Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “Semiconductor lasers”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 253 records · Page 14

Observations and consequences of nonuniform aluminum concentrations in the channel regions of AlGaAs channeled-substrate-planar lasers

Compositional changes in the n-clad layer within the channel region of channel substrate planar (CSP) type semiconductor lasers have been observed. As a consequece, a large optical cavity (LOC) or an enhanced substrate loss (ESL) version of the CSP geometry may result, both of which may have significantly different characteristics from those of a conventional CSP laser. The CSP-LOC generally has a larger near-field spot size, while the ESL-CSP is characterized by an off-axis, asymmetric far-field pattern.

Evans, Gary A.↗

Laser to single-mode-fiber coupling: A laboratory guide

All the information necessary to achieve reasonably efficient coupling of semiconductor lasers to single mode fibers is collected from the literature, reworked when necessary, and presented in a mostly tabular form. Formulas for determining the laser waist radius and the fiber mode radius are given. Imaging relations connecting these values with the object and image distances are given for three types of lenses: ball, hemisphere, and Gradient Index (GRIN). Sources for these lenses are indicated, and a brief discussion is given about ways of reducing feedback effects.

Ladany, I.↗

Optical communications and a comparison of optical technologies for a high data rate return link from Mars

The important principles of direct- and heterodyne-detection optical free-space communications are reviewed. Signal-to-noise-ratio (SNR) and bit-error-rate (BER) expressions are derived for both the direct-detection and heterodyne-detection optical receivers. For the heterodyne system, performance degradation resulting from received-signal and local oscillator-beam misalignment and laser phase noise is analyzed. Determination of interfering background power from local and extended background sources is discussed. The BER performance of direct- and heterodyne-detection optical links in the presence of Rayleigh-distributed random pointing and tracking errors is described. Finally, several optical systems employing Nd:YAG, GaAs, and CO2 laser sources are evaluated and compared to assess their feasibility in providing high-data-rate (10- to 1000-Mbps) Mars-to-Earth communications. It is shown that the root mean square (rms) pointing and tracking accuracy is a critical factor in defining the system transmitting laser-power requirements and telescope size and that, for a given rms error, there is an optimum telescope aperture size that minimizes the required power. The results of the analysis conducted indicate that, barring the achievement of extremely small rms pointing and tracking errors (less than 0.2 microrad), the two most promising types of optical systems are those that use an Nd:YAG laser (lambda = 1.064 microns) and high-order pulse position modulator (PPM) and direct detection, and those that use a CO2 laser (lambda = 10.6 microns) and phase shifting keying homodyne modulation and coherent detection. For example, for a PPM order of M = 64 and an rms pointing accuracy of 0.4 microrad, an Nd:YAG system can be used to implement a 100-Mbps Mars link with a 40-cm transmitting telescope, a 20-W laser, and a 10-m receiving photon bucket. Under the same conditions, a CO2 system would require 3-m transmitting and receiving telescopes and a 32-W laser to implement such a link. Other types of optical systems, such as a semiconductor laser systems, are impractical in the presence of large rms pointing errors because of the high power requirements of the 100-Mbps Mars link, even when optimal-size telescopes are used.

Spence, Rodney L.↗

Coherent Doppler lidar for automated space vehicle, rendezvous, station-keeping and capture

Recent advances in eye-safe, short wavelength solid-state lasers offer real potential for the development of compact, reliable, light-weight, efficient coherent lidar. Laser diode pumping of these devices has been demonstrated, thereby eliminating the need for flash lamp pumping, which has been a major drawback to the use of these lasers in space based applications. Also these lasers now have the frequency stability required to make them useful in coherent lidar, which offers all of the advantages of non-coherent lidar, but with the additional advantage that direct determination of target velocity is possible by measurement of the Doppler shift. By combining the Doppler velocity measurement capability with the inherent high angular resolution and range accuracy of lidar it is possible to construct Doppler images of targets for target motion assessment. A coherent lidar based on a Tm,Ho:YAG 2-micrometer wavelength laser was constructed and successfully field tested on atmospheric targets in 1990. This lidar incorporated an all solid state (laser diode pumped) master oscillator, in conjunction with a flash lamp pumped slave oscillator. Solid-state laser technology is rapidly advancing, and with the advent of high efficiency, high power, semiconductor laser diodes as pump sources, all-solid-state, coherent lidars are a real possibility in the near future. MSFC currently has a feasibility demonstration effort under way which will involve component testing, and preliminary design of an all-solid-state, coherent lidar for automatic rendezvous, and capture. This two year effort, funded by the Director's Discretionary Fund is due for completion in 1992.

