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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 271 records · Page 15
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Medium Voltage Energy Hub Based on Multilevel Cascaded H Bridge-Dual Active Bridge Back-to-Back Converter for Power Distribution Feeders Interconnection and Multiple Simultaneous Grid Services

This paper presents a medium voltage energy hub based on a modular design of a multilevel cascaded H bridge (CHB)-dual active bridge (DAB) converter. The energy hub composed of the two CHB-DAB modules with a back-to-back topology can be utilized as a grid interconnection component between distribution feeders. The energy hub can provide multiple simultaneous grid services such as voltage regulation, power factor correction, as well as active power flow control between the connected feeders, contributing to grid flexibility, efficiency, reliability, and resilience. Circuit structure and control schemes for the energy hub including both local controllers for each converter and outer loop controllers are proposed to enable simultaneous grid services with coordination to prevent the overloading of the hub. To validate the performance of the hub, the hub system is interconnected between two IEEE 4-bus feeders and provides voltage regulation for both feeders, while controlling active power flow between them. The system and the feeders are implemented in Real-Time Digital Simulator (RTDS) for real-time simulation verification.

Choi, Jongchan↗
DOE OSTI2022

Pore-Scale Simulation of Spectral Induced Polarization

A new model was developed to simulate spectral induced polarization (SIP) in porous media. The model is based on a pore-network approximation of the soil or rock, in which bonds between pores are represented by equivalent circuits. In the circuit model, electrolytic and surface conduction occur in parallel, with the electrolyte behaving as a single resistor, and the mineral surface behaving as a resistor and capacitor in series. Based on the pore geometry, fluid conductivity, and mineral surface conductivity, an impedance network is generated. SIP spectra are calculated by solving the sinusoidal steady-state electrical problem for a range of frequencies. The new model provides a tool to bridge the gap between (1) our fundamental understanding of polarization processes at the scale of a single pore or grains and (2) existing simulation capabilities for macroscale systems that do not account for pore-scale properties. The model is implemented in Matlab and can solve two-dimensional and three-dimensional (2D and 3D) networks. Examples for regular cubic lattices are presented, but the method and code are flexible with respect to pore geometries and allow for future leveraging of existing open-source capabilities for generation of pore networks and extraction of network geometries from micro imaging of core samples.

58 GEOSCIENCES↗
NASA NTRS1987

Study of the generator/motor operation of induction machines in a high frequency link space power system

Static power conversion systems have traditionally utilized dc current or voltage source links for converting power from one ac or dc form to another since it readily achieves the temporary energy storage required to decouple the input from the output. Such links, however, result in bulky dc capacitors and/or inductors and lead to relatively high losses in the converters due to stresses on the semiconductor switches. The feasibility of utilizing a high frequency sinusoidal voltage link to accomplish the energy storage and decoupling function is examined. In particular, a type of resonant six pulse bridge interface converter is proposed which utilizes zero voltage switching principles to minimize switching losses and uses an easy to implement technique for pulse density modulation to control the amplitude, frequency, and the waveshape of the synthesized low frequency voltage or current. Adaptation of the proposed topology for power conversion to single-phase ac and dc voltage or current outputs is shown to be straight forward. The feasibility of the proposed power circuit and control technique for both active and passive loads are verified by means of simulation and experiment.

Lipo, Thomas A.↗
DOE OSTI2021

The deep-DRT: A deep neural network approach to deconvolve the distribution of relaxation times from multidimensional electrochemical impedance spectroscopy data

Electrochemical impedance spectroscopy (EIS) is an experimental technique ubiquitously used to study electrochemical systems. However, conventional EIS data interpretation through physical and equivalent circuit models is challenging because physical models are problem-specific, and equivalent circuits are often just lumped-element analogs lacking physical meaning. The distribution of relaxation times (DRT) has emerged as a complementary approach to resolve these issues. One drawback of conventional DRT deconvolution is that the EIS data is understood to be (only) a function of frequency (i.e. 1D data) and deconvolved accordingly. This work proposes a novel deconvolution method based on deep neural networks (DNNs), allowing the analysis of multidimensional EIS spectra to bridge data dependency on both frequencies and experimental conditions. Two particularly appealing traits of the deep-DRT method developed in this article are that neither regularization nor specific spacing on the state variables defining the experiment are required. Finally, leveraging DNN to examine complex EIS spectra and their dependence on experimental conditions, this work opens a new research direction in the area of EIS analysis and DRT deconvolution.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS2011

