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At least 307 records · Page 17
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Performance analysis of photodetectors based on 2D materials and heterostructures

The unprecedented demand for sophisticated, self-powered, compact, ultrafast, cost-effective, and broadband light sensors for a myriad of applications has spurred a lot of research, precipitating in a slew of studies over the last decade. Apart from the photosensing ability of an active element in the light sensor, the device architecture is crucial in terms of photoinduced charge carrier generation and separation. Since the inception of graphene and the subsequent research growth in the atomically thin 2D materials, researchers have developed and adapted different families of 2D materials and device architectures, including single element 2D, 0D/2D, 2D/2D, 1D/2D stacked structures, and so on. Here this review discusses the recent reports on the light-sensing properties of various 2D materials, their heterostructures, and characteristics applicable to the ultraviolet-near infrared (UV-NIR), short-wave IR (SWIR), mid-wave IR (MWIR), long-wave IR (LWIR), and terahertz (THz) spectral ranges. It highlights the novelty of the burgeoning field, the heightened activity at the boundaries of engineering and materials science, particularly in the generation of charge carriers, their separation, and extraction, and the increased understanding of the underpinning science through modern experimental approaches. Devices based on the simultaneous effects of the pyro-phototronic effect (PPE) and the localized surface plasmon resonance (LSPR) effect, the photothermoelectric effect (PTE)-assisted photodetectors (PDs), waveguide-integrated silicon-2D PDs, metal-2D-metal PDs, and organic material PDs are examined rigorously. Theoretical treatment utilizing various computational approaches to investigate 2D materials and heterostructures for photodetection applications is also briefly discussed. At the end, current challenges and solutions to enhance the figures of merit of photodetectors are proposed.

2D transition metal chalcogenides↗
DOE OSTI2022

Designing strong and tunable magnetoelectric coupling in 2D trilayer heterostructures

Abstract The quest for electric-field control of nanoscale magnetic states such as skyrmions, which would impact the field of spintronics, has led to a challenging search for multiferroic materials or structures with strong magnetoelectric coupling and efficient electric-field control. Here we report a theoretical prediction that such phenomena can be realized in two-dimensional (2D) bilayer FE/PMM and trilayer FE/PMM/FE heterostructures (two-terminal and three-terminal devices), where FE is a 2D ferroelectric and PMM is a polar magnetic metal with strong spin–orbit coupling. Such a PMM has strong Dzyaloshinskii-Moriya interactions (DMI) that can generate skyrmions, while the FE can generate strong magnetoelectric coupling through polarization-polarization interactions. In trilayer heterostructures, contact to the metallic PMM layer enables multiple polarization configurations for electric-field control of skyrmions. We report density-functional-theory calculations for particular material choices that demonstrate the effectiveness of these arrangements, with the key driver being the polarization-polarization interactions between the PMM and FE layers. The present findings provide a method to achieve strong magnetoelectric coupling in the 2D limit and a new perspective for the design of related spintronics.

Materials Science↗
DOE OSTI2021

Partial charge transfer and absence of induced magnetization in EuS(111)/Bi 2 Se 3 heterostructures

We report that heterostructures made from topological and magnetic insulators promise to form excellent platforms for new electronic and spintronic functionalities mediated by interfacial effects. We report the results of a first-principles density functional theory study of the geometric, electronic structure, and magnetic properties of the EuS( 111 )/Bi 2 Se 3 interface, including van der Waals and relativistic spin-orbit effects. In contrast to previous theoretical studies, we find no appreciable magnetic anisotropy in such a heterostructure. We also do not see additional induced magnetization at the interface or the magnetic proximity effect on the topological states. This is due to the localized nature of Eu moments and because of a partial charge transfer of ~ 0.5 electron from Eu to Se. The formation of the surface dipole shifts the Dirac cone about 0.4 eV below the chemical potential, and the associated electrostatic screening moves the topological state from the first to the second quintuple layer of Bi 2 Se 3 .

