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At least 307 records · Page 17

Hollow-cathode chemical vapor deposition of thick, low-stress diamond-like carbon films

A radio-frequency (RF), hollow-cathode plasma source with confining magnetic field is described for the chemical vapor deposition of thick ( > 10 µm), amorphous diamond-like carbon ablator films for inertial confinement fusion applications. Plasma is characterized by optical emission spectroscopy, while properties of the resultant films are measured by a combination of profilometry, Rutherford backscattering spectrometry, elastic recoil detection analysis, X-ray diffraction, Raman spectroscopy, and atomic force microscopy. The dependence of the deposition rate, film density, elemental composition, self-bias and residual stress is reported as a function of RF power. Higher density films were found when using Ar plasma, than N 2 or H 2 plasma. The coatings produced are x-ray amorphous, exhibit low compressive stress ( ~ 100 MPa), high density ( < 1.7 g/cm 3 ), hydrogen content of ~ 30 at.%, and a low average roughness of 0.75 nm. Finally, applications of these films as tunable-density ablators for inertial confinement fusion experiments are discussed.

36 MATERIALS SCIENCE↗

Component innovations for lower cost mechanical vapor compression

Despite significant capital and operating costs, mechanical vapor compression (MVC) remains the preferred technology for challenging brine concentration applications. Here, this work seeks to assess the dependence of MVC costs on feedwater salinity and desired water recovery and to quantify the value of improved component performance or reduced component costs for reducing the levelized cost of water (LCOW) of MVC. We built a cost optimization model coupling thermophysical, heat and mass transfer, and technoeconomic models to optimize and identify low cost MVC system designs as a function of feedwater salinity and water recovery. The LCOW ranges over 3.6 to 6.1 $\$$/m 3 for seawater feed salinities of 25–150 g/kg and water recoveries of 40–80 %. We then perform sensitivity analysis on parameter inputs to isolate irreducible costs and determine high value component innovation targets. The LCOW was most sensitive to evaporator material costs and performance, including the overall heat transfer coefficient in the evaporator. Process and material innovations such as polymer-composite evaporator tubes that reduce evaporator costs by 25 % without reducing heat transfer performance by more than 10 % would result in MVC cost reductions of 8 %.

42 ENGINEERING↗

Design of Planarizing Growth Conditions on Unpolished and Faceted (100)-Oriented GaAs Substrates Using Hydride Vapor Phase Epitaxy

Here we performed a design of experiments (DoE) analysis to determine the effect of various growth parameters on in situ planarizing overgrowth of rough substrates using hydride vapor phase epitaxy (HVPE). We used two types of rough (100)-oriented GaAs substrates to compare the effect of the initial morphology on the epitaxial growth behavior: an irregular, as-cut surface resultant from cutting the wafer from a GaAs boule and a regularly faceted surface produced by controlled spalling. The DoE analysis identified trends in the overgrowth behavior with changing growth conditions, and we used these trends to design favorable planarization growth conditions for each surface type. These favorable conditions enabled full planarization of a spalled surface with >2.5 um facet height within 10.8 min of growth. The root mean squared (RMS) surface roughness of the resulting (100) surface was 24.5 nm over a 286 um x 215 um area. Our results show that planarization growth by HVPE is a promising technique to enable device growth directly on rough substrates, and the trends revealed through DoE analysis indicate a path toward further optimization of planarization growth conditions for as-cut and spalled surfaces.

14 SOLAR ENERGY↗

Halide Vapor Phase Epitaxy of Ge from an Elemental Source

Halide vapor phase epitaxy shows promise for low-cost photovoltaic device manufacturing because of its high growth rates and lower cost elemental precursors but previously has not been used to deposit epitaxial Ge. Here, we demonstrate Ge deposition by generating GeCl 2 in situ from solid Ge and HCl in a N 2 ambient. To achieve Ge growth, we inject AsH 3 and PH 3 as sources of active hydrogen to the growth surface to create a driving force for growth. We do not observe Ge growth unless a supply of hydrogen is added, consistent with thermodynamic calculations. Furthermore, we show the hydrogen source must crack readily on the substrate surface to enable growth; relatively stable sources such as H 2 do not cause growth. Unintentional group V doping is one drawback of using AsH 3 and PH 3 to drive the Ge reaction. We observed As or P concentrations in the Ge films ranging from 4 x 10 17 to 1 x 10 18 atoms/cm 3 , concentrations that can drastically influence device characteristics. However, we note there are numerous other "helper molecule" options that can provide active hydrogen without doping or etching the material. This work provides a path forward for Ge deposition for optoelectronic devices from an elemental source.