Operation of a New Half-Bridge Gate Driver for Enhancement - Mode GaN FETs, Type LM5113, Over a Wide Temperature Range

A new commercial-off-the-shelf (COTS) gate driver designed to drive both the high-side and the low-side enhancement-mode GaN FETs, National Semiconductor's type LM5113, was evaluated for operation at temperatures beyond its recommended specified limits of -40 C to +125 C. The effects of limited thermal cycling under the extended test temperature, which ranged from -194 C to +150 C, on the operation of this chip as well as restart capability at the extreme cryogenic and hot temperatures were also investigated. The driver circuit was able to maintain good operation throughout the entire test regime between -194 C and +150 C without undergoing any major changes in its outputs signals and characteristics. The limited thermal cycling performed on the device also had no effect on its performance, and the driver chip was able to successfully restart at each of the extreme temperatures of -194 C and +150 C. The plastic packaging of this device was also not affected by either the short extreme temperature exposure or the limited thermal cycling. These preliminary results indicate that this new commercial-off-the-shelf (COTS) halfbridge eGaN FET driver integrated circuit has the potential for use in space exploration missions under extreme temperature environments. Further testing is planned under long-term cycling to assess the reliability of these parts and to determine their suitability for extended use in the harsh environments of space.

Patterson, Richard↗
NASA NTRS2008

A Novel Nanoionics-Based Switch for Microwave Applications

This paper reports the development and characterization of a novel switching device for use in microwave systems. The device utilizes a switching mechanism based on nanoionics, in which mobile ions within a solid electrolyte undergo an electrochemical process to form and remove a conductive metallic "bridge" to define the change of state. The nanoionics-based switch has demonstrated an insertion loss of approx.0.5dB, isolation of >30dB, low voltage operation (1V), low power (approx. micro-W) and low energy (approx. nJ) consumption, and excellent linearity up to 6 GHz. The switch requires fewer bias operations (due to non-volatile nature) and has a simple planar geometry allowing for novel device structures and easy integration into microwave power distribution circuits.

Nessel, James A.↗
DOE OSTI2025

Optimizing Insulation Design for Transformers in Medium Voltage Power Conversion Systems

Medium-frequency transformers (MFTs) play a crucial role in medium-voltage (MV) solidstate transformer (SST) systems, particularly in extreme fast charging applications. Achieving partial discharge (PD)-free operation while maintaining high power density is a significant challenge due to the high electric field (E-field) stresses inherent in MV applications. This dissertation focuses on the insulation design and optimization of MFTs used in both the main power electronics circuits and auxiliary power supplies. The study begins with an overview of insulation testing methodologies, including high potential tests, basic insulation level tests, and PD tests, which are critical for evaluating MFT insulation reliability. Given the importance of PD-free operation for long-term reliability, particular emphasis is placed on understanding PD mechanisms, including void, corona, and surface discharge, and their mitigation strategies. A high voltage isolated auxiliary power supply is then introduced, utilizing a gapped transformer encapsulated in silicone gel. This design achieves PD-free insulation up to 18 kV RMS while maintaining low coupling capacitance to minimize common-mode current. The proposed solution ensures reliable operation in MV environments and offers a scalable approach for auxiliary power in cascaded SST architectures. To improve MFT insulation in main power conversion circuits, a novel structure is developed using polypropylene sheets and potting compounds to create a void-free air gap, effectively mitigating E-field intensity. A prototype transformer with this insulation structure is built and achieves PD-free operation up to 30 kV RMS. This design is experimentally validated in a resonant converter operating at 46 kW, demonstrating its feasibility for MV SST applications. Further optimization is implemented to enhance MFT performance for dual-active-bridge(DAB) converters by integrating a semiconductive shielding layer within the insulation structure. This shielding layer improves the magnetic coupling coefficient while effectively confining the E-field within high insulation materials, thereby reducing eddy current losses. The optimized MFT achieves PD-free operation at 12.6 kV RMS and is successfully tested in a DAB converter operating at 43 kW, which meets the insulation requirements for a 13.2 kV SST system. This dissertation advances MFT insulation design by introducing and experimentally validating novel approaches that improve high voltage insulation while optimizing magnetic coupling and manufacturability. The proposed insulation structures enable PD-free operation while minimizing insulation material usage and simplifying assembly, making them ideal for high power, high voltage applications.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
NASA NTRS1983

