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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 307 records · Page 17
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

The 4D Camera: An 87 kHz Direct Electron Detector for Scanning/Transmission Electron Microscopy

We describe the development, operation, and application of the 4D Camera—a 576 by 576 pixel active pixel sensor for scanning/transmission electron microscopy which operates at 87,000 Hz. The detector generates data at ~480 Gbit/s which is captured by dedicated receiver computers with a parallelized software infrastructure that has been implemented to process the resulting 10–700 Gigabyte-sized raw datasets. The back illuminated detector provides the ability to detect single electron events at accelerating voltages from 30 to 300 kV. Through electron counting, the resulting sparse data sets are reduced in size by 10--300× compared to the raw data, and open-source sparsity-based processing algorithms offer rapid data analysis. The high frame rate allows for large and complex scanning diffraction experiments to be accomplished with typical scanning transmission electron microscopy scanning parameters.

47 OTHER INSTRUMENTATION↗
DOE OSTI2026

Do We Really Need All That Data: From Data to Agency in Automated Microscopy

Microscopy is entering an era of automated laboratories and AI-enabled instruments, often justified by a simple narrative of automating experiments to collect more data and train better models. In this work, we argue that, for microscopy, this framing is incomplete and can be counterproductive.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2023

Injection mechanisms in a III -nitride light-emitting diode as seen by self-emissive electron microscopy

Here, we report on the investigation of an electrically biased high efficiency green III-nitride light-emitting diode (LED) by electron emission microscopy (EEM) using a low-energy electron microscope (LEEM). The surface of the LED was activated to negative electron affinity via deposition of a submonolayer of Cs. With the illumination column of the LEEM turned off, upon electrical injection of the LED, we directly image the hot electrons generated by eeh Auger-Meitner nonradiative processes that diffuse through the top p-Ga N layer and emit out the surface of the biased LED. By determining the source of emitted electrons using complementary electron emission spectroscopy measurements, EEM allows us to effectively map the carrier density within the LED. Using EEM, we observed nonelectron emitting regions with a density of approximately 3 × 10 8 cm -2 , identified as V-shaped defects (V-defects). This is confirmed through the corresponding dark spots of panchromatic cathodoluminescence measurements of the same sample and by plan-view transmission electron microscopy. The absence of electron emission at the sidewall of the V-defects can be attributed to several factors, including reduced carrier density in the sidewall quantum wells due to carriers traveling fast through the semipolar sidewalls before being injected into the planar quantum wells, the reduced population of hot electrons surviving diffusion through the thicker p-GaN filling in the V-defect before emission onto vacuum, and a smaller Auger-Meitner coefficient for the low In content semipolar sidewall quantum wells. The stronger electron emission observed at the ridges of most V-defects compared to the planar quantum well regions indicates larger local injected carrier densities, confirming that V-defect sidewalls allow for strong lateral carrier injection when compared to the weaker vertical injection away from the V-defect as evidenced by the weaker electron emission intensity away from the V-defects.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

Optical tuning of the diamond Fermi level measured by correlated scanning probe microscopy and quantum defect spectroscopy

Quantum technologies based on quantum point defects in crystals require control over the defect charge state. Here we tune the charge state of shallow nitrogen-vacancy and silicon-vacancy centers by locally oxidizing a hydrogenated surface with moderate optical excitation and simultaneous spectral monitoring. The loss of conductivity and change in work function due to oxidation are measured in atmosphere using conductive atomic force microscopy and Kelvin probe force microscopy (KPFM). We correlate these scanning probe measurements with optical spectroscopy of the nitrogen-vacancy and silicon-vacancy centers created via implantation 15–25 nm beneath the diamond surface and annealing. The observed charge state of the defects as a function of optical exposure demonstrates that laser oxidation provides a way to precisely tune the Fermi level over a range of at least 2.00 eV. We also observe a significantly larger oxidation rate for implanted surfaces compared to unimplanted surfaces under ambient conditions. Here, combined with knowledge of the electron affinity of a surface, these results suggest KPFM is a powerful, high-spatial-resolution technique to advance surface Fermi level engineering for charge stabilization of quantum defects.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Direct visualization of electromagnetic wave dynamics by laser-free ultrafast electron microscopy

