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At least 253 records · Page 14
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Optimized Viewing Techniques to Minimize Radiation Damage From X-ray Imaging Systems

X-ray inspection of ball grid arrays (BGAs) is typically performed at one or more viewing angles to examine adhesion sites for errors such as voids, joint cracking, or head-in-pillow. During this inspection process, the cir cuit board assembly is subject to ionizing radiation exposure, which can cause trapped charge within oxide layers of semiconductor devices. Some x-ray machines allow for programmable inspection routines, which could be used to optimize radiation exposure to semiconductor components. Using Monte Carlo methods, x-ray inspection of a BGA was simulated to determine a range of acceptable viewing angles. Dose rates to circuit board components were estimated at each inspection angle to determine the view resulting in optimized radiation exposure. Results showed that for each BGA, the maximum unobstructed viewing times without exceeding a 5 Gy dose limit to a single part ranged from 82 to 94 minutes. Using a radiation cost function method, optimized viewing across all components was found. Here, it was observed that for a consistent dose limit applied to silicon-based components, performing inspection with BGAs facing the x-ray source was optimal. A third method was applied, assigning individual dose limits based on empirical data from the NASA Goddard Space Flight Center radiation database. This method showed that optimized viewing maximizes the distance between the radiation source and highly sensitive components. It was also observed that cumulative effects from viewing two BGAs will influence viewing angles, causing the optimal view of one BGA to exist nearly 180° from the other.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
NASA NTRS1977

Prediction and measurement results of radiation damage to CMOS devices on board spacecraft

All the currently available results of the flight experiment for all the individually instrumented 130 transistors, relating to both biased and unbiased n- and p-channel RCA and -channel AMI devices were presented. The predictions of dose levels based on a detailed analysis of the space radiation environment as encountered by Explorer-55 and calculated by one dimensional slab geometry, and three dimensional spherical geometry were cited.

Stassinopoulos, E. G.↗
NASA NTRS1987

Radiation damage and defect behavior in proton irradiated lithium-counterdoped n+p silicon solar cells

Two lithium-counterdoped n+p silicon solar cells with different lithium concentrations were irradiated by 10-MeV protons. Cell performance was measured as a function of fluence, and it was found that the cell with the highest concentration of lithium had the highest radiation resistance. Deep level transient spectroscopy which showed two deep level defects that were lithium related. Relating the defect energy levels obtained from this study with those from earlier work using 1-MeV electron irradiation shows no correlation of the defect energy levels. There is one marked similarity: the absence of the boron-interstitial-oxygen-interstitial defect. This consistency strengthens the belief that lithium interacts with oxygen to prevent the formation of the boron interstitial-oxygen interstitial defect. The results indicate that, in general, addition of lithium in small amounts to the p-base of a boron doped silicon solar cell such that the base remains p-type, tends to increase the radiation resistance of the cell.

Stupica, John↗
NASA NTRS1984

The effects of lithium counterdoping on radiation damage and annealing in n(+)p silicon solar cells

Boron-doped silicon n(+)p solar cells were counterdoped with lithium by ion implantation and the resultant n(+)p cells irradiated by 1 MeV electrons. Performance parameters were determined as a function of fluence and a deep level transient spectroscopy (DLTS) study was conducted. The lithium counterdoped cells exhibited significantly increased radiation resistance when compared to boron doped control cells. Isochronal annealing studies of cell performance indicate that significant annealing occurs at 100 C. Isochronal annealing of the deep level defects showed a correlation between a single defect at E sub v + 0.43 eV and the annealing behavior of short circuit current in the counterdoped cells. The annealing behavior was controlled by dissociation and recombination of this defect. The DLTS studies showed that counterdoping with lithium eliminated three deep level defects and resulted in three new defects. The increased radiation resistance of the counterdoped cells is due to the interaction of lithium with oxygen, single vacancies and divacancies. The lithium-oxygen interaction is the most effective in contributing to the increased radiation resistance.