Inherent overload protection for the series resonant converter

The overload characteristics of the full bridge series resonant power converter are considered. This includes analyses of the two most common control methods presently in use. The first of these uses a current zero crossing detector to synchronize the control signals and is referred to as the alpha controller. The second is driven by a voltage controlled oscillator and is referred to as the gamma controller. It is shown that the gamma controller has certain reliability advantages in that it can be designed with inherent short circuit protection. Experimental results are included for an 86 kHz converter using power metal-oxide-semiconductor field-effect transistors (MOSFETs).

King, R. J.↗
NASA NTRS2008

Disabling CNT Electronic Devices by Use of Electron Beams

Bombardment with tightly focused electron beams has been suggested as a means of electrically disabling selected individual carbon-nanotubes (CNTs) in electronic devices. Evidence in support of the suggestion was obtained in an experiment in which a CNT field-effect transistor was disabled (see figure) by focusing a 1-keV electron beam on a CNT that served as the active channel of a field-effect transistor (FET). Such bombardment could be useful in the manufacture of nonvolatile-memory circuits containing CNT FETs. Ultimately, in order to obtain the best electronic performances in CNT FETs and other electronic devices, it will be necessary to fabricate the devices such that each one contains only a single CNT as an active element. At present, this is difficult because there is no way to grow a single CNT at a specific location and with a specific orientation. Instead, the common practice is to build CNTs into electronic devices by relying on spatial distribution to bridge contacts. This practice results in some devices containing no CNTs and some devices containing more than one CNT. Thus, CNT FETs have statistically distributed electronic characteristics (including switching voltages, gains, and mixtures of metallic and semiconducting CNTs). According to the suggestion, by using a 1-keV electron beam (e.g., a beam from a scanning electron microscope), a particular nanotube could be rendered electrically dysfunctional. This procedure could be repeated as many times as necessary on different CNTs in a device until all of the excess CNTs in the device had been disabled, leaving only one CNT as an active element (e.g., as FET channel). The physical mechanism through which a CNT becomes electrically disabled is not yet understood. On one hand, data in the literature show that electron kinetic energy >86 keV is needed to cause displacement damage in a CNT. On the other hand, inasmuch as a 1-keV beam focused on a small spot (typically a few tens of nanometers wide) deposits a significant amount of energy in a small volume, the energy density may suffice to thermally induce structural and/or electronic changes that disable the CNT. Research may be warranted to investigate this effect in detail.

Petkov, Mihail↗
DOE OSTI2022

A Half-Bridge On-State Voltage Sensor for In-Situ Measurements

Current prognostics for life expectancy of power semiconductors utilize off-line measurements of the on-state resistance. Presented is a half-bridge (HB) on-state voltage (VON) sensor capable of being utilized for in-situ measurements enabling continuous and real-time monitoring of the on-state resistance. The design provides a single VON measurement output that contains independent VON information of both high and low side devices in a HB leg. The measurement output is referenced from the middle point of the HB and combines the two complementary VON sensing outputs. This system reduces the number of components, required number of analog signal processing circuits, and ADC channels for in-situ health monitoring of a power electronics system. These reductions will facilitate integration of the VON sensor with the gate driver board and achieve low system profile. The experimental results demonstrate the proposed VON measurements while switching with inductive and resistive loads.

