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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 289 records · Page 16
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Utilizing plant synthetic biology to accelerate plant-microbe interactions research

Plant-microbe interactions are critical to ecosystem resilience and substantially influence crop production. From the perspective of plant science, two important focus areas concerning plant-microbe interactions include: 1) understanding plant molecular mechanisms involved in plant-microbe interfaces and 2) engineering plants for increasing plant disease resistance or enhancing beneficial interactions with microbes to increase their resilience to biotic and abiotic stress conditions. Molecular biology and genetics approaches have been used to investigate the molecular mechanisms underlying plant responses to various beneficial and pathogenic microbes. While these approaches are valuable for elucidating the functions of individual genes and pathways, they fall short of unraveling the complex cross-talk across pathways or systems that plants employ to respond and adapt to environmental stresses. Also, genetic engineering of plants to increase disease resistance or enhance symbiosis with microbes has mainly been attempted or conducted through targeted manipulation of single genes/pathways of plants. Recent advancements in synthetic biology tool development are paving the way for multi-gene characterization and engineering in plants in relation to plant-microbe interactions. Here, we briefly summarize the current understanding of plant molecular pathways involved in plant interactions with beneficial and pathogenic microorganisms. Then, we highlight the progress in applying plant synthetic biology to elucidate the molecular basis of plant responses to microbes, enhance plant disease resistance, engineer synthetic symbiosis, and conduct in situ microbiome engineering. Lastly, we discuss the challenges, opportunities, and future directions for advancing plant-microbe interactions research using the capabilities of plant synthetic biology.

59 BASIC BIOLOGICAL SCIENCES↗
NASA NTRS1974

Dual measurement ablation sensor

A dual measurement ablation sensor for measuring both char-interface and surface recession at a point in an ablating material is described. The sensor permits measurement of the thickness of the char layer. Char-interface recession is indicated by a drop in the resistance to a current passed through the ablation material. Surface recession is indicated by the closing of an electrical circuit when melting causes the release of a spring switch.

Gurtler, C. A.↗
NASA NTRS1982

Non-isothermal effects on SO2 absorption by water droplets. I - Model development. II - Results and discussion

An analytic model of SO2 absorption in a falling water droplet is developed and a simulation of SO2 washout is performed. Nonisothermic effects on drop growth, droplet physical parameters, reaction rates, and multicomponent diffusion are treated in the model. The gas-liquid interface is assumed to be at equilibrium, and interfacial resistance is negligible. Raindrops are simulated as falling from a 2 km height through an atmospheric region containing SO2. The droplets decrease in size from evaporation and cooling, and their slightly basic pH aids SO2 absorption. The simulation indicates higher SO2 absorption at higher altitudes, and desorption may occur at ground level. Isothermal effects are concluded to be significant, and quantification of effects will depend on further modelling.

Reda, M.↗
DOE OSTI2023

An Interface–Type Memristive Device for Artificial Synapse and Neuromorphic Computing

Interface-type (IT) metal/oxide Schottky memristive devices have attracted considerable attention over filament-type (FT) devices for neuromorphic computing because of their uniform, filament-free, and analog resistive switching (RS) characteristics. The most recent IT devices are based on oxygen ions and vacancies movement to alter interfacial Schottky barrier parameters and thereby control RS properties. However, the reliability and stability of these devices have been significantly affected by the undesired diffusion of ionic species. Herein, a reliable interface-dominated memristive device is demonstrated using a simple Au/Nb-doped SrTiO 3 (Nb:STO) Schottky structure. The Au/Nb:STO Schottky barrier modulation by charge trapping and detrapping is responsible for the analog resistive switching characteristics. Because of its interface-controlled RS, the proposed device shows low device-to-device, cell-to-cell, and cycle-to-cycle variability while maintaining high repeatability and stability during endurance and retention tests. Furthermore, the Au/Nb:STO IT memristive device exhibits versatile synaptic functions with an excellent uniformity, programmability, and reliability. A simulated artificial neural network with Au/Nb:STO synapses achieves a high recognition accuracy of 94.72% for large digit recognition from MNIST database. These results suggest that IT resistive switching can be potentially used for artificial synapses to build next-generation neuromorphic computing.

