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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 307 records · Page 17
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Development of ~25% Efficient Double Side Screen Printed Poly-Si/SiO x Passivated Contact Solar Cells

This program aims to overcome these challenges and develop high-efficiency (24-25%) double-side (DS) TOPCon solar cells by maximizing passivation on both sides while mitigating light absorption losses. To achieve this, the program will implement either thin (≤ 20 nm) homogeneous n-TOPCon on the entire front surface or selective area thick (≥ 100 nm) n-TOPCon only underneath the front metal contact with ~90% field region composed of dielectric passivated textured n-Si in between the poly-Si/metal grid. The rear side will feature ~250 nm-thick full-area planar p-TOPCon, which functions as the rear junction. Recombination and parasitic absorption losses in the front and rear TOPCon layers will be minimized by tailoring their doping profiles and thickness. Additionally, the device performance will be further enhanced through the optimization of bulk parameters, including the carrier lifetime, resistivity, and thickness of the n-type Si absorber. Finally, advanced metallization techniques, such as fine-line printing, and floating busbar or busbar-less designs, will be employed to reduce recombination, resistive, and optical losses. The program started with the development of a technology roadmap for DS-TOPCon cells to achieve target efficiency.

14 SOLAR ENERGY↗
DOE OSTI2025

2 kV Al 0.64 Ga 0.36 N-channel high electron mobility transistors with passivation and field plates

Abstract High voltage (∼2 kV) Al 0.64 Ga 0.36 N-channel high electron mobility transistors were fabricated with an on-resistance of ∼75 Ω. mm (∼21 mΩ. cm 2 ). Two field plates of variable dimensions were utilized to optimize the breakdown voltage. The breakdown voltage reached >3 kV (tool limit) before passivation however it reduced to ∼2 kV after Si 3 N 4 surface passivation and field plate deposition. The breakdown voltage and on-resistance demonstrated a strong linear correlation in a scattered plot of ∼50 measured transistors. The fabricated transistors were electrically characterized and benchmarked against the state-of-the-art high-voltage (> 1 kV) Al-rich (>40%) AlGaN-channel transistors in breakdown voltage and on-resistance, indicating significant progress.

Alam, Md Tahmidul (ORCID:000900086556839X)↗
DOE OSTI2022

SDSS-IV MaNGA: How the Stellar Populations of Passive Central Galaxies Depend on Stellar and Halo Mass

We analyze spatially resolved and co-added SDSS-IV MaNGA spectra with signal-to-noise ratio ~100 from 2200 passive central galaxies (z ~ 0.05) to understand how central galaxy assembly depends on stellar mass (M*) and halo mass (M h ). We control for systematic errors in M h by employing a new group catalog from Tinker and the widely used Yang et al. catalog. At fixed M*, the strengths of several stellar absorption features vary systematically with M h . Completely model-free, this is one of the first indications that the stellar populations of centrals with identical M* are affected by the properties of their host halos. To interpret these variations, we applied full spectral fitting with the code alf. At fixed M*, centrals in more massive halos are older, show lower [Fe/H], and have higher [Mg/Fe] with 3.5σ confidence. We conclude that halos not only dictate how much M* galaxies assemble but also modulate their chemical enrichment histories. Turning to our analysis at fixed M h , high-M* centrals are older, show lower [Fe/H], and have higher [Mg/Fe] for M h > 10 12 h –1 M⊙ with confidence >4σ. While massive passive galaxies are thought to form early and rapidly, our results are among the first to distinguish these trends at fixed M h . They suggest that high-M* centrals experienced unique early formation histories, either through enhanced collapse and gas fueling or because their halos were early forming and highly concentrated, a possible signal of galaxy assembly bias.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2021

Revisiting adiabatic fraction estimations in cumulus clouds: high-resolution simulations with a passive tracer

The process of mixing in warm convective clouds and its effects on microphysics are crucial for an accurate description of cloud fields, weather, and climate. Still, they remain open questions in the field of cloud physics. Adiabatic regions in the cloud could be considered non-mixed areas and therefore serve as an important reference to mixing. For this reason, the adiabatic fraction (AF) is an important parameter that estimates the mixing level in the cloud in a simple way. Here, we test different methods of AF calculations using high-resolution (10 m) simulations of isolated warm cumulus clouds. The calculated AFs are compared with a normalized concentration of a passive tracer, which is a measure of dilution by mixing. This comparison enables the examination of how well the AF parameter can determine mixing effects and the estimation of the accuracy of different approaches used to calculate it. Comparison of three different methods to derive AF, with the passive tracer, shows that one method is much more robust than the others. Moreover, this method's equation structure also allows for the isolation of different assumptions that are often practiced when calculating AF such as vertical profiles, cloud-base height, and the linearity of AF with height. The use of a detailed spectral bin microphysics scheme allows an accurate description of the supersaturation field and demonstrates that the accuracy of the saturation adjustment assumption depends on aerosol concentration, leading to an underestimation of AF in pristine environments.

