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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 253 records · Page 14
All sourcesNASA NTRSDOE OSTI
NASA NTRS2001

Design Considerations for Heavily-Doped Cryogenic Schottky Diode Varactor Multipliers

Diode modeling for Schottky varactor frequency multipliers above 500 GHz is presented with special emphasis placed on simple models and fitted equations for rapid circuit design. Temperature- and doping-dependent mobility, resistivity, and avalanche current multiplication and breakdown are presented. Next is a discussion of static junction current, including the effects of tunneling as well as thermionic emission. These results have been compared to detailed measurements made down to 80 K on diodes fabricated at JPL, followed by a discussion of the effect on multiplier efficiency. Finally, a simple model of current saturation in the undepleted active layer suitable for inclusion in harmonic balance simulators is derived.

Schlecht, E.↗
NASA NTRS1994

Solid state laser systems for space application

Since the last report several things have happened to effect the research effort. In laser metrology, measurements using Michelson type interferometers with an FM modulated diode laser source have been performed. The discrete Fourier transform technique has been implemented. Problems associated with this technique as well as the overall FM scheme were identified. The accuracy of the technique is not at the level we would expect at this point. We are now investigating the effect of various types of noise on the accuracy as well as making changes to the system. One problem can be addressed by modifying the original optical layout. Our research effort was also expanded to include the assembly and testing of a diode pumped\Nd:YAG laser pumped\Ti sapphire laser for possible use in sounding rocket applications. At this stage, the diode pumped Nd:YAG laser has been assembled and made operational.

Kay, Richard B.↗
NASA NTRS1987

Surface plasmon dispersion analysis in the metal-oxide-metal tunnel diode

A detailed model of surface plasmon dispersion in the metal-oxide-metal tunnel diode is presented in order to clarify the spectral emission from this diode. The model predicts the location of the spectral peaks and the emission between the peaks by considering the effects of retardation on the surface plasmon. A nonradiative mode is found to play a major role in the transition from the visible to UV peaks in the diode spectra.

Donohue, J. F.↗
NASA NTRS1988

Spectroscopy and diode laser-pumped operation of Tm, Ho:YAG

Spectroscopic measurements and analysis of diode laser-pumped operation of Tm, Ho:YAG at 2.1 microns at room temperature have been performed. The peak effective stimulated emission cross section is measured to be 9 x 10-21 sq cm at 2.091 microns and the upper state lifetime is 8.5 ms. Under diode laser pumping, thresholds of 4.4 mW of absorbed power and slope efficiency of 19 percent have been demonstrated. Calculations of threshold power are performed based on the spectroscopic measurements. An energy transfer upconversion process is identified which leads to a sublinear rise in upper-state population with pump power.

Fan, Tso Yee↗
NASA NTRS2000

SiC-Based Gas Sensor Development

Silicon carbide based Schottky diode gas sensors are being developed for applications such as emission measurements and leak detection. The effects of the geometry of the tin oxide film in a Pd/SnO2/SiC structure will be discussed as well as improvements in packaging SiC-based sensors. It is concluded that there is considerable versatility in the formation of SiC-based Schottky diode gas sensing structures which will potentially allow the fabrication of a SiC-based gas sensor array for a variety of gases and temperatures.

Hunter, G. W.↗
NASA NTRS1983

Laser induced asymmetry and inhomogeneous broadening of the microwave lineshape of a gas cell atomic frequency standard

The possibility of replacing the RF discharge lamp in a rubidium gas cell clock with a single mode laser diode is addressed. Since the short term stability of the rubidium frequency standard is limited by the shot noise of the photodetector, an increased signal-to-noise ratio due to more efficient laser diode optical pumping might improve the short term performance. Because the emission wavelength of the laser diode can be tuned, improved long term performance could be gained through the control of the light shift effect. However, due to the nature of the gas cell frequency standard, various physical phenomena are strongly coupled in their effect on the frequency output, and thus careful consideration must be given to any change in one parameter because of its interrelation with other parameters. Some investigations concerning the coupled effect of the optical and microwave fields in the rubidium atomic clock are reported. It is shown that this type of coupling is an important consideration for any attempt to incorporate a laser diode into a gas cell clock.

Camparo, J. C.↗
NASA NTRS1983

Communications and logic systems at millimeter wave frequencies

Activities in materials development, lithography, FET experiments, and mixer diode fabrication are reported. In addition, articles are presented which address leakage effects in n-GaAs MESFET's and lateral nonuniform doping in GaAs MESFET's.