36 MATERIALS SCIENCE↗
DOE OSTI2024

On plasticity-enhanced interfacial toughness in bonded joints

Here, the performance and reliability of many structures and components depend on the integrity of interfaces between dissimilar materials. Interfacial toughness Γ is the key material parameter that characterizes resistance to interfacial crack growth, and Γ is known to depend on many factors including temperature. For example, previous work showed that the toughness of an epoxy/aluminum interface decreased 40 % as the test temperature was increased from -60 °C to room temperature (RT). Interfacial integrity at elevated temperatures is of considerable practical importance. Recent measurements show that instead of continuing to decrease with increasing temperature, Γ increases when test temperature is above RT. Cohesive zone finite element calculations of an adhesively bonded, asymmetric double cantilever beam specimen of the type used to measure Γ suggest that this increase in toughness may be a result of R-curve behavior generated by plasticity-enhanced toughening during stable subcritical crack growth with interfacial toughness defined as the critical steady-state limit value. In these calculations, which used an elastic-perfectly plastic epoxy model with a temperature-dependent yield strength, the plasticity-enhanced increase in Γ above its intrinsic value Γ o depended on the ratio of interfacial strength σ* to the yield strength σyb of the bond material. There is a nonlinear relationship between Γ/Γ o and σ*/σ yb with the value Γ/Γ o increasing rapidly above a threshold value of σ*/σ yb . The predicted increase in toughness can be significant. For example, there is nearly a factor of two predicted increase in Γ/Γ o during micrometer-scale crack-growth when σ*/σ yb = 2 (a reasonable choice for σ*/σ yb ). Furthermore, contrary to other reported results, plasticity-enhanced toughening can occur prior to crack advance as the cohesive zone forms and the peak stress at the tip of the original crack tip translates to the tip of the fully formed cohesive zone. These results suggest that plasticity-enhanced toughening should be considered when modeling interfaces at elevated temperatures.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Positive spin Hall magnetoresistance in single-crystalline Pt/CoO(001) bilayers

Here, the spin Hall magnetoresistance (SMR) effect in single-crystalline Pt/CoO(001) bilayers has been systematically investigated. X-ray magnetic linear dichroism measurements prove that CoO antiferromagnetic (AFM) spins can be switched into the direction orthogonal to the applied field. We find the SMR signal is comprised of two components related to either the switching of CoO AFM Néel order or the applied strong field effect. Both SMR components show a “positive” angular dependence with $R_{∥} > R_{⊥}$, while $R_{∥} (R_{⊥})$ is defined as the resistance with the applied in-plane field parallel (perpendicular) to the current. The observed positive SMR is mainly attributed to the uncompensated spins at the Pt/CoO interface, instead of the CoO AFM spins. Our study may attract a great deal of interest to understand the complicated SMR effect in AFM spintronics materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1990

Microcracking mechanisms and interface toughening of semi-IPN polyimide matrix composites

