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At least 271 records · Page 15
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Surface Passivation by Excess Sulfur for Controlled Synthesis of Large, Thin SnS Flakes

Tin sulfide (SnS) is part of the group IV chalcogenides (SnX, GeX; X: S, Se), a family of anisotropic layered materials considered for thin film photovoltaics, optoelectronics, and valleytronics, and predicted narrow bandgap multiferroic materials. Large ultrathin SnS flakes, suitable for a variety of applications, are challenging to synthesize because of the enhanced surface reactivity due to the open layer structure of SnS which gives rise to a competition between lateral and vertical growth. Here we investigate the effects of added sulfur on passivating the surface and modifying the balance between lateral expansion and thickening of SnS flakes in chemical vapor transport from a SnS precursor. In addition, we investigate the growth of SnS flakes and compare the results of synthesis from a pure SnS precursor with growth, in which a slight excess of sulfur is supplied in different ways. Our results demonstrate that small amounts of excess sulfur can profoundly affect the size and thickness distributions of SnS flakes. The largest and thinnest flakes are obtained if (i) traces of sulfur are added and (ii) the sulfur source consists either of small Sx fragments released at high temperatures from the reactor walls, or atomic S supplied by sublimation from SnS 2 . The likely mechanism for the observed growth modifications is a transient surface passivation of SnS flakes during growth, which reduces the reactivity of the top facet of the flakes, limits vertical growth, and thus gives rise to ensembles with increased lateral size and reduced thickness.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Variable Surface Termination and Ligand Passivation of Lead Sulfide Nanocrystals Synthesized with Excess Lead Chloride

The surface termination and ligand passivation of semiconducting nanocrystals (NCs) impact the stability, optical properties, and self-assembly of NCs. In this work, we definitively characterize the surface of lead sulfide (PbS) NCs synthesized from excess PbCl 2 . With a combination of small-angle neutron scattering (SANS), photoluminescence, and 1D and 2D NMR experiments, we show that the surface termination of PbS NCs depends on the presence of PbCl 2 during ligand exchange. When excess PbCl 2 is removed prior to ligand exchange, PbS[RNH 3 + Cl – ] NCs are obtained, which are terminated by a monolayer of PbCl x on the {100} PbS facet and passivated by oleylammonium chloride ligands. On the other hand, when excess PbCl 2 remains in solution during ligand exchange, lead oleate forms and attaches to the {111} PbS facets of PbS[RNH 3 + Cl – ] NCs, creating PbS@PbCl x NCs. PbS@PbCl x NCs are coated in an epitaxial layer of PbCl x on both the {100} PbS and {111} PbS facets, making them 0.3–0.4 nm larger on average than PbS[RNH 3 + Cl – ] NCs with identical absorption wavelengths. Additionally, PbS@PbCl x NCs have a consistently higher photoluminescence quantum yield and longer photoluminescence lifetimes than PbS[RNH 3 + Cl – ] NCs. This study clarifies the surface structure of PbS NCs synthesized from excess PbCl 2 , highlighting ligand exchange strategies and reconciling observations from across the literature.

Anions↗
DOE OSTI2022

Dual Passivation of Cathode and Anode through Electrode–Electrolyte Interface Engineering Enables Long-Lifespan Li Metal–SPAN Batteries

The reliability and durability of lithium metal (Li 0 )–sulfur batteries are largely limited by the undesired Li 0 plating-stripping irreversibility and the detrimental polysulfide dissolution, yet approaches that can simultaneously address the above anodic and cathodic problems are scarce. In this study, we report the stable operation of a Li 0 -SPAN (sulfurized polyacrylonitrile) battery via an anode–cathode dual-passivation approach. By combination of a fluorinated localized high concentration electrolyte (LHCE) and a Li 3 N-forming additive (TMS-N 3 ), robust and highly conductive electrode passivation layers are formed in situ on the surface of both the Li 0 anode and the SPAN cathode. The resulting highly reversible, dendrite-free, and high-density Li 0 plating morphology enables a high Coulombic efficiency of 99.4%. Advanced tender energy X-ray spectroscopy also reveals the eliminated Li 2 S formation and minimized polysulfide dissolution in SPAN cathodes, leading to a high capacity of 580 mAh/g SPAN and stable cycling with negligible capacity decay (0.7%) for 800 cycles. This electrode–electrolyte interphase engineering strategy has tackled the major limitations of Li–S batteries in both ether- and carbonate-based electrolyte systems and under a wide temperature range from –10 to +50 °C, thus providing insightful guidelines for the rational design of highly durable and high-energy-density Li 0 -S batteries.

