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Results for “LINE DEFECTS”

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At least 325 records · Page 18

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NASA NTRS2000

Homologous recombination as a potential target for caffeine radiosensitization in mammalian cells: reduced caffeine radiosensitization in XRCC2 and XRCC3 mutants

The radiosensitizing effect of caffeine has been associated with the disruption of multiple DNA damage-responsive cell cycle checkpoints, but several lines of evidence also implicate inhibition of DNA repair. The role of DNA repair inhibition in caffeine radiosensitization remains uncharacterized, and it is unknown which repair process, or lesion, is affected. We show that a radiosensitive cell line, mutant for the RAD51 homolog XRCC2 and defective in homologous recombination repair (HRR), displays significantly diminished caffeine radiosensitization that can be restored by expression of XRCC2. Despite the reduced radiosensitization, caffeine effectively abrogates checkpoints in S and G2 phases in XRCC2 mutant cells indicating that checkpoint abrogation is not sufficient for radiosensitization. Another radiosensitive line, mutant for XRCC3 and defective in HRR, similarly shows reduced caffeine radiosensitization. On the other hand, a radiosensitive mutant (irs-20) of DNA-PKcs with a defect in non-homologous end-joining (NHEJ) is radiosensitized by caffeine to an extent comparable to wild-type cells. In addition, rejoining of radiation-induced DNA DSBs, that mainly reflects NHEJ, remains unaffected by caffeine in XRCC2 and XRCC3 mutants, or their wild-type counterparts. These observations suggest that caffeine targets steps in HRR but not in NHEJ and that abrogation of checkpoint response is not sufficient to explain radiosensitization. Indeed, immortalized fibroblasts from AT patients show caffeine radiosensitization despite the checkpoint defects associated with ATM mutation. We propose that caffeine radiosensitization is mediated by inhibition of stages in DNA DSB repair requiring HRR and that checkpoint disruption contributes by allowing these DSBs to transit into irreparable states. Thus, checkpoints may contribute to genomic stability by promoting error-free HRR.

NASA Discipline Radiation Health↗

DOE OSTI2014

Carbon related donor bound exciton transitions in ZnO nanowires

Several shallow donor bound exciton photoluminescence (PL) transitions are reported in ZnO nanowires doped with carbon. The emission energies are in the range of 3360.8–3361.9 meV, close to previously reported emission lines due to excitons bound to donor point defects, such as Ga, Al, In, and H. The addition of small amounts of hydrogen during growth results in a strong enhancement of the PL of these carbon related emission lines, yet PL and annealing measurements indicate no appreciable bulk hydrogen. The observation of two electron satellites for these emission lines enables the determination of the donor binding energies. The dependence of exciton localization energy on donor binding energy departs somewhat from the usual linear relationship observed for group III donors, indicating a qualitatively different central cell potential, as one would expect for a complex. Emission lines due to excitons bound to ionized donors associated with these defects are also observed. The dependence of the PL emission intensities on temperature and growth conditions demonstrates that the lines are due to distinct complexes and not merely excited states of each other.

36 MATERIALS SCIENCE↗

DOE OSTI2020

Inhomogeneous broadening and splitting of lines in spectra of YAG : Tm

The shape and fine structure of lines due to Tm{sup 3+} f −f electronic transitions in multifunctional Y{sub 3}Al{sub 5}O{sub 12} garnet crystals have been studied by high-resolution spectroscopy. The observed inhomogeneously broadened lines have a Lorentzian shape, suggesting that point defects make a predominant contribution to the inhomogeneous broadening. Moreover, Y{sub Al} antisite defects, which are formed during high-temperature melt growth, produce spectral satellites near the main lines. (paper)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2011

Radiative defects in GaN nanocolumns: Correlation with growth conditions and sample morphology