A new research program was initiated as a preliminary phase. The following three objectives are being pursued for the overall program: to elucidate the mechanisms of microcracking for graphite fiber-reinforced semi-IPN polyimide matrix composites under mechanical and thermal cyclic loading; to devise material engineering solutions for possible improvement of fatigue damage resistance (or the increase of fatigue endurance strength) of semi-IPN matrix composites by tailoring of modulus and toughness of fiber-resin interface region; and to assess processing characteristics of the composites and their roles in controlling the resistance of composites to microcracking and the effectiveness of interface toughening. The main emphasis was placed upon the initial screening of material systems and optimization of processing conditions for semi-IPN matrix composites with tailored interface. As a first set of control material systems to study, the composites were prepared with unsized Celion 6000 graphite fiber reinforcement and the following resin matrices of varied fracture toughness: PMR-15 thermoset polyimide, semi-IPN of PNR-15 thermoset polyimide and NR150B2 thermoplastic polyimide in 75/25 ratio, and semi-IPN of PMR-15 and NR150B2 in 50/50 ratio. For the composites with the resin matrix of semi-IPN in 75/25 ratio, interface tailoring was attempted by using graphite fibers coated with the resins of systematically varied fracture toughness. In the continuing work, a broad range of interlayer toughness will be achieved by coating the fibers with reactants of semi-IPN having lower or higher content of thermoplastic constituent in comparison with the composition of surrounding resin matrix. In pursuing the objectives of the overall research program, the respective roles and interaction of critical parameters were defined.

Lee, Byung L.↗
DOE OSTI2022

How the Hydrophobic Interface between a Perfluorosulfonic Acid Polymer and Water Vapor Controls Membrane Hydration

Stable hydration in perfluorinated polyelectrolyte membranes such as Nafion is essential to maintain good ion conductivity and manage permeation, especially in vapor-fed devices where water content depends on relative humidity in a gas stream. Extensive studies in the literature have shown that Nafion hydration in water vapor is controlled by its interfacial transport resistance. Nafion forms a fluorine-rich layer at the polymer-gas interface, and it has been proposed that this layer blocks water transport due to its hydrophobicity. To develop a molecular-level description of the physics underlying transport resistance in this system, we have performed a computational reaction-diffusion kinetics study of water evaporation from Nafion. Two distinct models are examined, one mimicking the blocking function proposed in the literature and the other assuming that there is no blocking, treating instead water evaporation as a dynamic balance between uptake from the gas and desorption from the polymer surface. Simulation results are compared to time-dependent infrared data over a range of 100-0% relative humidity from the literature. Only the dynamic model successfully reproduces experimental observations. This indicates that the physical nature of interfacial transport resistance is not slow diffusion across an interfacial layer; rather, it is due to the competition between dehydration and rehydration. The simulation data provide details on the accompanying water distributions throughout the membrane and on interfacial kinetics, showing that they are characterized by strong fluctuations.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS2000

Key Durability Issues with Mullite-Based Environmental Barrier Coatings for Si-Based Ceramics

Plasma-sprayed mullite (3Al2O3.2SiO2) and mullite/yttria-stabilized-zirconia (YSZ) dual layer coatings have been developed to protect silicon -based ceramics from environmental attack. Mullite-based coating systems show excellent durability in air. However, in combustion environments, corrosive species such as molten salt or water vapor penetrate through cracks in the coating and attack the Si-based ceramics along the interface. Thus the modification of the coating system for enhanced crack-resistance is necessary for long-term durability in combustion environments. Other key durability issues include interfacial contamination and coating/substrate bonding. Interfacial contamination leads to enhanced oxidation and interfacial pore formation, while a weak coating/substrate bonding leads to rapid attack of the interface by corrosive species, both of which can cause a premature failure of the coating. Interfacial contamination can be minimized by limiting impurities in coating and substrate materials. The interface may be modified to improve the coating/substrate bond.

Lee, Kang N.↗
DOE OSTI2024

Effect of H + Exchange and Surface Impurities on Bulk and Interfacial Electrochemistry of Garnet Solid Electrolytes

