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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 307 records · Page 17
All sourcesNASA NTRSDOE OSTI
NASA NTRS1986

Thermal-capillary analysis of Czochralski and liquid encapsulated Czochralski crystal growth

Results are presented from finite element analysis of the Czochralski (CZ) and Liquid Encapsulated Czochralski (LEC) crystal growth processes based on a thermal-capillary model which governs the heat transfer in the system simultaneously with setting the shapes of the melt/solid interface, the melt and encapsulant menisci, and the radius of a steadily growing crystal. Calculations are performed for the small-scale growth of silicon (CZ) and gallium arsenide (LEC). The effects of melt volume and crucible position relative to the heater on the radius of the crystal and the shape of the melt/solid interface are predicted for the CZ system, and the importance of including an accurate representation of the melt meniscus for modeling the process is demonstrated. The additional effect of an encapsulant layer on heat transfer is treated for the LEC method for the cases of totally transparent and opaque encapsulant. The responses of these LEC prototype systems are examined for changes in pull rate and encapsulant volume.

Derby, J. J.↗
NASA NTRS1985

High-thermal-gradient Superalloy Crystal Growth

Single, (001)-oriented crystals of PWA 1480 were processed in alumina/silica shell molds in a laboratory high gradient furnace. The furnace employs a graphite resistance heated element, a radiation baffle, and a water cooled radiation trap below the baffle. All crystals were grown in vacuum (10 torr) and all heat transfer was radiative. The element is constructed with a variable cross section that is tapered just above the baffle to maximize heat input and therefore thermal gradient. A maximum alloy temperature of 1600 C was used. A thermal gradient of 130 deg C/cm was recorded at 1370 C just above the solidus of the PWA 1480 alloys. Crystal bars with 14.4 and 17.5 mm diameters were grown in alumina/silica shell molds. Each crystal was started from a 1.6 mm pencil seed at a rate of 76 mm/hr and slowly accelerated to a rate of 200 mm/hr under computer control. Volume percent porosity and average pore size were measured as functions of distance in representative bars. Low cycle fatigue behavior and stress rupture properties were determined.

Pearson, D. D.↗
NASA NTRS2002

DMA Modulus as a Screening Parameter for Compatibility of Polymeric Containment Materials with Various Solutions for use in Space Shuttle Microgravity Protein Crystal Growth (PCG) Experiments

Protein crystals are grown in microgravity experiments inside the Space Shuttle during orbit. Such crystals are basically grown in a five-component system containing a salt, buffer, polymer, organic and water. During these experiments, a number of different polymeric containment materials must be compatible with up to hundreds of different PCG solutions in various concentrations for durations up to 180 days. When such compatibility experiments are performed at NASA/MSFC (Marshall Space Flight Center) simultaneously on containment material samples immersed in various solutions in vials, the samples are rather small out of necessity. DMA4 modulus was often used as the primary screening parameter for such small samples as a pass/fail criterion for incompatibility issues. In particular, the TA Instruments DMA 2980 film tension clamp was used to test rubber O-rings as small in I.D. as 0.091 in. by cutting through the cross-section at one place, then clamping the stretched linear cord stock at each end. The film tension clamp was also used to successfully test short length samples of medical/surgical grade tubing with an O.D. of 0.125 in.

Wingard, Charles Doug↗
NASA NTRS1989

Interaction of surface radiation with convection in crystal growth by physical vapor transport

Growth of single crystals from vapor in closed ampoules is governed by an intricate interplay between mass, momentum and heat transfer processes. The objective of this study is to examine and isolate the effects of surface radiation heat transfer on the vapor transport process using a mathematical model. The model consists of a set of coupled nonlinear partial differential equations for conservation of mass, momentum, energy and species, and the integrodifferential equations which represent radiative exchange. It depends on five important physical parameters. These are Grashof number, Prandtl number, Schmidt number, aspect ratio and the radiation-conduction number. The effects of these dimensionless groupings are systematically investigated. From the cases examined, it is concluded that surface radiation can change the flow structure appreciably. This is especially true in microgravity environment where radiation competes primarily with conduction in modifying the thermal profiles. The numerical results also show that in the presence of radiation, the top heating configuration (source on top) is no longer stable and that near the growing crystal, radiation-induced vortices can introduce significant nonuniformities in the growth flux.

Kassemi, Mohammad↗
NASA NTRS1986

An apparatus for protein crystal growth studies

An apparatus is described for observing protein crystals growing under varying growth conditions, and for changing or manipulating crystal orientation for viewing selected faces or growth modes. This flexibility permits a wide variety of protein crystal growth experiments to be performed using the same crystal(s).

