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Active voltage divider applies different logic signals to field-effect transistor switches to generate various voltage levels at output. Circuit is compact and reduces errors from drifting component values.
Data are presented from a range of operating conditions which include background photo flux, operating temperature, and frequency. Each detector is equipped with a load resistor, a cryogenic field effect transistor preamplifier, and a temperature sensor. Data are also presented of detector signal, noise spectra, noise equivalent power, and spectral response.
A frequency modulated push-pull oscillator in which the non-linear characteristic of varactors producing frequency modulation is compensated for by an opposite non-linear characteristic of a field effect transistor providing modulating bias to the varactors is described.
Feedback network makes resistance of field-effect transistor (FET) same for current flowing in either direction. It combines control voltage with source and load voltages to give symmetric current/voltage characteristics. Since circuit produces same magnitude output voltage for current flowing in either direction, it introduces no offset in presense of altering polarity signals. It is therefore ideal for sensor and effector circuits in servocontrol systems.
Titanium dioxide (TiO2) films prepared by chemical vapor deposition were investigated in this study for the purpose of the application in the GaAs metal-insulator-semiconductor field-effect transistor. The degree of crystallization increases with the deposition temperature. The current-voltage study, utilizing an Al-TiO2-Al MIM structure, reveals that the d-c conduction through the TiO2 film is dominated by the bulk-limited Poole-Frenkel emission mechanism. The dependence of the resistivity of the TiO2 films on the deposition environment is also shown. The results of the capacitance-voltage study indicate that an inversion layer in an n-type substrate can be achieved in the MIS capacitor if the TiO2 films are deposited at a temperature higher than 275 C. A process of low temperature deposition followed by the pattern definition and a higher temperature annealing is suggested for device fabrications. A model, based on the assumption that the surface state densities are continuously distributed in energy within the forbidden band gap, is proposed to interpret the lack of an inversion layer in the Al-TiO2-GaAs MIS structure with the TiO2 films deposited at 200 C.
It was found that ion beam texturing of silicon surfaces can be used to increase the effective surface area of MOS capacitors. There is, however, a problem with low dielectric breakdown. Preliminary work was begun on the fabrication of ion implanted resistors on textured surfaces and the potential improvement of wire bond strength by bonding to a textured surface. In the area of ion beam sputtering, the techniques for sputtering PVC were developed. A PVC target containing valinomycin was used to sputter an ion selective membrane on a field effect transistor to form a potassium ion sensor.
Limiting amplifier, using gallium arsenide field effect transistor (FET), delivers constant-amplitude drive signal to KU-band traveling wave tube (TWT) thus preventing distortion in output from TWT.
Report describes one-year research effort in VLSL fabrication. Four activities are described: theoretical study of two-dimensional diffusion in SOS (silicon-on-sapphire); setup of sputtering system, furnaces, and photolithography equipment; experiments on double layer metal; and investigation of two-dimensional modeling of MOSFET's (metal-oxide-semiconductor field-effect transistors).
An S-band radio frequency interference (RFI) receiver to analyze and identify sources of RFI problems in the Deep Space Network DSN tracking stations is described. The RFI receiver is a constant gain, double conversion, open loop receiver with dual sine/cosine channel outputs, providing a total of 20 MHZ monitoring capability. This receiver is computer controlled using a MODCOMP II miniprocessor. The RFI receiver has been designed to operate at a 150 Kelvin system noise temperature accomplished by cascading two low noise field effect transistor (FET) amplifiers for the receiver front-end. The first stage low noise FET amplifier is mounted at the feed horn to minimize any cable losses to achieve a lower system noise temperature. The receiver is tunable over the frequency range of 2150 to 2450 MHz in both sine/cosine output channels with a resolution of 100 kHz.