Dunkin, James A.↗

Impulse Response Functions for Characterizing Pulse-to-Pulse Junction Temperature Behavior in Laser Diode Pulse Trains

A method is proposed for determination of the pulse-to-pulse variation in junction temperature and emission wavelength of a semiconductor laser diode during a train of pulses. Here, this approach, based on impulse response functions, enables predictions for pulse trains with arbitrary pulse-to-pulse variations in output power, pulse width, and pulse delay using a limited set of experimental characterization data. The use of this approach is illustrated by application to a particular device structure.

Deri, Robert J. [Lawrence Livermore National Labor↗

Time-resolved far-field analysis of a high power single emitter laser diode

A system was developed which is capable of measuring the time-resolved far-field radiation patterns from a high-power semiconductor laser under intensity modulated conditions. Angular steering of the fundamental spatial mode was observed, with pointing variations as large as 0.5 deg, or 7.5 percent of the beamwidth, during the time of the optical pulse. The variations in pointing angle were directly related to gradients in the transverse index profile of the laser, which may oscillate based on lateral spatial hole burning of the gain and carrier density.

Cornwell, Donald M., Jr.↗

1.54 micron Emission from Erbium implanted GaN for Photonic Applications

The development of efficient and compact light sources operating at 1.54 micron is of enormous importance for the advancement of new optical communication systems. Erbium (1%) doped fiber amplifiers (EDFA's) or semiconductor lasers are currently being employed as near infrared light sources. Both devices, however, have inherent limitations due to their mode of operation. EDFA's employ an elaborate optical pumping scheme, whereas diode lasers have a strongly temperature dependent lasing wavelength. Novel light emitters based on erbium doped III-V semiconductors could overcome these limitations. Er doped semiconductors combine the convenience of electrical excitation with the excellent luminescence properties of Er(3+) ions. Electrically pumped, compact, and temperature stable optoelectronic devices are envisioned from this new class of luminescent materials. In this paper we discuss the potential of Er doped GaN for optoelectronic applications based on temperature dependent photoluminescence excitation studies.

Thaik, Myo↗

Growing High-Quality InAs Quantum Dots for Infrared Lasers

An improved method of growing high-quality InAs quantum dots embedded in lattice-matched InGaAs quantum wells on InP substrates has been developed. InAs/InGaAs/InP quantum dot semiconductor lasers fabricated by this method are capable of operating at room temperature at wavelengths greater than or equal to 1.8 mm. Previously, InAs quantum dot lasers based on InP substrates have been reported only at low temperature of 77 K at a wavelength of 1.9 micrometers. In the present method, as in the prior method, one utilizes metalorganic vapor phase epitaxy to grow the aforementioned semiconductor structures. The development of the present method was prompted in part by the observation that when InAs quantum dots are deposited on an InGaAs layer, some of the InAs in the InGaAs layer becomes segregated from the layer and contributes to the formation of the InAs quantum dots. As a result, the quantum dots become highly nonuniform; some even exceed a critical thickness, beyond which they relax. In the present method, one covers the InGaAs layer with a thin layer of GaAs before depositing the InAs quantum dots. The purpose and effect of this thin GaAs layer is to suppress the segregation of InAs from the InGaAs layer, thereby enabling the InAs quantum dots to become nearly uniform (see figure). Devices fabricated by this method have shown near-room-temperature performance.

Qiu, Yueming↗

Semiconductor ohmic contact

Contact formed on p-type surface of semiconductor laser has several advantages: highly conductive degenerate region and narrow band gap provides surface for good metal-to-semiconductor contact; lattice parameter of GaAs is 5.6533 A; improved lattice match eases interface strain which reduces interface cracking of semiconductor material.

Hawrylo, F. Z.↗

Characteristics of the Single-Longitudinal-Mode Planar-Waveguide External Cavity Diode Laser at 1064 nm

We describe the characteristics of the planar-waveguide external cavity diode laser (PW-ECL). To the best of our knowledge, it is the first butterfly-packaged 1064-nm semiconductor laser that is stable enough to be locked to an external frequency reference. We evaluated its performance from the viewpoint of precision experiments. Especially, using a hyperfine absorption line of iodine, we suppressed its frequency noise by a factor of up to104 at 10 mHz. The PW-ECLs compactness and low cost make it a candidate to replace traditional Nd:YAGnon-planar ring oscillators and fiber lasers in applications which require a single longitudinal-mode.

diode↗

Characteristics of the Single-Longitudinal-Mode Planar-Waveguide External Cavity Diode Laser at 1064 nm

We describe the characteristics of the planar-waveguide external cavity diode laser (PW-ECL). To the best of our knowledge, it is the first butterfly-packaged 1064 nm semiconductor laser that is stable enough to be locked to an external frequency reference. We evaluated its performance from the viewpoint of precision experiments. Using a hyperfine absorption line of iodine, we suppressed its frequency noise by a factor of up to 104 at 10 mHz. The PWECL's compactness and low cost make it a candidate to replace traditional Nd:YAG nonplanar ring oscillators and fiber lasers in applications that require a single longitudinal mode.