Integrating femtosecond lasers with electron microscopies has enabled direct imaging of transient structures and morphologies of materials in real time and space. Here, we report the development of a laser-free ultrafast electron microscopy (UEM) offering the same capability but without requiring femtosecond lasers and intricate instrumental modifications. We create picosecond electron pulses for probing dynamic events by chopping a continuous beam with a radio frequency (RF)–driven pulser with the pulse repetition rate tunable from 100 MHz to 12 GHz. As a first application, we studied gigahertz electromagnetic wave propagation dynamics in an interdigitated comb structure. We reveal, on nanometer space and picosecond time scales, the transient oscillating electromagnetic field around the tines of the combs with time-resolved polarization, amplitude, and local field enhancement. This study demonstrates the feasibility of laser-free UEM in real-space visualization of dynamics for many research fields, especially the electrodynamics in devices associated with information processing technology.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

Low-voltage scanning electron microscopy of multilayer polymer systems

The possibilities of low-voltage scanning electron microscopy for visualization of specific features of the microstructure in internal layers of multilayer polymer films are demonstrated by the example of “chitosan–polyelectrolyte complex–alginic acid” composite. The process of electron beam interaction with a sample at low electron energies is considered. The key parameters of low-voltage electron microscopy, which make it possible to increase the resolution of SEM images of polymer systems, are discussed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Magnification Effects in Scanning Tunneling Microscopy: the Role of Surface Radicals

Scanning tunneling microscopy (STM) is a fundamental tool for determination of the surface atomic structure. However, the interpretation of high resolution microscopy images is not straightforward. In this paper we provide a physical insight on how STM images can suggest atomic locations which are distinctively different from the real ones. This effect should be taken into account when interpreting high-resolution STM images obtained on surfaces with directional bonds. It is shown that spurious images are formed in the presence of polarized surface radicals showing a pronounced angle with respect to the surface normal. This issue has been overlooked within the surface science community and often disregarded by experimentalists working with STM. Without loss of generality, we illustrate this effect by the magnification observed for pentamer-like structures on (110), (113), and (331) surfaces of silicon and germanium.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Influence of Time-of-Flight Chromatic Aberration on the Dynamics of Propagation of Pulsed Electron Beam in Ultrafast Electron Microscopy: A New Strategy for Better Temporal Resolution

A common strategy aimed at achieving a high temporal resolution in ultrafast electron microscopy and diffraction is based on the use of strong electrostatic fields in the accelerating gap to form fast electron pulses of ultrashort duration. In this work, the dynamics of the propagation of ultrashort photoelectron bunches is studied taking into account the time-of-flight chromatic aberration: the spread-out of electron pulses at the exit from the region of the accelerating electric field. The results of the calculation of the duration of photoelectron pulses taking into account Coulomb repulsion are presented. According to the analysis, the use of strong electrostatic fields in the accelerating gap for the formation of fast electron pulses of ultrashort duration is not a necessary condition for achieving the final high temporal resolution in the method of ultrafast electron microscopy. The modes of operation of ultrafast transmission electron microscope were found for which the temporal resolution increases with the growth of time-of-flight chromatic aberration.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2018

Atomic Force Microscopy Measurement of the Resistivity of Semiconductors

The surface of silicon substrates has been studied experimentally and theoretically by the method of atomic force microscopy spreading resistance imaging, and measuring techniques for the spreading resistance of semiconductors have been developed based on these data. It has been shown that the resistivity of silicon can be determined reliably if the force with which the probe is pressed against the substrate exceeds some threshold. The influence of the environment on the values of currents in the probe–substrate system has been studied. It has been found that the electrical performance of semiconductors can be properly determined by atomic force microscopy spreading resistance imaging under high-vacuum conditions.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

High-Energy X-Ray Diffraction Microscopy in Materials Science

High-energy diffraction microscopy (HEDM) is an implementation of three-dimensional X-ray diffraction microscopy. HEDM yields maps of internal crystal orientation fields, strain states, grain shapes and locations as well as intragranular orientation distributions, and grain boundary character. Because it is nondestructive in hard materials, notably metals and ceramics, HEDM has been used to study responses of these materials to external fields including high temperature and mechanical loading. Currently available sources and detectors lead to a spatial resolution of ~1 μm and an orientation resolution of <0.1°. With the penetration characteristic of high energies ( E ≥ 50 keV), sample cross-section dimensions of ~1 mm can be studied in materials containing elements across much of the Periodic Table. This review describes hardware and software associated with HEDM as well as examples of applications. Overall, these applications include studies of grain growth, recrystallization, texture development, orientation gradients, deformation twinning, annealing twinning, plastic deformation, and additive manufacturing. We also describe relationships to other X-ray-based methods as well as prospects for further development.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Chemical and bonding analysis of liquids using liquid cell electron microscopy