Pusey, Marc L.↗
NASA NTRS1987

Polymer crystal growth facility concept for Space Station laboratory module

Interest in materials processing in space began to evolve in the late 1950's through low gravity simulation and some experiments on Apollo flights. Encouraged by the early results and considerations of the likely behavior of liquids and solidification process in low-gravity gave the recognition that this environment might be useful for a variety of unique processes. This generated a number of experimental ideas and gave rise to the design and development of facilities that will perform the experiments in space vehicles. These include the evolution of apparatus leading to the development of facilities for processing of materials on Skylab and now for the Space Transportation System (STS). The U.S. module on Space Station (SS) is going to expand this unique laboratory environment with practically no constraint on materials processing activity. This will need technology advancement for the hardware that will be required in this era. This presentation discusses the current concept for the experimental facility which will be housed in the U.S. Laboratory module on the Space Station and will allow the growth of single crystals of polymeric and organic materials using the state-of-the-art growth techniques.

Mookherji, Tripty↗
NASA NTRS1975

Solar energy concentrator system for crystal growth and zone refining in space

The technological feasibility of using solar concentrators for crystal growth and zone refining in space has been performed. Previous studies of space-deployed solar concentrators were reviewed for their applicability to materials processing and a new state-of-the-art concentrator-receiver radiation analysis was developed. The radiation analysis is in the form of a general purpose computer program. It was concluded from this effort that the technology for fabricating, orbiting and deploying large solar concentrators has been developed. It was also concluded that the technological feasibility of space processing materials in the focal region of a solar concentrator depends primarily on two factors: (1) the ability of a solar concentrator to provide sufficient thermal energy for the process and (2) the ability of a solar concentrator to provide a thermal environment that is conductive to the processes of interest. The analysis indicate that solar concentrators can satisfactorily provide both of these factors.

Mcdermit, J. H.↗
NASA NTRS1980

Materials of construction for silicon crystal growth

The performance of materials for construction and in contact with molten silicon for crystal growth is presented. The basis for selection considers physical compatibility, such as thermal expansion and strength, as well as chemical compatibility as indicated by contamination of the silicon. A number of new high technology materials are included as well as data on those previously used. Emphasis is placed on the sources and processing of such materials in that results are frequently dependent on the way a material is prepared as well as its intrinsic constituents.

Leipold, M. H.↗
NASA NTRS1987

A comparative study of the influence of buoyancy driven fluid flow on GaAs crystal growth

An experiment on the effect of gravity-driven fluid flow on GaAs crystal growth under a variety of Earth-based conditions and in microgravity aboard the space shuttle is described. Earth-based growth is performed under stabilizing and destabilizing temperature gradients, with and without applied magnetic fields. The space growth experiment is flown in a self-contained payload container through NASA's Get Away Special program. The scope of the experiment and the experimental apparatus are outlined. Results of the Earth-based portions of the experiment are presented.

Kafales, J. A.↗
NASA NTRS1994

Ampoule failure sensor development for semiconductor crystal growth experiments

Currently there are no devices to detect an ampoule failure in semiconductor crystal growth experiments. If an ampoule fails, it will go undetected until the containing cartridge is breached due to chemical degradation. The experiment will then be terminated resulting in a failed experiment and a loss of data. The objective of this research was to develop a reliable failure sensor that would detect a specific liquid or vapor material before the metallic cartridge is degraded and the processing furnace contaminated. The sensor is a chemical fuse made from a metal with which the semiconductor material reacts more rapidly than it does with the containing cartridge. Upon ampoule failure, the sensor is exposed to the vapor or liquid semiconductor and the chemical reaction causes a resistance change in the sensor material. The sensor shows a step change in resistance on the order of megohms when exposed to mercury zinc telluride (HgZnTe), mercury cadmium telluride (HgCdTe), or gallium arsenide (GaAs). This ampoule failure sensor is being tested for possible use on the second United States Microgravity Mission (USML-2) and is the subject of a NASA patent application.

CHEMICAL FUSE↗
NASA NTRS1994

Crystal growth of selected II-VI semiconducting alloys by directional solidification

A Hg(0.84)Zn(0.16)Te alloy crystal was back-melted and partially resolidified during the first United States Microgravity Laboratory (USML-1) mission in the Marshall Space Flight Center's Crystal Growth Furnace. The experiment was inadvertently terminated at about 30% of planned completion. Nonetheless, it was successfully demonstrated that HgZnTe alloy ingots partially grown and quenched on the ground can be back-melted and regrown in space under nearly steady state growth conditions. An identical 'ground-truth' experiment was performed following the mission. Preliminary results are presented for both crystals, as well as for a series of other crystals grown prior to the mission for the purposes of optimizing in-flight growth conditions.