Weinberg, I.↗
DOE OSTI2026

Radiation damage in tungsten under high-energy He-ion irradiation

Tungsten (W) is a primary candidate for plasma-facing components (PFCs) in fusion reactors and hybrid fission-fusion reactors. However, W suffers from severe microstructural damage under Helium (He) ion irradiation in operation conditions. Key irradiation parameters, including incident ion energy, fluence, and irradiation temperature, are known to determine the formation of He bubbles and dislocation loops, which ultimately lead to the degradation of mechanical properties, such as radiation hardening and ductile-to-brittle transition temperature (DBTT) shifts. Various strategies, for instance, interface engineering and alloying, have been developed to enhance He irradiation tolerance in W to address these challenges. Studies in the recent two decades have enhanced the understanding of the underlying mechanisms that drive defect evolution and mechanical performance degradation, thereby offering more insights into the design of more resilient W-based materials for extreme environments.

Liu, Yinghang [Purdue University]↗
DOE OSTI2024

CHARACTERIZATION OF RADIATION DAMAGES TO POSITRON SOURCE MATERIALS

The secondary beam production target at future positron sources at the Continuous Electron Beam Accelerator Facility (CEBAF), the International Linear Collider (ILC) or the Future Circular Collider (FCC), features unprecedented mechanical and thermal stresses which may compromise sustainable and reliable operation. Candidate materials are required to possess high melting temperature together with excellent thermal conductivity, elasticity and radiation hardness properties. In order to substantiate the material choice for the CEBAF and ILC positron sources, the response of candidate materials such as titanium alloys, tungsten, and tantalum to electron beam irradiation was experimentally investigated. CEBAF and ILC expected operating conditions were mimicked using the 3.5 MeV electron beam of the MAMI facility injector. The material degradations were precisely analyzed via high energy X-ray diffraction at the HEMS beamline operated by the Helmholtz-Zentrum Hereon at the PETRA III synchrotron facility. This work reports the results of these measurements and their interpretation.

Lengler, T.↗
NASA NTRS2002

Cancer Risk-Assessment of Radiation Damage in Ataxia Telangiectasia Heterozygous Human Breast Epithelial Cell Cultures

This paper describes the study of the markers of cellular changes that are found during the onset of carcinogenesis. Several of the biological factors are markers of stress response, oncoprotein expression, and differentiation factors. Oxidative stress response agents such as heat shock proteins (HSPs) protect cells from oxidative stresses such as ionizing radiation. The onocoprotein HER-2/neu, a specific breast cancer marker, indicates early onset of cancer. Additional structural and morphogenetic markers of differentiation were considered in order to determine initial cellular changes at the initial onset of cancer. As an additional consideration, all-trans retinoic acid (RA), a differentiation agent, was considered because of its known role in regulating normal differentiation and inhibiting tumor proliferation via specific nuclear receptors. This paper discusses study and results of the preliminary analyses of gamma irradiation of AT heterozygous human breast epithelial cells (WH). Comparisons are also made of the effects various RA concentrations post-irradiation.

Lisa C. Applewhite↗
NASA NTRS1980

Radiation damage in lithium-counterdoped n/p silicon solar cells

Lithium counterdoped n+/p silicon solar cells were irradiated with 1 MV electrons and their post irradiation performance and low temperature annealing properties were compared to that of the 0.35 ohm cm control cells. Cells fabricated from float zone and Czochralski grown silicon were investigated. It was found that the float zone cells exhibited superior radiation resistance compared to the control cells, while no improvement was noted for the Czochralski grown cells. Room temperature and 60 C annealing studies were conducted. The annealing was found to be a combination of first and second order kinetics for short times. It was suggested that the principal annealing mechanism was migration of lithium to a radiation induced defect with subsequent neutralization of the defect by combination with lithium. The effects of base lithium gradient were investigated. It was found that cells with negative base lithium gradients exhibited poor radiation resistance and performance compared to those with positive or no lithium gradients; the latter being preferred for overall performance and radiation resistance.