Liquid cell transmission electron microscopy (TEM) has become an essential tool for studying the structure and properties of both hard and soft condensed-matter samples, as well as liquids themselves. Liquid cell sample holders, often consisting of two thin window layers separating the liquid sample from the high vacuum of the microscope column, have been designed to control in situ conditions, including temperature, voltage/current, or flow through the window region. While high-resolution and time-resolved TEM imaging probes the structure, shape, and dynamics of liquid cell samples, information about the chemical composition and spatially resolved bonding is often difficult to obtain due to the liquid thickness, the window layers, the holder configuration, or beam-induced radiolysis. Here, we review different approaches to quantitative liquid cell electron microscopy, including recent developments to perform energy-dispersive x-ray and electron energy-loss spectroscopy experiments on samples in a liquid environment or the liquid itself. We also cover graphene liquid cells and other ultrathin window layer holders.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2017

Final Technical Report for Award DESC0011912, "Trimodal Tapping Mode Atomic Force Microscopy: Simultaneous 4D Mapping of Conservative and Dissipative Probe-Sample Interactions of Energy-Relevant Materials”

The final project report covering the period 7/1/14-6/30/17 provides an overview of the technical accomplishments in the areas of (i) fundamental viscoelasticity, (ii) multifrequency atomic force microscopy, and (iii) characterization of energy-relevant materials with atomic force microscopy. A list of publications supported by the project is also provided.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Structural Studies of Amorphous Materials by Fluctuation Electron Microscopy

Fluctuation Electron Microscopy (FEM) is a technique that examines the fluctuations in electron scattering across a uniformly thin amorphous sample. The statistics of the intensity fluctuations, mean and variance, reveal any underlying medium-range order present in the structure. The goals of this project were: (1) To determine the fundamentals of the scattering physics that gives rise to the variance signal in fluctuation electron microscopy (FEM); (2) To use these discoveries to find ways to quantify FEM; (3) To apply the FEM method to interesting and technologically important families of amorphous materials, particularly those with important applications in energy-related processes. Excellent progress was made in items (1) and (2). In stage (3) we did not examine the metamict zircons, as proposed. Instead, we examined films of polycrystalline and amorphous semi-conducting diamond. Significant accomplishments are: (1) A Reverse Monte Carlo procedure was successfully implemented to invert FEM data into a structural model. This is computer-intensive, but it demonstrated that diffraction and FEM data from amorphous silicon are most consistent with a paracrystallite model. This means that there is more diamond-like topology present in amorphous silicon than is predicted by the continuous random network model. (2) There is significant displacement decoherence arising in diffraction from amorphous silicon and carbon. The samples are being bombarded by the electron beam and atoms do not stay still while being irradiated – much more than was formerly understood. The atom motions cause the destructive and constructive interferences in the diffraction pattern to fluctuate with time, and it is the time-averaged speckle that is being measured. The variance is reduced by a factor m, 4 ≤ m ≤ 1000, relative to that predicted by kinematical scattering theory. (3) Speckle intensity obeys a gamma distribution, where the mean intensity $ \overline{I}\ $ and m are the two parameters governing the shape of the gamma distribution profile. m is determined by the illumination spatial coherence, which is normally very high, and mostly by the displacement decoherence within the sample. (4) Amorphous materials are more affected by the electron beam than are crystalline materials. Different samples exhibit different disruptibility, as measured by the effective values of m that fit the data. (5) Understanding the origin of the displacement decoherence better should lead to efficient methods for computing the observed variance from amorphous materials.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Combined microscopy studies of complex electronic materials. Final report

The aim of this project was to study the electronic properties of exotic electronic materials which are only available as micron-scale samples or have microscopic inhomogeneity, using a special combination of multiple submicron scanning microscopy techniques allied to control of temperature, magnetic and electric fields and mechanical strain. In nanobeams of VO 2 , with its still mysterious metal-insulator phase transition, we determined the phase diagram and demonstrated that hydrogen diffusion is strongly channelled along one crystal axis. Using graphene, we developed and applied the scanning photo-Nernst effect, in which a current is generated when a laser is focused on the edge a sample in a magnetic field. We demonstrated that CrI 3 , a two-dimensional layered magnet, retains true Ising ferromagnetization down the monolayer level due to its out-of-plane anisotropy. In exfoliated WTe 2 , a layered topological semimetal, we discovered that monolayers are the first monolayer topological insulator and we imaged the helical edge states with scanning microwave microscopy. We also discovered that the same material when stacked in a few layers is a ferroelectric metal, and that the monolayer can be converted to a superconducting state by electron doping with a gate a temperatures below 1 K. Additionally, we developed the capability to perform momentum-resolved electronic spectroscopy on operating nanoscale devices by applying micron-scale angle resolved photoemission spectroscopy to two-dimensional heterostructure devices incorporating graphene and transition metal dichalcogenide semiconductors. Using it, we measured the band gaps of a series of monolayer semiconductors and observed band renormalization as a function of electron doping in monolayer WSe 2 .

