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At least 289 records · Page 16

The Space Laser Business Model

Creating long-duration, high-powered lasers, for satellites, that can withstand the type of optical misalignment and damage dished out by the unforgiving environment of space, is work that is unique to NASA. It is complicated, specific work, where each step forward is into uncharted territory. In the 1990s, as this technology was first being created, NASA gave free reign to a group of "laser jocks" to develop their own business model and supply the Space Agency with the technology it needed. It was still to be a part of NASA as a division of Goddard Space Flight Center, but would operate independently out of a remote office. The idea for this satellite laboratory was based on the Skunk Works concept at Lockheed Martin Corporation. Formerly known as the Lockheed Corporation, in 1943, the aerospace firm, realizing that the type of advanced research it needed done could not be performed within the confines of a larger company, allowed a group of researchers and engineers to essentially run their own microbusiness without the corporate oversight. The Skunk Works project, in Burbank, California, produced America s first jet fighter, the world s most successful spy plane (U-2), the first 3-times-the-speed-of-sound surveillance aircraft, and the F-117A Nighthawk Stealth Fighter. Boeing followed suit with its Phantom Works, an advanced research and development branch of the company that operates independent of the larger unit and is responsible for a great deal of its most cutting-edge research. NASA s version of this advanced business model was the Space Lidar Technology Center (SLTC), just south of Goddard, in College Park, Maryland. Established in 1998 under a Cooperative Agreement between Goddard and the University of Maryland s A. James Clark School of Engineering, it was a high-tech laser shop where a small group of specialists, never more than 20 employees, worked all hours of the day and night to create the cutting- edge technology the Agency required of them. Drs. Robert Afzal and Joseph Dallas were directors of the SLTC, and led the development and production of active spaceborne, remote-sensing, optical instruments. As a pioneer in the area of photonics, Dr. Dallas led basic research, development, and production of semiconductor laser diode products, improving coupling efficiency through novel physical optics modeling and intracavity phase-correction techniques. He worked for NASA for 15 years, 11 of which were as a civil servant, and 4 of which were as a contractor.

Source record↗

Every Good Virtue You Ever Wanted in a Q-switched Solid-state Laser and More: Monolithic, Diode-pumped, Self-q-switched, Highly Reproducible, Diffraction-limited Nd:yag Laser

The applications of Q-switched lasers are well known, for example, laser radar, laser remote sensing, satellite orbit determination, Moon orbit and 'moon quake' determination, satellite laser communication, and many nonlinear optics applications. Most of the applications require additional properties of the Q-switched lasers, such as single-axial and/or single-transverse mode, high repetition rate, stable pulse shape and pulse width, or ultra compact and rugged oscillators. Furthermore, space based and airborne lasers for lidar and laser communication applications require efficient, compact, lightweight, long-lived, and stable-pulsed laser sources. Diode-pumped solid-state lasers (DPSSL) have recently shown the potential for satisfying all of these requirements. We will report on the operating characteristics of a diode-pumped, monolithic, self-Q-switched Cr,Nd:YAG laser where the chromium ions act as a saturable absorber for the laser emission at 1064 nm. The pulse duration is 3.5 ns and the output is highly polarized with an extinction ratio of 700:1. It is further shown that the output is single-longitudinal-mode with transform-limited spectral line width without pulse-to-pulse mode competition. Consequently, the pulse-to-pulse intensity fluctuation is less than the instrument resolution of 0.25 percent. This self-stabilization mechanism is because the lasing mode bleaches the distributed absorber and establishes a gain-loss grating similar to that used in the distributed feedback semiconductor lasers. A repetition rate above 5 KHz has also been demonstrated. For higher power, this laser can be used for injection seeding an amplifier (or amplifier chain) or injection locking of a power oscillator pumped by diode lasers. We will discuss some research directions on the master oscillator for higher output energy per pulse as well as how to scale the output power of the diode-pumped amplifier(s) to multi-kilowatt average power.