25 ENERGY STORAGE↗
DOE OSTI2026

Quantification of Shallow Defect Suppression in Aminosilane-Passivated Lead Halide Perovskites via Optical and Electrochemical Methods

We combine fluence-dependent photoluminescence (PL) and electrochemical characterization to estimate defect-dependent trapping rates, energetic distributions, and densities of defects, in lead halide perovskite films Cs 0.1 FA 0.9 PbI 3 and Cs 0.17 FA 0.83 Pb­(I 0.75 Br 0.25 ) 3 , before and after trap passivation with vapor-deposited (3-aminopropyl)­trimethoxysilane (APTMS). For both compositions, the PL studies show that energetically shallow subgap near-valence defect densities lead to bimolecular nonradiative recombination which is reduced by 92% after APTMS treatment. Electrochemical characterization of these same active layers shows for the first time that APTMS passivation impacts mainly on near-valence (mobile anionic) defects that decrease in density by 4 orders of magnitude, from 10 18 cm –3 to 10 14 cm –3 , as a result of silane modification. Here, the combination of PL and electrochemical characterization promises a unique approach to speciation and quantification of a broader distribution of trap states in perovskites and provides straightforward assessments of the efficacy of defect mitigation strategies.

Defects↗
DOE OSTI2023

The Effect of the SEI Layer Mechanical Deformation on the Passivity of a Si Anode in Organic Carbonate Electrolytes

The solid electrolyte interphase (SEI) on a Si negative electrode in carbonate-based organic electrolytes shows intrinsically poor passivating behavior, giving rise to unsatisfactory calendar life of Li-ion batteries. Moreover, mechanical strains induced in the SEI due to large volume changes of Si during charge-discharge cycling could contribute to its mechanical instability and poor passivating behavior. This study elucidates the influence that static mechanical deformation of the SEI has on the rate of unwanted parasitic reactions at the Si/electrolyte interface as a function of electrode potential. Further, the experimental approach involves the utilization of Si thin-film electrodes on substrates with disparate elastic moduli, which either permit or suppress the SEI deformation in response to Si volume changes upon charging-discharging. We find that static mechanical stretching and deformation of the SEI results in an increased parasitic electrolyte reduction current on Si. Furthermore, attenuated total reflection and near-field Fourier-transform infrared nanospectroscopy reveal that the static mechanical stretching and deformation of the SEI fosters a selective transport of linear carbonate solvent through, and nanoconfinement within, the SEI. These, in turn, promote selective solvent reduction and continuous electrolyte decomposition on Si electrodes, reducing the calendar life of Si anode-based Li-ion batteries. Finally, possible correlations between the structure and chemical composition of the SEI layer and its mechanical and chemical resilience under prolonged mechanical deformation are discussed in detail.

25 ENERGY STORAGE↗
DOE OSTI2021

The passivity of lithium electrodes in liquid electrolytes for secondary batteries

