High-temperature-materials study
Chemical vapor deposition of aluminum phosphides onto single crystals of silicon and gallium arsenide for producing high temperature operating solid state electronic devices
Baxter, R. D.↗
SEARCH · Engineering Papers
Results for “Gallium arsenide”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
Optically induced free-carrier light modulator
Gallium arsenide laser modulator, attenuation coefficients, and semiconductors for optical communication systems
Gruber, C.↗
Radiation effects on lasers Final report, 1 Jul. 1965 - Oct. 1967
Space radiation effects on gallium arsenide laser diodes and optically pumped lasers
Compton, D. M. J.↗
Development of a microelectronic module Interim scientific report, 1 Apr. 1967 - 31 Mar. 1968
Gallium arsenide n-p-n transistors using different crystal materials and fabrication technologies
Doerbeck, F.↗
Thin-film active device investigations Final status report, 1 Dec. 1967 - 31 Aug. 1968
Developing evaporated gallium arsenide to determine electrical and structural transport properties for coplanar electrode, space charge limited triodes
Nicol, W. S.↗
Development of a microelectronic module Final report
Feasibility of operating gallium arsenide devices in high temperature microelectronic circuits
Doerbeck, F.↗
Study of semiconductor heterojunctions of ZnSe, GaAs and Ge Quarterly report, 1 Aug. - 31 Oct. 1969
Semiconductor heterojunctions of zinc selenides, gallium arsenides, and germanium
Feucht, D. L.↗
Perfection of materials technology for producing improved Gunn-effect devices Interim scientific report
Chemical vapor deposition of epitaxial gallium arsenide
Baxter, R. D.↗
Development of ion implantation techniques for microelectronics
Ion implantation techniques for p-n junction diodes of silicon carbide and gallium arsenide
Dunlap, H. L.↗
Theoretical and experimental investigations of collective microwave phenomena in solids Semiannual status, 1 Apr. - 30 Sep. 1969
Microwave amplification in high resistivity gallium arsenides
Kino, G. S.↗
Laser Tracking and Ranging System
The Laser Tracking and Ranging System (LTRS) is an optical tracking radar that uses a gallium-arsenide injection laser as the transmitting source. The system is designed to track a small retrodirective corner-reflector array and to provide continuously the range, azimuth, and elevation of the array's position relative to the tracking unit. The development effort was directed toward providing a small, compact and relatively lightweight instrument mainly as a part of the Lunar Surveying System for tracking an astronaut's staff. A number of other applications considered include the LTRS as a navigation instrument for a Lunar Flying Vehicle and as a crew safety device for monitoring an astronaut's situation during any EVA operations.
Source record↗
Development of ion implantation techniques for microelectronics
Ion implantation forming of conducting layers and p-n junctions in gallium arsenide and silicon carbide
Dunlap, H.↗
GaAs solar detector using manganese as a doping agent Patent
Describing method for vapor deposition of gallium arsenide films to manganese substrates to provide semiconductor devices with low resistance substrates
Pasierb, E. F.↗
The effect of acoustic fields on the efficiency of solar cells
Acoustic field effects on gallium arsenide, silicon solar cells, and photoresistive devices with and without light exposure
Latch, L. R.↗
Simple method of making photovoltaic junctions Patent
Gallium arsenide solar cell preparation by surface deposition of cuprous iodide on thin n-type polycrystalline layers and heating in iodine vapor
Ellis, S. G.↗
Optimization of a solution growth experiment for zero gravity and development of apparatus for a melt growth experiment Final report
Optimization for zero gravity experiment on solution growth of gallium arsenide and design of experiment package for melt growth of indium antimonide crystals
Duncan, C. S.↗
Techniques for reducing mixer conversion loss in millimeter wave receivers for communications and radiometry
Effects of parasitic impedances on conversion loss of millimeter wave mixers utilizing ion bombarded silicon and gallium arsenide
Shackelford, R. G.↗
Temperature dependence of ionization rates in Al/x/Ga/1-x/As
Temperature dependence of ionization rates in aluminum gallium arsenides for samples with varying Al contents
Shabde, S. N.↗