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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 307 records · Page 17
All sourcesNASA NTRSDOE OSTI
NASA NTRS1979

The MSFC complementary metal oxide semiconductor (including multilevel interconnect metallization) process handbook

The fabrication techniques for creation of complementary metal oxide semiconductor integrated circuits at George C. Marshall Space Flight Center are described. Examples of C-MOS integrated circuits manufactured at MSFC are presented with functional descriptions of each. Typical electrical characteristics of both p-channel metal oxide semiconductor and n-channel metal oxide semiconductor discrete devices under given conditions are provided. Procedures design, mask making, packaging, and testing are included.

Bouldin, D. L.↗
NASA NTRS1980

Wavelength-modulated photocapacitance spectroscopy

Derivative deep-level spectroscopy was achieved with wavelength-modulated photocapacitance employing MOS structures and Schottky barriers. The energy position and photoionization characteristics of deep levels of melt-grown GaAs and the Cr level in high-resistivity GaAs were determined. The advantages of this method over existing methods for deep-level spectroscopy are discussed.

Kamieniecki, E.↗
NASA NTRS1981

Chemical composition of the SiO2/InSb interface as determined by X-ray photoelectron spectroscopy

In connection with the relatively poor insulating characteristics of the native oxides of most III-V compound semiconductors, there has been interest in the development of deposited dielectric layers for surface passivation and MOS device fabrication on III-V compound semiconductor substrates. The chemical system of SiO2 deposited on single-crystal InSb substrates has been proposed for the fabrication of IR CCD. The considered investigation is concerned with a detailed examination of the chemical nature of the interactions between deposited and native oxides using X-ray photoelectron spectroscopy (XPS) in conjunction with a chemical-etching technique for depth profiling. The compositional structure of the interfaces obtained in the SiO2/native oxide/InSb system is derived on the basis of an intensity analysis of XPS spectra. Thermal oxidation of the InSb substrate is found to result in an In-rich native oxide and excess elemental Sb at the native oxide/substrate interface.

Vasquez, R. P.↗
NASA NTRS1981

Aerobraking mission design - Mission domain and mass performance

The work reported comprises part of an Aerobraking Study that sought to establish a 'feasible mission design, navigation design, and MOS design and to show the desirability of aerobraking for the Venus Orbiting Imaging Radar (VOIR) mission by assessing mission performance, cost, and risk'. The developed software assesses accurately the mass performance of aerobraking and chemical missions that place a spacecraft in orbit about another planet. All injection date/arrival data combinations that provide a trajectory with adequate mass performance are available for further study. The considered analysis has been applied to the Type I trajectories from earth to Venus in 1988. The analysis can easily be applied to missions to Mars and to Titan. The intersection of the determined mass performance domain with the stable orbit domain provides an adequate mission domain for VOIR 1988.

Kerridge, S. J.↗
NASA NTRS1983

Standard Transistor Arrays

Standard Transistor Array (STAR) design system is semicustom approach to generating random-logic integrated MOS digital circuits. Primary program in STAR system is CAPSTAR, STAR Cell Arrangement Program. CAPSTAR is augmented by automatic routining program, Display program and library of logic cells.

Cox, G. W.↗
NASA NTRS1981

Process characteristics and design methods for a 300 deg quad OP amp

The results of process characterization, circuit design, and reliability studies for the development of a quad OP amplifier intended for use up to 300 C are presented. A dielectrically isolated complementary vertical bipolar process was chosen to fabricate the amplifier in order to eliminate isolation leakage and the possibility of latch up. Characterization of NPN and PNP junctions showed them to be suitable for use up to 300 C. Interconnect reliability was predicted to be greater than four years mean time between failure. Parasitic MOS formation was eliminated by isolation of each device.

Beasom, J. D.↗
NASA NTRS1981

GaAs-oxide interface states - Gigantic photoionization via Auger-like process

Spectral and transient responses of photostimulated current in MOS structures were employed for the study of GaAs-anodic oxide interface states. Discrete deep traps at 0.7 and 0.85 eV below the conduction band were found with concentrations of 5 x 10 to the 12th/sq cm and 7 x 10 to the 11th/sq cm, respectively. These traps coincide with interface states induced on clean GaAs surfaces by oxygen and/or metal adatoms (submonolayer coverage). In contrast to surfaces with low oxygen coverage, the GaAs-thick oxide interfaces exhibited a high density (about 10 to the 14th/sq cm) of shallow donors and acceptors. Photoexcitation of these donor-acceptor pairs led to a gigantic photoionization of deep interface states with rates 1000 times greater than direct transitions into the conduction band. The gigantic photoionization is explained on the basis of energy transfer from excited donor-acceptor pairs to deep states.