Rechargeable Li metal batteries are currently limited by electrolyte decomposition and rapid Li consumption. Li plating and stripping greatly depend on the solid electrolyte interphase formed at the Li metal-liquid electrolyte interface. This Review discusses the reactions occurring at this interface from a corrosion science perspective, highlighting the requirements for an ideal passivation layer. Rechargeable Li metal batteries are currently limited by safety concerns, continuous electrolyte decomposition and rapid consumption of Li. These issues are mainly related to reactions occurring at the Li metal-liquid electrolyte interface. Additionally, the formation of a passivation film (that is, a solid electrolyte interphase) determines ionic diffusion and the structural and morphological evolution of the Li metal electrode upon cycling. In this Review, we discuss spontaneous and operation-induced reactions at the Li metal-electrolyte interface from a corrosion science perspective. We highlight that the instantaneous formation of a thin protective film of corrosion products at the Li surface, which acts as a barrier to further chemical reactions with the electrolyte, precedes film reformation, which occurs during subsequent electrochemical stripping and plating of Li during battery operation. Finally, we discuss solutions to overcoming remaining challenges of Li metal batteries related to Li surface science, electrolyte chemistry, cell engineering and the intrinsic instability of the Li metal-electrolyte interface.

25 ENERGY STORAGE↗
DOE OSTI2021

Passivation-driven speciation, dealloying and purification

Thin passivating surface oxide layers on metal alloys form a dissipation horizon between dissimilar phases, hence harbour an inherent free energy and composition gradient. We exploit this gradient to drive order and selective surface separation (speciation), enabling redox-driven enrichment of the core by selective conversion of low standard reduction potential (E°) components into oxides. Additionally, coupling this oxide growth to volumetric changes during solidification allows us to create oxide crystallites trapped in a metal (‘ship-in-a-bottle’) or extrusion of metal fingerlings on the heavily oxidized particle. We confirm the underlying mechanism through high temperature X-ray diffraction and characterization of solidification-trapped particle states. We demonstrate that engineering the passivating surface oxide can lead to purification via selective dealloying with concomitant enrichment of the core, leading to disparate particle morphologies.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Ultrathin alumina passivation for improved photoelectrochemical water oxidation catalysis of tin oxide sensitized by a phosphonate-functionalized perylene diimide first without, and then with, CoOy

Previously, a photoanode composed of nanostructured SnO 2 coated with the perylene diimide dye N,N'-bis(phosphonomethyl)-3,4,9,10-perylenediimide (PMPDI) plus photoelectrochemically deposited cobalt oxide (CoO y ) was shown to photoelectrochemically oxidize water at 31 ± 7% faradaic efficiency. A non-ideal part of that prior system is that the addition of the known CoO y water oxidation catalyst (WOC) resulted in a reduction of the total photocurrent rather than the anticipated increase, due to an increase in charge-carrier recombination. Herein, we show deposition of an ultrathin alumina overlayer applied by atomic layer deposition (ALD) on the SnO 2 /PMPDI photoanode can improve the photoactivity and catalytic activity of the system; the addition a ca. 1 nm-thick AlO x layer deposited on a 4000 nm (i.e., 4 micron) thick mesoporous anode system can and does have a positive, 2.5-fold improvement in the steady-state photocurrent with 29 ± 9% faradaic efficiency vs. the control anode without alumina passivation by reducing charge-carrier recombination. Moreover, ALD-deposited AlO x layer does help support the understanding of the “anti-catalysis” of co-depositing a CoO y WOC on the SnO 2 /PMPDI DS-PECs—specifically the picture of direct CoO y –SnO 2 contact-mediated recombination—but that AlO x layer was unable to improve the photocurrent in a net SnO 2 /PMPDI/AlO x (/CoO y ) system. We attribute the lack of a performance enhancement by CoOy WOC to incomplete coverage of each SnO 2 nanoparticle by the AlO x . Overall, we find the addition of an optimized ultrathin AlOx layer (0.6 nm thick; deposited at 85 °C) improves the SnO 2 /PMPDI/AlO x system's photoactivity by a factor of up to ca. 3-fold with reduced recombination. These results document that metal-oxide passivation by low-temperature ALD can be an effective strategy for improving the water oxidation performance of even nanostructured dye sensitized-photoelectrochemical cell.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Electrochemical quantification of phosphonic acid passivated surface sites of NiO x for perovskite solar cells

