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At least 253 records · Page 14
All sourcesNASA NTRSDOE OSTI
NASA NTRS1993

Ultrastable reference frequency distribution utilizing a fiber optic link

The Frequency Standards Laboratory at the Jet Propulsion Laboratory (JPL) is responsible for the generation and distribution of ultra-stable reference frequency in NASA's Deep Space Network (DSN). Certain assemblies and components of the Radio Science and VLBI systems are located in the cones of tracking antennas hundreds of meters from the Frequency and Timing Subsystem's frequency standards. The very stringent requirements of these users challenge the performance of state-of-the-art frequency sources as well as the associated signal distribution system. The reference frequency distribution system described is designed around a low temperature coefficient of delay (TCD) optical fiber. On-site measurements of the fiber optic link alone indicate 100 MHz phase noise performance on the order of -120 dBc at 1 Hz from the carrier and Allan deviation on the order of parts in 10(exp 16) at 1000 seconds averaging time. The measured phase noise and stability of the link indicate that the performance characteristics of the hydrogen maser frequency standards are not degraded by the distribution system. Thus, optical fibers and electro-optic devices as distribution media appear to be a viable alternative to the classical coaxial cable distribution systems.

Calhoun, Malcolm↗
NASA NTRS1993

Radiation effects in Ga(0.47)In(0.53)As solar cells

The effects of irradiating Ga(0.47)In(0.53)As p-i-n junctions with 1 MeV electrons were measured using Deep Level Transient Spectroscopy (DLTS) and both dark and illuminated (1 sun, air mass zero (AM0)) current-voltage (I-V) measurements. The I-V measurements were made over the range 100K less than T less than 350K. Temperature coefficients of the Ga(0.47)In(0.53)As photovoltaic parameters are presented which follow the same general behavior as other solar cell materials (e.g. Si and GaAs). Fits of the dark I-V data to the two term diode equation before irradiation were satisfactory, yielding an estimated band-gap energy of 0.79 eV. The recombination component of the dark current was found to increase linearly with fluence. DLTS detected two radiation-induced defect levels one shallow (E(sub c)-0.10 eV) and one near mid-gap (E(sub c)-0.29 eV), and it is the near mid-gap level which is expected to be the cause of the dark current increase. The radiation-induced degradation of the open circuit voltage is shown to be accurately predicted from the dark I-V measurements. The degradation of the open circuit voltage dominated the radiation response of the photovoltaic parameters while the short circuit current was only moderately degraded. This behavior is qualitatively explained in terms of the base thickness and dopant level. Appropriate changes in the device structure are suggested which should increase the radiation resistance. Isochronal thermal annealing induced recovery in the photovoltaic parameters at approximately 400K, coinciding with an annealing stage of the near mid-gap defect level.

Walters, R. J.↗
NASA NTRS1993

Results of thermal vacuum tests for the PASP+ flight modules

The PASP PLUS (Photovoltaic Array Space Power Plus Diagnostics) program is a photovoltaic experiment which will be flown on the Air Force satellite APEX (Advanced Photovoltaic And Electronic Experiment). APEX will be launched with a Pegasus during the summer of 1993. There are two other small experiments on APEX but PASP+ is the largest, uses the most power, and accounts for over 90 percent of the data requirements. The orbit is elliptical with apogee and perigee of 1050 and 190 nautical miles respectively. The inclination is 70 deg. The two main objectives of PASP+ are to determine the interactions between high voltage arrays and the space plasma environment and to determine the radiation damage characteristics of several newer types of solar cells. In order to determine the interactions with the space plasma, several of the individual cell strings will be biased to voltages up to plus or minus 500 V, and leakage currents and arcing rates will be measured. The radiation degradation characteristics will be determined by the continuous monitoring of I-V data for all of the cell strings. As part of an overall testing program, the PASP+ panels and controller were put through a thermal vacuum test in order to check the thermal analysis, obtain temperature coefficients for the individual modules, and have an end-to-end test of the entire PASP+ experiment. This thermal vacuum test is described briefly and the results obtained during that testing are discussed.

