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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 253 records · Page 14
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

Electronic states and phonon properties of Ge{sub x}Si{sub 1−x} nanostructures

Ge{sub x}Si{sub 1−x} nanostructures that can be manipulated through size reduction, geometry variation, and alloying, are considered as one of the key developments for next generation technologies, due to their easy processing, unique properties, and compatibility with the existent silicon-based microelectronic industry. In this review, we have thoroughly discussed the major advances in electronic structures and phonon properties of Ge{sub x}Si{sub 1−x} nanocrystals (NCs). Experimental and theoretical characterization related to several main factors, for example, size, composition, strain, temperature, and interface and surface were presented with special emphasis in low-frequency Raman scattering. Current difficulties in explaining the Raman spectra are the assignment of the low-frequency modes because of the complexity of the environment around the NCs, thus different theoretical models are introduced in detail to deal with different properties of Ge{sub x}Si{sub 1−x} alloy NCs including Lamb’s theory, complex-frequency (CF) model, core–shell matrix (CMS) model and spatial coherence effect model. - Highlights: • Major advances in electronic structures and phonon properties of Ge{sub x}Si{sub 1−x} nanocrystals are discussed thoroughly. • Experimental and theoretical characterization related to size, composition, strain, temperature, and interface/surface are elucidated. • Low-frequency Raman spectra are specially described based on spatial coherence effect model.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Uranium integral fission product yields for a spectrally-shaped 14.1 MeV neutron source at the National Ignition Facility

This paper describes the experimental results for an energy tuning assembly created to modify the National Ignition Facility deuterium–tritium fusion neutron source into a notional thermonuclear and prompt fission neutron spectrum, which has applications in integral measurements, nuclear data benchmarks, and radiation effects on microelectronics. The Monte Carlo neutron transport utilized MCNP5 to estimate the ETA-modified fluence using the ENDF-B/VIII.0 and IRDFF-II continuous energy nuclear data libraries, and SCALE Sampler was used to estimate the systematic nuclear data covariance using ENDF-B/VII.1 and IRDFF-II in a 252-group structure. The experiment fielded eight activation foils and a highly enriched uranium sample. This provided fifteen reaction channels that were used in a forward-fit comparison to the modeled results and to unfold the neutron spectrum using STAYSL. Gamma-ray spectrometry was performed on the activation and highly enriched uranium foils, and the reduced Χ 2 between the modeled and experimental values was 1.21. The results from the STAYSL unfold, reduced Χ 2 = 1.62, indicated that the modeled neutron spectrum was achieved and the systematic nuclear data uncertainty associated with the neutron transport and activation product cross sections was representative of the experiment. Integral cumulative fission product yield data were collected for 37 mass chains with a combination of gamma-ray spectrometry and radiochemical analysis. Fission product analysis was generally in agreement with two models using a semi-empirical fit and the General Observables of Fission code, with the exception of mass chains 88, 109, 111, 112, 113, 129, 139, 142, 144, 151, and 156.

38 RADIATION CHEMISTRY, RADIOCHEMISTRY, AND NUCLEA↗
DOE OSTI2025

Site-specific surface reactivity on MgO for atomic layer deposition via selective hydration

Atomic layer deposition (ALD) is a powerful technique for thin film synthesis, offering atomic-scale precision and conformality. While ALD of MgO has been widely studied for applications in energy storage and microelectronics, its potential as surface on which deposition may be selective and defects repaired remains underexplored. Here, we present a combined theoretical and experimental investigation of MgO surface hydration and its implications for targeted ALD growth using water and dimethyl aluminum isopropoxide (DMAI) as reactants. We perform density functional theory (DFT) calculations to examine molecular and dissociative H 2 O adsorption on MgO (100) terraces and step-edge sites, including pristine surfaces and those with Mg/O vacancies. Reaction Gibbs free energies are calculated under various conditions to quantify surface reactivity. Our findings reveal facet- and defect-dependent hydration behaviors that align with experimental ALD growth trends on MgO (100). This study provides a molecular-level understanding of MgO surface chemistry critical for optimizing ALD processes for thin film growth and defect repair.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2015

Multiple-phase carbon-coated FeSn 2 /Sn nanocomposites for high-frequency microwave absorption

Rapid expansion in microelectronic devices has prompted increasing research efforts in development of high-frequency electromagnetic wave absorption materials. Multiple-phase FeSn 2 /Sn/Graphite core-shell nanoparticles synthesized by an arc-discharge method, with controllable components and structures, present a typical cloaking feature aroused from the superior electromagnetic wave absorption. Based on transmission line theory, we prove quantitatively that more than 90% of the electromagnetic power can be attenuated at 9-18 GHz. Finally, experimental results coupled with theory calculations by the Cole-Cole equation and the eddy-current model, further reveal that such high performances are originated from the onion-type interfacial architecture at nanoscale and the desirable impedance match resulting from multiple phase components.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Dy uniform film morphologies on graphene studied with SPA-LEED and STM

