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At least 325 records · Page 18

Interface-engineered (AlMnCoNiZn) 3 O 4 @PPy nanocomposites for superior lithium storage: Mechanism and performance

The practical application of graphite anodes in lithium-ion batteries (LIBs) is constrained by low specific capacity (372 mAh g -1 ) and sluggish kinetics. Here, to address these limitations, our present study focuses on high-entropy oxides (HEOs), which offer high theoretical capacity and structural stability. We synthesized spinel-structured (AlMnCoNiZn) 3 O 4 nanoparticles via a solution combustion method and fabricated an (AlMnCoNiZn) 3 O 4 @polypyrrole (PPy) nanocomposite through in-situ polymerization. Our electrochemical tests demonstrate that the PPy modification significantly enhances performance. While the pristine (AlMnCoNiZn) 3 O 4 delivered 445 mAh g −1 after 100 cycles at 100 mA g −1 and 350 mAh g −1 after 1000 cycles at 1000 mA g −1 , the (AlMnCoNiZn) 3 O 4 @PPy composite achieved 695 mAh g −1 after 100 cycles and maintained 675 mAh g −1 after 1000 cycles. Furthermore, the composite improved rate capacity at 1000 mA g −1 from 211 mAh g −1 to 403 mAh g −1 . This work highlights how conductive and flexible polymer modifications can dramatically improve the electrochemical properties of HEOs. The developed (AlMnCoNiZn) 3 O 4 @PPy composite provides a promising direction for designing advanced anodes to meet next-generation energy storage demands.

Anodes material↗

Preparation and electrochemical properties of high-entropy oxide Li x (CrMnCoNiZn) 3-x O 4

High-entropy oxides (HEOs) have gained significant attention as anode materials for lithium-ion batteries (LIBs) due to their high theoretical specific capacity, synergistic effects of constituent elements, and enhanced structural stability induced by high entropy. Here, this study investigates the electrochemical properties of a novel series of HEOs, Li x (CrMnCoNiZn) 3-x O 4 , synthesized via the sol-gel method. As lithium content increases, the electrochemical lithium storage performance of the HEOs improves, attributed to the rise in high-valence states and oxygen vacancies. The high valence state of elements facilitates greater electron transfer, enhancing the specific capacity during lithium insertion. Additionally, a higher concentration of oxygen vacancies boosts ionic conductivity and lithium ion diffusion kinetics, leading to superior electrochemical performance. Among the synthesized materials, Li 0.11 (CrMnCoNiZn) 2.89 O 4 exhibited the best performance, delivering a discharge capacity of 365 mAh·g −1 after 100 cycles at 100 mA·g −1 , 257 mAh·g −1 after 1000 cycles at 1 A·g −1 , and a rate capacity of 196 mAh·g −1 at 2 A·g −1 . The Li + diffusion coefficient reached 2.78 × 10 −15 cm 2 ·s −1 . This work not only deepens the understanding of HEOs' electrochemical behavior in LIBs but also provides insights into the impact of lithium ion substitution on their performance.

25 ENERGY STORAGE↗

Ionic Liquids in Analytical Chemistry: Fundamentals, Technological Advances, and Future Outlook

The development of new analytical methods most often focus on novel materials used to impart selectivity or sensitivity to the protocol. Ionic liquids (ILs) are a class of solvents that have been extensively explored as promising materials for various applications and continue to be explored due to their tunable physicochemical properties. These materials possess melting temperatures below 100 °C and can interact with analytes through a multitude of interactions afforded by their readily tunable chemical structure. These interactions include electrostatic, dispersive, hydrogen bonding, π–π, and dipolar interactions and can be modulated or strengthened based on the functional groups present within the chemical structure. ILs consist predominately of organic cations and either inorganic or organic anions, both of which can be functionalized with desired moieties. Common cation and anions found in IL chemical structures are presented in Figure 1. The unique polarity afforded by the ionic structure has also led to their increasing use in areas including sample preparation, chemical separations, electrochemistry, mass spectrometry, and spectroscopy.