Chen, Y. C.↗

THIS: A Next Generation Tuneable Heterodyne Infrared Spectrometer for SOFIA

A new infrared heterodyne instrument has been developed which allows the use of both tuneable diode lasers (TDL) and quantum cascade lasers (QCL) as local oscillators (LO). The current frequency tuning range of our system extends from 900 to 1100/cm depending on the availability of lasers but is planned to be extended to 600/cm soon. The IF-bandwidth is 1.4 GHz using an acousto-optical spectrometer (AOS). The frequency resolution and stability of the system is approximately 10(exp 7). Currently, mercury-cadmium-telluride (MCT) detectors are used as mixers while new devices like quantum-well-infrared-photodetectors (QWIP) and hot-electron-bolometers (HEB) are investigated. The IF-bandwidth can be extended to about 3 GHz by using a new broadband acousto-optical spectrometer presently under development. The instrument is fully transportable and can be attached to any infrared or optical telescope. The semiconductor laser is stabilized to a Fabry-Perot ring-resonator, which is also used as an efficient diplexer to superimpose the local-oscillator and the signal radiation. As a first step measurements of trace gases in Earth's atmosphere and non-LTE emission from Venus' atmosphere were carried out as well as observations of molecular features in sunspots. Further astronomical observations from ground-based telescopes and the airborne observatory SOFIA are planned for the future. Of particular interest are molecules without a permanent dipole moment like H2, CH4, C2H2 etc.

Sonnabend, Guido↗

Rapid Switching and Modulation by use of Coupled VCSELs

Devices incorporating coupled vertical-cavity surface-emitting lasers (VCSELs) have been proposed as means to effect unprecedentedly rapid modulation and/or switching of light beams in advanced optical communication and information-processing systems. A basic device according to the proposal would comprise two or more VCSELs (1) positioned so close to each other that they are coupled and (2) connected to a current source that biases them at a steady current above the threshold current for lasing. The operation of VCSELs under the conditions stated above has been simulated computationally with an algorithm that solves an approximation of the Maxwell-Bloch equations. (These are nonlinear coupled partial differential equations that model the relevant aspects of the physics of semiconductor lasers.) The results of the simulations show that the intensities of the beams oscillate, out of phase relative to each other, at a frequency that is typically of the order of tens of gigahertz. In particular, one simulation was performed for two coupled VCSELs, each having a circular aperture 5.6 microns in diameter, operating at a wavelength of 980 nm. The results of the simulation showed that the intensities of the two beams oscillated in opposite phase (see Figure 1) at a frequency of 42 GHz. In the far field, the beams were found to be separated by an angle of approx.=8deg. The intensities of the beams were also found to oscillate in the near field, 90deg out of phase with the oscillation in the far field. Figure 2 depicts a simple near-field switching device in which an assembly of microlenses would couple the two oscillating beams to two receivers.

Goorjian, Peter M.↗

Miniature Trace Gas Detector Based on Microfabricated Optical Resonators

While a variety of techniques exist to monitor trace gases, methods relying on absorption of laser light are the most commonly used in terrestrial applications. Cavity-enhanced absorption techniques typically use high-reflectivity mirrors to form a resonant cavity, inside of which a sample gas can be analyzed. The effective absorption length is augmented by the cavity's high quality factor, or Q, because the light reflects many times between the mirrors. The sensitivity of such mirror-based sensors scales with size, generally making them somewhat bulky in volume. Also, specialized coatings for the high-reflectivity mirrors have limited bandwidth (typically just a few nanometers), and the delicate mirror surfaces can easily be degraded by dust or chemical films. As a highly sensitive and compact alternative, JPL is developing a novel trace gas sensor based on a monolithic optical resonator structure that has been modified such that a gas sample can be directly injected into the cavity. This device concept combines ultra-high Q optical whispering gallery mode resonators (WGMR) with microfabrication technology used in the semiconductor industry. For direct access to the optical mode inside a resonator, material can be precisely milled from its perimeter, creating an open gap within the WGMR. Within this open notch, the full optical mode of the resonator can be accessed. While this modification may limit the obtainable Q, calculations show that the reduction is not significant enough to outweigh its utility for trace gas detection. The notch can be milled from the high- Q crystalline WGMR with a focused ion beam (FIB) instrument with resolution much finer than an optical wavelength, thereby minimizing scattering losses and preserving the optical quality. Initial experimental demonstrations have shown that these opened cavities still support high-Q whispering gallery modes. This technology could provide ultrasensitive detection of a variety of molecular species in an extremely compact and robust package. With this type of modified WGMR, one can inject a gas sample into the open gap, allowing highly sensitive trace molecule detection within a roughly 1-cm volume. Other critical components of the instrument, such as the detector and a semiconductor laser, could be directly packaged with the resonator so as to not significantly increase the size of the device. Besides its low mass, volume, and power consumption, the monolithic design makes these resonators intrinsically robust devices, capable of handling significant temperature excursions, without moving parts to wear out or delicate coatings that can be easily damaged. A sensor could integrate with microfluidics technology for a chip-scale device. It could be mounted to the end of a deployable arm, or inserted into a borehole. Also, a network of individual sensors could be dispersed to monitor conditions over a wide region