36 MATERIALS SCIENCE↗
DOE OSTI2022

Multiband superconductivity in strongly hybridized 1 T ' - WTe 2 / NbSe 2 heterostructures

The interplay of topology and superconductivity has become a subject of intense research in condensed-matter physics for the pursuit of topologically nontrivial forms of superconducting pairing. An intrinsically normal-conducting material can inherit superconductivity via electrical contact to a parent superconductor via the proximity effect, usually understood as Andreev reflection at the interface between the distinct electronic structures of two separate conductors. However, at high interface transparency, strong coupling inevitably leads to changes in the band structure, locally, owing to hybridization of electronic states. Here, we investigate such strongly proximity-coupled heterostructures of monolayer $1T$' - $\mathrm{WTe_2}$ grown on NbSe 2 by van der Waals epitaxy. The superconducting local density of states, resolved in scanning tunneling spectroscopy down to 500 mK, reflects a hybrid electronic structure well described by a multiband framework based on the McMillan equations which captures the multiband superconductivity inherent to the NbSe 2 substrate and that is induced by proximity to $\mathrm{WTe_2}$ self-consistently. Our material-specific tight-binding model captures the hybridized heterostructure quantitatively and confirms that strong interlayer hopping gives rise to a semimetallic density of states in the two-dimensional $\mathrm{WTe_2}$ bulk, even for nominally band-insulating crystals. The model further accurately predicts the measured order parameter Δ ≅ 0.6 meV induced in the $\mathrm{WTe_2}$ monolayer bulk, stable beyond a 2 T magnetic field. So we believe that our detailed multiband analysis of the hybrid electronic structure provides a useful tool for sensitive spatial mapping of induced order parameters in proximitized atomically thin topological materials.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Extraordinary anisotropic magnetoresistance in CaMnO 3 /CaIrO 3 heterostructures

The realization of four-fold anisotropic magnetoresistance (AMR) in novel 3d-5d heterostructures has boosted major efforts in antiferromagnetic spintronics. However, despite the potential of incorporating strong spin-orbit coupling, only small AMR signals have been detected thus far, prompting a search for new mechanisms to enhance the signal. In this study on CaMnO 3 /CaIrO 3 heterostructures, we report a unique dual-four-fold symmetric 70% AMR; a signal two orders of magnitude larger than previously observed in similar systems. We find that one order is enhanced by tuning a large biaxial anisotropy through octahedral tilts of similar sense in the constituent layers, while the second order is triggered by a spin-flop transition in a nearly Mott-type phase. Dynamics between these two phenomena as evidenced by the step-like AMR and a superimposed biaxial-anisotropy-induced AMR capture a subtle interplay of pseudospin coupling with the lattice and external magnetic field. Furthermore, our study shows that a combination of charge-transfer, interlayer coupling, and a spin-flop transition can yield a giant AMR relevant for sensing and antiferromagnetic memory applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Charge density waves in the 2.5-dimensional quantum heterostructure

Charge density wave (CDW) and their interplay with correlated and topological quantum states are at the forefront of condensed matter research. The 4H b -TaS 2 is a CDW ordered quantum heterostructure that is formed by alternative stacking of Mott insulating 1T-TaS 2 and Ising superconducting 1H-TaS 2 . While the $\sqrt{13}$ ×$\sqrt{13}$ and 3 × 3 CDWs have been respectively observed in the bulk 1T-TaS 2 and 2H-TaS 2 , the CDWs and their pivotal role for unconventional superconductivity in the 4⁢Hb-TaS 2 remain unsolved. In this Letter, we reveal the two-dimensional (2D) $\sqrt{13}$ ×$\sqrt{13}$ chiral CDW in the 1T layers and intraunit cell coupled 2D 2 × 2 CDW in the 1H and 1H' layers of 4⁢H b -TaS 2 . Here, our results establish 4⁢H b -TaS 2 a 2.5D quantum heterostructure, where 2D quantum states emerge from 3D crystalline structure.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Infrared Interlayer Exciton Emission in MoS 2 / WSe 2 Heterostructures