Curtis, Henry↗
NASA NTRS1994

InGaAs PV Device Development for TPV Power Systems

Indium gallium arsenide (InGaAs) photovoltaic devices have been fabricated with bandgaps ranging from 0.75 eV to 0.60 eV on Indium Phosphide (InP) substrates. Reported efficiencies have been as high as 11.2 percent (AMO) for the lattice matched 0.75 eV devices. The 0.75 eV cell demonstrated 14.8 percent efficiency under a 1500 K blackbody with a projected efficiency of 29.3 percent. The lattice mismatched devices (0.66 and 0.60 eV) demonstrated measured efficiencies of 8 percent and 6 percent respectively under similar conditions. Low long wavelength response and high dark currents are responsible for the poor performance of the mismatched devices. Temperature coefficients have been measured and are presented for all of the bandgaps tested.

Wilt, David M.↗
NASA NTRS1994

Design of high-efficiency, radiation-hard, GaInP/GaAs solar cells

In recently years, Ga(0.5)In((0.5)P/GaAs cells have drawn increased attention both because of their high efficiencies and because they are well suited for space applications. They can be grown and processed as two-junction devices with roughly twice the voltage and half the current of GaAs cells. They have low temperature coefficients, and have good potential for radiation hardness. We have previously reported the effects of electron irradiation on test cells which were not optimally designed for space. From those results we estimated that an optimally designed cell could achieve 20 percent after irradiation with 10(exp 15) cm(exp -2) 1 MeV electrons. Modeling studies predicted that slightly higher efficiencies may be achievable. Record efficiencies for EOL performance of other types of cells are significantly lower. Even the best Si and InP cells have BOL efficiencies lower than the EOL efficiency we report here. Good GaAs cells have an EOL efficiency of 16 percent. The InP/Ga(0.5)In(0.5)As two-junction, two-terminal device has a BOL efficiency as high as 22.2 percent, but radiation results for these cells were limited. In this study we use the previous modeling and irradiation results to design a set of Ga(0.5)In(0.5)P/GaAs cells that will demonstrate the importance of the design parameters and result in high-efficiency devices. We report record AMO efficiencies: a BOL efficiency of 25.7 percent for a device optimized for BOL performance and two of different designs with EOL efficiencies of 19.6 percent (at 10(exp 15) cm(exp -2) 1MeV electrons). We vary the bottom-cell base doping and the top-cell thickness to show the effects of these two important design parameters. We get an unexpected result indicating that the dopant added to the bottom-cell base also increases the degradation of the top cell.

Kurtz, Sarah R.↗
NASA NTRS1994

InGaAs PV device development for TPV power systems

Indium gallium arsenide (InGaAs) photovoltaic devices have been fabricated with bandgaps ranging from 0.75 eV to 0.60 on Indium phosphide (InP) substrates. Reported efficiencies have been as high as 11.2 percent (AMO) for the lattice matched 0.75 eV devices. The 0.75 eV cell demonstrated 14.8 percent efficiency under a 1500 K blackbody with a projected efficiency of 29.3 percent. The lattice mismatched devices (0.66 and 0.60 eV) demonstrated measured efficiencies of 8 percent and 6 percent respectively under similar conditions. Low long wavelength response and high rack currents are responsible for the poor performance of the mismatched devices. Temperature coefficients have been measured and are presented for all of the bandgaps tested.

Wilt, David M.↗
NASA NTRS1995

The progress of large area GaInP2/GaAs/Ge triple junction cell development at Spectrolab

In this paper we report the successful fabrication of large area, monolithic triple junction, n on p, GaInP2/GaAs/Ge cells. The highest open circuit voltage and cell efficiency (cell area: 4.078 sq cm) were measured at 2.573 V and 23.3%, respectively, under 1 sun, AMO illumination. To our knowledge, this is the highest single crystal, monolithic, two terminal triple junction cell efficiency demonstrated. In addition, excellent uniformity across a 3 inch diameter Ge substrates has also been achieved. An average cell efficiency of 22.8% across the 3 inch diameter wafer has been measured. We have also successfully fabricated welded cell-interconnect-cover (CIC) assemblies using these triple junction devices. The highest CIC efficiency was 23.2% (bare cell efficiency was 23.3%). The average efficiency for 25 CICs was 21.8%, which is very comparable to the 22.0% average bare cell efficiency before they were fabricated into the CICs. Finally, we have measured temperature coefficient and 1 MeV electron irradiation data. These will be presented in the paper.

