NASA NTRS · 20000021223
SiC-Based Gas Sensor Development
Abstract
Silicon carbide based Schottky diode gas sensors are being developed for applications such as emission measurements and leak detection. The effects of the geometry of the tin oxide film in a Pd/SnO2/SiC structure will be discussed as well as improvements in packaging SiC-based sensors. It is concluded that there is considerable versatility in the formation of SiC-based Schottky diode gas sensing structures which will potentially allow the fabrication of a SiC-based gas sensor array for a variety of gases and temperatures.
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Hunter, G. W., Neudeck, P. G., Gray, M., Androjna, D., Chen, L.-Y., Hoffman, R. W., Jr., Liu, C. C., Wu, Q. H.. 2000-01-01. SiC-Based Gas Sensor Development. https://ntrs.nasa.gov/citations/20000021223
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