Low-temperature photoluminescence is studied in detail in GaN nanocolumns (NCs) grown by plasma-assisted molecular beam epitaxy under various conditions (substrate temperature and impinging Ga/N flux ratio). The relative intensities of the different emission lines, in particular those related to structural defects, appear to be correlated with the growth conditions, and clearly linked to the NC sample morphology. We demonstrate, in particular, that all lines comprised between 3.10 and 3.42 eV rapidly lose intensity when the growth conditions are such that the NC coalescence is reduced. The well-known line around 3.45 eV, characteristic of GaN NC samples, shows, however, a behavior that is exactly the opposite of the other lines, namely, for growth conditions leading to reduced NC coalescence, this line tends to become more prominent, thus proving to be intrinsic to individual GaN NCs.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2018

Calculation of Multiply Charged States of Impurity-Defect Centers in Epitaxial Hg{sub 1–x}Cd{sub x}Te Layers

A method for calculating the states of multivalent donors and acceptors in Hg{sub 1–x}Cd{sub x}Te materials is developed. The ionization energies of deep acceptor and donor centers in epitaxial Hg{sub 1–x}Cd{sub x}Te films are calculated. The calculation method takes into account the influence of both the valence band and the conduction band on the states of impurity-defect centers. The calculations of energies for the levels of tetravalent acceptors and donors associated with crystalline structure defects indicate the intercenter nature of lines observed previously in the photoluminescence spectra of Hg{sub 1–x}Cd{sub x}Te films.

36 MATERIALS SCIENCE↗

NASA NTRS1971

Recombination luminescence in irradiated silicon - Effects of thermal annealing and lithium impurity.

Use of luminescence in irradiated silicon to determine the thermal stability of the defects responsible for the recombination. It is found that the defect responsible for the zero-phonon line at 0.97 eV has an annealing behavior similar to that of the divacancy and that the zero-phonon line at 0.79 eV anneals in a manner similar to the G-15 or K-center. Annealing at temperatures up to 500 C generates other defects whose luminescence is distinct from that seen previously. Addition of lithium to the material produces defects with new characteristic luminescence. Of particular importance is a defect with a level at E sub g -1.045 eV.

Johnson, E. S.↗

NASA NTRS2001

Friction pull plug welding: top hat plug design

Friction Pull Plug Welding is a solid state repair process for defects up to one inch in length, only requiring single sided tooling, or outside skin line (OSL), for preferred usage on flight hardware. The most prevalent defect associated with Friction Pull Plug Welding (FPPW) was a top side or inside skin line (ISL) lack of bonding. Bonding was not achieved at this location due to the reduction in both frictional heat and welding pressure between the plug and plate at the end of the weld. Thus, in order to eliminate the weld defects and increase the plug strength at the plug `top` a small `hat` section is added to the pull plug for added frictional heating and pressure.

Coletta, Edmond R.↗

NASA NTRS2002

Friction pull plug welding: top hat plug design

Coletta, Edmond R.↗

DOE OSTI2018

Inflexible stoichiometry in bulk pyrite FeS 2 as viewed by in situ and high-resolution X-ray diffraction

Non-stoichiometry is considered to be one of the main problems limiting iron pyrite, FeS 2 , as a photovoltaic absorber material. Although some historical diffraction experiments have implied a large solubility range of FeS 2-δ with δ up to 0.25, the current consensus based on calculated formation energies of intrinsic defects has lent support to line-compound behavior. Here it is shown that pyrite stoichiometry is relatively inflexible in both reductive conditions and in autogenous sulfur partial pressure, which produces samples with precise stoichiometry of FeS 2 even at different Fe/S ratios. By properly standardizing in situ gas-flow X-ray diffraction measurements, no significant changes in the lattice parameter of FeS 2 can be resolved, which portrays iron pyrite as prone to forming sulfur-deficient compounds, but not intrinsic defects in the manner of NiS 2-δ .