Nickel oxide (NiO x ) is among the few p-type metal oxide semiconductors considered a strong candidate for hole transport layers in halide perovskite solar cells (PSCs). However, its reactivity with perovskite ions poses significant challenges to achieving high efficiency and long-term stability. Here, we investigate passivation of detrimental reactive surface sites on NiO x by carbazole phosphonic acids. We leverage electrochemical cyclic voltammetry (CV) of NiO x electrodes as a proxy measure for the redox activity that afflicts PSCs. From the CVs, we derive a metric, N (units cm −2 ), that relates to the number of redox active sites on NiO x surfaces. We observe a statistically significant negative correlation between PSC efficiency and N-value that indicates PSCs are more efficient on NiO x with lower electrochemical reactivity. The new mechanistic insight into NiO x passivation demonstrates it requires a reducing agent and Brønsted acid combination, providing a broadly applicable approach for evaluating and enhancing the stability and performance of NiO x -based interfaces in photovoltaics.

14 SOLAR ENERGY↗
DOE OSTI2026

Photovoltage behaviour of p-Sb 2 S 3 photocathodes for hydrogen evolution: effect of n-In 2 S 3 passivation layers

The 1.76 eV band gap of antimony(iii) sulphide (Sb 2 S 3 ) makes this semiconductor material a promising light absorber for photoelectrochemical water splitting, but scalable fabrication approaches to efficient devices are still lacking. Here we show that compact Sb 2 S 3 films on FTO can be obtained by electrochemical growth from aqueous colloidal sulphur and antimony trichloride solutions, followed by mild annealing. These films can be converted into hydrogen evolution photocathodes after coating with In 2 S 3 passivation layers and the addition of Pt proton reduction co-catalysts. For the first time, vibrating Kelvin probe surface photovoltage (VKP-SPV) spectroscopy is used to observe the carrier dynamics in such photoelectrodes. While the bare Sb 2 S 3 films suffer from high surface recombination rates and poor electron extraction, the In 2 S 3 overlayer is found to raise the photovoltage and cathodic photocurrent density, due to passivation of surface defects and formation of a p–n heterojunction. In thick In 2 S 3 films, these benefits are offset by shading and slow electron transfer. Also, we find that O 2 strongly affects the band bending in the Sb 2 S 3 –air and In 2 S 3 –air junctions and their photovoltage. The optimised devices evolve H 2 at 77.5% Faradaic efficiency and with 0.084% applied bias photon-to-current efficiency (ABPE) at 0.12 V vs. RHE. The low ABPE value is attributed to Sb 2 S 3 sub-bandgap defects visible in SPV spectra, the random orientation of Sb 2 S 3 crystallites in the films, which inhibits charge transport, the absence of crystal facets of Sb 2 S 3 , and a detrimental Schottky junction at the FTO|Sb 2 S 3 interface.

de Araújo, Moisés A. [University of California, Da↗
DOE OSTI2021

Evaluation of the Passive Cooling Potential of Thermal Mass Inherent in Medium to Large Commercial Buildings

Typical commercial construction inherently contains large surface areas of relatively thin mass located in the floor slabs. This research asks how effective this mass could be for passive cooling, relative to other mass depths, if it were to be exposed and used as thermal mass. Although much of the rich literature on thermal mass has been conducted with far greater mass depths, a more limited amount of research suggests that because the surface heat transfer rate is limited, the focus should be on the surface area of exposed mass, not its depth. This presents an opportunity for more buildings to behave more thermally massively, if the mass inherent in typical floor slabs contains utility, particularly over diurnal cycles. In all climates analyzed, it was found that there is a pronounced shoulder where energy savings from passive cooling of increasing mass depths was steep until roughly 7.5–10 cm, and beyond this point the achieved energy savings diminished rapidly. When considering the embodied energy of concrete, the incremental benefit of added mass beyond a typical topping slab of 10 cm does not justify the incremental embodied energy cost from a total energy standpoint alone.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2020

Control of passivation and compensation in Mg-doped GaN by defect quasi Fermi level control