The use of graphene for microelectronics and spintronic applications requires strategies for metals to wet graphene and to grow layer-by-layer. This is especially important when metals will be used as electrical contacts or as spin filters. Extensive work in the literature so far has shown that this is very challenging, since practically all metals grow 3D, with multi-height islands forming easily. Reasons for the 3D morphology are the much weaker metal carbon bond when compared to the metal cohesive energy and the role of Coulomb repulsion of the poorly screened charges at the metal graphene interface. We employed the complementary techniques of SPA-LEED and STM to study the growth of Dy on graphene. It was found that under kinetic limitations it is possible to fully cover graphene with a bilayer Dy film, by growing well below room temperature in stepwise deposition experiments. Lastly, the Dy film, however, is amorphous but ways to crystallize it within the 2D morphology are possible, since long range order improves at higher growth temperature.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Integrating carbon nanotube forests into polysilicon MEMS: Growth kinetics, mechanisms, and adhesion

The growth of carbon nanotubes (CNTs) on polycrystalline silicon substrates was studied to improve the design of CNT field emission sources for microelectromechanical systems (MEMS) applications and vacuum microelectronic devices (VMDs). Microwave plasma-enhanced chemical vapor deposition (PECVD) was used for CNT growth, resulting in CNTs that incorporate the catalyst particle at their base. The kinetics of CNT growth on polysilicon were compared to growth on Si (100) using the model of Deal and Grove, finding activation energies of 1.61 and 1.54 eV for the nucleation phase of growth and 1.90 and 3.69 eV for the diffusion-limited phase on Si (100) and polysilicon, respectively. Diffusivity values for growth on polysilicon were notably lower than the corresponding values on Si (100) and the growth process became diffusion-limited earlier. Evidence favors a surface diffusion growth mechanism involving diffusion of carbon precursor species along the length of the CNT forest to the catalyst at the base. Explanations for the differences in activation energies and diffusivities were elucidated by SEM analysis of the catalyst nanoparticle arrays and through wide-angle X-ray scattering (WAXS) of CNT forests. As a result, methods are presented to improve adhesion of CNT films during operation as field emitters, resulting in a 2.5× improvement.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Nonvolatile electrochemical memory at 600°C enabled by composition phase separation

Silicon-based microelectronics are limited to ~150°C and therefore not suitable for the extremely high temperatures in aerospace, energy, and space applications. While wide-band-gap semiconductors can provide high-temperature logic, nonvolatile memory devices at high temperatures have been challenging. In this work, we develop a nonvolatile electrochemical memory cell that stores and retains analog and digital information at temperatures as high as 600°C. Through correlative scanning transmission electron microscopy, we show that this high-temperature information retention is a result of composition phase separation between the oxidized and reduced forms of amorphous tantalum oxide. This result demonstrates a memory concept that is resilient at extreme temperatures and reveals phase separation as the principal mechanism that enables nonvolatile information storage in these electrochemical memory cells.

42 ENGINEERING↗
DOE OSTI2018

Toward an Understanding of Surface Layer Formation, Growth, and Transformation at the Glass–Fluid Interface