The development of 5 kW converters with 100 kHz switching frequencies, consisting of two submodules each capable of 2.5 kW of output power, is discussed. Two semiconductor advances allowed increased power levels. Field effect transistors with ratings of 11 A and 400 V were operated in parallel to provide a converter output power of approximately 2000 W. Secondly, bipolar power switching transistor was operated in conjunction with a turn-off snubber circuit to provide converter output power levels approaching 1000 W. The interrelationships between mass, switching frequency, and efficiency were investigated. Converters were constructed for operation at a maximum output power level of 200 W, and a comparison was made for operation under similar input/output conditions for conversion frequencies of 20 kilohertz and 100 kilohertz. The effects of nondissipative turn-off snubber circuitry were also examined. Finally, a computerized instrumentation system allowing the measurement of pertinent converter operating conditions as well as the recording of converter waveforms is described.
The development of solid state microwave power amplifiers for a solar power satellite transmitting antenna is discussed. State-of-the-art power-added efficiency, gain, and single device power of various microwave solid state devices are compared. The GaAs field effect transistors and the Si-bipolar transistors appear potentially feasible for solar power satellite use. The integration of solid state devices into antenna array elements is examined and issues concerning antenna integration and consequent satellite configurations are examined.
The feasibility of using solid state elements in the solar power satellite transmitter system is addressed. Recommendations are given concerning device types, the antenna modules, and the overall antenna system. The development of a solid state amplifier based on GaAs field effect transistor devices is also described.
Techniques are described to allow operation of discrete solid state detectors at 4 K with optimized junction field effect transistor (JFET) amplifiers. Three detector types cover the 0.6-4 micron spectral range with a noise equivalent power (NEP) of approximately 10 to the -16th per sq rt Hz for two of the types and potential improvement to this performance for the third. Lower NEPs can be anticipated at longer IR wavelengths.
Proposed field-effect transistor consists of three cells which make up one complete FET pellet. Pellet is flip-chip mounted on carrier with source grounded gate and drain posts connected directly to impedance-matching transmission-line segments. Impedance transformers are part of mounting and contact strips.
Tests confirm operation of five commercial semiconductor devices at cryogenic temperatures. The five devices - one tunnel diode, one field-effect transistor, and three CMOS integrated circuits - all perform well in circuits immersed in liquid-helium bath. For some tests, bath temperature was reduced to 1,25K by pumping.
Solid state dc-rf converters offer potential improvements in reliability, mass and low voltage operation, provided that anticipated efficiencies in excess of 80 percent can be realized. Field effect transistors offer the greatest potential in the SPS frequency band at 2.45 GHz. To implement this approach it is essential that means be found to sum the power of many relatively low power solid state sources in a low-loss manner, and that means be provided to properly control the phase of the outputs of the large number of solid state sources required. To avoid the power combining losses associated with circuit hybrids it was proposed that the power from multiple solid state amplifiers be combined by direct coupling of each amplifier's output to the radiating antenna structure. The selected power-combining antenna consists of a unique printed (metalized) microstrip circuit on a ceramic type dielectric substrate which is backed by a shallow lightweight aluminum cavity which sums the power of four microwave sources. The antenna behaves like two one-half wavelength slot-line antennas coupled together via their common cavity structure.
Investigations in critical technology of the solar power satellite (SPS) concept development program are summarized. Studies of the potential application of fiber optics transmission links across the SPS one kilometer antenna and evaluation of gallium arsenide field effect transistors and their associated power amplifier circuitry are discussed in more detail.
Future high capacity satellite communication systems require signal processing on board satellites. The on-board signal processing includes switching of RF signals between multiple antennas to provide interconnection between the uplink and downlink beams. This paper describes the development of a dynamic switch matrix for a TDMA satellite switching system to be used in the next generation communications satellites. In this paper, a dynamic switch matrix, which includes the microwave switch matrix, the distribution control unit and the timing source, will be described. Several different microwave switch matrix architectures and switching devices were evaluated and compared. A unique coupler crossbar switch matrix architecture with dual-gate field effect transistor as switching element was developed. Experimental results of both microwave switch matrix (MSM) and distribution control unit (DCU) are presented. These test results verify the MSM with coupler crossbar architecture and dual-gate FET as switching element will meet the future SS-TDMA system requirements. Finally, the reliability of the dynamic switch matrix is addressed. The analysis shows reliability of 0.9981 for 7 year space operation can be achieved for the designed dynamic switch matrix.