Zeger, Victoria R. [Iowa State Univ., Ames, IA (Un↗

Ligand Hole Driven Metal–Insulator Transition Exemplified in a Layered Transition Metal Oxide

The interplay of cooperative Jahn–Teller (JT) distortions and charge-disproportionation (CD) with a strong electronic correlation in transition metal oxides leads to structural symmetry breaking. Both JT and CD often manifest in the form of significant modifications in electronic and structural properties such as band splitting, metal–insulator transitions (MIT), and enhanced electron lattice interactions. Notably, the charge-disproportionation is a key electronic feature that drives the MIT. Here, we demonstrate and quantify it using first-principles calculations combining density-functional theory, dynamical mean-field theory, and spin–lattice Monte Carlo simulations. Taking Ca 2 FeMnO 6 as a prototypical example of a correlated oxide, our ab initio study shows that MIT in Ca 2 FeMnO 6 arises from the partial localization of oxygen ligand holes at alternate Fe sites that control both charge and magnetic ordering. Interestingly, the band gap was found to be fundamentally controlled by the strength of the charge-transfer energy and not by the Mott–Hubbard interactions. The novel physics and insights presented in this work reveal promising routes for tuning the electronic functionality in transition-metal oxides.

36 MATERIALS SCIENCE↗

Doping Induced Magnetic and Electronic Phase Transitions in the Ferrimagnetic Half-Metallic Mn 4 Al 11 Compound

The future of spintronics and semiconductor applications demands materials with tailored electronic and magnetic properties. Here, this study uses density functional theory to investigate the electronic structure of the half-metallic compound Mn 4 Al 11 under uniaxial strain and in its Ge-substituted derivatives. Strain analysis shows that although the half-metallic band gap collapses under strain beyond −2%, the ferrimagnetic character remains stable. Ge substitution at six inequivalent Al sites in Mn 4 Al 11 results in varying degrees of metallicity and magnetic properties. Substitution at Al═ (000) induces a metal-to-insulator transition with an indirect semiconducting gap of 0.14 eV. Bonding and hybridization analyses reveal that local Mn–Al interactions due to Ge substitution significantly modify the local electronic structure, causing both electronic and magnetic phase transitions. This work highlights the effectiveness of substitutional doping in tuning half-metallicity and magnetic properties in inorganic solids, enabling the design of materials for future technological applications.

alloys↗

Selective electron-phonon coupling strength from nonequilibrium optical spectroscopy: The case of MgB 2

The coupling between quasiparticles and bosonic excitations rules the energy transfer pathways in condensed matter systems. The possibility of inferring the strength of specific coupling channels from their characteristic timescales measured in nonequilibrium experiments is still an open question. Here, in this study, we investigate MgB 2 , in which conventional superconductivity at temperatures as high as 39 K is mediated by the strong coupling between the conduction electrons and the 𝐸 2⁢𝑔 phonon mode. By means of broadband time-resolved optical spectroscopy, we show that this selective electron-phonon coupling dictates the nonequilibrium optical response of MgB 2 at early times (<100 fs) after photoexcitation. Furthermore, based on an effective temperature model analysis, we estimate its contribution to the total electron-boson coupling function extracted from complementary equilibrium spectroscopy approaches, namely, optical reflectivity and angle-resolved photoemission spectroscopy. The coupling strength with the 𝐸 2⁢𝑔 phonon modes is thus estimated to be 𝜆 ≃ 0.56, which is approximately half of the total coupling constant, in agreement with 𝑎𝑏 initio calculations from the literature. As a benchmark, broadband time-resolved optical spectroscopy is performed also on the isostructural and nonsuperconducting compound AlB 2 , showing that the nonequilibrium optical response relaxes on a slower timescale due to the lack of strongly coupled phonon modes. Our findings demonstrate the possibility to resolve and quantify selective electron-phonon coupling from nonequilibrium optical spectroscopy.

