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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 289 records · Page 16
All sourcesNASA NTRSDOE OSTI
NASA NTRS1995

Applications of Silicon Carbide for High Temperature Electronics and Sensors

Silicon carbide (SiC) is a wide bandgap material that shows great promise in high-power and high temperature electronics applications because of its high thermal conductivity and high breakdown electrical field. The excellent physical and electronic properties of SiC allows the fabrication of devices that can operate at higher temperatures and power levels than devices produced from either silicon or GaAs. Although modern electronics depends primarily upon silicon based devices, this material is not capable of handling may special requirements. Devices which operate at high speeds, at high power levels and are to be used in extreme environments at high temperatures and high radiation levels need other materials with wider bandgaps than that of silicon. Many space and terrestrial applications also have a requirement for wide bandgap materials. SiC also has great potential for high power and frequency operation due to a high saturated drift velocity. The wide bandgap allows for unique optoelectronic applications, that include blue light emitting diodes and ultraviolet photodetectors. New areas involving gas sensing and telecommunications offer significant promise. Overall, the properties of SiC make it one of the best prospects for extending the capabilities and operational regimes of the current semiconductor device technology.

Silicon Carbide↗
NASA NTRS2005

Power monitoring in space nuclear reactors using silicon carbide radiation detectors

Space reactor power monitors based on silicon carbide (SiC) semiconductor neutron detectors are proposed. Detection of fast leakage neutrons using SiC detectors in ex-core locations could be used to determine reactor power: Neutron fluxes, gamma-ray dose rates and ambient temperatures have been calculated as a function of distance from the reactor core, and the feasibility of power monitoring with SiC detectors has been evaluated at several ex-core locations. Arrays of SiC diodes can be configured to provide the required count rates to monitor reactor power from startup to full power Due to their resistance to temperature and the effects of neutron and gamma-ray exposure, SiC detectors can be expected to provide power monitoring information for the fill mission of a space reactor.

silicon carbide detectors↗
NASA NTRS2013

Silicon Carbide Telescope Investigations for the LISA Mission

Space-based gravitational wave (GW) detectors are conceived to detect GWs in the low frequency range (mili-Hertz) by measuring the distance between free-falling proof masses in spacecraft (SC) separated by 5 Gm. The reference in the last decade has been the joint ESA-NASA mission LISA. One of the key elements of LISA is the telescope since it simultaneously gathers the light coming from the far SC (approximately or equal to 100 pW) and expands, collimates and sends the outgoing beam (2 W) to the far SC. Demanding requirements have been imposed on the telescope structure: the dimensional stability of the telescope must be approximately or equal to 1pm Hz(exp−1/2) at 3 mHz and the distance between the primary and the secondary mirrors must change by less than 2.5 micrometer over the mission lifetime to prevent defocussing. In addition the telescope structure must be light, strong and stiff. For this reason a potential on-axis telescope structure for LISA consisting of a silicon carbide (SiC) quadpod structure has been designed, constructed and tested. The coefficient of thermal expansion (CTE) in the LISA expected temperature range has been measured with a 1% accuracy which allows us to predict the shrinkage/expansion of the telescope due to temperature changes, and pico-meter dimensional stability has been measured at room temperature and at the expected operating temperature for the LISA telescope (around -6[deg]C). This work is supported by NASA Grants NNX10AJ38G and NX11AO26G,

carbide↗
NASA NTRS2014

High Temperature Dynamic Pressure Measurements Using Silicon Carbide Pressure Sensors

Un-cooled, MEMS-based silicon carbide (SiC) static pressure sensors were used for the first time to measure pressure perturbations at temperatures as high as 600 C during laboratory characterization, and subsequently evaluated in a combustor rig operated under various engine conditions to extract the frequencies that are associated with thermoacoustic instabilities. One SiC sensor was placed directly in the flow stream of the combustor rig while a benchmark commercial water-cooled piezoceramic dynamic pressure transducer was co-located axially but kept some distance away from the hot flow stream. In the combustor rig test, the SiC sensor detected thermoacoustic instabilities across a range of engine operating conditions, amplitude magnitude as low as 0.5 psi at 585 C, in good agreement with the benchmark piezoceramic sensor. The SiC sensor experienced low signal to noise ratio at higher temperature, primarily due to the fact that it was a static sensor with low sensitivity.

Pressure Sensors↗
NASA NTRS2015

High Power Silicon Carbide (SiC) Power Processing Unit Development

NASA GRC successfully designed, built and tested a technology-push power processing unit for electric propulsion applications that utilizes high voltage silicon carbide (SiC) technology. The development specifically addresses the need for high power electronics to enable electric propulsion systems in the 100s of kilowatts. This unit demonstrated how high voltage combined with superior semiconductor components resulted in exceptional converter performance.