Contact loss and current constriction pose significant challenges at the Li metal interface of solid-state batteries. For garnet-structured Li 7 La 3 Zr 2 O 12 (LLZO), these effects are amplified by Li + /H + exchange and surface contamination reactions, which lead to conductivity losses and poor Li wetting. In this study, we utilize a variety of surface treatment processes across 37 cells to selectively induce proton exchange and contamination reactions in LLZO. The resulting bulk and surface chemistry is systematically characterized and correlated to changes in electrochemical properties. Additionally, we combine impedance analysis and finite element method modeling to deconvolute sources of impedance contributions at the Li metal interface. Specifically, we show that constriction impedance at the Li metal interface arises not solely from voids, but also from ionically-resistive surface contaminants. Further, these findings emphasize the connection between ionic conductivity and constriction, demonstrating that micron-scale ionically-resistive components increase constriction even with identical contact geometries. Finally, we leverage our comprehensive dataset to highlight unstable overpotential growth as a failure mechanism, additionally showing that the phase of a cell’s impedance is a sensitive indicator for the onset of interfacial instability. Overall, this study clarifies the impacts of proton exchange and surface contamination on electrochemical properties at the Li|solid electrolyte interface and elucidates insights that are generalizable to other solid-state battery systems.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Low Impedance Cathode/Electrolyte Interfaces for High Energy Density Solid-State Batteries

All-solid-state batteries (ASSBs) using a ceramic fast Li-ion conductor as a solid-state electrolyte (SSE) have been proposed as a promising strategy to significantly increase the energy density of lithium batteries. Due to their high ion conductivity and excellent stability, Li-stuffed garnets exhibit the most promising physical and chemical properties for SSEs. However, the typical microstructure, thick (>100 μm) bulk electrolyte and simple planar electrode/electrolyte interfaces, combined with poor electrode wetting of the garnet result in excessively high area specific resistances (ASRs) that severely limit achievable current density and cell energy density. In this project, the team is building on their demonstrated expertise with garnet electrolytes and ASSBs to accomplish the following: (1) engineer interfaces to overcome high NMC/LLZ interfacial impedance and interfacial degradation; (2) develop processing and fabrication techniques to achieve high loading NMC/LLZ composite cathodes with low resistance and high cyclability; and (3) integrate the NMC/LLZ cathodes into all-solid-state Li-metal/LLZ cells to achieve high-energy-density batteries.

25 ENERGY STORAGE↗
DOE OSTI2022

Formation of misfit dislocation arrays and helium nanochannels near copper surface assisted by high-temperature graphene deposition

Misfit dislocation arrays (MDAs) at semi-coherent heterogeneous interface have been demonstrated effectiveness to trap and then outgas helium (He) for alleviating void swelling in metals, but limited by atomic-level thin film deposition that is difficult to scale-up for industrial production. In this work, we proposed an innovative strategy that could generate semi-coherent homophase interfaces in a same grain by varying surface energy density assisted by high-temperature graphene (Gr) deposition. This strategy transforms strain energy and surface energy, two originally distinctive processes into successive processes, and demonstrates experimentally and theoretically by introducing {111} copper (Cu) in a {100} Cu grain. Subsequent He implantation and electrical resistivity measurement results suggest that high-density MDAs originated at this {111}/{100} interface could form stable He nanochannels near Cu surface with Gr assistance, manifesting by ultra-low increased ratio of the electrical resistivity (i.e. ~3800% of Cu vs. ~90% of Gr/Cu) after He implantation. Finally, the present findings may provide a new strategy for efficiently managing He and achieving surface protection of advanced metals, merely by depositing a super-rigid material on metal surface to greatly reduce surface energy density.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Unveiling the influence of selective-area-regrowth interfaces on local electronic properties of GaN p-n junctions for efficient power devices