54 ENVIRONMENTAL SCIENCES↗
DOE OSTI2024

Dynamic performance of a passively self-adjusting floating wind farm layout to increase the annual energy production

One of the main differences between floating offshore wind turbines (FOWTs) and fixed-bottom turbines is the angular and translational motions of FOWTs. When it comes to planning a floating wind farm (FWF), the translational motions introduce an additional layer of complexity to the FWF layout. The ability of a FOWT to relocate its position represents an opportunity to mitigate wake losses within an FWF. By passively relocating downwind turbines out of the wake generated by upwind turbines, we can reduce wake-induced energy losses and enhance overall energy production. The translational movements of FOWTs are governed by the mooring system attached to it. The way a FOWT relocates its position changes if the design of the mooring system attached to it changes. Additionally, the translational motion of a FOWT attached to a given mooring system is different for different wind directions. Hence, we can tailor a mooring system design for a FOWT to passively control its motions according to the wind direction. In this work, we present a new self-adjusting FWF layout design and assess its performance using both static and dynamic methods. The results show that relocating the FOWTs in an FWF can increase the energy production by 3 % using a steady-state wake model and 1.4 % using a dynamic wake model at a wind speed of 10 m s -1 . Moreover, we compare the fatigue and ultimate loads of the mooring systems of the self-adjusting FWF layout design to the mooring systems in a current state-of-the-art FWF baseline design. The comparison shows that with smaller mooring system diameters, the self-adjusting FWF design has similar fatigue damage compared to the baseline design with bigger mooring system diameters at rated wind speed. Finally, the ultimate loads on the mooring systems of the self-adjusting FWF design are lower than those on the mooring systems of the baseline design.

17 WIND ENERGY↗
DOE OSTI2021

Study of passively stable, fully detached divertor plasma regimes attained in innovative long-legged divertor configurations

Numerical modeling of divertor configurations with radially or vertically extended, tightly baffled, outer divertor legs has demonstrated the existence of a passively-stable fully detached divertor regime. In the simulations, long-legged divertors provide up to an order-of- magnitude increase in peak power handling capability compared to conventional divertors. The key physics for attaining the passively stable, fully detached regime in these simulations involves the interplay of strong convective plasma transport to the divertor leg outer sidewall, confinement of neutral gas in the divertor volume, geometric effects including a secondary X-point, and atomic radiation. New analysis shows that in this regime the detachment front location is set by the balance between the power entering the divertor leg and the losses to the walls of the divertor channel. Correspondingly, the maximum power that can be accommodated by the divertor, while still staying detached, increases with the poloidal length of the leg. The detached regime access window in terms of input power, density and impurity seeding concentration varies quantitatively depending on divertor geometry and modeling assumptions most specifically, cross-field transport to the side walls.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2020

Passive bias temperature compensation circuit module

A passive bias temperature compensation module for silicon photomultiplier, avalanche photodiodes and similar photodetectors that possess a moderately linear temperature coefficient of gain and that may be compensated by varying an applied bias voltage. The module includes an electrical circuit and a method for determining component values to provide a constant voltage source to stabilize the gain of one or more photodetector devices. A temperature sensor in the module is held in close thermal contact with the photodetector and a filter capacitor is electrically close to the photodetector. The module is based on the concept of temperature sensitive voltage division which is applicable to situations in which large numbers of photodetectors must be gain-compensated for temperature variations over a wide range while maintaining excellent gain matching. The passive bias temperature compensation method enables multiple photodetectors to share a single constant voltage supply without loss of matching performance.

42 ENGINEERING↗
DOE OSTI2021

Passivating window and capping layer for photoelectrochemical cells

An aspect of the present disclosure is a photoelectrochemical device that includes a first cell that includes a first semiconductor alloy, a capping layer that includes a second semiconductor alloy, and a passivating layer that includes a third semiconductor alloy, where the passivating layer is positioned between the first cell and the capping layer, and at least a portion of the capping layer is configured to be in direct contact with an electrolyte.