A defect quasi Fermi level (dQFL) control process based on above bandgap illumination was applied to control H and V N -complexes, which are the main contributors to the passivation and self-compensation, respectively, in Mg:GaN grown via metalorganic chemical vapor deposition. Secondary ion mass spectrometry measurements confirmed that the total Mg incorporation was unaffected by the process. However, the total H concentration was reduced to similar levels obtained by post-growth thermal activation prior to any annealing treatment. Similarly, the 2.8 eV emission in the photoluminescence spectra, attributed to compensating V N and its complexes, was reduced for the dQFL-process samples. After thermal activation and Ni/Au contact deposition, Hall effect measurements revealed lower resistivities (increased mobilities and free hole concentrations) for dQFL-grown samples with Mg doping concentrations above and below 2 × 10 19 cm -3 . All these results demonstrate that the dQFL process can effectively reduce the H-passivation and self-compensation of the Mg:GaN films.

36 MATERIALS SCIENCE↗
DOE OSTI2021

How oxygen passivates polycrystalline nickel surfaces

The passivation of polycrystalline nickel surfaces against hydrogen uptake by oxygen is investigated experimentally with low energy ion scattering (LEIS), direct recoil spectroscopy (DRS), and thermal desorption spectroscopy (TDS). These techniques are highly sensitive to surface hydrogen, allowing the change in hydrogen adsorption in response to varying amounts of oxygen exposure to be measured. The chemical composition of a nickel surface during a mixed oxygen and hydrogen exposure was characterized with LEIS and DRS, while the uptake and activation energies of hydrogen on a nickel surface with preadsorbed oxygen were quantified with TDS. By and large, these measurements of how the oxygen and hydrogen surface coverage varied in response to oxygen exposure were found to be consistent with predictions of a simple site-blocking model. This finding suggests that, despite the complexities that arise due to polycrystallinity, the oxygen-induced passivation of a polycrystalline nickel surface against hydrogen uptake can be approximated by a simple site-blocking model.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Geometry and dynamics of passive scalar structures in compressible turbulent mixing

We present a structure-based numerical analysis of passive scalar mixing in decaying homogeneous isotropic turbulence (DHIT) and shock-turbulence interaction canonical configurations. The analysis focuses on the temporal evolution of ensembles of passive scalar structures, initialized as spheres of different sizes relative to the Taylor microscale. An algorithm is introduced to track the evolution of each individual structure and the interactions with other structures in the ensemble, relating changes in the surface geometry and the underlying physical processes (turbulent transport, scalar dissipation, and shock compression). The tracking algorithm is applied to datasets from shock-capturing direct numerical simulations of DHIT, with Taylor microscale Reynolds number Re λ =40 and turbulence Mach number M t =0.2 ⁠, and STI cases in which the turbulence is processed by a shock wave at Mach numbers M = 1.5 and 3.0. Temporal surface convolution increases for initially larger structures, resulting in a higher probability of locally hyperbolic geometries where breakup into smaller structures occurs. Shock-induced deformation of the structures amplifies breakup processes, enhancing mixing, particularly for larger structures. Mixing enhancement by the shock is manifested as an amplification of the surface-averaged scalar gradient, which increases for initially larger structures. The alignment between the scalar gradient and the most extensional strain-rate eigendirection on the scalar isosurfaces also increases across the shock. Larger magnitudes of the scalar gradient and its alignment with the most compressive strain-rate eigendirection correlate with flatter surface regions. Shock-induced structure compression increases the area coverage of flat regions, where the amplification of scalar gradient is localized.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Restored Passivation after Complete Removal of Front Poly-Si Between the Grid in Poly-Si/SiO2 Front/Back Cells

This work explores the use of wet chemical etching to completely remove the front poly-Si layer between grid lines of a front/back poly-Si/SiO2 passivated contact device. The purpose of the work is to provide excellent passivation under the metal grid, but to also maximize Jsc by eliminating optical absorption in the front poly-Si. We show that after a high temperature anneal to distribute carriers in the poly-Si/SiO2/c-Si interface all of the poly-Si can be removed selectively with TMAH, using the SiO2 as an etch-stop layer. The etched surface can be repassivated back to its original level with the addition of a SiNx/Al2O3 stack grown on the preserved tunnelling oxide layer followed by a short forming gas anneal. Using symmetric 100 - 200 nm intrinsically doped poly-Si/SiO2 on textured n-type wafer templates we show absolute device efficiency enhancement from 15% to 21% by increasing the Jsc by 12 mA/cm2 after removing the front poly-Si and repassivating while effectively preserving the Voc, and FF of the device. IQE values are similar to PERC devices in the short wavelength range.