Roy, Chondon↗
NASA NTRS1992

The 10 kW power electronics for hydrogen arcjets

A combination of emerging mission considerations such as 'launch on schedule', resource limitations, and the development of higher power spacecraft busses has resulted in renewed interest in high power hydrogen arcjet systems with specific impulses greater than 1000 s for Earth-space orbit transfer and maneuver applications. Solar electric propulsion systems with about 10 kW of power appear to offer payload benefits at acceptable trip times. This work outlines the design and development of 10 kW hydrogen arcjet power electronics and results of arcjet integration testing. The power electronics incorporated a full bridge switching topology similar to that employed in state of the art 5 kW power electronics, and the output filter included an output current averaging inductor with an integral pulse generation winding for arcjet ignition. Phase shifted, pulse width modulation with current mode control was used to regulate the current delivered to arcjet, and a low inductance power stage minimized switching transients. Hybrid power Metal Oxide Semiconductor Field Effect Transistors were used to minimize conduction losses. Switching losses were minimized using a fast response, optically isolated, totem-pole gate drive circuit. The input bus voltage for the unit was 150 V, with a maximum output voltage of 225 V. The switching frequency of 20 kHz was a compromise between mass savings and higher efficiency. Power conversion efficiencies in excess of 0.94 were demonstrated, along with steady state load current regulation of 1 percent. The power electronics were successfully integrated with a 10 kW laboratory hydrogen arcjet, and reliable, nondestructive starts and transitions to steady state operation were demonstrated. The estimated specific mass for a flight packaged unit was 2 kg/kW.

Hamley, John A.↗
DOE OSTI2025

Innovative Method for Reliable Measurement of PEM Water Electrolyzer Component Resistances

Understanding the sheet resistance of porous electrodes is essential for improving the performance of polymer electrolyte membrane (PEM) water electrolyzers and related technologies. Despite its importance, existing methods often fail to provide reliable and comprehensive data, especially for porous materials with complex morphologies and non‐uniform thicknesses. This study introduces a robust and straightforward method for determining the sheet resistance of porous electrodes using a novel probe concept based on industrial printed circuit board (PCB) technology. This probe measures resistance across ten distances, ranging from 250 µm to 2500 µm, enabling local mapping of resistance. The study focuses on the sheet resistance of key components in PEM water electrolyzers, including the gas diffusion layer (GDL), porous transport layer (PTL), and catalyst layers deposited on a membrane. Additionally, an image‐processing‐based method is presented to obtain the thickness distribution of the studied catalyst layers, facilitating a detailed analysis of the electrical in‐plane resistivity with thickness variations. Overall, this methodology has the potential to expedite material integration and bridge the gap between electrode engineering and single‐cell testing, thereby advancing the development of PEM water electrolyzers.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Inverted metamorphic GaInAs solar cell grown by dynamic hydride vapor phase epitaxy

We present an inverted metamorphic rear heterojunction ~1.0 eV GaInAs solar cell deposited by dynamic hydride vapor phase epitaxy (D-HVPE) with high growth rate. This device uses a Ga 1-x In x P compositionally graded buffer (CGB) to bridge the lattice constant gap between the GaAs substrate and the Ga0.71In0.29As emitter layer. High-resolution x-ray diffraction and transmission electron microscopy confirm that the Ga 0.71 In 0.29 As emitter is grown lattice-matched to the in-plane lattice constant of the CGB with minimal generation of defects at the GaInAs/GaInP interface. The device contains a threading dislocation density of 2.3 × 10 6 cm -2 , a level that enables high-performance minority carrier devices and is comparable to previously demonstrated GaInP CGBs grown by D-HVPE. The device exhibits an open-circuit voltage of 0.589 V under a one-sun AM1.5G illumination condition and a bandgap-voltage offset of 0.407 V, indicating metamorphic epitaxial performance nearly equal to state-of-the-art devices. We analyze the dark current of the device and determine that reducing recombination in the depletion region, which can be achieved by reducing the threading dislocation density and optimizing the device doping density, will improve the device performance. Furthermore, the CGB and device layers, comprising ~8 µm of thickness, are grown in under 10 min, highlighting the ability of D-HVPE to produce high-quality metamorphic devices of all types with the potential for dramatically higher throughput compared to present technology.

