DOE OSTI · 3005155
Epitaxial aluminum layer on antimonide heterostructures for exploring Josephson junction effects
Abstract
In this study, we present results of our recent work of epitaxially-grown aluminum (epi-Al) on antimonide heterostructures, where the epi-Al thin film is grown at either room temperature or below zero °C. A sharp superconducting transition at T ∼ 1.3 K is observed in these epi-Al films. We further show that supercurrent states are realized in Josephson junctions fabricated in the epi-Al/antimonide heterostructures with mobility μ ∼ 1.0 × 10 6 cm 2 /Vs. These results clearly demonstrate we have achieved growing high-quality epi-Al/antimonide heterostructures, a promising platform for the exploration of Josephson junction effects for quantum information science and microelectronics applications.
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Pan, W. [Sandia National Laboratories (SNL-CA), Livermore, CA (United States)], Sapkota, K.R. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)], Lu, P. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)], Muhowski, A. J. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)], Martinez, W. M. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)], Sovinec, C. L.H. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)], Reyna, R. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)], Mendez, J. P. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)], Mamaluy, D. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)], Hawkins, S. D. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)], Klem, J. F. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)], Smith, L. S.L. [Sandia National Laboratories (SNL-CA), Livermore, CA (United States)], Temple, D. A. [Norfolk State University, VA (United States)], Enderson, Z. [Oak Ridge Institute for Science and Education Postdoctoral Fellowship, TN (United States); Georgia Institute of Technology, Atlanta, GA (United States)], Jiang, Z. [Georgia Institute of Technology, Atlanta, GA (United States)], Rossi, E. [College of William and Mary, Williamsburg, VA (United States)]. 2025-04-17. Epitaxial aluminum layer on antimonide heterostructures for exploring Josephson junction effects. https://doi.org/10.1016/j.mseb.2025.118285
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