Silicate glass is a metastable and durable solid that has application to a number of energy and environmental challenges (e.g., microelectronics, fiber optics, and nuclear waste storage). If allowed to react with water over time silicate glass develops an altered layer at the solid-fluid interface. In this study, we used borosilicate glass (LAWB45) as model material to develop a robust understanding of altered layer formation (i.e., amorphous hydrated surface layer and crystalline reaction products). Experiments were conducted at high surface area-to-volume ratio (~200,000 m-1) and 90 °C in the pressurized unsaturated flow (PUF) apparatus for 1.5-years to facilitate the formation of thick altered layers and allow for the effluent solution chemistry to be monitored continuously. A variety of microscopy techniques were used to characterized reacted grains and suggest the average altered layer thickness is 13.2 ± 8.3 μm with the hydrated and clay layer representing 74.8% and 25.2% of the total altered layer, respectively. This estimate is within the experimental error of the value estimated from the B release rate data (~10 ±1 μm/yr) over the 1.5-year duration. PeakForce® quantitative nanomechanical mapping results suggest the hydrated layer has a modulus that ranges between ~20 to 40 GPa, which is in the range of porous silica that contains from ~20 to ~50% porosity, yet significantly lower than dense silica (~70 to 80 GPa). Scanning transmission electron microscopy (STEM) images confirm the presence of pores and an analysis of a higher resolution image of a region provides a qualitative estimate of ≥ 22% porosity in this layer with variations in the hydrated layer in void volume with increasing distance from the unaltered glass. Chemical composition analyses, based on a combination of time-of-flight secondary-ion mass spectrometry (ToF-SIMS) and scanning electron microscopy with X-ray energy dispersive spectroscopy (EDS) and STEM-EDS, clearly show that the altered layer is mainly composed of Al, H, Si, and O with the clay layer being enriched in Li, Zn, Fe, and Mg. The amorphous hydrated layer is enriched in Ca, H, and Zr with a minor amount of K. Furthermore, ToF-SIMS results also suggest the B profile is anti-correlated with the H profile in the hydrated layer. Our selected-area electron diffraction results suggest the structure of the hydrated layer closely resembles opal-AG (amorphous gel-like) with an average crystallite size of ~0.7 nm which is smaller than the critical nucleus for silica nanoparticles (i.e., 1.4 to 3 nm). These results suggest the hydrated layer is more consistent with a polymeric gel rather than a colloidal gel and is comprised of molecular units (<1 nm in size) that result from the difficult to hydrolyze bonds, such as Si—O—Zr units, during the glass corrosion process. The size of individual particles or molecular units is a function of formation conditions (e.g., pH, ionic strength, nano-confinement, solute composition) in the hydrated layer.

36 MATERIALS SCIENCE↗
DOE OSTI2022

A remarkable CHF of 345W/cm 2 is achieved in a wicked-microchannel using HFE-7100

Boiling heat transfer of dielectric fluids is a promising cooling technique for thermal management of microelectronic systems. However, the critical heat flux achievable is generally low, because of the poor thermophysical properties of these fluids. Here, to address this dilemma, we propose a new cooling concept to substantially enhance global liquid supply during phase-change process using enhanced capillary-driven force. Additionally, dedicated vapor pathways are designed among a bank of micro-pillars to facilitate vapor removal. In this work, new wicks comprised of silicon micro-pinfin arrays are explored to significantly enhance the flow boiling heat transfer performance. To examine the functionalities of this wick, experiments on HFE-7100 were carried out with mass velocities varying from 247 to 3,465 kg/m 2 s. To explore the enhancement mechanisms and to analyze the capillary-assisted flow boiling process, visualization studies were conducted. The results indicate that sustainable evaporation induced by wick microstructures and efficient liquid supply are the enhancement mechanisms compared to parallel microchannels with solid walls. It is found that the overall heat transfer coefficient is substantially increased up to 75%. Remarkably, a high critical heat flux (CHF) of approximately 345 W/cm 2 is recorded at G = 3,465 kg/m 2 s at coolant inlet temperature of ~20 °C. Equally importantly, this noticeable enhancement of CHF value is associated with drastically decreased pressure drops compared to microchannels decorated with μ-pinfin fences.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Personal power using metal-supported solid oxide fuel cells operated in a camping stove flame

A complete stand-alone product prototype providing combined cooking and power is fabricated by retrofitting a commercial camping stove with a stack of metal-supported solid oxide fuel cells (MS-SOFCs) delivering power to microelectronic LED driver and voltage boost circuits. The 5-cell stack produces 2.7 W (156 mW cm -2 ) while cooking on the stove, and is demonstrated to produce LED lighting and mobile phone charging while operating outdoors. Cooking efficiency is minimally impacted by the presence of the MS-SOFCs. As a result, it is found that vertical orientation of the cells is critical to maintain separation of fuel and air when a pot is placed on the stove.

25 ENERGY STORAGE↗
DOE OSTI2014

Interaction of Ce{sub 1−x}Er{sub x}O{sub 2−y} nanoparticles with SiO{sub 2}-effect of temperature and atmosphere