Source record↗
NASA NTRS1985

Deconvolution of diode-laser spectra

A new technique has been developed for deconvolving diode-laser spectra. This technique treats Doppler broadening, collisional broadening, and instrumental effects simultaneously. This technique is superior to previous deconvolution methods in the recovery of line-strength and transition-frequency information. A section of the ethane spectrum near 12 microns is used as an example. This new approach applies to any spectroscopy in which the instrumental resolution is narrower than actual linewidths.

Halsey, G. W.↗
NASA NTRS1996

Charge Collection in Simple EPI Diodes

Charge collection from ion tracks in epi diodes is investigated by computer simulations. As previously noted by others, collected charge can exceed charge liberated in the epi layer. Several cases are compared to illustrate the effect of changing ion LET, epi doping density, and doping types. It is found that the n(sup +)-p-p(sup +) diode displays a funneling regime and a diffusion regime (as previously noted by others),, but the p(sup +)-n-n(sup +) diode does not. Simple models are proposed for quantitative estimates of collected charge. A qualitative two-state picture of funneling is discussed.

epi diodes↗
NASA NTRS2016

Long-Term Reliability of a Hard-Switched Boost Power Processing Unit Utilizing SiC Power MOSFETs

Silicon carbide (SiC) power devices have demonstrated many performance advantages over their silicon (Si) counterparts. As the inherent material limitations of Si devices are being swiftly realized, wide-band-gap (WBG) materials such as SiC have become increasingly attractive for high power applications. In particular, SiC power metal oxide semiconductor field effect transistors' (MOSFETs) high breakdown field tolerance, superior thermal conductivity and low-resistivity drift regions make these devices an excellent candidate for power dense, low loss, high frequency switching applications in extreme environment conditions. In this paper, a novel power processing unit (PPU) architecture is proposed utilizing commercially available 4H-SiC power MOSFETs from CREE Inc. A multiphase straight boost converter topology is implemented to supply up to 10 kilowatts full-scale. High Temperature Gate Bias (HTGB) and High Temperature Reverse Bias (HTRB) characterization is performed to evaluate the long-term reliability of both the gate oxide and the body diode of the SiC components. Finally, susceptibility of the CREE SiC MOSFETs to damaging effects from heavy-ion radiation representative of the on-orbit galactic cosmic ray environment are explored. The results provide the baseline performance metrics of operation as well as demonstrate the feasibility of a hard-switched PPU in harsh environments.

Ikpe, Stanley A.↗
NASA NTRS1980

Projected noise in submillimeter-wave mixers with InSb Schottky diodes

The reduction of the equivalent noise temperature in liquid-nitrogen-cooled submillimeter-wave mixers by the use of Schottky barriers on InSb instead of GaAs is evaluated by an analytical model that assumes limited local oscillator power and matched impedances. The calculations, executed at 1.0 and 1.8 THz, take plasma resonance and skin effect into account. For single and multiple contacts on homogeneous semiconductor materials of optimum doping, the noise of InSb diodes is smaller than that of GaAs diodes by a factor of 3 to 14. A simplified model is used to predict the performance of epitaxial structures as well as alternative materials.

Lieneweg, U.↗
NASA NTRS1985

Radiation effects induced in pin photodiodes by 40- and 85-MeV protons

PIN photodiodes were bombarded with 40- and 85-MeV protons to a fluence of 1.5 x 10 to the 11th power p/sq cm, and the resulting change in spectral response in the near infrared was determined. The photocurrent, dark current and pulse amplitude were measured as a function of proton fluence. Changes in these three measured properties are discussed in terms of changes in the diode's spectral response, minority carrier diffusion length and depletion width. A simple model of induced radiation effects is presented which is in good agreement with the experimental results. The model assumes that incident protons produce charged defects within the depletion region simulating donor type impurities.

Becher, J.↗
NASA NTRS1982

Collisional narrowing in the optically pumped CH3OH and CH3F lasers

The gain linewidth of the optically pumped CH3F laser is observed to narrow and rebroaden with the addition of He. In addition, the same effect is observed in the CH3OH laser with the addition of the polyatomic buffer gases SF6 and CS2. These results offer conclusive evidence of the Dicke narrowing phenomena in these inverted pure rotational transitions. The effect is observed using a high harmonic mixing technique in a Schottky barrier diode.

Lawandy, N. M.↗