36 MATERIALS SCIENCE↗
DOE OSTI2026

Development of In-situ Digital Microscopy Capabilities for Electrochemical Testing

In-situ digital optical microscopy data was successfully collected during the potentiodynamic polarization of iron in corrosive NaCl solution. This report serves as a foundation for future, more comprehensive experiments that correlate electrochemical responses to near-real time surface morphology tracking. The development of in-situ microscopy and roughness collection will help realize increases in data acquisition of the surface morphology during electrochemical experiments.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Multiscale Cryo Electron Microscopy Reveals Interfacial Degradation and Stabilization in Battery Electrodes

Electrochemical interfaces are dynamic systems, evolving based on their local environment and reactant surface structures. The electrode-electrolyte interface in Li-ion batteries can be protective, limiting parasitic reactions with the electrolyte to passivate the surface [1]. Additionally, this interphase has an impact on the Li-ion transport through that layer based on its composition, bonding environment, and thickness. These parameters are challenging to collect and may vary depending on the electrode surface site investigated relative to its spatial position in a coin cell. This study will detail a multiscale cryogenic electron microscopy approach where millimeter-scale cross-sections through the coin cell batteries were made using a cryogenic stage within a fs-laser plasma focused ion beam (laser PFIB) with complementary energy dispersive X-ray spectroscopy able to detect variations in the composition at electrode interfaces [2]. Microscale cross-sectioning and lamella sample preparation of battery electrodes was conducted at the Center for Integrated Nanotechnologies using a Ga-ion focused ion beam (FIB) with air-free and cryo-transfer [3], followed by nanoscale mapping of composition and bonding within the CEI through cryo-scanning transmission electron microscopy (cryo-STEM) electron energy loss spectroscopy [4]. This multiscale approach enabled identification of millimeter-scale features of a battery stack with visualization of degradation in electrodes such as cracks in cathode particles, gas evolution, and SEI evolution; microscale interfacial characteristics, such as heterogeneity in the SEI or barrier layer and identification of electrolyte networks to the electrode surfaces; and nanoscale measurement of the CEI thickness, mapping of transition metal bonding within the cathode particles to identify loss of active materials, and identification of beneficial electrolyte additives incorporated into the CEI structure. This multiscale approach allows for a statistical understanding of the primary mechanisms and parasitic degradation pathways that impact performance by limiting the ion transport pathways within Li+ batteries.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Review of Progress in Atomic Force Microscopy

The study of biological samples is one of the most attractive and innovative fields of application of atomic force microscopy AFM. Recent breakthroughs in software and hardware have revolutionized this field and this paper reports on recent trends and describes examples of applications on biological samples. Originally developed for high-resolution imaging purposes, the AFM also has unique capabilities as a nano-indentor to probe the dynamic visco-elastic material properties of living cells in culture. In particular, AFM elastography combines imaging and indentation modalities to map the spatial distribution of cell mechanical properties, which in turn reflect the structure and function of the underlying structure. This paper describes the progress and development of atomic force microscopy as applied to animal and plant cell structures.

47 OTHER INSTRUMENTATION↗
DOE OSTI2017

A Comparative Study of Sample Preparation for Staining and Immunodetection of Plant Cell Walls by Light Microscopy

Staining and immunodetection by light microscopy are methods widely used to investigate plant cell walls. The two techniques have been crucial to study the cell wall architecture in planta , its deconstruction by chemicals or cell wall-degrading enzymes. They have been instrumental in detecting the presence of cell types, in deciphering plant cell wall evolution and in characterizing plant mutants and transformants. The success of immunolabeling relies on how plant materials are embedded and sectioned. Agarose coating, wax and resin embedding are, respectively, associated with vibratome, microtome and ultramicrotome sectioning. Here, we have systematically carried out a comparative analysis of these three methods of sample preparation when they are applied for cell wall staining and cell wall immunomicroscopy. In order to help the plant community in understanding and selecting adequate methods of embedding and sectioning for cell wall immunodetection, we review in this article the advantages and limitations of these three methods. Moreover, we offer detailed protocols of embedding for studying plant materials through microscopy.

59 BASIC BIOLOGICAL SCIENCES↗