Deutsch, Todd Gregory↗
DOE OSTI2021

Passive method to measure strength of turbulence

Disclosed is a method to passively measure and calculate the strength of turbulence via the index of refraction structure constant Cn2 from video imagery gathered by an imaging device, such as a video camera. Processing may occur with any type computing device utilizing a processor executing machine executable code stored on memory. This method significantly simplifies instrumentation requirements, reduces cost, and provides rapid data output. This method combines an angle of arrival methodology, which provides scale factors, with a new spatial/temporal frequency domain method. As part of the development process, video imagery from high speed cameras was collected and analyzed. The data was decimated to video rates such that statistics could be computed and used to confirm that this passive method accurately characterizes the atmospheric turbulence. Cn2 accuracy from this method compared well with scintillometer data through two full orders of magnitude and more capability is expected beyond this verification.

O'Neill, Mary Morabito↗
DOE OSTI2021

Metal-based passivation-assisted plasma etching of III-v semiconductors

According to one embodiment, a method includes performing a plasma etching process on a masked III-V semiconductor, and forming a passivation layer on etched portions of the III-V semiconductor. The passivation layer includes at least one of a group III element and/or a metal from the following: Ni, Cr, W, Mo, Pt, Pd, Mg, Ti, Zr, Hf, Y, Ta, and Sc.

Harrison, Sara Elizabeth↗
DOE OSTI2023

Intelligent driving passive pedal control

A method for assignment of vehicle control includes receiving route data indicating a route between a starting location of a vehicle and a destination location, and determining an optimal vehicle configuration for the route based on a target vehicle speed and a hybrid torque split. The method further includes receiving a driver requested torque value and determining a passive pedal torque value based on the route data and vehicle powertrain data. The method further includes selectively assigning control of the vehicle to a vehicle system or to a driver of the vehicle based on the driver requested torque value and the passive pedal torque value.

Aggoune, Karim↗
DOE OSTI2023

Atomic layer deposition with passivation treatment

A method includes: 1) performing an atomic layer deposition cycle including (a) introducing precursors into a deposition chamber housing a substrate to deposit a material on the substrate; and (b) introducing a passivation gas into the deposition chamber to passivate a surface of the material; and 2) repeating 1) a plurality of times to form a film of the material.

Prinz, Friedrich B.↗
DOE OSTI2024

Engineered nanostructured passivated contacts and method of making the same

The present disclosure relates to a passivating contact that includes a dielectric layer constructed of a first material, an intervening layer constructed of a second material, and a substrate constructed of a semiconductor, where the dielectric layer is positioned between the substrate and the intervening layer, the dielectric layer has a first thickness, and the substrate has a second thickness. The passivating contact also includes a plurality of conductive pathways that include the second material and pass through the first thickness, the second material penetrates into the second thickness forming a plurality of penetrating regions within the substrate, and the plurality of conductive pathways are configured to allow current to pass through the first thickness.

Stradins, Pauls↗
DOE OSTI2024

Diamond-like carbon coating for passive and active electronics

Systems and methods for building passive and active electronics with diamond-like carbon (DLC) coatings are provided herein. DLC may be layered upon substrates to form various components of electronic devices. Passive components such as resistors, capacitors, and inductors may be built using DLC as a dielectric or as an insulating layer. Active components such as diodes and transistors may be built with the DLC acting substantially like a semiconductor. The amount of sp 2 and sp 3 bonded carbon atoms may be varied to modify the properties of the DLC for various electronic components.

Timpson, Erik Joseph↗
DOE OSTI2020

Effect of Surface Texture on Pinhole Formation in SiO x -Based Passivated Contacts for High-Performance Silicon Solar Cells

High-efficiency silicon solar cells rely on some form of passivating contact structure to reduce recombination losses at the crystalline silicon surface and losses at the metal/Si contact interface. One such structure is polycrystalline silicon (poly-Si) on oxide, where heavily doped poly-Si is deposited on a SiO x layer grown directly on the crystalline silicon (c-Si) wafer. Depending on the thickness of the SiO x layer, the charge carriers can cross this layer by tunneling (<2 nm SiO x thickness) or by direct conduction through disruptions in the SiOx, often referred to as pinholes, in thicker SiO x layers (>2 nm). In this work, we study structures with tunneling- or pinhole-like SiO x contacts grown on pyramidally textured c-Si wafers and expose variations in the SiOx layer properties related to surface morphology using electron-beam-induced current (EBIC) imaging. Using EBIC, we identify and mark regions with potential pinholes in the SiO x layer. We further perform high-resolution transmission electron microscopy on the same areas, thus allowing us to directly correlate locally enhanced carrier collection with variations in the structure of the SiO x layer. Our results show that the pinholes in the SiO x layer preferentially form in different locations based on the annealing conditions used to form the device. With greater understanding of these processes and by controlling the surface texture geometry, there is potential to control the size and spatial distribution of oxide disruptions in silicon solar cells with poly-Si on oxide-type contacts; usually, this is a random phenomenon on polished or planar surfaces. Such control will enable us to consistently produce high-efficiency devices with low recombination currents and low junction resistances using this contact structure.