Morphology, microstructure and phase evolution of homogeneous, nanocrystalline Ce{sub 1−x}Er{sub x}O{sub 2−x/2} mixed oxide (x=0.3 and 0.5), prepared by microemulsion method, supported on amorphous SiO{sub 2} was studied in oxidizing and reducing atmosphere by XRD, TEM, SEM-EDS and N{sub 2} adsorption. The system is structurally and chemically stable in the oxidizing atmosphere up to 1000 °C, exhibiting only a small increase of the mean crystallite size of the oxide to ∼4 nm. At 1100 °C formation of Er silicate with unusual structure isomorphic with y-Y{sub 2}Si{sub 2}O{sub 7} (yttrialite), stabilized by Ce{sup 4+} ions was observed. In the reducing atmosphere the Ce{sub 1−x}Er{sub x}O{sub 2−x/2} reacted with SiO{sub 2} already at 900 °C, due to high affinity of the reduced Ce{sup 3+} to form a silicate phase. At higher temperature the silicate crystallized into the tetragonal, low temperature A-(Ce{sub 1−x}Er{sub x}){sub 2}Si{sub 2}O{sub 7} polymorph. Such systems, containing nanocrystalline silicate particles with Er{sup 3+} ions placed in well defined sites embedded in silica matrix, may be interesting as highly efficient active components of optical waveguides amplifiers integrated with Si microelectronics. The nanocrystalline Ce–Er–O/SiO{sub 2} system prepared by the impregnation of the silica with the aqueous solution of nitrates appeared to be chemically inhomogeneous and less stable in both oxidising and reducing atmosphere. - Graphical abstract: Structure evolution of Ce{sub 0.5}Er{sub 0.5}O{sub 1.75} in air and in H{sub 2}. Display Omitted - Highlights: • Homogeneous 3 nm Ce{sub 1−x}Er{sub x}O{sub 2−y} particles were prepared and uniformly dispersed on SiO{sub 2}. • Er diffusion to SiO{sub 2} determines the stability of the mixed oxide in air to ∼1000 °C. • Spreading of Ce{sub 1−x}Er{sub x}O{sub 2−y} onto SiO{sub 2} occurs in hydrogen at 900 °C. • Nanocrystalline A-(Ce,Er){sub 2}Si{sub 2}O{sub 7} silicate forms in H{sub 2} at 1100 °C.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

In-situ synchrotron X-ray study on microstructure and stress evolutions of electroplated copper upon self-annealing

Background: The self-annealing behavior of electroplated copper (Cu) at room temperature is gaining attention in the microelectronics industry due to its significant impact on reliability issues such as substrate warpage and electrical resistivity. Methods: In this study, in-situ analysis of the microstructure transition and stress relaxation of the electroplated copper upon self-annealing was conducted via synchrotron white X-ray nanodiffraction (beamline 21A, Taiwan Photon Source) and grazing-incidence X-ray diffraction (beamline 17B1, Taiwan Light Source). Significant Findings: Remarkable relaxations of deviatoric stress and absolute strain component along the [002] direction were closely related to the Cu grain growth and crystallographic reorientation at the early stage of selfannealing, and a complete stress/strain relaxation can be achieved with the cessation of microstructure transition. In conclusion, the in-situ synchrotron X-ray studies provided an insight into Cu self-annealing mechanism, offering valuable information for improving Cu interconnect reliability.

Cu Self-annealing↗
DOE OSTI2015

Investigation of microstructure, micro-mechanical and optical properties of HfTiO{sub 4} thin films prepared by magnetron co-sputtering

Highlights: • HfTiO{sub 4} thin films were deposited by magnetron co-sputtering. • As-prepared and annealed at 800 °C thin films were nanocrystalline. • Optical properties and hardness were investigated in relation to thin films structure. • Hardness was 3-times higher in the case of as-deposited thin films. • HfTiO{sub 4} thin films are suitable for use as optical coatings with protective properties. - Abstract: Titania (TiO{sub 2}) and hafnium oxide (HfO{sub 2}) thin films are in the focus of interest to the microelectronics community from a dozen years. Because of their outstanding properties like, among the others, high stability, high refractive index, high electric permittivity, they found applications in many optical and electronics domains. In this work discussion on the hardness, microstructure and optical properties of as-deposited and annealed HfTiO{sub 4} thin films has been presented. Deposited films were prepared using magnetron co-sputtering method. Performed investigations revealed that as-deposited coatings were nanocrystalline with HfTiO{sub 4} structure. Deposited films were built from crystallites of ca. 4–12 nm in size and after additional annealing an increase in crystallites size up to 16 nm was observed. Micro-mechanical properties, i.e., hardness and elastic modulus were determined using conventional load-controlled nanoindentation testing. the annealed films had 3-times lower hardness as-compared to as-deposited ones (∼9 GPa). Based on optical investigations real and imaginary components of refractive index were calculated, both for as-deposited and annealed thin films. The real refractive index component increased after annealing from 2.03 to 2.16, while extinction coefficient increased by an order from 10{sup −4} to 10{sup −3}. Structure modification was analyzed together with optical energy band-gap, Urbach energy and using Wemple–DiDomenico model.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Three-Dimensional Microbatteries beyond Lithium Ion