McAuliffe, Rebecca D.↗

DOE OSTI2011

Entanglement of nitrogen-vacancy-center ensembles using transmission line resonators and a superconducting phase qubit

We propose a potentially practical scheme for creating entanglement between two distant nitrogen-vacancy-center (N-V) spin ensembles using a current-biased Josephson junction superconducting qubit and transmission line resonators. The idea provides a scalable way to an N-V ensemble-based quantum network, which is close to the reach with currently available technology.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

NASA NTRS1992

Giant suppression of flux-flow resistivity in heavy-ion irradiated Tl2Ba2Ca2Cu3O10 films - Influence of linear defects on vortex transport

A large shift of the onset of flux-flow resistivity and the irreversibility line H(irr)(T) to higher temperatures is observed in Tl2Ba2Ca2Cu3O10 films containing linear defects created by Ag(+21) ion irradiation. The H(irr)(T), which has a characteristic L shape in highly anisotropic Tl and Bi based cuprates, becomes more like that of YBa2Cu3O7 in the presence of these defects. The Jc at 77 K also shows a large increase as a result of flux localization at the defects. The transport data indicate that in the H-T plane above H(irr)(T) of the unirradiated material, an ensemble of unoccupied defects is required for effective pinning of each flux line in the system.

Budhani, R. C.↗

NASA NTRS1994

Chromosomal damage observed in first postirradiation metaphases of repair-proficient and -deficient cell lines

Investigation of radiation induced damage in mutant strains of mammalian cells which show a defect in the rejoining of DNA double strand breaks provides an unique opportunity to examine the role of double strand breaks and the mechanisms of double strand break rejoining in the production of chromosome aberrations. This is particularly important, because there is increasing evidence that the DNA double strand break is the major lesion responsible for the formation of chromosome aberrations. To address this issue, we studied the induction of chromosome aberrations in xrs-5 cells, an x-ray sensitive strain of a Chinese hamster ovary cell line, which shows a defect in the rejoining of double strand breaks and their wild-type parent CHO-cells. Because radiosensitivity depends strongly on cellular age, the experiments were performed with synchronous cells.

Ritter, S.↗

DOE OSTI2019

Atomistic simulation of defect-dislocation interactions in concentrated solid-solution alloys

The interaction between point defects and dislocations plays a crucial role in governing material properties and microstructural evolutions under external stimuli, such as mechanical deformation and irradiation. Here, we present an atomistic study of the interactions between point defects and dislocations in concentrated solid-solution alloys (CSAs). Using molecular statics and kinetic Monte Carlo methods, we demonstrate that the strain energy and stress field distribution induced by a dislocation in CSAs are highly inhomogeneous along the dislocation line, which leads to heterogeneity of defect-dislocation interactions. Specifically, the interactions are spatially different and screened by the random arrangement of different elemental species. Furthermore, such localization of defect-dislocation interaction indicates that the “dislocation-bias” mechanism that is a driving force for radiation-induced void swelling can be suppressed in concentrated alloys.

36 MATERIALS SCIENCE↗

DOE OSTI2015

Effect of Dopants on the Adsorption of Carbon Dioxide on Ceria Surfaces

Here, high-surface-area nanosized CeO 2 and M-doped CeO 2 (M=Cu, La, Zr, and Mg) prepared by a surfactant-templated method were tested for CO 2 adsorption. Cu, La, and Zr are doped into the lattice of CeO 2 , whereas Mg is dispersed on the CeO 2 surface. The doping of Cu and La into CeO 2 leads to an increase of the CO 2 adsorption capacity, whereas the doping of Zr has little or no effect. The addition of Mg causes a decrease of the CO 2 adsorption capacity at a low Mg content and a gradual increase at a higher content. The CO 2 adsorption capacity follows the sequence Cu-CeO 2 >La-CeO 2 >Zr-CeO 2 ≈CeO 2 >Mg-CeO 2 at low dopant contents, in line with the relative amount of defect sites in the samples. It is the defect sites on the surface, not in the bulk of CeO 2 , modified by the dopants that play the vital role in CO 2 chemisorption. Lastly, the role of surface oxygen vacancies is further supported by an in situ IR spectroscopic study of the surface chemistry during CO 2 adsorption on the doped CeO 2 .