Lehoczky, Sandor L.↗
NASA NTRS1991

Adaptive control of interface by temperature and interface profile feedback in transparent multi-zone crystal growth furnace

The objective of this research is to control the dynamics of multizone programmable crystal growth furnaces. Due to the inevitable heat exchange among different heating zones and the transient nature of the process, the dynamics of multizone furnaces is time varying, distributed, and therefore complex in nature. Electrical power to heating zones and the translational speed of the ampoule are employed as inputs to control the dynamics. Structural properties of the crystal is the ultimate aim of this adaptive control system. These properties can be monitored in different ways. Following an order of complexity, these may include: (1) on line measurement of the material optical properties such as the refractive index of crystal; (2) on line x-ray imaging of the interface topology; (3) on line optical quantification of the interface profile such as the determination of concavity or convexity of the interface shape; and (4) on line temperature measurement at points closest to the material such as measurements of the ampoule's outside and inside surface temperatures. The research performed makes use of the temperature and optical measurements, specified in (3) and (4) as the outputs of furnace dynamics. However, if the instrumentation is available, the proposed control methodology can be extended to the measurements listed in (1) and (2).

Batur, Celal↗
NASA NTRS1992

A numerical model including PID control of a multizone crystal growth furnace

This paper presents a 2D axisymmetric combined conduction and radiation model of a multizone crystal growth furnace. The model is based on a programmable multizone furnace (PMZF) designed and built at NASA Lewis Research Center for growing high quality semiconductor crystals. A novel feature of this model is a control algorithm which automatically adjusts the power in any number of independently controlled heaters to establish the desired crystal temperatures in the furnace model. The control algorithm eliminates the need for numerous trial and error runs previously required to obtain the same results. The finite element code, FIDAP, used to develop the furnace model, was modified to directly incorporate the control algorithm. This algorithm, which presently uses PID control, and the associated heat transfer model are briefly discussed. Together, they have been used to predict the heater power distributions for a variety of furnace configurations and desired temperature profiles. Examples are included to demonstrate the effectiveness of the PID controlled model in establishing isothermal, Bridgman, and other complicated temperature profies in the sample. Finally, an example is given to show how the algorithm can be used to change the desired profile with time according to a prescribed temperature-time evolution.

Panzarella, Charles H.↗
NASA NTRS1984

Properties of TGS aqueous solution for crystal growth

A study has been made of the properties of triglycine sulfate (TGS) aqueous solution relevant to its use for single crystal growth. Measurements of the solubility, index of refraction, density, viscosity, diffusivity, and optical dispersion are presented and discussed. A knowledge of these properties is of importance for controlling and modeling the growth process and for obtaining high quality single crystals.

Kroes, R. L.↗
NASA NTRS1976

Development of low-cost silicon crystal growth techniques for terrestrial photovoltaic solar energy conversion

Because of the growing need for new sources of electrical energy, photovoltaic solar energy conversion is being developed. Photovoltaic devices are now being produced mainly from silicon wafers obtained from the slicing and polishing of cylindrically shaped single crystal ingots. Inherently high-cost processes now being used must either be eliminated or modified to provide low-cost crystalline silicon. Basic to this pursuit is the development of new or modified methods of crystal growth and, if necessary, crystal cutting. If silicon could be grown in a form requiring no cutting, a significant cost saving would potentially be realized. Therefore, several techniques for growth in the form of ribbons or sheets are being explored. In addition, novel techniques for low-cost ingot growth and cutting are under investigation.

Zoutendyk, J. A.↗
NASA NTRS1981

Crystal growth of device quality GaAs in space

Experimental and theoretical efforts in the development of crystal growth approaches, effective techniques for electronic characterization on a macro and microscale, and in the discovery of phenomena and processes relevant to GaAs device applications are reported. The growth of electron trap-free bulk GaAS with extremely low density of dislocations is described. In electroepitaxy, growth configuration which eliminates the substrate back-contact was developed. This configuration can be extended to the simultaneous growth on many substrates with a thin solution layer sandwiched between any two of them. The significant reduction of Joule heating effects in the configuration made it possible to realize the in situ measurement of the layer thickness and the growth velocity. Utilizing the advantages of electroepitaxy in achieving abrupt acceleration (or deceleration) of the growth it was shown that recombination centers are formed as a result of growth acceleration.

Lagowski, J.↗