NASA NTRS · 19760000461
Semiconductor ohmic contact
Abstract
Contact formed on p-type surface of semiconductor laser has several advantages: highly conductive degenerate region and narrow band gap provides surface for good metal-to-semiconductor contact; lattice parameter of GaAs is 5.6533 A; improved lattice match eases interface strain which reduces interface cracking of semiconductor material.
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Hawrylo, F. Z., Kressel, H.. 1977-03-01. Semiconductor ohmic contact. https://ntrs.nasa.gov/citations/19760000461
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