Chiang, P. K.↗
NASA NTRS1995

Determination of the electrical conductivity of liquid Ge(0.95)Si(0.05)

We have measured the electrical conductivity of molten germanium-silicon Ge(0.95)Si(0.05) from the liquidus temperature (1050 C) up to 1220 C. The data were acquired with a unique apparatus which utilizes the standard four-probe technique. The basic unit consists of a fused silica enclosure that contains hermetic glass-to-tungsten seals that can support vacuum pressures down to 10(exp -7) Torr. With calibration, the measurement error for the low vapor pressure materials of this study was typically less than 7%. The temperature dependence of the electrical conductivity of a Ge(0.95)Si(0.05) melt was found to vary from approximately 22,300/ohm/cm at the liquidus temperature down to approximately 16,000/ohm/cm at 1220 C. The negative temperature coefficient as well as the magnitude of these data clearly indicate that the molten material is metallic in nature despite the semiconducting properties of the solid.

Rolin, T. D.↗
NASA NTRS1995

A polyimide molecular composite

A polyimide is a hard and sturdy thermoplastic made from the combination of tetracarboxylic dianhydrides and diamines in a polar aprotic solvent. A series of polyimide blends comprising of a tough moldable, wholly aromatic polyimide and a highly crystalline rigid polyimide were prepared. The flexible polyimide was based on LaRC-SI with a 2% offset, and the rigid polyimide as based on para-phenylenediamine and biphenyltetracarboxylic dinnhydride encapped with pthalic anhydride. The polyimide blends were cast as films and cured at 100, 200, and 300 C in air. These films were characterized by finding their glass-transition temperature, melting temperature, coefficient of thermal expansion, tensile modulus, tensile strength, and percent elongation. These characterizations found out which polyimide blend had exceptional mechanical and thermal properties. Experimental results showed the following: (1) A blend with increasing amounts of flexible polyimide produced a better film; (2) A blend with increasing amounts of rigid polyimide produced a brittle film; (3) LaRC-SI (2% offset) tended to phase separate during film casting; (4) Most of the films produced were brittle; and (5) There was an inability to obtain mechanical and thermal properties due to having brittle film. These conclusions demonstrate the difficulty in producing a polyimide blend comprising two physically distinct polyimides. Combining a polysmide with a poly(amic acid) thermosett could be the next phase of research in polyimide synthesis.

Hart, Aprill J.↗
NASA NTRS1999

Modeling of SiC Lateral Resonant Devices Over a Broad Temperature Range

Finite-element analysis (FEA) modal results of 3C-SiC lateral resonant devices anchored to a Si substrate are presented as resonant frequency versus temperature. The suspended elements are etched from a 2 micron, 3C-SiC film grown at 1600 K on a 500 micron-thick, Si substrate. The analysis includes, temperature-dependent properties, shape change due to volume expansion with temperature, and thermal stress caused by differential thermal expansion of different materials. Two designs are considered: type I has anchor locations close to the geometric centroid and a small shuttle; type 11 has a large shuttle with anchors far from the centroid, The resonant frequency decreases approximately 3.5% over a 1000 K temperature increase for the type-I device, and behaves according to theory. The resonant frequency of the type-11 device decreases by 2% over the first 400 K, then rises slightly over the remaining 600 K. This device deviates from theory because of the high thermal stress induced in the beams. The thermal stress is caused by the differential thermal expansion of the suspended element relative to the substrate. The results show that the device geometry must be properly chosen if the resonant frequency of that device will be used to calculate the temperature coefficient of Young's modulus. These results apply only to resonators of one material on a substrate of a different material.

DeAnna, Russell G.↗
NASA NTRS1999

Study of Bulk and Elementary Screw Dislocation Assisted Reverse Breakdown in Low-Voltage (< 250 V) 4H-SiC p(sup +)n Junction Diodes--Part II: Dynamic Breakdown Properties: Dynamic Breakdown Properties - Part 2

This paper outlines the dynamic reverse-breakdown characteristics of low-voltage (<250 V) small-area <5 x 10(exp -4) sq cm 4H-SiC p(sup +)n diodes subjected to nonadiabatic breakdown-bias pulsewidths ranging from 0.1 to 20 microseconds. 4H-SiC diodes with and without elementary screw dislocations exhibited positive temperature coefficient of breakdown voltage and high junction failure power densities approximately five times larger than the average failure power density of reliable silicon pn rectifiers. This result indicates that highly reliable low-voltage SiC rectifiers may be attainable despite the presence of elementary screw dislocations. However, the impact of elementary screw dislocations on other more useful 4H-SiC power device structures, such as high-voltage (>1 kV) pn junction and Schottky rectifiers, and bipolar gain devices (thyristors, IGBT's, etc.) remains to be investigated.