Here, we report light emission around 1 eV (1240 nm) from heterostructures of MoS 2 and WSe 2 transition metal dichalcogenide monolayers. We identify its origin in an interlayer exciton (ILX) by its wide spectral tunability under an out-of-plane electric field. From the static dipole moment of the state, its temperature and twist-angle dependence, and comparison with electronic structure calculations, we assign this ILX to the fundamental interlayer transition between the K valleys in this system. Our results gain access to the interlayer physics of the intrinsically incommensurate MoS 2 /WSe 2 heterostructure, including moiré and valley pseudospin effects, and its integration with silicon photonics and optical fiber communication systems operating at wavelengths longer than 1150 nm.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Electrical Control and Transport of Tightly Bound Interlayer Excitons in a MoSe 2 /hBN/MoSe 2 Heterostructure

Controlling interlayer excitons in Van der Waals heterostructures holds promise for exploring Bose-Einstein condensates and developing novel optoelectronic applications, such as excitonic integrated circuits. Despite intensive studies, several key fundamental properties of interlayer excitons, such as their binding energies and interactions with charges, remain not well understood. Here we report the formation of momentum-direct interlayer excitons in a high-quality MoSe 2 /hBN/MoSe 2 heterostructure under an electric field, characterized by bright photoluminescence (PL) emission with high quantum yield and a narrow linewidth of less than 4 meV. These interlayer excitons show electrically tunable emission energy spanning ~1⁢8⁢0 meV through the Stark effect, and exhibit a sizable binding energy of ~8⁢1 meV in the intrinsic regime, along with trion binding energies of a few millielectronvolts. Remarkably, we demonstrate the long-range transport of interlayer excitons with a characteristic diffusion length exceeding 1⁢0 μ⁢m, which can be attributed, in part, to their dipolar repulsive interactions. Further, spatially and polarization-resolved spectroscopic studies reveal rich exciton physics in the system, such as valley polarization, local trapping, and the possible existence of dark interlayer excitons. Furthermore, the formation and transport of tightly bound interlayer excitons with narrow linewidth, coupled with the ability to electrically manipulate their properties, open exciting new avenues for exploring quantum many-body physics, including excitonic condensate and superfluidity, and for developing novel optoelectronic devices, such as exciton and photon routers.

2-dimensional systems↗
DOE OSTI2019

Freestanding crystalline YB a 2 C u 3 O 7 – x heterostructure membranes

We report the synthesis of millimeter-sized freestanding single-crystal YBa 2 Cu 3 O 7–x heterostructure membranes with nanoscale thickness. On a SrTiO 3 substrate, a heteroepitaxial water-soluble sacrificial layer of Sr 3 Al 2 O 6 followed by an encapsulated YBa 2 Cu 3 O 7–x film is grown by pulsed laser deposition. A freestanding YBa 2 Cu 3 O 7–x heterostructure membrane is obtained by etching the sacrificial layer. As a result, its high crystalline quality is demonstrated via x-ray diffraction, electrical measurements, and scanning transmission electron microscopy.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Hopping transport in SrTiO 3 /Nd 1–x TiO 3 /SrTiO 3 heterostructures

Electronic transport near the insulator-metal transition is investigated in the molecular beam epitaxy-grown SrTiO 3 /Nd 1–x TiO 3 /SrTiO 3 heterostructures using temperature dependent magnetotransport measurements. It was found that Nd vacancies introduce localized electronic states resulting in variable range hopping transport at low temperatures. At a fixed Nd-vacancy concentration, a crossover from Mott to Efros-Shklovskii variable range hopping transport was observed with decreasing temperature. With increasing disorder, a sign reversal of magnetoresistance from positive to negative was observed revealing interplay between intra-state interaction and the energy dependence of the localization length. Furthermore, these findings highlight the important role of stoichiometry when exploring intrinsic effects using heterostructure and interfaces in addition to offering broad opportunities to tailor low temperature transport using nonstoichiometry defects.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Design principles and physical properties of two-dimensional heterostructured borides