36 MATERIALS SCIENCE↗

DOE OSTI2023

Exploring non-invertible symmetries in free theories

Symmetries corresponding to local transformations of the fundamental fields that leave the action invariant give rise to (invertible) topological defects, which obey group-like fusion rules. One can construct more general (codimension-one) topological defects by specifying a map between gauge-invariant operators from one side of the defect and such operators on the other side. In this work, we apply such construction to Maxwell theory in four dimensions and to the free compact scalar theory in two dimensions. In the case of Maxwell theory, we show that a topological defect that mixes the field strength F and its Hodge dual *F can be at most an SO(2) rotation. For rational values of the bulk coupling and the θ-angle we find an explicit defect Lagrangian that realizes values of the SO(2) angle φ such that cos φ is also rational. We further determine the action of such defects on Wilson and ’t Hooft lines and show that they are in general non-invertible. We repeat the analysis for the free compact scalar Φ in two dimensions. In this case we find only four discrete maps: the trivial one, a Z 2 map dΦ → –dΦ, a Τ-duality-like map dΦ → i • dΦ, and the product of the last two.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

DOE OSTI2023

Invertible neural networks for real-time control of extrusion additive manufacturing

Material extrusion additive manufacturing (AM) has enabled an elegant fabrication pathway for a vast material library. Nonetheless, each material requires optimization of printing parameters generally determined through significant trial-and-error testing. To eliminate arduous, iteration-based optimization approaches, many researchers have used machine learning (ML) algorithms which provide opportunities for automated process optimization. Here, in this work, we demonstrate the use of an ML-driven approach for real-time material extrusion print-parameter optimization through in-situ monitoring of printed line geometry. To do this, we use deep invertible neural networks (INNs) which can solve both forward and inverse, or optimization, problems using a single network. By combining in-situ computer vision and deep INNs, the printing parameters can be autonomously optimized to print a target line width in 1.2 s. Furthermore, defects that occur during printing can be rapidly identified and corrected autonomously. The methods developed and presented in this work eliminate user-intensive, time-consuming, and iterative parameter discovery approaches that currently limit accelerated implementation of extrusion-based AM processes. Furthermore, the presented approach can be generalized to provide real-time monitoring and optimization pathways for increasingly complex AM environments.

36 MATERIALS SCIENCE↗

DOE OSTI2015

Characterizing performances of solder paste printing process at flexible manufacturing lines

Solder paste printing (SPP) has been a challenge on printed circuit board (PCB) manufacturing, evident by the proliferation of solder paste inspection equipment, or substituted by rigorous non-value added activity of manual inspections. The objective of this study is to characterize the SPP performance of various products manufactured in flexible production lines with different equipment configurations, and determine areas for process improvement. The study began by collecting information on SPP performance relative to component placement (CP) process, and to the proportion of mixed products. Using a clustering algorithm to group similar elements together, SPP performance across all product-production line pairs are statistically modeled to discover the trend and the influential factors. The main findings are: (a) Ratio of overall dpku for CP and SPP processes are 2:1; (b) logistic regression models of SPP performance indicated that only effects of product-production line and solder paste printer configuration are significant; (c) PCB circuitry design with BGA components and single solder paste printer line configurations generated the highest monthly defects, with the highest variation in the latter.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2015

Excitation mechanisms of Er optical centers in GaN epilayers

We report direct evidence of two mechanisms responsible for the excitation of optically active Er{sup 3+} ions in GaN epilayers grown by metal-organic chemical vapor deposition. These mechanisms, resonant excitation via the higher-lying inner 4f shell transitions and band-to-band excitation of the semiconductor host, lead to narrow emission lines from isolated and the defect-related Er optical centers. However, these centers have different photoluminescence spectra, local defect environments, decay dynamics, and excitation cross sections. The photoluminescence at 1.54 μm from the isolated Er optical center which can be excited by either mechanism has the same decay dynamics, but possesses a much higher excitation cross-section under band-to-band excitation. In contrast, the photoluminescence at 1.54 μm from the defect-related Er optical center can only be observed through band-to-band excitation but has the largest excitation cross-section. These results explain the difficulty in achieving gain in Er doped GaN and indicate approaches for realization of optical amplification, and possibly lasing, at room temperature.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