planar-waveguide↗

Spatiospectral and picosecond spatiotemporal properties of a broad area operating channeled-substrate-planar laser array

Spatiospectral and spatiotemporal properties of an eight-element channeled-substrate-planar laser array are investigated in both CW and pulsed operating conditions. The closely spaced CSP array with strong optical coupling between array elements is characterized by a broad area laserlike operation determined by its spatial mode spectra. The spatiotemporal evolution of the near and far field exhibits complex dynamic behavior in the picosecond to nanosecond domain. Operating parameters for the laser device have been experimentally determined. These results provide important information for the evaluation of the dynamic behavior of coherent semiconductor laser arrays.

Yu, NU↗

36 Hz integral linewidth laser based on a photonic integrated 4.0 m coil resonator

Laser stabilization sits at the heart of many precision scientific experiments and applications, including quantum information science, metrology, and atomic timekeeping. Many of these systems narrow the laser linewidth and stabilize the carrier by use of Pound–Drever–Hall (PDH) locking to a table-scale, ultrahigh quality factor (Q), vacuum spaced Fabry–Perot reference cavity. Integrating these cavities to bring characteristics of PDH stabilization to the chip scale is critical to reducing their size, cost, and weight, and enabling a wide range of portable and system-on-chip applications. We report a significant advance in integrated laser linewidth narrowing, stabilization, and noise reduction by use of a photonic integrated 4.0 m long coil resonator to stabilize a semiconductor laser. We achieve a 36 Hz 1 / π <#comment/> -integral linewidth, Allan deviation of 1.8 × <#comment/> 10 − <#comment/> 13 at 10 ms measurement time, and a 2.3 kHz/s drift—to the best of our knowledge, the lowest integral linewidth and highest stability demonstrated for an integrated waveguide reference cavity. This performance represents over an order of magnitude improvement in integral linewidth and frequency noise over previous integrated waveguide PDH stabilized reference cavities and bulk-optic and integrated injection locked approaches, and over two orders of magnitude improvement in frequency and phase noise than integrated injection locked approaches. Two different wavelength coil designs are demonstrated, stabilizing lasers at 1550 nm and 1319 nm. The resonator is bus-coupled to a 4.0 m long coil, with a 49 MHz free spectral range, mode volume of 1.0 × <#comment/> 10 10 µ <#comment/> m 3 , and 142 million intrinsic Q , fabricated in a CMOS compatible, ultralow loss silicon nitride waveguide platform. Our measurements and simulations show that the thermorefractive noise floor for this particular cavity is reached for frequencies down to 20 Hz in an ambient environment with simple passive vibration isolation and without vacuum or thermal isolation. The thermorefractive noise limited performance is estimated to yield an 8 Hz 1 / π <#comment/> -integral linewidth and Allan deviation of 5 × <#comment/> 10 − <#comment/> 14 at 10 ms, opening a stability regime that heretofore has been available only in fundamentally non-integrated systems. These results demonstrate the potential to bring the characteristics of laboratory-scale stabilized lasers to the integrated, wafer-scale compatible chip scale, and are of interest for a number of applications in quantum technologies and atomic, molecular, and optical physics, and with further developments below 10 Hz linewidth, can be highly relevant to ultralow noise microwave generation.

Liu, Kaikai (ORCID:0000000213609646)↗

Atomic Force Microscope Active Optical Probe for Single-Molecule Imaging and Time-Resolved Optical Spectroscopy (DOE SBIR Phase II/IIA Final Report)