Principles of design to create dynamically stable transition metal-, lanthanide-, and actinide-based low-dimensional borides are presented. A charge transfer analysis of donor metal atoms to electron deficient honeycombed B lattices allows to predict complex covalent heterostructures hosting Dirac states. The applicable guidelines are supported with the analysis of phonon spectra computed with first-principles calculations to demonstrate the physical stability of nanometer-thick heterostructures. Similar or dissimilar layered borides can be stacked on top of each other in a layer-by-layer fashion creating compounds that can be fundamentally different from the individual layers, opening a rich playground to explore novel physical properties and new materials. Functionalities such as multiple Dirac states, highly dispersive electronic bands, and decoupled acoustic-optical phonon branches are studied. The combination of appealing electronic properties and physical realization makes of predicted layered borides promising materials to integrate a new generation of two-dimensional materials.

2-dimensional systems↗
DOE OSTI2023

Tuning the Curie temperature of a two-dimensional magnet/topological insulator heterostructure to above room temperature by epitaxial growth

Heterostructures of two-dimensional (2D) van der Waals (vdW) magnets and topological insulators (TI) are of substantial interest as candidate materials for efficient spin-torque switching, quantum anomalous Hall effect, and chiral spin textures. However, since many of the vdW magnets have Curie temperatures below room temperature, we want to understand how materials can be modified to stabilize their magnetic ordering to higher temperatures. In this work, we utilize molecular beam epitaxy to systematically tune the Curie temperature (T C ) in thin film Fe 3 GeTe 2 /Bi 2 Te 3 from bulklike values (~220 K) to above room temperature by increasing the growth temperature from 300°C to 375°C. For samples grown at 375°C, cross-sectional scanning transmission electron microscopy (STEM) reveals the spontaneous formation of different Fe m Ge n Te 2 compositions (e.g., Fe 5 Ge 2 Te 2 and Fe 7 Ge 6 Te 2 ) as well as intercalation in the vdW gaps, which are possible origins of the enhanced Curie temperature. Furthermore, this observation paves the way for developing various Fe m Ge n Te 2 /TI heterostructures with novel properties.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Novel phenomena in transition-metal oxide thin films and heterostructures with strong correlations and spin-orbit coupling

Transition-metal oxides have been a central subject of condensed matter physics for decades. In addition to novel electronic states driven by the influence of strong correlation, relativistic spin-orbit coupling effects have recently attracted much attention for their potential to explore topological phenomena. Here, in this article, we review various experimental and theoretical studies on transition-metal oxides with focus on thin films and heterostructures where their physics is much influenced by correlation effects and spin-orbit coupling. The combination of the heterostructure geometry together with correlation and topology leads to a variety of novel states here reviewed. We also discuss perspectives for future research in this broad promising area.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Exchange bias and quantum anomalous nomalous Hall effect in the MnBi 2 Te 4 /CrI 3 heterostructure

The layered antiferromagnetic MnBi 2 Te 4 films have been proposed to be an intrinsic quantum anomalous Hall (QAH) insulator with a large gap. It is crucial to open a magnetic gap of surface states. However, recent experiments have observed gapless surface states, indicating the absence of out-of-plane surface magnetism, and thus, the quantized Hall resistance can only be achieved at the magnetic field above 6 T. We propose to induce out-of-plane surface magnetism of MnBi 2 Te 4 films via the magnetic proximity with magnetic insulator CrI 3 . A strong exchange bias of ~40 meV originates from the long Cr- e g orbital tails that hybridize strongly with Te p orbitals. By stabilizing surface magnetism, the QAH effect can be realized in the MnBi 2 Te 4 /CrI 3 heterostructure. Moreover, the high–Chern number QAH state can be achieved by controlling external electric gates. Thus, the MnBi 2 Te 4 /CrI 3 heterostructure provides a promising platform to realize the electrically tunable zero-field QAH effect.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Capturing 3D atomic defects and phonon localization at the 2D heterostructure interface

