NASA NTRS · 19690014715
Development of a microelectronic module Final report
Abstract
Feasibility of operating gallium arsenide devices in high temperature microelectronic circuits
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Doerbeck, F., Harp, E., Mehal, E., Strack, H.. 1968-11-01. Development of a microelectronic module Final report. https://ntrs.nasa.gov/citations/19690014715
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