-1) indicates that: (1) the influence of incident angle on brightness temperature is larger in horizontal polarization component than in vertical polarization component. The effect of incident angle depends upon the property of snow with larger value for dry snow; (2) the difference of snow surface configuration consisting of artifically made parallel ditches of 5 cm depth and 5 cm width with spacing of 10 and 30 cm respectively which are oriented normal to electrical axis do not affect brightness temperature significantly; and (3) there is high negative correlation between brightness temperature and snow depth up to the depth of 70 cm which suggests that the snow depth can be measured with a two channel microwave radiometer up to this depth.

Tsuchiya, K.↗

NASA NTRS1982

Electron lithography STAR design guidelines. Part 1: The STAR user design manual

The STAR system developed by NASA enables any user with a logic diagram to design a semicustom digital MOS integrated circuit. The system is comprised of a library of standard logic cells and computer programs to place, route, and display designs implemented with cells from the library. Library cells of the CMOS metal gate and CMOS silicon gate technologies were simulated using SPICE, and the results are shown and compared.

Trotter, J. D.↗

NASA NTRS1982

Electron lithography STAR design guidelines. Part 2: The design of a STAR for space applications

The STAR design system developed by NASA enables any user with a logic diagram to design a semicustom digital MOS integrated circuit. The system is comprised of a library of standard logic cells and computr programs to place, route, and display designs implemented with cells from the library. Also described is the development of a radiation-hard array designed for the STAR system. The design is based on the CMOS silicon gate technology developed by SANDIA National Laboratories. The design rules used are given as well as the model parameters developed for the basic array element. Library cells of the CMOS metal gate and CMOS silicon gate technologies were simulated using SPICE, and the results are shown and compared.

Trotter, J. D.↗

NASA NTRS1984

Plasmasheet magnetic fields in the distant tail

Data from two deep passes of ISEE-3 through the earth's magnetotail are used to discuss the evolution of the plasmasheet magnetic field as a function of radial distance and geomagnetic activity (Kp). Attention is focused on plasmasheet intervals lasting at least 10 min as recorded during passes lasting 3 and 5 mos with apogees of 221 and 238 earth radii (ER). The dependencies of the By and Bz components on Kp were minimal, although Bz displayed a radial dependence. No relationship was observed between By and Bz. The Bz component changed from a northward orientation at 60-100 ER to a N-S dependence at 200-238 ER. Variations in field measurements indicated turbulence throughout the plasmasheet, also independent of Kp. The data support formation of a plasmoid during periods of high Kp, and can serve as limiting conditions for developing more accurate magnetotail models.

Tsurutani, B. T.↗

NASA NTRS1984

The two-lobe structure of the distant (at least 200 earth radii) magnetotail

Data from a 5 mos ISEE-3 passage through the magnetotail at distances beyond 60 earth radii (ER) are examined statistically to determine the tail structure out to 238 ER, the extent of the lobe and plasmasheet deviations from normal positions. The data include field and electron plots and plasma temperatures and densities. The maximum thickness of the plasmasheet was found to be similar to near-earth conditions, i.e., 9-15 ER, and was accompanied by an N-S dimension of 53-59 ER. No filamentary structures were derived, and the two-lobe structure was preserved. Possible causes of the asymmetry between the N-S and E-W scales are discussed.

Tsurutani, B. T.↗

NASA NTRS1984

Soft-error generation due to heavy-ion tracks in bipolar integrated circuits

Both bipolar and MOS integrated circuits have been empirically demonstrated to be susceptible to single-particle soft-error generation, commonly referred to as single-event upset (SEU), which is manifested in a bit-flip in a latch-circuit construction. Here, the intrinsic characteristics of SEU in bipolar (static) RAM's are demonstrated through results obtained from the modeling of this effect using computer circuit-simulation techniques. It is shown that as the dimensions of the devices decrease, the critical charge required to cause SEU decreases in proportion to the device cross-section. The overall results of the simulations are applicable to most integrated circuit designs.

Zoutendyk, J. A.↗

NASA NTRS1985

Physics and design of advanced IR bolometers and photoconductors

The state-of-the-art in photoconductors and bolometers is reviewed, centering on the materials development and concepts of extrinsic Si and Ge devices. It is suggested that in the field of 2-D detector arrays the hybrid circuits containing a photoconductor or a photodiode array, bonded with In solder to a switched MOS readout device with up to 60 x 60 elements, will produce superior performance. Other systems discussed include charge-coupled devices, developed for visible-light imaging and adapted to IR imaging, and charge-injection devices, a monolithic combination of a standard photoconductor and a metal-insulator-semiconductor capacitor. Finally, it is pointed out that a nonequilibrium theory of bolometer noise demonstrates the possibility of reducing the traditionally accepted noise limits by 60 percent for Johnson noise and 30 percent for the noise from phonons in the thermal link of the bolometer.