Mor, Selene [Università Cattolica del Sacro Cuore,↗

Charge order driven multiferroic behavior in Sr 4 Fe 6 O 12 : An ab-initio study

Here, in this paper, we report the structural, electronic, and ferroelectric properties of the layered mixed-valent transition-metal compound Sr 4 ⁢ Fe 6 ⁢O 12 (SFO). We demonstrate how SFO undergoes a phase transition from a high-temperature (𝑇) centrosymmetric tetragonal phase (𝑃⁢4 2 /𝑚⁢𝑛⁢𝑚) to a low-𝑇 polar orthorhombic phase (𝑃⁢𝑚⁢𝑛⁢2 1 ). The transition is primarily driven by charge ordering at tetrahedral Fe-layer creating Fe 3+ and Fe 2+ cations between two edge-sharing tetrahedra. This charge ordering induces electronic polarization, which is remarkably larger (3.5 times) in magnitude than ionic polarization and oppositely directed, giving a net polarization of 0.05 C/m 2 which is comparable to the state-of-the-art rare-earth nickelets and manganite perovskites. The direction of structural distortion, governed by the polar mode irrep $Γ^−_5$, depends sensitively on the type of magnetic ordering in the Fe-octahedral layer. Consequently, both the ionic and electronic polarization directions are influenced by magnetic ordering, suggesting the potential for multiferroic behavior with strong magnetoelectric coupling in this material.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Achieving uniaxial magnetic anisotropy in Ce2⁢Fe17⁢N3 through Co- and Sm-substitution

Th2⁢Zn17−type structure-based permanent magnets, such as Sm2⁢Fe17⁢N3, offer strong potential as alternatives to neodymium magnets (NdFeB), but their practical use is limited by phase stability and the scarcity of Sm. Ce-based counterparts, particularly Ce2⁢Fe17⁢N3, are attractive low-cost candidates, yet their intrinsic planar magnetic anisotropy restricts permanent-magnet performance. Here, we induce uniaxial magnetic anisotropy in Ce2⁢Fe17⁢N3 through two approaches: (i) Co substitution on the Fe sublattice and (ii) partial substitution of Ce with Sm. Combined density functional theory and experimental results show that both strategies modify the 3⁢𝑑–4⁢𝑓 interactions and band filling, yielding magnetization values up to ∼1.2T and magnetocrystalline anisotropy energies exceeding 1MJ/m3 for Co-alloyed compositions, with significantly larger anisotropy achieved upon Sm substitution. In addition, the Sm-substituted Ce2⁢Fe17⁢N3 samples exhibit enhanced high-temperature stability compared to Sm2⁢Fe17⁢N3. These findings demonstrate that Ce2⁢Fe17⁢N3-based alloys can deliver magnetic performance suitable for permanent-magnet applications while reducing cost and reliance on critical rare-earth elements, and they provide practical design guidelines for rare-earth-lean magnets for energy and industrial applications.

Pokhrel, Nabaraj [ORNL] (ORCID:0000000328283076)↗

Unveiling the nature of Ga-based chalcogenides for electrical switching selectors

Three-dimensional phase-change memory with stackable crossbar architecture is a promising technology to meet the urgent demands for high-density storage and rapid information processing in the era of explosive data growth. The performance depends strongly on the properties of ovonic threshold switching (OTS) selectors, which control the on/off states of memory units. Amorphous GaS serves as an outstanding OTS material, distinguished by its sizable mobility gap and high crystallization temperature, while the underlying mechanism continues to be inadequately comprehended. Here, in this work, we systematically studied the structural and electronic properties of amorphous Ga-X (X = S/Se/Te) using first-principles calculations. The results show that Ga atoms adopt tetrahedral motifs, while S/Se/Te atoms predominantly exhibit the structure of a distorted triangular pyramid. This structural arrangement is ascribed to the substantial dative bonds formed by the lone-pair electrons of the anions and the vacant sp3 orbitals around Ga atoms. Large mobility gaps (e.g., GaS: 2.43 eV, GaSe: 1.76 eV, GaTe: 1.26 eV) and distinct mid-gap states (e.g., ∼0.66 eV above valence band tail) ensure that these three chalcogenide glasses can be switched on under an external electric field while effectively suppressing leakage current without a bias, and the defect electronic states originate from short, robust Ga-Ga bonds due to the formation of distorted chain-like local structures. Our research elucidates the mechanisms of amorphous Ga-X as OTS materials, enriching the spectrum of electrical switching selectors by incorporating III-VI chalcogenides. This inclusion offers novel opportunities for the refinement and optimization of high-density integrated memory systems.

