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At least 289 records · Page 16
All sourcesNASA NTRSDOE OSTI
NASA NTRS2005

Future Directions for Thin Films in Space Workshop at SPRAT XVIII

For approximately ten years, the SPRAT conference series at NASA Glenn (formerly Lewis) Research Center has devoted a workshop to the topic of thin-film solar cell technology and its potential for space applications. While thin-film materials have been investigated for a number of years, including copper sulfide research at NASA in the 1960 s, there has been a re-birth of interest in this class of materials for space applications in the past dozen years or so. There are several reasons for this renaissance. An important contributor is efficiency improvements beyond ten percent. Another contributor is the increase in interest represented by funding opportunities by NASA and several agencies in the U.S. Department of Defense (Missile Defense Agency, Air Force, and DARPA). Finally, there have been several intriguing missions identified through various means, these include: station-keeping for high-altitude airships, space solar power, planetary surface power, and solar electric propulsion. To aid in leading the discussion for this workshop, a series of seven questions were posed. These are reproduced below as well as a summary of key points and conclusions from the workshop as well as an attendees list and results of an informal poll related to long-term potential of thin films for space.

Hepp, Aloysius F.↗
NASA NTRS1990

Preparation and characteristics of superconducting cuprate thin films: Nd(2-x)Ce(x)CuO4 and substituted Bi-system

Characteristics of the electron-doped-type Nd(2-x)Ce(x)CuO4 systems and substituted Bi2(Sr,Ln)3Cu2Oy system were systematically studied using the high quality thin-film samples. The Nd(2-x)Ce(x)CuO4 thin films with various Ce concentrations, x, were prepared by RF magnetron sputtering on SrTiO3 heated at around 500 C. After subsequent annealing at 1100 C in air, the films showed the c-axis orientation normal to the substrates. By means of the reducing treatment (annealing in a vacuum), superconductivity was induced for the films with 0.14 is less than or equal to x is less than or equal to 0.18. The superconductivity and transport properties of the films were strongly affected by the reducing treatment. The x = 0.15 film exhibited a sharp superconducting transition with zero resistivity at 22 K, in consistent with the diamagnetic properties. The resistivity of the films was fairly low with metallic characteristics, and the sight of the Hall coefficient was negative in the normal state. On the other hand, the normal-state optical measurements showed that the undoped Nd2CuO4 is a semiconductor with a charge transfer gap of 1.3 eV, and that, when Ce ions were doped, a plasma reflection due to the free-carriers came to be seen with the plasma frequency of 1.07 eV for 0.14 is less than or equal to x is less than or equal to 0.18. Moreover, x ray photoemission study revealed that the Cu valence of the film decreased for 2(+) for x = 0 to 1(+) for x = 0.15. These physical properties are in contrast with those of hole-doped-type cuprate superconductors. Bi2(Sr,Ln)3Cu2Oy thin films were also prepared on MgO substrates heated at 600 to 700 C by similar methods. It was found that the growth conditions for Bi-systems with two CuO2 planes were different for each composition and species of lanthanoid in the films. Moreover, preparation of Bi-system with three CuO2 planes was very difficult when lanthanoid atoms were doped in the system. Their electric transport properties and x ray photoemission spectroscopy were investigated. Carrier concentration and Cu valence were discussed with regard to the superconductivity.

Adachi, H.↗
NASA NTRS1973

Carbon thin film thermometry

The work concerning carbon thin film thermometry is reported. Optimum film deposition parameters were sought on an empirical basis for maximum stability of the films. One hundred films were fabricated for use at the Marshall Space Flight Center; 10 of these films were given a precise quasi-continuous calibration of temperature vs. resistance with 22 intervals between 5 and 80 K using primary platinum and germanium thermometers. Sensitivity curves were established and the remaining 90 films were given a three point calibration and fitted to the established sensitivity curves. Hydrogen gas-liquid discrimination set points are given for each film.

Collier, R. S.↗
NASA NTRS1974

System for depositing thin films

A system for depositing a thin film of one material on another is described. A mass filter is interposed between the source of material being deposited and the object upon which deposition is being made.

Tashbar, P. W.↗
NASA NTRS1982

Thin film temperature sensors, phase 3

A thin film thermocouple system installation suitable for engine test evaluation was designed, and an engine test plan was prepared. Film adherence, durability, accuracy, and drift characteristics were improved. Film thickness was increased to 14 microns, and drift was reduced to less than 0.02 percent of Fahrenheit temperature per hour on actual turbine blades at 1255 K.

Grant, H. P.↗
NASA NTRS1985

Thin film coatings for improved alpha/epi

New thin film coatings were developed for fused silica, ceria doped glass, and Corning 0211 microsheet which provide increased emissivity and/or decreased solar absorption. Emissivity is enhanced by suppression of the reststrahlen reflectance and solar absorption is reduced by externally reflecting the ultraviolet portion of the solar spectrum. Optical properties of these coatings make them suitable for both solar cell cover and thermal control mirror applications. Measurements indicate equivalent environmental performance to conventional solar cell cover and thermal control mirror products.

Krisl, M. E.↗
NASA NTRS1986

Thermal and structural stability of cosputtered amorphous Ta(x)Cu(1-x) alloy thin films on GaAs

The characteristics of thin films of Ta-Cu, prepared over a wide range of compositions by cosputter deposition onto GaAs and fused quartz substrates, are studied by X-ray diffraction and van der Pauw resistivity measurement. Results show films to be amorphous over the range of 55-95 at. pct, and show Ta(93)Cu(7) barriers to be effective in preventing Au in-diffusion, with a 3000-A layer remaining unpenetrated after an annealing at 700 C for 20 min. Diffusion of Ga and/or As into amorphous 93 at. pct Ta is found to be more rapid than that of Au, and interfacial reactions were shown to form compounds including Ta3Au, CuAu, TaAs2, and Ga3Cu7 above 700 C.

Oh, J. E.↗
NASA NTRS1989

Highly oriented Tl2Ba2Ca2Cu3O10 thin films by pulsed laser evaporation

Superconducting thin films on MgO (100) substrates with nearly pure Tl2Ba2Ca2Cu3O10 (2:2:2:3) phase using pulsed laser evaporation and postannealing have been fabricated. The films had c axes perpendicular to the substrates. Superconducting films with onset temperatures of 125 K and zero resistance at 110 K were obtained. X-ray microprobe fluorescence measurements indicate that a typical composition of films is Tl(0.66)Ba(1.77)Ca(1.46)Cu3O(x) which is low in Tl compared to that expected for the 2:2:2:3 phase. A typical grain size is greater than 10 microns revealed by scanning electron microscopy.

Liou, S. H.↗
NASA NTRS1990

Photoresponse of YBa2Cu3O(7-delta) granular and epitaxial superconducting thin films

The response is reported of thin films of YBa2Cu3O(7-delta) with either a very grainy or a smooth epitaxial morphology to visible radiation. SrTiO3 substrates were employed for both types of films. The grainy films were formed by sequential multi-layer electron beam evaporation while the epitaxial films were formed by laser ablation. Both films were patterned into H shaped detectors via a negative photolithographic process employing a Br/ethanol etchant. The bridge region of the H was 50 microns wide. The patterned films formed by laser ablation and sequential evaporation had critical temperatures of 74 K and 72 K respectively. The bridge was current biased and illuminated with chopped He-Ne laser radiation and the voltage developed in response to the illumination was measured. A signal was detected only above the critical temperature and the peak of the response coincided with the resistive transition for both types of films although the correspondence was less exact for the grainy film. The details of the responses and their analysis are presented.

Valco, G. J.↗