Haller, E. E.↗

NASA NTRS1985

The earth's surface studied from space; Proceedings of Workshop II of the COSPAR 25th Plenary Meeting, Graz, Austria, June 25-July 7, 1984

Consideration is given to: Landsat image data quality studies; a preliminary evaluation of Landsat-4 Thematic Mapper (TM) data for mineral exploration; and the early evaluation of TM data for mapping forest, agricultural and soil resources. Among other topics discussed are: shortwave infrared detection of vegetation; SPOT image quality and post-launch assessment; an evaluation of SPOT HRV simulation data for Corps of Engineers applications; and the application potential of SPOT imagery for topographic mapping. Consideration is also given to: verification studies of MOS-1 sensors; multiple sensor geocoded data; and the utility of proposed sensors for coastal engineering studies.

Ungar, S. G.↗

NASA NTRS1986

Submicron Silicon MOSFET

Process for making metal-oxide/semiconductor field-effect transistors (MOSFET's) results in gate-channel lengths of only few hundred angstroms about 100 times as small as state-of-the-art devices. Gates must be shortened to develop faster MOSFET's; proposed fabrication process used to study effects of size reduction in MOS devices and eventually to build practical threedimensional structures.

Daud, T.↗

NASA NTRS1985

Pinhole array capacitor for oxide integrity analysis

The integrity of the metal-poly oxide and the gate oxide was evaluated for several 5-micron CMOS-bulk process. The pinhole array capacitor consists of diffused and poly fingers that form a network of MOS transistors (elements), which are capped by a deposited oxide and metal layer. The smallest structure used contained about 15,000 elements and the largest structure contained about 68,000 elements. Each structure was divided into several subarrays. The structures are placed a number of times on each wafer. From a yield analysis of the subarrays, the elements per defect were found to be typically in excess of 50,000 elements/defect for the metal-poly oxide and 100,000 elements/defect for the gate oxide. From the switching behavior of the transistors, the gate oxide defects were tentatively identified as gate-to-body shorts rather than gate-to-diffusion shorts.

Buehler, M. G.↗

NASA NTRS1985

Reliability analysis

The objective was to search for and demonstrate approaches and concepts for fast wafer probe tests of mechanisms affecting the reliability of MOS technology and, based on these, develop and optimize test chips and test procedures. Progress is reported on four important wafer-level reliability problems: gate-oxide radiation hardness; hot-electron effects; time-dependence dielectric breakdown; and electromigration.

Source record↗

NASA NTRS1986

Capacitor-type micrometeoroid detectors

The metal oxide semiconductor (MOS) capacitor micrometeroid detector consists of a thin dielectric capacitor fabricated on a silicon wafer. In operation, the device is charged to a voltage level sufficiently near breakdown that micrometeoroid impacts will cause dielectric deformation or heating and subsequent arc-over at the point of impact. Each detector is capable of recording multiple impacts because of the self-healing characteristics of the device. Support instrumentation requirements consist of a voltage source and pulse counters that monitor the pulse of recharging current following every impact. An investigation has been conducted in which 0.5 to 5 micron diameter carbonized iron spheres traveling at velocities of 4 to 10 Km/sec were impacted on to detectors with either a dielectric thickness of 0.4 or 1.0 micron. This study demonstrated that an ion microprobe tuned to sufficiently high resolution can detect Fe remaining on the detector after the impact. Furthermore, it is also possible to resolve Fe ion images free of mass interferences from Si, for example, giving its spatial distribution after impact. Specifically this technique has shown that significant amounts of impacting particles remain in the crater and near it which can be analyzed for isotopic content. Further testing and calibration could lead to quantitive analysis. This study has shown that the capacitor type micrometeroid detector is capable of not only time and flux measurements but can also be used for isotopic analysis.

Wortman, J. J.↗

NASA NTRS1985

Development of optimized detector/spectrophotometer technology for low background space astronomy missions

This program was directed towards a better understanding of some of the important factors in the performance of infrared detector arrays at low background conditions appropriate for space astronomy. The arrays were manufactured by Aerojet Electrosystems Corporation, Azusa. Two arrays, both bismuth doped silicon, were investigated: an AMCID 32x32 Engineering mosiac Si:Bi accumulation mode charge injection device detector array and a metal oxide semiconductor/field effect transistor (MOS-FET) switched array of 16x32 pixels.

Jones, B.↗

NASA NTRS1985

1985 Annual Conference on Nuclear and Space Radiation Effects, 22nd, Monterey, CA, July 22-24, 1985, Proceedings

Basic mechanisms of radiation effects in structures and materials are discussed, taking into account the time dependence of interface state production, process dependent build-up of interface states in irradiated N-channel MOSFETs, bias annealing of radiation and bias induced positive charges in n- and p-type MOS capacitors, hole removal in thin-gate MOSFETs by tunneling, and activation energies of oxide charge recovery in SOS or SOI structures after an ionizing pulse. Other topics investigated are related to radiation effects in devices, radiation effects in integrated circuits, spacecraft charging and space radiation effects, single-event phenomena, hardness assurance and radiation sources, SGEMP/IEMP phenomena, EMP phenomena, and dosimetry and energy-dependent effects. Attention is given to a model of the plasma wake generated by a large object, gate charge collection and induced drain current in GaAs FETs, simulation of charge collection in a multilayer device, and time dependent dose enhancement effects on integrated circuit transient response mechanisms.

Jones, C. W.↗