Neudeck, Philip G.↗
NASA NTRS1994

InGaAs PV Device Development for TPV Power Systems

lndium Gallium Arsenide (InGaAs) photovoltaic devices have been fabricated with bandgaps ranging from 0.75 eV to 0.60 eV on Indium Phosphide (InP) substrates. Reported efficiencies have been as high as 11.2% (AMO) for the lattice matched 0.75 eV devices. The 0.75 eV cell demonstrated 14.8% efficiency under a 1500 K blackbody with a projected efficiency of 29.3%. The lattice mismatched devices (0.66 and 0.60 eV) demonstrated measured efficiencies of 8% and 6% respectively under similar conditions. Low long wavelength response and high dark currents are responsible for the poor performance of the mismatched devices. Temperature coefficients have been measured and are presented for all of the bandgaps tested.

Wilt, David M.↗
NASA NTRS2004

Progress in the Multijunction Solar Cell Mantech Program

In September, 1995, the joint Wright Laboratory/Phillips Laboratory/NASA Lewis Multijunction Solar Cell Manufacturing Technology (ManTech) Program began to improve multijunction cell performance and scale them up to production size and quantity to support Air Force and commercial satellite programs. The first milestone of the program has been reached and the purpose of this paper is to present the results of the program so far. The objectives of the Multijunction Solar Cell ManTech Program are to increase the GaInP2/GaAs/Ge lot average cell efficiency to 24-26%, increase the cell size to > or equal to 16 sq cm while maintaining high efficiency, and limit the per cell costs to < or equal to 1.15X state of the art GaAs/Ge cells. Advanced manufacturing technology and process control techniques such as in-situ process monitoring and real time process feedback are being used to optimize multijunction solar cell growth processes to achieve these goals. This paper will discuss progress made in Phase I of the program and give an overview of Phase II but will focus on side-by-side testing results collected by Phillips Laboratory and NASA Lewis on Phase I deliverable cells from both vendors. Cell performance, pre- and post radiation, and temperature coefficient results on initial production multijunction solar cells will be presented and discussed. The data shows that this technology meets the objectives of the program, and that, in the interim before a new solar simulation standard becomes widely available, the measurement techniques being used by the major space solar cell manufacturers are providing adequate testing results for solar array design.

Keener, David N.↗
NASA NTRS2005

Physics of Quantum Structures in Photovoltaic Devices

There has been considerable activity recently regarding the possibilities of using various nanostructures and nanomaterials to improve photovoltaic conversion of solar energy. Recent theoretical results indicate that dramatic improvements in device efficiency may be attainable through the use of three-dimensional arrays of zero-dimensional conductors (i.e., quantum dots) in an ordinary p-i-n solar cell structure. Quantum dots and other nanostructured materials may also prove to have some benefits in terms of temperature coefficients and radiation degradation associated with space solar cells. Two-dimensional semiconductor superlattices have already demonstrated some advantages in this regard. It has also recently been demonstrated that semiconducting quantum dots can also be used to improve conversion efficiencies in polymeric thin film solar cells. Improvement in thin film cells utilizing conjugated polymers has also be achieved through the use of one-dimensional quantum structures such as carbon nanotubes. It is believed that carbon nanotubes may contribute to both the disassociation as well as the carrier transport in the conjugated polymers used in certain thin film photovoltaic cells. In this paper we will review the underlying physics governing some of the new photovoltaic nanostructures being pursued, as well as the the current methods being employed to produce III-V, II-VI, and even chalcopyrite-based nanomaterials and nanostructures for solar cells.

Raffaelle, Ryne P.↗
NASA NTRS2005

Miniature Instrumentation for SIPR (Subsurface Ice PRobe)

Ice coring has proved to be a valuable scientific tool for determining climate history on Earth. The goal of the SIPR project is to develop a simple extraterrestrial ice sampling method of comparable value to coring. The SIPR probe works by melting its way through glacial ice, pumping the melt water to the surface for analysis as it descends hundreds of meters. The specific geometry of the probe, along with size and power constraints, requires creative diagnostic instrumentation. A thin, vertically strung heated filament will provide continuous-level monitoring of water in down-hole containers. The filament has an appreciable temperature coefficient to resistance (TCR), so as water cools the wire, its resistance decreases. At a constant electrical current, the voltage across the filament varies linearly with water level.