14 SOLAR ENERGY↗

Chemical Vapor Transport Route toward Black Phosphorus Nanobelts and Nanoribbons

Chemical vapor transport (CVT) method is widely used for bulk black phosphorus (BP) fabrication. In this work, we demonstrate that CVT provides a route for the fabrication of BP nanoribbons and nanobelts. This method consists of a two-step procedure, including initial BP column growth using the CVT technique, followed by ultrasonic treatment and centrifugation. The obtained nanostructures preserve BP column dimensions, forming ultralong ribbon-like structures with the length to the width aspect ratio of up to 500. Computational modeling of the growth mechanism of a BP flake is also presented in support of the observed columnar growth. Calculation of the average energy of the molecule in the asymmetric flakes shows that the growth of the structure in the zigzag direction is more energetically favorable than in the armchair direction.

36 MATERIALS SCIENCE↗

Engineering Self-Assembled Domain Asymmetry in Solvent Vapor Annealed Block Copolymer–Homopolymer Blend Films

Thin-film block copolymer (BCP) self-assembly is a powerful approach to generate highly uniform nanopatterns across large areas, yet the symmetries of these nanopatterns are constrained by the relative volume occupied by each polymer block. Here, we present a conceptually new approach to circumvent this limitation by combining homopolymer (HP) blending with solvent vapor annealing (SVA), demonstrated here for ternary blends of a near-symmetric BCP with athermal, low molar mass HPs. Screening of BCP–HP interactions by a weakly selective solvent promotes entropically driven delocalization of HP throughout both blocks and enables assembly of metastable lamellae for volume fractions as high as 0.78. Subsequent brief thermal annealing induces HPs to withdraw to their enthalpically favored domains, sharpening domain interfaces on a time scale much shorter than pattern coarsening. This renders lamellar nanopatterns with tunable widths that can be transferred to other materials with high fidelity. Furthermore, the persistence of the metastable asymmetric lamellae upon thermal annealing is sensitive to film confinement, as they are preserved in submonolayer films but transition to horizontal cylinders in films more than one monolayer thick. SVA using a strongly selective solvent results in assembled morphologies aligned closely with expectations based on the total polymer blend composition, underscoring the key role of BCP–HP interactions in dictating domain asymmetry. Overall, this work details important principles for using SVA to mediate BCP–HP interactions in thin films, thereby presenting opportunities to engineer pathways for the assembly of well-ordered nanopatterns with designer feature asymmetry for lithographic or nanotexturing applications.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Phase-Selective Synthesis of Rhombohedral WS 2 Multilayers by Confined-Space Hybrid Metal–Organic Chemical Vapor Deposition

Rhombohedral polytype transition metal dichalcogenide (TMDC) multilayers exhibit non-centrosymmetric interlayer stacking, which yields intriguing properties such as ferroelectricity, a large second-order susceptibility coefficient χ (2) , giant valley coherence, and a bulk photovoltaic effect. These properties have spurred significant interest in developing phase-selective growth methods for multilayer rhombohedral TMDC films. Here, in this study, we report a confined-space, hybrid metal–organic chemical vapor deposition method that preferentially grows 3R-WS 2 multilayer films with thickness up to 130 nm. We confirm the 3R stacking structure via polarization-resolved second-harmonic generation characterization and the 3-fold symmetry revealed by anisotropic H 2 O 2 etching. The multilayer 3R WS 2 shows a dendritic morphology, which is indicative of diffusion-limited growth. Multilayer regions with large, stepped terraces enable layer-resolved evaluation of the optical properties of 3R-WS 2 via Raman, photoluminescence, and differential reflectance spectroscopy. These measurements confirm the interfacial quality and suggest ferroelectric modification of the exciton energies.