Power Processing↗
NASA NTRS2015

Concept Demonstration of Dopant Selective Reactive Etching (DSRIE) in Silicon Carbide

Accurate quantification of combustor pressure dynamics for the primary purpose of experimental validation of computational fluid dynamics (CFD) codes requires the use of robust, reliable and sensitive pressure sensors that can resolve sub--pound-per-square-inch pressure levels in high temperature environments (i.e., combustor). The state of the art microfabricated piezoresistive silicon carbide (SiC) pressure sensors that we have developed are capable of operating reliably at 600 degrees Centigrade. This technology was used in support of the ARMD ISRP-ERA (NASA's Aeronautics Research Mission Directorate, Integrated System Research Project - Environmentally Responsible Aviation) program to quantify combustor thermoacoustic instabilities. The results showed that while the SiC pressure sensors survived the high temperature and measured instabilities, the diaphragm (force collector) was not thin enough to be sensitive in resolving sub-pound-per-square-inch pressures; 30 meters is the thinnest diaphragm achievable with conventional reactive ion etching (RIE) processes. Therefore, this precludes its use for sub-pound-per-square-inch pressure measurement with high fidelity. In order to effectively resolve sub-pound-per-square-inch pressures, a thinner more sensitive diaphragm (10 meters) is needed. To achieve this would require a new and innovative fabrication process technique.

static↗
NASA NTRS2016

Joining and Integration of Silicon Carbide-Based Materials for High Temperature Applications

Advanced joining and integration technologies of silicon carbide-based ceramics and ceramic matrix composites are enabling for their implementation into wide scale aerospace and ground-based applications. The robust joining and integration technologies allow for large and complex shapes to be fabricated and integrated with the larger system. Potential aerospace applications include lean-direct fuel injectors, thermal actuators, turbine vanes, blades, shrouds, combustor liners and other hot section components. Ground based applications include components for energy and environmental systems. Performance requirements and processing challenges are identified for the successful implementation different joining technologies. An overview will be provided of several joining approaches which have been developed for high temperature applications. In addition, various characterization approaches were pursued to provide an understanding of the processing-microstructure-property relationships. Microstructural analysis of the joint interfaces was conducted using optical, scanning electron, and transmission electron microscopy to identify phases and evaluate the bond quality. Mechanical testing results will be presented along with the need for new standardized test methods. The critical need for tailoring interlayer compositions for optimum joint properties will also be highlighted.

Ceramic Matrix Composites↗
NASA NTRS2016

TEM Analysis of Interfaces in Diffusion-Bonded Silicon Carbide Ceramics Joined Using Metallic Interlayers

Silicon Carbide (SiC) is a promising material for thermo-structural applications due to its excellent high-temperature mechanical properties, oxidation resistance, and thermal stability. However, joining and integration technologies are indispensable for this material in order to fabricate large size and complex shape components with desired functionalities. Although diffusion bonding techniques using metallic interlayers have been commonly utilized to bond various SiC ceramics, detailed microstructural observation by Transmission Electron Microscopy (TEM) of the bonded area has not been carried out due to difficulty in preparing TEM samples. In this study, we tried to prepare TEM samples from joints of diffusion bonded SiC ceramics by Focused Ion Beam (FIB) system and carefully investigated the interfacial microstructure by TEM analysis. The samples used in this study were SiC fiber bonded ceramics (SA-Tyrannohex: SA-THX) diffusion bonded with metallic interlayers such as Ti, TiMo, and Mo-B. In this presentation, the result of microstructural analysis obtained by TEM observations and the influence of metallic interlayers and fiber orientation of SA-THX on the joint microstructure will be discussed.

Silicon Carbide↗
NASA NTRS2014

Single-Event Effect Testing of the Cree C4D40120D Commercial 1200V Silicon Carbide Schottky Diode

This study was undertaken to determine the single event effect (SEE) susceptibility of the commercial silicon carbide 1200V Schottky diode manufactured by Cree, Inc. Heavy-ion testing was conducted at the Texas A&M University Cyclotron Single Event Effects Test Facility (TAMU). Its purpose was to evaluate this device as a candidate for use in the Solar-Electric Propulsion flight project.

silicon carbide (SiC)↗
NASA NTRS2016

Body of Knowledge for Silicon Carbide Power Electronics

Wide band gap semiconductors, such as silicon carbide (SiC), have emerged as very promising materials for future electronic components due to the tremendous advantages they offer in terms of power capability, extreme temperature tolerance, and high frequency operation. This report documents some issues pertaining to SiC technology and its application in the area of power electronics, in particular those geared for space missions. It also serves as a body of knowledge (BOK) in reference to the development and status of this technology obtained via literature and industry survey as well as providing a listing of the major manufacturers and their capabilities. Finally, issues relevant to the reliability of SiC-based electronic parts are addressed and limitations affecting the full utilization of this technology are identified.

Silicon Carbide Power Electronics↗