Ostmo, Karl P.↗
NASA NTRS2007

Space and Terrestrial Power System Integration Optimization Code BRMAPS for Gas Turbine Space Power Plants With Nuclear Reactor Heat Sources

In view of the difficult times the US and global economies are experiencing today, funds for the development of advanced fission reactors nuclear power systems for space propulsion and planetary surface applications are currently not available. However, according to the Energy Policy Act of 2005 the U.S. needs to invest in developing fission reactor technology for ground based terrestrial power plants. Such plants would make a significant contribution toward drastic reduction of worldwide greenhouse gas emissions and associated global warming. To accomplish this goal the Next Generation Nuclear Plant Project (NGNP) has been established by DOE under the Generation IV Nuclear Systems Initiative. Idaho National Laboratory (INL) was designated as the lead in the development of VHTR (Very High Temperature Reactor) and HTGR (High Temperature Gas Reactor) technology to be integrated with MMW (multi-megawatt) helium gas turbine driven electric power AC generators. However, the advantages of transmitting power in high voltage DC form over large distances are also explored in the seminar lecture series. As an attractive alternate heat source the Liquid Fluoride Reactor (LFR), pioneered at ORNL (Oak Ridge National Laboratory) in the mid 1960's, would offer much higher energy yields than current nuclear plants by using an inherently safe energy conversion scheme based on the Thorium --> U233 fuel cycle and a fission process with a negative temperature coefficient of reactivity. The power plants are to be sized to meet electric power demand during peak periods and also for providing thermal energy for hydrogen (H2) production during "off peak" periods. This approach will both supply electric power by using environmentally clean nuclear heat which does not generate green house gases, and also provide a clean fuel H2 for the future, when, due to increased global demand and the decline in discovering new deposits, our supply of liquid fossil fuels will have been used up. This is expected within the next 30 to 50 years, as predicted by the Hubbert model and confirmed by other global energy consumption prognoses. Having invested national resources into the development of NGNP, the technology and experience accumulated during the project needs to be documented clearly and in sufficient detail for young engineers coming on-board at both DOE and NASA to acquire it. Hands on training on reactor operation, test rigs of turbomachinery, and heat exchanger components, as well as computational tools will be needed. Senior scientist/engineers involved with the development of NGNP should also be encouraged to participate as lecturers, instructors, or adjunct professors at local universities having engineering (mechanical, electrical, nuclear/chemical, and/or materials) as one of their fields of study.

Juhasz, Albert J.↗
NASA NTRS1987

Temperature responsive transmitter

A temperature responsive transmitter is provided in which frequency varies linearly with temperature. The transmitter includes two identically biased transistors connected in parallel. A capacitor, which reflects into the common bases to generate negative resistance effectively in parallel with the capacitor, is connected to the common emitters. A crystal is effectively in parallel with the capacitor and the negative resistance. Oscillations occur if the magnitude of the absolute value of the negative resistance is less than the positive resistive impedance of the capacitor and the inductance of the crystal. The crystal has a large linear temperature coefficient and a resonant frequency which is substantially less than the gain-bandwidth product of the transistors to ensure that the crystal primarily determines the frequency of oscillation. A high-Q tank circuit having an inductor and a capacitor is connected to the common collectors to increase the collector current flow which in turn enhances the radiation of the oscillator frequency by the inductor.

Kleinberg, Leonard L.↗
NASA NTRS2006

Lithium-Ion Small Cell Battery Shorting Study

Positive Temperature Coefficient (PTC) provides adequate sustained hard short protection for AEA batteries with up to 8 cells in series. PTC cannot protect against sustained hard short in AEA batteries with 10 cells or more in series. Protective fused connector is a proven way to protect larger batteries from hard short damage: a) Hard short not credible in unmanned missions; b) However, recommended during ground handling; c) Inexpensive item. Preliminary diode protection scheme has passed manned space safety requirements for high voltage batteries. SCM confirmed fused connector did not affect battery health, however, this affect of hard short on the its long calendar and cycle life performance needs to be verified.

Pearson, Chris↗