Hermann, A. M.↗
NASA NTRS1984

Radiation damage and defect behavior in ion-implanted, lithium counterdoped silicon solar cells

Boron doped silicon n+p solar cells were counterdoped with lithium by ion implanation and the resultant n+p cells irradiated by 1 MeV electrons. The function of fluence and a Deep Level Transient Spectroscopy (DLTS) was studied to correlate defect behavior with cell performance. It was found that the lithium counterdoped cells exhibited significantly increased radiation resistance when compared to boron doped control cells. It is concluded that the annealing behavior is controlled by dissociation and recombination of defects. The DLTS studies show that counterdoping with lithium eliminates at least three deep level defects and results in three new defects. It is speculated that the increased radiation resistance of the counterdoped cells is due primarily to the interaction of lithium with oxygen, single vacancies and divacancies and that the lithium-oxygen interaction is the most effective in contributing to the increased radiation resistance.

Weinberg, I.↗
NASA NTRS1984

Radiation damage and defect behavior in ion-implanted, lithium counterdoped silicon solar cells

Boron doped silicon n+p solar cells were counterdoped with lithium by ion implantation and the resuitant n+p cells irradiated by 1 MeV electrons. The function of fluence and a Deep Level Transient Spectroscopy (DLTS) was studied to correlate defect behavior with cell performance. It was found that the lithium counterdoped cells exhibited significantly increased radiation resistance when compared to boron doped control cells. It is concluded that the annealing behavior is controlled by dissociation and recombination of defects. The DLTS studies show that counterdoping with lithium eliminates at least three deep level defects and results in three new defects. It is speculated that the increased radiation resistance of the counterdoped cells is due primarily to the interaction of lithium with oxygen, single vacanies and divacancies and that the lithium-oxygen interaction is the most effective in contributing to the increased radiation resistance.

Weinberg, I.↗
DOE OSTI2024

MORPHOLOGICAL AND RADIATION DAMAGE INFORMED THERMAL PROPERTY PREDICTION IN SCALED GEOMETRIC DOMAINS

This proposed work has the potential to rewrite the way the nuclear industry investigates new fuel and nuclear material designs. The current rubric of nuclear material design has myriad steps in the process, and while certain physics are modeled accurately, each step must be connected in order to obtain an entire description of the process. At present, neutronic, thermal, microstructural, fission product chemistry and migration, and radiation defect analysis (hereafter referred to together as “combined analysis”) are performed, albeit separately. There is no existing method which combines these physics in an attempt to understand the natural interactions between these phenomena. Consequently, the timeline for design, fabrication, experiment, validation, and licensing can take years. A disruptive approach is required to accelerate the development of new technology. This proposed undertaking creates a validated computational framework, generating a new microscopic-to-macroscopic methodology yielding thermal property predictions for nuclear fuels and materials at an engineering spatial scale.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
NASA NTRS1980

Radiation damage in silicon NIP solar cells

The performance parameters of n(+) p p(+) silicon solar cells of varying thicknesses with boron doped p base resistivities of 1250 and 84 ohm centimeters were determined. High injection theory was used to analyze the experimental data. Results from an analysis of open circuit voltages show a much greater contribution to V(oc) from the back junction than is the case for the lower resistivity in common use. The base minority carrier distribution is seen to be significant in determining the contribution of V(B), the base contribution to V(oc). Although V(B) is small, its value increases with increasing radiation fluence. In this connection it is noted that, with illumination from the p(+) side, the sign of V(B) becomes positive, and V(B) itself becomes an additive term to V(oc). Diffusion lengths determined under high injection conditions are significantly greater than those obtained under low injection, while damage coefficients under low injection are higher than those obtained under high injection conditions.