The three-dimensional (3D) local atomic structures and crystal defects at the interfaces of heterostructures control their electronic, magnetic, optical, catalytic, and topological quantum properties but have thus far eluded any direct experimental determination. Here, we use atomic electron tomography to determine the 3D local atomic positions at the interface of a MoS 2 -WSe 2 heterojunction with picometer precision and correlate 3D atomic defects with localized vibrational properties at the epitaxial interface. We observe point defects, bond distortion, and atomic-scale ripples and measure the full 3D strain tensor at the heterointerface. By using the experimental 3D atomic coordinates as direct input to first-principles calculations, we reveal new phonon modes localized at the interface, which are corroborated by spatially resolved electron energy-loss spectroscopy. We expect that this work will pave the way for correlating structure-property relationships of a wide range of heterostructure interfaces at the single-atom level.

42 ENGINEERING↗
DOE OSTI2022

Unconventional interlayer exchange coupling via chiral phonons in synthetic magnetic oxide heterostructures

Chiral symmetry breaking of phonons plays an essential role in emergent quantum phenomena owing to its strong coupling to spin degree of freedom. However, direct experimental evidence of the chiral phonon–spin coupling is lacking. In this study, we report a chiral phonon–mediated interlayer exchange interaction in atomically controlled ferromagnetic metal (SrRuO 3 )-nonmagnetic insulator (SrTiO 3 ) heterostructures. Owing to the unconventional interlayer exchange interaction, we have observed rotation of spins as a function of nonmagnetic insulating spacer thickness, resulting in a spin spiral state. The chiral phonon–spin coupling is further confirmed by phonon Zeeman effect. The existence of the chiral phonons and their interplay with spins along with our atomic-scale heterostructure approach unveil the crucial roles of chiral phonons in magnetic materials.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2023

Giant proximity exchange and flat Chern band in 2D magnet-semiconductor heterostructures

van der Waals (vdW) heterostructures formed by two-dimensional (2D) magnets and semiconductors have provided a fertile ground for fundamental science and spintronics. We present first-principles calculations finding a proximity exchange splitting of 14 meV (equivalent to an effective Zeeman field of 120 T) in the vdW magnet semiconductor heterostructure MoS 2 /CrBr 3 , leading to a 2D spin-polarized half-metal with carrier densities ranging up to 10 13 cm -2 . We consequently explore the effect of large exchange coupling on the electronic band structure when the magnetic layer hosts chiral spin textures such as skyrmions. A flat Chern band is found at a “magic” value of magnetization $\overline{m}$ ~ 0.2 for Schrödinger electrons, and it generally occurs for Dirac electrons. The magnetic proximity–induced anomalous Hall effect enables transport-based detection of chiral spin textures, and flat Chern bands provide an avenue for engineering various strongly correlated states.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Controlling and visualizing Dirac physics in topological semimetal heterostructures

A bulk crystal of cadmium arsenide is a three-dimensional Dirac semimetal, but, in a thin film, it can behave like a three-dimensional topological insulator. This tunability provides unique opportunities to manipulate and explore a topological insulator phase. However, an obstacle to engineering such tunability is the subtlety of transport-based discriminants for topological phases. In this work, the quantum capacitance of cadmium arsenide–based heterostructures provides two direct experimental signatures of three-dimensional topological insulator physics: an insulating three-dimensional bulk and a Landau level at zero energy that does not disperse in a magnetic field. We proceed to join our ability to see these fingerprints of the topological surface states with flexibility afforded by our epitaxial heterostructures to demonstrate a route toward controlling the energy of the Dirac nodes on each surface. These results point to new avenues for engineering topological insulators based on cadmium arsenide.

36 MATERIALS SCIENCE↗