14 SOLAR ENERGY↗
DOE OSTI2026

An Atom-Precise Approach to Damp First-Order Phase Transitions and Its Implications for Neuromorphic Signal Processing

Neuromorphic computing inspired by mammalian intelligence aims to emulate the nonlinear dynamics of biological neurons and synapses to achieve fast, low-energy, and highly efficient information processing. Brain-inspired computing relies on the design and discovery of materials exhibiting nonlinear current–voltage profiles, frequently underpinned by electronic state transitions, to achieve spiking neurons and dynamically tunable synapses. A signature challenge in the design of artificial neurons is controlling the steepness of first-order transitions in active elements, as abrupt transitions are at risk of driving unstable voltage and temperature oscillations, which result in catastrophic device failure. A critical knowledge gap is the lack of structure–function correlations mapping the composition and atomistic structure of crystalline solids to nonlinear dynamical response characteristics. Here, we address the key question of how modification of atomistic structure correlates with alteration of neuron-like functionality. Constructing oscillator circuits from millimeter-scale single crystals enables high-resolution atomic structure solutions, which we use to demonstrate that the selective positioning of Pb cations modifies charge ordering along a one-dimensional CuxV2O5 framework even at low insertion stoichiometries, thereby providing an atom-precise design parameter for damping first-order transitions. We use temperature-variant X-ray diffraction and X-ray spectroscopy to elucidate the suppression of Cu-ion shuttling based on the precise positioning of Pb ions in seven-coordinated tunnel interstitial sites as the mechanistic basis for transition broadening, thus bridging a critical gap between statistical mechanics and quantum chemical descriptions of phase transitions. Such mechanistic understanding thus paves the way to site-selective modification strategies for modulating the sharpness of first-order transitions, with an exemplary demonstration here in tuning neuronal signal processing.

Crystal structure↗
DOE OSTI2020

Integrated linker-regulation and ring-fusion engineering for efficient additive-free non-fullerene organic solar cells

The rational molecular design and structural modification of quasi-two-dimensional fused perylene diimide (quasi-2D FPDI) acceptors have received growing attention for application in non-fullerene organic solar cells (NF-OSCs). Herein, we designed and synthesized two pairs of FPDI acceptors, one in the form of FPDI–π-bridge–FPDI with the π-bridge being either an axisymmetric thiophene (T) or a centrosymmetric thienothiophene (TT) unit, and the other being the corresponding ring-fusion counterpart. Additionally, four small molecule acceptors, namely T-FPDI, TT-FPDI, FT-FPDI and FTT-FPDI, were paired with a common PTB7-Th polymeric electron donor as active materials for a comparative study of the effects of linkers and ring fusion on their photovoltaic performances. The T-FPDI-based NF-OSC exhibited a decent power conversion efficiency (PCE) of 5.50%, while a higher PCE of 7.17% with a simultaneous enhancement in the open circuit voltage ( V oc ), the short-circuit current density ( J sc ) and the fill factor (FF) was achieved for the TT-FPDI-based solar cells. The solar cells based on the ring-fused FT-FPDI and FTT-FPDI acceptors displayed PCEs of 6.75% and 7.66%, respectively, both higher than those of the corresponding non-fused counterparts. Notably, the trade-off between the J sc and V oc , commonly observed in fullerene OSCs, is alleviated in these systems. It is also worth noting that the NF-OSCs based on these FPDI acceptors do not need any solvent additives. Overall, this successful molecular engineering based on novel quasi-2D FPDI building blocks may inspire the development of emergent electron acceptors for high performance additive-free NF-OSCs.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Spark Channel Dynamics of Electrostatic Discharges