Lagowski, J.↗
NASA NTRS1981

Annual Conference on Nuclear and Space Radiation Effects, 18th, University of Washington, Seattle, WA, July 21-24, 1981, Proceedings

Single event upset phenomena are discussed, taking into account cosmic ray induced errors in IIL microprocessors and logic devices, single event upsets in NMOS microprocessors, a prediction model for bipolar RAMs in a high energy ion/proton environment, the search for neutron-induced hard errors in VLSI structures, soft errors due to protons in the radiation belt, and the use of an ion microbeam to study single event upsets in microcircuits. Basic mechanisms in materials and devices are examined, giving attention to gamma induced noise in CCD's, the annealing of MOS capacitors, an analysis of photobleaching techniques for the radiation hardening of fiber optic data links, a hardened field insulator, the simulation of radiation damage in solids, and the manufacturing of radiation resistant optical fibers. Energy deposition and dosimetry is considered along with SGEMP/IEMP, radiation effects in devices, space radiation effects and spacecraft charging, EMP/SREMP, and aspects of fabrication, testing, and hardness assurance.

Tasca, D. M.↗
NASA NTRS1982

Behavior of the Si/SiO2 interface observed by Fowler-Nordheim tunneling

Thin-oxide (40-50 A) metal oxide semiconductor (MOS) structures are shown to exhibit, before large levels of electron tunnel injection, the near-ideal behavior predicted for a uniform trapezoidal barrier with thick-oxide properties. The oscillatory field dependence caused by electron-wave interference at the Si/SiO2 interface suggests an abrupt, one-monolayer barrier transition (approximately 2.5 A) consistent with earlier work. After tunnel injection of 10 to the 17th - 5 x 10 to the 18th electrons/sq cm, the barrier undergoes appreciable degradation, leading to enhanced tunneling conductance. Reproducible behavior is observed among different samples. This effect is found to be consistent with the generation of positive states in the region of the oxide near the Si/SiO2 interface (less than 20 A), where the tunneling electrons emerge into the oxide conduction band.

Maserjian, J.↗
NASA NTRS1982

The HEAO-3 high resolution gamma-ray spectrometer

Features and results produced by the HEAO 3 spacecraft gamma ray spectrometer are outlined. The instrument had high resolution germanium detectors, each 55 mm diam and 45 mm long, surrounded by a cesium iodide anticoincidence shield with four quadrants of well-crystal and a collimayor crystal. The crystals had a total effective area of 70 sq cm at 100 keV and 26.4 sq cm at .511 MeV with a spectral resolution at launch of .23 percent at 1.33 MeV. The spacecraft travels a circular orbit of 500 km altitude with an inclination of 43.6 deg. Solid methane and ammonia cryogenic fluids refrigerated the crystals for 8.5 mos, after which the shield crystals functioned as isotropic detectors for solar flare events and gamma ray bursts until mission termination in May 1981. A total of 37 solar flare type events were observed, with gamma ray events occurring with flares of class X1 or stronger.

Jacobson, A. S.↗
NASA NTRS1982

Ultraheavy cosmic rays - HEAO-3 results

The instrumentation and results from the Heavy Nuclei experiment on the HEAO 3 satellite are described. Six independently analyzed dual-gap ionization chambers measured the energy loss of the cosmic rays while a Cerenkov counter with 8 independently analyzed photomultipliers viewed two sheets of Pilot 425 plastic in a white box. Trajectories of the cosmic ray nuclei were determined in multiwire ionization hodoscopes. Variations in abundances were observed to be imperfectly ordered in terms of the first ionization potential, and volatility was also ruled out as the controlling factor. A predicted drop in abundance after Ba-56 was found, along with another sharp fall above Pb-82. Only one actinide-type event was detected during the 14 mos of viewing, a result consistent with other findings but which testifies against r-process formation.

Israel, M. H.↗
NASA NTRS1982

Lightning protection of wind turbines

Possible damages to wind turbine components due to lightning strikes are discussed and means to prevent the damage are presented. A low resistance path to the ground is noted to be essential for any turbine system, including metal paths on nonmetal blades to conduct the strike. Surge arrestors are necessary to protect against overvoltages both from utility lines in normal operation and against lightning damage to control equipment and contactors in the generator. MOS structures are susceptible to static discharge injury, as are other semiconductor devices, and must be protected by the presence of static protection circuitry. It is recommended that the electronics be analyzed for the circuit transient response to a lightning waveform, to induced and dc current injection, that input/output leads be shielded, everything be grounded, and lightning-resistant components be chosen early in the design phase.