3R-WS2↗

Overcoming the Conductance versus Crossover Trade-off in State-of-the-Art Proton Exchange Fuel-Cell Membranes by Incorporating Atomically Thin Chemical Vapor Deposition Graphene

Permeance–selectivity trade-offs are inherent to polymeric membranes. In fuel cells, thinner proton exchange membranes (PEMs) could enable higher proton conductance and increased power density with lower area-specific resistance (ASR), smaller ohmic losses, and lower ionomer cost. However, reducing thickness is accompanied by an increase in undesired species crossover harming performance and long-term efficiency. Here, we show that incorporating atomically thin monolayer graphene synthesized via scalable chemical vapor deposition (CVD) and tunable defect density into PEMs (Nafion, ~5–25 μm thick) can allow for reduced H 2 crossover (~34–78% of Nafion of a similar thickness) while maintaining adequate areal proton conductance for applications (>4 S cm –2 ). In contrast to most prior work using >50 μm symmetric Nafion sandwich structures, we elucidate the interplay of graphene defect density and Nafion proton transport resistance on the performance of Nafion|graphene composite membranes and find high-quality low-defect density CVD graphene (G) supported on Nafion 211 (~25 μm); i.e., N211|G has a high areal proton conductance (~6.1 S cm –2 ) and the lowest H 2 crossover (~0.7 mA cm –2 ). Fully functional centimeter-scale N211|G fuel-cell membranes demonstrate performance comparable to that of state-of-the-art Nafion N211 at room temperature as well as standard operating conditions (~80 °C, ~150–250 kPa-abs) with H 2 /air (power density ~0.57–0.63 W cm –2 ) and H 2 /O 2 feed (power density ~1.4–1.62 W cm –2 ) and markedly reduced H 2 crossover (~53–57%).

25 ENERGY STORAGE↗

Temperature-Dependent Phase Stable Hybrid Halide Perovskite Films by Chemical Vapor Deposition

Methylammonium lead iodide (MAPbI 3-x Cl x ) thin films were synthesized using chemical vapor deposition. Temperature-dependent grazing incidence synchrotron-based X-ray diffraction measurements confirm that the structure of MAP-bI 3-x Cl x , where Cl acts more like a dopant, remains throughout in the tetragonal phase in the temperature range of 20-300 K. Here these studies are further correlated with temperature-dependent photo-luminescence (PL) studies. The PL peak energy monotonically increases with temperature, suggestive of a single-phase behavior. Resistance measurements conducted as a function of temperature show an absence of inflection points, suggesting uniformity in its phase. Between 200 and 325 K, the resistance remains a constant.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Catalysis of the Oxygen-Evolution Reaction in 1.0 M Sulfuric Acid by Manganese Antimonate Films Synthesized via Chemical Vapor Deposition

Manganese antimonate (Mn y Sb 1–y O x ) electrocatalysts for the oxygen-evolution reaction (OER) were synthesized via chemical vapor deposition. Mn-rich rutile Mn 0.63 Sb 0.37 O x catalysts on fluorine-doped tin oxide (FTO) supports drove the OER for 168 h (7 days) at 10 mA cm –2 with a time-averaged overpotential of 687 ± 9 mV and with >97% Faradaic efficiency. Time-dependent anolyte composition analysis revealed the steady dissolution of Mn and Sb. Extended durability analysis confirmed that Mn-rich Mn y Sb 1–y O x materials are more active but dissolve at a faster rate than previously reported Sb-rich Mn y Sb 1–y O x alloys.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Growth of AlGaAs, AlInP, and AlGaInP by Hydride Vapor Phase Epitaxy