14 SOLAR ENERGY↗
DOE OSTI2024

Colloidal InAs Quantum Dot-Based Infrared Optoelectronics Enabled by Universal Dual-Ligand Passivation

Solution-processed low-bandgap semiconductors are crucial to next-generation infrared (IR) detection for various applications, such as autonomous driving, virtual reality, recognitions, and quantum communications. In particular, III–V group colloidal quantum dots (CQDs) are interesting as nontoxic bandgap-tunable materials and suitable for IR absorbers; however, the device performance is still lower than that of Pb-based devices. Herein, a universal surface-passivation method of InAs CQDs enabled by intermediate phase transfer (IPT), a preliminary process that exchanges native ligands with aromatic ligands on the CQD surface is presented. IPT yields highly stable CQD ink. In particular, desirable surface ligands with various reactivities can be obtained by dispersing them in green solvents. Furthermore, CQD near-infrared (NIR) photodetectors are demonstrated using solution processes. Careful surface ligand control via IPT is revealed that enables the modulation of surface-mediated photomultiplication, resulting in a notable gain control up to ≈10 with a fast rise/fall response time (≈12/36 ns). Considering the figure of merit (FOM), EQE versus response time (or –3 dB bandwidth), the optimal CQD photodiode yields one of the highest FOMs among all previously reported solution-processed nontoxic semiconductors comprising organics, perovskites, and CQDs in the NIR wavelength range.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Spatiotemporal Changes in Trace Metal Bioavailability in the Sediment Pore water of a Constructed Wetland Using Passive Pore water Samplers

Sediments in aquatic systems often act as a major sink for contaminants. Diffusive gradient in thin films (DGTs) and in situ equilibrium dialysis samplers (peepers) are two major in situ pore water sampling devices that overcome the problems associated with conventional pore water sampling methods. In the present study, DGTs and peepers were used to study the spatial and seasonal effects (cool months, October–February; warm months, May–September) on metal bioavailability in the H‐02 constructed wetland and the sink versus source role of the sediments by calculating the metal resupply capacity. Data showed similar seasonal trends in metal concentrations using passive samplers, peepers, and DGTs. Pooled Cu and Zn concentrations measured using DGTs were lower in warm months (1.67 ± 1.50 and 2.62 ± 0.68 μg L –1 , respectively, p < 0.001) versus in cool months (2.12 ± 0.65 and 5.58 ± 1.33 μg L –1 , respectively, p < 0.001; mean ± 95% confidence interval). Sulfate (SO 4 2− ) concentrations were significantly (p = 0.0139) lower in warm months (averaged at 0.22 ± 0.05 mg L –1 ) compared to in cool months (0.16 ± 0.05 mg L –1 ). The increase in SO 4 2− concentration is an indicator of the lower activity of sulfate‐reducing bacteria, which need SO 4 2− during anaerobic respiration, in which SO 4 2− is reduced to sulfide (S 2– ) that forms insoluble salts with Cu and Zn, which could partially explain the higher bioavailability of these metals in the cool season. Metal resupply capacity of the sediments was mostly <0.2 for Cu and Zn. Taken together, the H0‐2 wetland sediments mostly acted as a sink to both Cu and Zn over the course of the present study. Environ Toxicol Chem 2023;42:2726–2736. © 2023 The Authors. Environmental Toxicology and Chemistry published by Wiley Periodicals LLC on behalf of SETAC.

54 ENVIRONMENTAL SCIENCES↗
DOE OSTI2021

Wide-Gap Perovskite via Synergetic Surface Passivation and Its Application toward Efficient Stacked Tandem Photovoltaics

Superior bandgap tunability enables solution-processed halide perovskite a promising candidate for multi-junction photovoltaics (PVs). Particularly, optically coupling wide-gap perovskite by stacking with commercially available PVs such as silicon and CIGS (also known as 4-terminal tandem) simplifies the technology transfer process, and further advances the commercialization potential of perovskite technology. However, compared with matured PV materials and the phase-pure FAPbI 3 , wide-gap perovskite still suffers from huge voltage deficits. Here, the authors take advantage of the synergetic effect behind a sequential fluoride and organic ammonium salt surface passivation strategy to control non-radiative energy losses, and obtained a 17.7% efficiency in infrared-transparent wide-gap perovskite solar cells (21.1% for opaque device), and achieved efficiencies of over 25% when stacked with commercial Si and CIGS products with original PCEs of 18–20% under a 4-terminal working condition.

36 MATERIALS SCIENCE↗