NASA NTRS · 19860000004
Submicron Silicon MOSFET
Abstract
Process for making metal-oxide/semiconductor field-effect transistors (MOSFET's) results in gate-channel lengths of only few hundred angstroms about 100 times as small as state-of-the-art devices. Gates must be shortened to develop faster MOSFET's; proposed fabrication process used to study effects of size reduction in MOS devices and eventually to build practical threedimensional structures.
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Daud, T.. 1986-07-01. Submicron Silicon MOSFET. https://ntrs.nasa.gov/citations/19860000004
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