Weinberg, I.↗
DOE OSTI2021

Characterization of radiation damage in 3D printed SiC

The SiC fuel matrix for advanced gas-cooled high temperature reactors as part of the Transformational Challenge Reactor program serves as the fuel particle container structure, a barrier to fission gas release, and a heat transfer medium. Its performance is particularly important because the fuel matrix must demonstrate good structural stability and thermal behaviors. An additive manufacturing methodology combining a binder jet 3D printing process with chemical vapor infiltration (CVI) for the production of SiC was recently developed. In this study, post irradiation examination by transmission electron microscopy shows that defect accumulation within the printed particles is very similar to other forms of high-purity SiC. However, damage accumulation was not directly observed in the CVI matrix because black spot damage and dislocation loops are difficult to image within the nanoscale highly faulted CVI matrix and because interstitial defects may rapidly annihilate at the stacking faults. Therefore, electron energy loss spectroscopy (EELS) analysis was used to analyze defect swelling in both the printed particles and the CVI matrix. The EELS analysis helped reveal that the radiation-induced swelling in the CVI matrix is similar to that of the printed SiC particles. This work shows that 3D printed SiC has behavior that is comparable to SiC processed by other means and that 3D printing could serve as a suitable processing technique for high-purity SiC for nuclear applications.

36 MATERIALS SCIENCE↗
NASA NTRS1977

Effects of defect recombination centers on radiation damage in solar cells

Defect production in silicon is modeled on a computer by solving a large system of rate equations. The model includes the main, known defects that are stable at operating temperatures of solar cells in outer space; most of these defects are secondary and tertiary defects. The preliminary result shows that the presence of defect recombination centers for primary defects (i.e., vacancy and interstitial) can effectively reduce the production rates of those stable defects and, consequentially, improve the lifetime of solar cells operating in radiation environment. The characteristics of the defect recombination center required for better solar cell performance along with prospective candidates are discussed.

Cheng, L. J.↗
NASA NTRS1980

Annealing of radiation damage in low resistivity silicon solar cells

The reduction of the temperatures required to restore cell performance after irradiation was investigated with emphasis on the annealing characteristics of two groups of cells containing different amounts of oxygen and carbon. Examination of defect behavior in irradiated boron doped silicon leads to the tentative conclusion that further reduction in annealing temperature could be achieved by decreasing the carbon concentration and either neutralizing the divacancy and/or minimizing its formation as a result of irradiation. A significant reduction in the temperature required to remove radiation induced degradation in 0.1 ohm centimeter silicon solar cells was achieved.

Weinberg, I.↗
NASA NTRS1973

Proton-radiation damage in Gunn oscillators

The irradiation effects of 22 MeV protons on the electrical characteristics of GaAs continuous-wave Gunn oscillators was studied. The radio frequency power output was reduced by 3 decibels at proton fluences in the neighborhood of 1.5 x 10 to the 12th power protons/sq cm. Conductance measurements indicate that the carrier removal rate at high electric fields remained roughly 40 percent less than at low fields. Diode efficiencies of two device groups were found to be monotonically descreasing functions of fluence. Frequency modulation noise was generally unaffected by radiation, but the magnitude of the noise in the noise power spectrum increased significantly. These effects are partially accounted for, in a qualitative fashion, by a model of electron traps having field-dependent net-carrier capture rates and various response times.

Johnson, J. W.↗
NASA NTRS1991

Gallium Arsenide solar cell radiation damage experiment

Gallium arsenide (GaAs) solar cells for space applications from three different manufactures were irradiated with 10 MeV protons or 1 MeV electrons. The electrical performance of the cells was measured at several fluence levels and compared. Silicon cells were included for reference and comparison. All the GaAs cell types performed similarly throughout the testing and showed a 36 to 56 percent power areal density advantage over the silicon cells. Thinner (8-mil versus 12-mil) GaAs cells provide a significant weight reduction. The use of germanium (Ge) substrates to improve mechanical integrity can be implemented with little impact on end of life performance in a radiation environment.

Maurer, R. H.↗