36 MATERIALS SCIENCE↗

Chemical bond and phase stability of Ga-doped Sm2Fe17Cx magnet

Sm2Fe17C3 phase (2:17) is metastable and exhibits excellent intrinsic hard magnetic properties. Doping elements such as Ga facilitate the formation of a single-phase 2:17 structure in arc-melted Sm2Fe17Cx alloys, which opens a promising route for fabricating fully dense bulk Sm2Fe17Cx magnets via high-temperature techniques such as melting and sintering. First-principles electronic structure calculation indicates that Ga prefers to partially replace Fe at the 9d and 18h crystallographic sites in Sm2Fe17C3 and Sm2Fe17, respectively. This difference in site preference is attributed to the distinct chemical environments surrounding the Fe atoms in the two compounds. Ga substitution favors the Sm–Ga bonding formation while avoiding Ga–C interactions. Doped Ga atoms result in more negative formation energy in Sm2(Fe, Ga)17C3, indicating improved structural stability. Crystal Orbital Hamilton Population analysis reveals that carbon insertion weakens the bonding of Sm-Fe (18h) and Sm-Fe (18f) in Sm2Fe17C3. Ga doping facilitates electron redistribution across chemical bonds, thereby reinforcing Fe(18h)–Sm and Fe(18f)–Sm interactions and stabilizing the carbon-centered octahedral local structure. This synergistic effect contributes significantly to the observed enhancement in phase stability of Sm2(Fe, Ga)17Cx. These findings suggest that chemical bond engineering through the selective doping of Ga can enhance phase stability and facilitate the synthesis of Sm2Fe17C3, providing a viable strategy for developing advanced magnets.

Liu, Xubo [Critical Materials Innovation Hub, Divi↗

Facet-Dependent Hydrogen Evolution Reaction on M 2 P (M = Ni, Co, Fe) Single Crystals

Transition-metal phosphides (MPs) are promising earth-abundant catalysts for hydrogen evolution reactions (HERs) due to their remarkable activity and stability. To further improve their properties, facet control is a key strategy. The growth of shape-selected nanoparticles may substantially enhance electrocatalytic activity, but this approach requires fundamental studies of facet-specific catalytic properties. There are only a few reports on the facet effects of MPs, which leads to a limited understanding of the activity of each facet and hampers catalyst design. Here, in this study, we grew large hexagonal-prism-shaped single crystals of three representative M 2 P (M = Ni, Co, and Fe) catalysts using metal flux routes. Two facets of M 2 P single crystals were tested to study facet-dependent HER activities, and it was consistently demonstrated that for all M 2 P crystals, a tip facet [(0001) for Ni 2 P/Fe 2 P and (010) for Co 2 P] had a higher activity than the side facet [(101̅0) for Ni 2 P/Fe 2 P and (100) for Co 2 P]. HER activity between the same facet elucidated the activity ordered between different transition metals as Fe 2 P > Co 2 P > Ni 2 P under low-potential regions. At high applied potentials, this trend is reversed due to the differences in Tafel slopes, with Ni 2 P becoming the most active catalyst, such that the activity of the (0001) facet of Ni 2 P approaches that of Pt. The calculated surface density of states (DOS) of each facet and its local curvature were found to be a useful descriptor for the activity trends among different transition metals of the same facets.

Co2P↗

Enhancing stability, magnetic anisotropy, and coercivity of manganese aluminum: Machine learning, ab initio , and micromagnetic modeling

The binary manganese aluminum (MnAl) alloy with L⁢1 0 crystal structure is a promising rare earth (RE) element-free permanent magnetic material because of its exceptional magnetic properties. However, experimentally synthesizing it in a stable bulk form is extremely challenging. Here, in this study, an alternative method of stabilizing the material, a pathway for experimental synthesis and validation, is proposed and theoretically verified. This is done by partially substituting Mn and Al sites with Fe and Ni and identifying its enhanced phase stability, saturation magnetization density, magnetic anisotropy, and coercivity from density functional theory (DFT), machine learning (ML) crystal graph convolution neural network (CGCNN), and micro-magnetic modeling. When considering a fixed 50% Ni, the magnetic anisotropy increases with the increasing Fe content but decreases the formation energy. The calculated formation energies, elastic constants, and phonon frequencies demonstrate that the binary and quaternary compositions are stable. Most importantly, in 50% Fe and Ni-substituted-equiatomic phase, magnetic anisotropy constants and saturation magnetization density increase by 56% and 23% as compared to the MnAl. Further, the coercivity of the equiatomic phase predicted with micro-magnetic modeling is higher by 17% than the parent compound.