In this work, we demonstrate hydride vapor phase epitaxy (HVPE) of Al x Ga 1-x As, Al x In 1-x P, and Al x Ga y In 1-x-y P using an AlCl 3 precursor. We study the growth of the Al x Ga 1-x As alloy system to elucidate the effects of deposition temperature, V/III ratio, and group V precursor species on Al solid incorporation via AlCl 3 . Crucially, the presence of group V hydride at the growth front kinetically promotes the solid incorporation of Al. We use these insights to demonstrate controlled deposition of Al x Ga 1-x As, and for the first time by HVPE, Al x In 1-x P and Al x Ga y In 1-x-y P. Finally, these results create exciting implications for HVPE-grown high-efficiency III-V solar cells and devices with reduced cost.

14 SOLAR ENERGY↗

Insights into the Growth Orientation and Phase Stability of Chemical-Vapor-Deposited Two-Dimensional Hybrid Halide Perovskite Films

Chemical vapor deposition (CVD) offers a large-area, scalable, and conformal growth of perovskite thin films without the use of solvents. Low-dimensional organic–inorganic halide perovskites, with alternating layers of organic spacer groups and inorganic perovskite layers, are promising for enhancing the stability of optoelectronic devices. Moreover, their multiple quantum-well structures provide a powerful platform for tuning excitonic physics. Here, in this work, we show that the CVD process is conducive to the growth of 2D hybrid halide perovskite films. Using butylammonium (BA) and phenylethylammonium (PEA) cations, the growth parameters of BA 2 PbI 4 and PEA 2 PbI 4 and mixed halide perovskite films were first optimized. These films are characterized by well-defined grain boundaries and display characteristic absorption and emission features of the 2D quantum wells. X-ray diffraction (XRD) and a noninteger dimensionality model of the absorption spectrum provide insights into the orientation of the crystalline planes. Unlike BA 2 PbI 4 , temperature-dependent photoluminescence measurements from PEA 2 PbI 4 show a single excitonic peak throughout the temperature range from 20 to 350 K, highlighting the lack of defect states. These results further corroborate the temperature-dependent synchrotron-based XRD results. Furthermore, the nonlinear optical properties of the CVD-grown perovskite films are investigated, and a high third harmonic generation efficiency is observed.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Assembling Vertical Block Copolymer Nanopores via Solvent Vapor Annealing on Homopolymer-Functionalized Substrates

Utilizing the self-assembly of block copolymers with large Flory–Huggins interaction parameters (χ) for nanofabrication is a formidable challenge due to the attendant large surface energy differences between the blocks. This work reports a robust protocol for the fabrication of thin films with highly ordered cylindrical nanopore arrays via the self-assembly of an asymmetric poly(styrene-block-4-vinylpyridine) (PS-b-P4VP) diblock copolymer blended with a P4VP homopolymer. The desired vertical domain orientation is achieved at the air–polymer interface by controlled solvent vapor annealing (SVA) using acetone, a solvent with weak selectivity for PS over P4VP, and at the substrate interface by functionalization using a hydroxy-terminated poly(2-vinylpyridine) (P2VP-OH) homopolymer brush. In contrast, the vertical cylinder orientation is unstable during acetone SVA on substrates functionalized using hydroxy-terminated poly(methyl methacrylate) (PMMA-OH). Although PMMA exhibits more balanced interfacial energies between PS and P4VP than P2VP in the dry state, it is also swollen more selectively by acetone. We hypothesize that the nearly balanced solvent swelling of the three polymers (P2VP, P4VP, and PS) stabilizes the vertical cylinder orientation, while unbalanced swelling (PMMA > P4VP and PS) does not. Here we further characterize pore formation by addition of a P4VP homopolymer and its postassembly extraction using ethanol, revealing a narrow window of pore size tunability. Notably, minimal differences in nanopore morphologies are observed for P4VP volume fractions as high as 0.1, regardless of the P4VP molar mass. However, further increasing the P4VP volume fraction results in domain reorientation or macrophase separation when its molar mass is less than or greater than the P4VP block molar mass, respectively. Using a P4VP homopolymer that is nearly equal in length to the P4VP block enables the fabrication of well-ordered arrays of vertical, through-film nanopores with high aspect ratios (>10), small periods (<23 nm), and diameters less than 10 nm.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Chemical Vapor Transformation of Lithium Metal: Mechanism and Enhanced Stability