Aveline, David C.↗

Room Temperature Lasing from Semiconducting Single-Walled Carbon Nanotubes

Miniaturized near-infrared semiconductor lasers that are able to generate coherent light with low energy consumption have widespread applications in fields such as optical interconnects, neuromorphic computing, and deep-tissue optogenetics. With optical transitions at near-infrared wavelengths, diameter-tunable electronic structures, and superlative optoelectronic properties, semiconducting single-walled carbon nanotubes (SWCNTs) are promising candidates for nanolaser applications. However, despite significant efforts in this direction and recent progress toward enhancing spontaneous emission from SWCNTs through Purcell effects, SWCNT-based excitonic lasers have not yet been demonstrated. Leveraging an optimized cavity-emitter integration scheme enabled by a self-assembly process, here we couple SWCNT emission to the whispering gallery modes supported by polymer microspheres, resulting in room temperature excitonic lasing with an average lasing threshold of 4.5 kW/cm 2 . The high photostability of SWCNTs allows stable lasing for prolonged duration with minimal degradation. Finally, this experimental realization of excitonic lasing from SWCNTs, combined with their versatile electronic and optical properties that can be further controlled by chemical modification, offers far-reaching opportunities for tunable near-infrared nanolasers that are applicable for optical signal processing, in vivo biosensing, and optoelectronic devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Integrated optical frequency division for microwave and mmWave generation

Abstract The generation of ultra-low-noise microwave and mmWave in miniaturized, chip-based platforms can transform communication, radar and sensing systems 1–3 . Optical frequency division that leverages optical references and optical frequency combs has emerged as a powerful technique to generate microwaves with superior spectral purity than any other approaches 4–7 . Here we demonstrate a miniaturized optical frequency division system that can potentially transfer the approach to a complementary metal-oxide-semiconductor-compatible integrated photonic platform. Phase stability is provided by a large mode volume, planar-waveguide-based optical reference coil cavity 8,9 and is divided down from optical to mmWave frequency by using soliton microcombs generated in a waveguide-coupled microresonator 10–12 . Besides achieving record-low phase noise for integrated photonic mmWave oscillators, these devices can be heterogeneously integrated with semiconductor lasers, amplifiers and photodiodes, holding the potential of large-volume, low-cost manufacturing for fundamental and mass-market applications 13 .

Science & Technology - Other Topics↗

Pushing the performance limits of long wavelength interband cascade lasers using innovative quantum well active regions

Here, we report significantly enhanced device performance in long wavelength interband cascade lasers (ICLs) by employing a recently proposed innovative quantum well (QW) active region containing strained InAsP layers. These ICLs were able to operate at wavelengths near 14.4 μm, the longest ever demonstrated for III–V interband lasers, implying great potential of ICLs to cover an even wider wavelength range. Also, by applying the aforesaid QW active region configuration on ICLs at relatively short wavelengths, ICLs were demonstrated at a low threshold current density (e.g., 13 A/cm 2 at 80 K) and at temperatures up to 212 K near 12.4 μm, more than 50 K higher than the previously reported ICLs with the standard W-shape QW active region at similar wavelengths. This suggests that the QW active region with InAsP layers can be used to improve device performance at the shorter wavelengths.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Ultrafast carrier dynamics in multiple quantum well p–i–n photodiodes

Quantum well (QW) structures are widely used in lasers, semiconductor optical amplifiers, and modulators, enabling their monolithic integration on the same substrate. As optoelectronic systems evolve to meet the growing bandwidth demands in the terahertz regime, a deep understanding of ultrafast carrier dynamics in QW structures becomes essential. We introduce a comprehensive model to analyze the ultrafast dynamics of interband photo-excited carriers in QW p–i–n structures and to calculate their frequency response. This model characterizes the entire photocarrier transport process, including carrier escape from QWs and movement across heterojunction interfaces. Additionally, we outline theoretical methods for calculating carrier escape times from both QWs and heterojunction interfaces. Using a GaAs/AlGaAs QW p–i–n structure as a case study, we discuss the effects of carrier escape times from QWs and heterojunction interfaces, as well as carrier transit time through the intrinsic region, on the frequency response of QW p–i–n structures.

Electronic band structure↗

Slope Efficiency and Voltage Reduction at High Current Densities in AlInGaAs Diode Lasers

Here, the slope efficiency and drive voltage of broad area AlInGaAs laser diodes near 865 nm is observed to decrease significantly under quasi-CW pulsed operation at currents well above threshold, in a manner that cannot be explained by thermal effects or carrier leakage over heterojunction barriers. Simulations show that the slope efficiency reduction is explicable by increased free carrier absorption in the waveguide region. Empirical formulas are presented to represent these effects in a closed analytic form suitable for use in simulators for diode-pumped laser systems.