Actoprobe LLC reports on the results of its DOE SBIR Phase II/IIA project on the development of Atomic Force Microscope Active Optical Probe for Single-Molecule Imaging and Time-Resolved Optical Spectroscopy. While chemistry science and technology greatly benefit from Atomic Force Microscopy in surface characterization, time-resolved chemical imaging on the single-molecule level lags far behind. Current scanning probe microscopy only obtains information about mechanical but not optical/chemical properties. To address this problem, the Actoprobe LLC research team has proposed a novel class of Atomic Force Microscopy probes, Ultra-Fast Pulsed Active Atomic Force Microscopy Optical Probes (UFP AAOPs), that will allow ultrafast time-resolved optical and chemical imaging at the nanoscale. As envisioned, these unique optical probes will perform the functions of conventional Atomic Force Microscopy probes and, in addition, will simultaneously provide chemical information about molecular scale interactions. This innovation is accomplished by integrating an ultrafast pulsed Quantum Dot laser source into an Atomic Force Microscopy probe. This report describes our progress with the fabrication of an ultrafast micrometer-size semiconductor laser, based on “artificial atoms” - Quantum Dots, integrated with an Atomic Force Microscopy probe. In this Phase II/IIA project, we have demonstrated the feasibility of the UFP AAOP concept by fabricating a first prototype of the UFP AAOP. The excellent performance of the probe has been proven in terms of AFM and optical spatial resolution through rigorous tests. The UFP AAOP provides pulses with less than 4 ps duration and higher than 11 GHz repetition rate, and spatial resolution better than 300 nm at 1240 nm wavelength. Technically, it is possible to reduce the pulse width to less than 1 ps and to improve lateral resolution to ~ 0.5 nm, which implies the potential capability for the probe to characterize chemical compounds with single-molecule resolution. The UFP AAOP fabrication procedure has been developed for wafer-scale production of multiple devices, with the yield of the process estimated to be lower than 1% with the limited fabrication capabilities and equipment available for use in the research project. However, using high-volume production tools and special GaAs processing equipment, the yield can be significantly improved, theoretically to ~ 50%. Finally, economic feasibility and scale-up manufacturing potential were analyzed for UFP AAOP and found to be very promising. In summary, the Actoprobe team has successfully demonstrated the feasibility of the UFP AAOP concept.

36 MATERIALS SCIENCE↗

Wavelength Locking to CO2 Absorption Line-Center for 2-Micron Pulsed IPDA Lidar Application

An airborne 2-micron triple-pulse integrated path differential absorption (IPDA) lidar is currently under development at NASA Langley Research Center (LaRC). This IPDA lidar system targets both atmospheric carbon dioxide (CO2) and water vapor (H2O) column measurements. Independent wavelength control of each of the transmitted laser pulses is a key feature for the success of this instrument. The wavelength control unit provides switching, tuning and locking for each pulse in reference to a 2-micron CW (Continuous Wave) laser source locked to CO2 line-center. Targeting the CO2 R30 line center, at 2050.967 nanometers, a wavelength locking unit has been integrated using semiconductor laser diode. The CO2 center-line locking unit includes a laser diode current driver, temperature controller, center-line locking controller and CO2 absorption cell. This paper presents the CO2 center-line locking unit architecture, characterization procedure and results. Assessment of wavelength jitter on the IPDA measurement error will also be addressed by comparison to the system design.

Refaat, Tamer F.↗

Cubic GaS: A Surface Passivator For GaAs

Thin films of cubic form of gallium sulfide (GaS) formed on surfaces of gallium arsenide (GaAs) substrates via metal/organic chemical vapor deposition (MOCVD). Deposited cubic GaS, crystalline lattice matched to substrate GaAs, neutralizes electrically active defects on surfaces of both n-doped and p-doped GaAs. Enabling important GaAs-based semiconducting materials to serve as substrates for metal/insulator/semiconductor (MIS) capacitors. Cubic GaS enables fabrication of ZnSe-based blue lasers and light-emitting diodes. Because GaS is optically transparent, deposited to form window layers for such optoelectronic devices as light-emitting diodes, solar optical cells, and semiconductor lasers. Its transparency makes it useful as interconnection material in optoelectronic integrated circuits. Also useful in peeled-film technology because selectively etched from GaAs.

Hepp, Aloysius F.↗

Comparison of Square and Radial Geometries for High Intensity Laser Power Beaming Receivers

In an effort to further advance a realizable form of wireless power transmission (WPT), high intensity laser power beaming (HILPB) has been developed for both space and terrestrial applications. Unique optical-to-electrical receivers are employed with near infrared (IR-A) continuous-wave (CW) semiconductor lasers to experimentally investigate the HILPB system. In this paper, parasitic feedback, uneven illumination and the implications of receiver array geometries are considered and experimental hardware results for HILPB are presented. The TEM00 Gaussian energy profile of the laser beam presents a challenge to the effectiveness of the receiver to perform efficient photoelectric conversion, due to the resulting non-uniform illumination of the photovoltaic cell arrays. In this investigation, the geometry of the receiver is considered as a technique to tailor the receiver design to accommodate the Gaussian beam profile, and in doing so it is demonstrated that such a methodology is successful in generating bulk receiver output power levels reaching 25 W from 7.2 sq cm of photovoltaic cells. These results are scalable, and may be realized by implementing receiver arraying and utilizing higher power source lasers to achieve a 1.0 sq m receiver capable of generating over 30 kW of electrical power. This type of system would enable long range optical "refueling" of electric platforms, such as MUAV s, airships, robotic exploration missions and provide power to spacecraft platforms which may utilize it to drive electric means of propulsion. In addition, a smaller HILPB receiver aperture size could be utilized to establish a robust optical communications link within environments containing high levels of background radiance, to achieve high signal to noise ratios.

Raible, Daniel E.↗