etching↗
DOE OSTI2023

Trap passivation of 4H-SiC/SiO 2 interfaces by nitrogen annealing

We report an N 2 based annealing treatment to passivate interface traps (D it ) in n- and p-type 4H-SiC. The process has the potential to replace the commonly used hazardous and expensive gas nitric oxide (NO). N 2 postoxidation annealing reduces D it in both the upper and lower halves of the 4H-SiC bandgap, with a greater impact at the valence band edge. N 2 annealing at 1500 °C is observed to be more effective in passivating traps and positive fixed charges than NO annealing for p-type devices, whereas for n-type devices, the opposite is true. The breakdown voltages for these devices are found to be lower than that of NO annealed devices. X-ray photoelectron spectroscopy has been performed to estimate the nitrogen areal density at the interface. D it is measured as a function of nitrogen areal densities in the near interfacial regions for the different processes. Additionally, theoretical analysis through density functional theory is consistent with the measured D it profiles by showing the generation of additional states near the valence band edge due to increased nitrogen concentration. In addition to reporting the effect of N 2 annealing on both n- and p-type 4H-SiC, this work correlates the nitrogen areal densities at the interface to the D it and explains the difference in D it characteristics with nitrogen areal density between n- and p-type interfaces.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Staircases of passive and active scalar concentration in cellular flow

This paper develops a unified model for staircase formation in both passive and active scalar systems, building upon prior numerical studies by offering new heuristic and physical insights. While prior studies primarily reported numerical results, they did not explore the underlying unifying physics that governs both types of scalar transport; this work addresses that gap by identifying shared mechanisms across both cases. Results of studies of passive and active scalar staircase formation in cellular flows are presented. Staircase formation in cellular flows occurs due to the interplay of fast mixing within cells and slow transport across the inter-cell boundary. The cell boundary emerges as a de facto transport barrier. Special attention is focused on the effects of cellular fluctuations and noise upon staircase structure. A forced, fluctuating vortex array model is used to drive the underlying flow structure. Cellular Peclet number and staircase profile curvature are identified as figures-of-merit to quantify the resiliency of layering. These are related to simple, multi-scatterer scalar random walk models. Results for Peclet number and curvature scaling with flow excitation are presented. We also study staircases of magnetic potential evolving in two-dimensional magnetohydrodynamics as examples of layering of active scalar concentration. Formation of magnetic potential staircases is indeed observed. Flux expulsion inhibits the intercellular transport of magnetic potential and strengthens staircase barriers. Magnetic staircases can be supported against resistive decay by magnetic potential noise forcing. Implications for staircase formation in magnetic confinement experiments are discussed.

Control theory↗
DOE OSTI2021

Impurity transport studies at the HSX stellarator using active and passive CVI spectroscopy

The transport of carbon impurities has been studied in the helically symmetric stellarator experiment (HSX) using active and passive charge exchange recombination spectroscopy (CHERS). For the analysis of the CHERS signals, the STRAHL impurity transport code has been re-written in the python programming language and optimized for the application in stellarators. In addition, neutral hydrogen densities both along the NBI line of sight as well as for the background plasma have been calculated using the FIDASIM code. By using the basinhopping algorithm to minimize the difference between experimental and predicted active and passive signals, significant levels of impurity diffusion are observed. In this work, comparisons with neoclassical calculations from DKES/PENTA show that the inferred levels exceed the neoclassical transport by about a factor of four in the core and more than 100 times towards the plasma edge, thus indicating a high level of anomalous transport. This observation is in agreement with experimental heat diffusivites determined from a power balance analysis which exhibits strong anomalous transport as well.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