Bhandari, Churna [Ames National Laboratory, and Io↗

Identifying materials-level sources of performance variation in superconducting transmon qubits

The Superconducting Quantum Materials and Systems Center, a U. S. Department of Energy National Quantum Information Science Research Center, has conducted a comprehensive and coordinated study using superconducting transmon qubit chips with known performance metrics to identify the underlying materials-level sources of device-to-device performance variation. Following qubit coherence measurements, these qubits of varying base superconducting metals and substrates have been examined with various non-destructive and invasive material characterization techniques at Northwestern University, Ames National Laboratory, and Fermilab as part of a blind study. We find trends in variations of the depth of the etched substrate trench, the thickness of the surface oxide, and the geometry of the sidewall, which when combined, lead to correlations with the T1 lifetime across different qubits on the same chip. In addition, we provide a list of features that varied from device to device, for which the impact on performance requires further studies. Finally, we identify two low-temperature characterization techniques that may potentially serve as proxy tools for qubit measurements. These insights provide materials-oriented solutions to not only reduce performance variations across neighboring devices but also to engineer and fabricate devices with optimal geometries to achieve performance metrics beyond the state-of-the-art values.

Murthy, Akshay A. [Fermilab] (ORCID:00000001767768↗

In Silico Design of Methyl-Driven Overhauser Dynamic Nuclear Polarization Agents

Overhauser effect (OE) dynamic nuclear polarization (DNP) has drawn attention owing to its enhanced performance at ultrahigh magnetic fields. The lack of design principles has, nevertheless, limited the development of OE polarizing agents when compared to those used for cross-effect DNP. Here, we measured the 19 F OE DNP performance of a series of CF 3 -functionalized Blatter-type radicals. Using density functional theory calculations, we accurately predict the methyl-driven OE performance, paving the way for computer-aided design of optimized OE DNP polarizing agents.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Defect-induced displacement of topological surface state in quantum magnet MnBi2Te4

The topological magnet MnBi2⁢Te4 (MBT), with gapped topological surface state, is an attractive platform for realizing quantum anomalous Hall and axion insulator states. However, the experimentally observed surface state gaps fail to meet theoretical predictions, although the exact mechanism behind the gap suppression has been debated. Recent theoretical studies suggest that intrinsic antisite defects push the topological surface state away from the MBT surface, closing its gap and making it less accessible to scanning probe experiments. Here, we report on the local effect of defects on the MBT surface states and demonstrate that high defect concentrations lead to a displacement of the surface states well into the MBT crystal, validating the theorized mechanism. The local and global influence of antisite defects on the topological surface states are studied with samples of varying defect densities by combining scanning tunneling microscopy, angle-resolved photoemission spectroscopy, and density functional theory. Our findings identify a combination of increased defect density and reduced defect spacing as the primary factors underlying the displacement of the surface states and suppression of surface gap, guiding further development of topological quantum materials.

Lupke, Felix [Carnegie Mellon University (CMU)]↗

Coexisting paramagnetic spins and long-range magnetic order in Ba4⁢(Ru0.92⁢Ir0.08)3⁢O10

We investigate the effect of dilute Ir substitution on the magnetism of the trimer-based ruthenate Ba4⁢Ru3⁢O10 using neutron diffraction, magnetic susceptibility measurements, first-principles calculations, and atomistic simulations. Neutron diffraction shows that Ir doping preserves the zigzag antiferromagnetic structure and the ordered-moment magnitude of the parent compound, in which the moments reside exclusively on the two outer Ru(2) sites of each Ru3⁢O12 trimer, while the central Ru(1) site remains nonmagnetic. The Néel temperature is reduced from ∼105 to 84.0(1) K upon 8% Ir substitution, while magnetic susceptibility reveals a pronounced low-temperature Curie-like upturn, indicating the coexistence of paramagnetic spins with long-range antiferromagnetic order. Density-functional calculations show that Ir preferentially occupies the central Ru(1) site, which disrupts the exchange pathways of the affected Ru3⁢O12 trimer state. Atomistic simulations incorporating this paramagnetic dilution reproduce the suppressed ordering temperature and the coexistence of ordered and paramagnetic components.

Islam, Farhan [Ames Laboratory]↗