Constructing a stable solid electrolyte interface (SEI) with high productivity and scalability is essential for the practical application of thin Li metal anodes. Here, in this work, we report a chemical vapor transformation (CVT) strategy in which Li metal is exposed to trimethylaluminum (TMA), inducing a rapid and spontaneous surface reaction that forms a robust, multilayered SEI. In situ quartz crystal microbalance (QCM) and quadrupole mass spectrometry (QMS), combined with ex situ X-ray photoelectron spectroscopy (XPS), UV Raman spectroscopy, and density functional theory (DFT) calculations, reveal that TMA removes the native passivation layer, reacts with Li metal, and drives a coupled bulk-surface transformation involving Li–Al interdiffusion. The resulting SEI exhibits a chemically graded structure consisting of an inner Li–Al alloy and an outer amorphous carbon layer formed via demethylation and ligand-exchange pathways. This modified surface exhibits significantly enhanced stability compared to that of bare Li in electrochemical cycling using liquid and solid-state electrolytes. This work unveils a unique surface-mediated bulk transformation mechanism for lithium metal and establishes CVT as a scalable and fundamentally distinct approach for the interfacial engineering of reactive metals.

Li metal↗

Chemical Vapor Deposition-Grown Hexagonal Boron Nitride and Graphene for Tandem Dielectric Capacitive Polymer Devices

To address the low energy density of polymeric capacitors, this work explores how tandem combinations of antagonistic properties can enhance energy storage. We introduce multilayer architecture integrating chemical vapor deposition (CVD)-grown ≈2 nm hexagonal boron nitride (hBN) and graphene with ferroelectric polyvinylidene fluoride (PVDF) and linear polyetherimide (PEI) layers to suppress leakage paths, reduce loss, and promote Maxwell–Wagner–Sillars polarization. Raman spectroscopy, X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), and plasma focused ion beam (PFIB) analyses confirm robust material integration. In conclusion, for the tandem device, E BD ≈600 V/μm, while individual layers show lower values (PVDF|Graphene (Gr)|PVDF ≈ 50 V/μm and PEI|hBN|PEI ≈ 275 V/μm), yielding an overall ≈6000% enhancement and demonstrating the effectiveness of the 2D multilayer design.

Chemical vapor deposition (CVD)↗

Solutions Are the Problem: Ordered Two-Dimensional Covalent Organic Framework Films by Chemical Vapor Deposition

Covalent organic frameworks (COFs) are a promising class of crystalline polymer networks that are useful due to their high porosity, versatile functionality, and tunable architecture. Conventional solution-based methods of producing COFs are marred by slow reactions that produce powders that are difficult to process into adaptable form factors for functional applications, and there is a need for facile and fast synthesis techniques for making crystalline and ordered covalent organic framework (COF) thin films. In this work, we report a chemical vapor deposition (CVD) approach utilizing co-evaporation of two monomers onto a heated substrate to produce highly crystalline, defect-free COF films and coatings with hydrazone, imine, and ketoenamine COF linkages. Further, this all-in-one synthesis technique produces highly crystalline, 40 nm–1 μm-thick COF films on Si/SiO2 substrates in less than 30 min. Crystallinity and alignment were proven by using a combination of grazing-incidence wide-angle X-ray scattering (GIWAXS) and transmission electron microscopy (TEM), and successful conversion of the monomers to produce the target COF was supported by Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), and UV–vis measurements. Additionally, we used atomic force microscopy (AFM) to investigate the growth mechanisms of these films, showing the coalescence of triangular crystallites into a smooth film. To show the wide applicability and scope of the CVD process, we also prepared crystalline ordered COF films with imine and ketoenamine linkages. These films show potential as high-quality size exclusion membranes, catalytic platforms, and organic transistors.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