When two differently-charged objects are brought in close proximity to each other, the resulting high electric fields can cause electron avalanche breakdown of the air gap separating the objects, a process known as electrostatic discharge (ESD). If enough initial charge is stored on the objects, the electrical breakdown can proceed to ionize the air to such a degree that a highly conductive filament of plasma forms in the gap, known as a spark channel. The spark electrically bridges the air gap, resulting in a rapid pulse of current that neutralizes the charge difference. The current pulse produces significant heating of the gas in the spark, resulting in dissociation, ionization, thermal radiation, and hydrodynamic expansion. ESD presents a hazard to electrically-sensitive devices, with consequences such as economic losses (e.g. damaged electronics) or unsafe response (e.g. unintended ignition of flammable gas mixtures, initiation of detonators, etc.). For this thesis, the ESD spark is taken to occur between two conducting electrodes, with the spark channel being axisymmetric in a cylindrical coordinate system centered on the channel. An RLC-type circuit is used for the discharge model of the ESD event. The spark is treated as a time-dependent resistance that is in series with a capacitance, an inductance, and (optionally) a load resistance representing a “victim” component under threat from the ESD event. The primary motivation of this work is to use a numerical hydrodynamic model to understand the energy dissipation and transport processes in the spark. The model consists of the compressible Euler equations of mass, momentum, and energy conservation together with an Eddington/P1 approximation for thermal radiation transport. To close the hydrodynamic system, an equation of state (EOS) was fitted from tabular data for air that accounts for the dissociation and ionization of air species. The hydrodynamic equations are solved using a conservative Lagrangian finite volume method. These partial differential equations are coupled to the circuit equations by calculation of the spark resistance via numerical integration of the electrical conductivity of the channel. Computational results are compared against experimental measurements of discharge current and radial density of the spark channel.

42 ENGINEERING↗
DOE OSTI2023

Impact Report: Quantum Systems Accelerator

The Quantum Systems Accelerator (QSA) is a U.S. National Quantum Information Science Research Center established in August 2020 and funded by the Department of Energy (DOE) Office of Science. QSA is composed of 15 partner institutions— universities and national laboratories—bringing together pioneers of many of today’s unique quantum information science (QIS) and engineering capabilities. Led by Lawrence Berkeley National Laboratory (Berkeley Lab), with Sandia National Laboratories (Sandia Labs) as the lead partner, 250+ QSA researchers are catalyzing U.S. leadership in a fast-growing field that seeks solutions to the Nation’s and the world’s most pressing problems by harnessing the laws of quantum mechanics.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2025

Bridging paradigms: Designing for HPC-Quantum convergence

Here, this paper presents a comprehensive software stack architecture for integrating quantum computing (QC) capabilities with High-Performance Computing (HPC) environments. While quantum computers show promise as specialized accelerators for scientific computing, their effective integration with classical HPC systems presents significant technical challenges. We propose a hardware-agnostic software framework that supports both current noisy intermediate-scale quantum devices and future fault-tolerant quantum computers, while maintaining compatibility with existing HPC workflows. The architecture includes a quantum gateway interface, standardized APIs for resource management, and robust scheduling mechanisms to handle both simultaneous and interleaved quantum–classical workloads. Key innovations include: (1) a unified resource management system that efficiently coordinates quantum and classical resources, (2) a flexible quantum programming interface that abstracts hardware-specific details, (3) A Quantum Platform Manager API that simplifies the integration of various quantum hardware systems, and (4) a comprehensive tool chain for quantum circuit optimization and execution. We demonstrate our architecture through implementation of quantum–classical algorithms, including the variational quantum linear solver, showcasing the framework’s ability to handle complex hybrid workflows while maximizing resource utilization. This work provides a foundational blueprint for integrating QC capabilities into existing HPC infrastructures, addressing critical challenges in resource management, job scheduling, and efficient data movement between classical and quantum resources.

97 MATHEMATICS AND COMPUTING↗