Ubiquitous implementation of microelectronics in microelectromechanical systems requires stable power supplies and necessitates development of on-chip miniature power sources, such as microbatteries. However, conventional thin-film batteries exhibit limited surface area and sluggish diffusion kinetics with insufficient energy and power density. In contrast, three-dimensional (3D) beyond-lithium (sodium, zinc, aluminum, etc.) battery architectures can significantly enhance the areal energy and power and meanwhile maintain the low-cost mass production. Despite this, the future of beyond-lithium systems is being questioned as they each present shortcomings. In this Comment, we discuss scientific advancements in reaction kinetics control, electrochemical stability improvements, and reaction mechanism understandings in 3D beyond-lithium battery systems, and finally, call for intensive research effort to address the challenges and develop strategies that can pave the way toward their commercialization.

25 ENERGY STORAGE↗
DOE OSTI2022

Persistent hot carrier diffusion in boron arsenide single crystals imaged by ultrafast electron microscopy

Cubic boron arsenide (BAs) is promising for microelectronics thermal management because of its high thermal conductivity. Recently, its potential as an optoelectronic material is also being explored. However, it remains challenging to measure its photocarrier transport properties because of small sizes of available high-quality crystals. Here, we use scanning ultrafast electron microscopy (SUEM) to directly visualize the diffusion of photocarriers in BAs single crystals. Surprisingly, we observed ambipolar diffusion at low optical fluence with persistent hot carrier dynamics for above 200 ps, which can likely be attributed to the large frequency gap between acoustic and optical phonons, the same feature that is responsible for the high thermal conductivity. At higher optical fluence, we observed spontaneous electron-hole separation. Our results show BAs is an attractive optoelectronic material combining high thermal conductivity and excellent photocarrier transport properties. Finally, our study also demonstrates the capability of SUEM to probe photocarrier transport in emerging materials.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Are quantum materials economically and environmentally sustainable?

Quantum materials have revolutionized energy, information, and healthcare technologies, yet their development has largely prioritized performance over economic and environmental impacts—key factors for industrial adoption. Using topological materials as a case study, we present a data-driven framework that evaluates over 16,000 materials based on cost, supply chain resilience, energy demand, toxicity, and environmental footprint. By integrating the recently proposed quantum weight – a metric quantifying quantum behavior – we reveal a striking trend: materials with stronger quantum effects often exhibit higher environmental impact, posing challenges for scalability and industrial adoption. To address this, we identify a small set of materials that achieve a balance between quantum functionality and sustainability. Furthermore, our approach enables high-throughput, AI-driven materials discovery that incorporates economic and environmental influences from the outset, guiding the development of quantum materials for next-generation microelectronics and energy harvesting technologies.

AI↗
DOE OSTI2015

Challenges of nickel silicidation in CMOS technologies

In our paper, we review some of the key challenges associated with the Ni silicidation process in the most recent CMOS technologies. The introduction of new materials (e.g.SiGe), and of non-planar architectures bring some important changes that require fundamental investigation from a material engineering perspective. Following a discussion of the device architecture and silicide evolution through the last CMOS generations, we focus our study on a very peculiar defect, termed NiSi-Fangs. We describe a mechanism for the defect formation, and present a detailed material analysis that supports this mechanism. We highlight some of the possible metal enrichment processes of the nickel monosilicide such as oxidation or various RIE (Reactive Ion Etching) plasma process, leading to a metal source available for defect formation. Furthermore, we investigate the NiSi formation and re-formation silicidation differences between Si and SiGe materials, and between (1 0 0) and (1 1 1) orientations. Finally, we show that the thermal budgets post silicidation can lead to the formation of NiSi-Fangs if the structure and the processes are not optimized. Beyond the understanding of the defect and the discussion on the engineering solutions used to prevent its formation, the interest of this investigation also lies in the fundamental learning within the Ni–Pt–Si–Ge system and some additional perspective on Ni-based contacts to advanced microelectronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Epitaxial aluminum layer on antimonide heterostructures for exploring Josephson junction effects

In this study, we present results of our recent work of epitaxially-grown aluminum (epi-Al) on antimonide heterostructures, where the epi-Al thin film is grown at either room temperature or below zero °C. A sharp superconducting transition at T ∼ 1.3 K is observed in these epi-Al films. We further show that supercurrent states are realized in Josephson junctions fabricated in the epi-Al/antimonide heterostructures with mobility μ ∼ 1.0 × 10 6 cm 2 /Vs. These results clearly demonstrate we have achieved growing high-quality epi-Al/antimonide heterostructures, a promising platform for the exploration of Josephson junction effects for quantum information science and microelectronics applications.

Antimonide heterostructures↗