Here, we report correlated nanoscale mapping of the structure, composition, and properties of regrown GaN p-n junctions to identify how etching and non-planar regrowth processes limit diode performance via the introduction of unintentional dopants and defect states. p-GaN was selectively regrown in n-GaN trenches with SiO 2 masks of variable mask-to-trench-width ratio. Dilute Al layers were periodically introduced during regrowth as markers of the growth interface. Correlated nanoscale mapping of doping, conductivity, and dopant complexes was achieved with atom probe tomography (APT), scanning spreading resistance microscopy (SSRM), and cathodoluminescence (CL) spectroscopy, respectively. The Al marker layers, detected by APT, enabled reconstruction of the faceted growth interface and correlation of the dopant concentration with position and time. The p-GaN growth rate is proportional to the mask-to-trench width ratio while the dopant incorporation rate is invariant. At trench edges, magnesium incorporation is suppressed, and oxygen incorporation enhanced, due to preferential incorporation on the semi-polar growth surface, leading to compensation and less abrupt p-n junctions; the SiO 2 mask is a source of oxygen. Residual etch damage below the regrowth interface induces n-type and p-type conductivity, creating leakage pathways. The non-uniform Mg incorporation is driven by crystal anisotropy and is thus inherent to non-planar regrowth, but can be mitigated by engineering the regrowth interface and process parameters. The unprecedented integration of spatially resolved mapping of dopants, impurities, conductivity, and carrier type is a powerful approach to discriminating distinct factors that limit the performance of regrown diodes, enabling the rational optimization of process and device design.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Interlayer reinforcement of 3D printed concrete by the in-process deposition of U-nails

Highlights: • An in-process interlayer reinforcement approach for 3D concrete printing was proposed through the concurrent deposition of U-nails. • Significant strength and toughness improvement was achieved for U-nail reinforced 3D-printed concrete. • The bridge linking effect and dowel action of U-nails were analysed. • Response surface method were utilised to quantify the effects of U-nails on the interlayer bonding behaviour. 3D concrete printing has tremendous potential for construction manufacturing; however, weak interface bonding between adjacent layers remains a well-known issue that affects the mechanical properties of printed structures. The layers introduce anisotropy and reduce the capacity to resist tensile and shear loads. Reinforcements, inserted perpendicular to the printed layers to traverse the interfaces, can improve these limitations, but the insertion of reinforcements is difficult to achieve in practice, and there are few published studies exploring appropriate methods. This study presents a promising approach using U-shaped nails inserted into concrete during the printing process. The bridging effect and dowel action of the applied U-nails are visualised and analysed to elucidate the toughness improvement. The ultimate tensile strength and shear strength of 3D printed concrete are significantly increased by 145.0% and 220.0%, respectively. U-nails with a filament thickness of 2–2.5 mm are recommended to yield optimal improvement in the interlayer strength.

36 MATERIALS SCIENCE↗
NASA NTRS1977

Vibration-resistant PC board feedthrough

New fabrication method uses annealed-nickel ribbon loop to interface coaxial input (or output) connector to printed-wiring board. Inexpensive ribbon interface cuts vibration-induced failure between coaxial cable and printed-wiring board.

Mandel, H.↗
DOE OSTI2020

Understanding resistances in capacitive deionization devices

The desalination characteristics of capacitive deionization (CDI) are significantly impacted by the cell resistance. Here we apply electrochemical impedance spectroscopy (EIS) to analyze the resistive properties of a CDI device, which include EIS measurements on a complete assembled cell (in two wire mode) and EIS measurements with additional contacts to decouple electrode/electrolyte and contact impedances (four wire mode). These measurements shed light on the interface between current collector and electrode as well as the internal capacitive and resistive elements of the cell. With two-wire and four-wire EIS measurements, we find that the often observed high-frequency arc(s) in the impedance spectra can be due to contact effects and/or an internal ionic-transfer resistance that is locally in parallel with macropore wall capacitance. In some cases, the two associated arcs in the Nyquist plot are overlapping and present simultaneously, making their identification in the EIS spectra difficult unless both two-wire and four-wire measurements are made. Despite causing a large high-frequency arc in the Nyquist plot, we find that the apparent internal ionic-transfer resistance is negligible compared to the resistances of the electrode, separator, and external electronic components. Here, an investigation of the contact impedance between the electrode and current collector reveals a parallel RC arc that can grow over time if an improper material is used (e.g., titanium). In our system, the electrode ionic resistance dominates the total Ohmic power dissipation, which has implications for scale-up of CDI systems and future improvements of cell design.

36 MATERIALS SCIENCE↗