Dodd, C. W.↗
NASA NTRS1982

Remote Sensing: an International Perspective

The United States Government is not planning the continuation of the LANDSAT program beyond the anticipated date of 1988. Other sources of data which must ensure a continuity of information to the resource manager are environmental satellites to be launched in the next 5-10 by other entities. AEROS, and advanced Earth Resources Observation System, a private sector program, privately funded, and operated on a commercial basis, the AEROS data system, and CEDIS the combined environmental data information system are under development for the U.S. The European Space Agency's ERS-1, France's SPOT, Japan's MOS-1, Canada's RADARSAT, and India's IRS-1 satellites and their sensors are described.

Mcclure, M.↗
NASA NTRS1982

Galileo - Mission to Jupiter

The payloads, mission, and performance characteristics of the Galileo probe, to be launched by a Centaur boost from the Orbiter in 1985, are described. The Galileo is intended to determine the chemical compositions and physical states of the Jovian atmosphere and of the Jovian satellites, and to investigate the structure and dynamics of the Jovian magnetosphere. The orbiting part of the spacecraft will carry a near-IR mapping spectrometer, a photopolarimeter radiometer, a solid state imaging camera, a UV spectrometer, and five fields and particles instruments. A probe will be dropped for parachute descent into the Jovian atmosphere, carrying an atmospheric structure instrument, a neutral mass spectrometer, a He abundance interferometer, a nephelometer, and a radiometer. A retrorocket burn during the encounter with Jupiter will place the Galileo in an orbit calculated to pass close to all the Jovian moons over 12 orbits spanning 20 mos.

Yeates, C. M.↗
NASA NTRS1983

Nuclear Science Symposium, 29th, and Symposium on Nuclear Power, 14th, Washington, DC, October 20-22, 1982, Proceedings

High-energy radiation detectors suitable for balloon-borne or space-based radiation event studies are described. The employment of NaI(Tl) scintillator bars for gamma ray detection is outlined, and the development of a fluorescent gated gas-filled scintillation proportional counter is reported. A high throughput nondispersive hard X ray spectrograph with angular resolution for cosmic bursts, transients, and sources has been constructed. Features of a sealed high pressure xenon filled imaging proportional counter with a 30 sq cm sensitive area are explored. Finally, the various radiation effects on electronic circuitry in a space environment are defined, and an MOS dosimeter for assaying the cumulative radiation flux in a spacecraft due to ambient conditions is characterized.

Davis, W. D.↗
NASA NTRS1983

Spas color camera

The procedures to be followed in assessing the performance of the MOS color camera are defined. Aspects considered include: horizontal and vertical resolution; value of the video signal; gray scale rendition; environmental (vibration and temperature) tests; signal to noise ratios; and white balance correction.

Toffales, C.↗
NASA NTRS1984

Deep diode arrays for X-ray detection

Temperature gradient zone melting process was used to form p-n junctions in bulk of high purity silicon wafers. These diodes were patterned to form arrays for X-ray spectrometers. The whole fabrication processes for these X-ray detectors are reviewed in detail. The p-n junctions were evaluated by (1) the dark diode I-V measurements, (2) the diode C sub I - V measurements, and (3) the MOS C-V measurements. The results showed that these junctions were linearly graded in charge distribution with low reverse bias leakage current flowing through them (few nA at -10 volts). The X-ray detection experiments showed that an FWHM of 500 eV was obtained from these diodes with a small bias of just -5 volts (for X-ray source Fe55). A theoretical model was proposed to explain the extra peaks found in the energy spectra and a very interesting point - cross talk effect was pointed out. This might be a solution to the problem of making really high resolution X-ray spectrometers.

Zemel, J. N.↗
NASA NTRS1984

Conceptual design of a hybrid Ge:Ga detector array

For potential applications in space infrared astronomy missions such as the Space Infrared Telescope Facility and the Large Deployable Reflector, integrated arrays of long-wavelength detectors are desired. The results of a feasibility study which developed a design for applying integrated array techniques to a long-wavelength (gallium-doped germanium) material to achieve spectral coverage between 30 and 200 microns are presented. An approach which builds up a two-dimensional array by stacking linear detector modules is presented. The spectral response of the Ge:Ga detectors is extended to 200 microns by application of uniaxial stress to the stack of modules. The detectors are assembled with 1 mm spacing between the elements. Multiplexed readout of each module is accomplished with integration sampling of a metal-oxide-semiconductor (MOS) switch chip. Aspects of the overall design, including the anticipated level of particle effects on the array in the space environment, a transparent electrode design for 200 microns response, estimates of optical crosstalk, and mechanical stress design calculations are included.

Parry, C. M.↗