47 OTHER INSTRUMENTATION↗

Fast External Quantum Efficiency Measurements of Photovoltaic Modules

The external quantum efficiency (EQE) or associated spectral response is widely used to evaluate the performance of photovoltaics, light emitting diodes, photodetectors, photodiodes, semiconductor lasers, laser-induced refrigeration of solids etc. For photovoltaic (PV) devices, The EQE is used to determine the spectral mismatch correction that is used to convert a performance measurement from a non-ideal simulator spectrum to a standard spectrum in PV device calibrations. Moreover, EQE can provide important insight into the physics of a PV device. For instance, the EQE shape can be used to infer mechanisms limiting the performance of the device. However, EQE measurements of full-size PV modules remain a challenge in the PV community due to rare availability of reliable module QE measurement tools worldwide and the size and complexity of module architecture that comprises several cells connected in strings (series or/and parallel). Here, we use a customized nondestructive tool made of high-power light emitting diodes to perform high-throughput EQE measurements on PV modules. Circuit simulations show that the measurement system can safely be used to measure both crystalline silicon and thin film-based PV modules with series connected cells without the risk of damage through reverse bias. In addition, EQE mapping combined with electroluminescence show a strong correlation and provide a way to determine both spatial non-uniformity of the spectral response and defects/degradation effects across the module.

PV module↗

Dual-wavelength channel GHz repetition rate mode-locked VECSEL cavities sourced from a common gain medium

Mode-locked vertical external cavity semiconductor lasers are a unique class of nonlinear dynamical systems driven far from equilibrium. We present a novel, to the best of our knowledge, experimental result, supported by rigorous microscopic simulations, of two coexisting mode-locked V-cavity configurations sourced by a common gain medium and operating as independent channels at angle controlled separated wavelengths. Microscopic simulations support pulses coincident on the common gain chip extracting photons from a nearby pair of coexisting kinetic holes burned in the carrier distributions.

47 OTHER INSTRUMENTATION↗

High resolution infrared spectroscopy: Some new approaches and applications to planetary atmospheres

The principles of spectral line formation and of techniques for retrieval of atmospheric temperature and constituent profiles are discussed. Applications to the atmospheres of Earth, Mars, Venus, and Jupiter are illustrated by results obtained with Fourier transform and infrared heterodyne spectrometers at resolving powers (lambda/delta hyperon lambda of approximately 10,000 and approximately 10 to the seventh power), respectively, showing the high complementarity of spectroscopy at these two widely different resolving powers. The principles of heterodyne spectroscopy are presented and its applications to atmospheric probing and to laboratory spectroscopy are discussed. Direct absorption spectroscopy with tuneable semiconductor lasers is discussed in terms of precision frequency-and line strength-measurements, showing substantial advances in laboratory infrared spectroscopy.

Mumma, M. J.↗

Thermal compensator for closed-cycle helium refrigerator

The wave length of an infrared, semiconductor laser diode having an output frequency that is dependent on the diode temperature is maintained substantially constant by maintaining the diode temperature constant. The diode is carried by a cold tip of a closed cycle helium refrigerator. The refrigerator has a tendency to cause the temperature of the cold tip to oscillate. A heater diode and a sensor diode are placed on a thermal heat sink that is the only highly conductive thermal path between the laser diode and the cold tip. The heat sink has a small volume and low thermal capacitance so that the sensing diode is at substantially the same temperature as the heater diode and substantially no thermal lag exists between them. The sensor diode is connected in a negative feedback circuit with the heater diode so that the tendency of the laser diode to thermally oscillate is virtually eliminated.

Jennings, D. E.↗

Semiconductor devices for optical communications in 1 micron band of wavelength

Crystal growth and the characteristics of semiconductor lasers and diodes for the long wavelength band used in optical communications are examined. It is concluded that to utilize the advantages of this band, it is necessary to have a large scale multiple wavelength communication, along with optical cumulative circuits and optical exchangers.

Suematsu, Y.↗

Silicon superlattices: Theory and application to semiconductor devices

Silicon superlattices and their applicability to improved semiconductor devices were studied. The device application potential of the atomic like dimension of III-V semiconductor superlattices fabricated in the form of ultrathin periodically layered heterostructures was examined. Whether this leads to quantum size effects and creates the possibility to alter familiar transport and optical properties over broad physical ranges was studied. Applications to improved semiconductor lasers and electrondevices were achieved. Possible application of silicon sperlattices to faster high speed computing devices was examined. It was found that the silicon lattices show features of smaller fundamental energyband gaps and reduced effective masses. The effects correlate strongly with both the chemical and geometrical nature of the superlattice.

Moriarty, J. A.↗