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At least 253 records · Page 14

Switching Oxide Traps

We consider radiation-induced charge trapping in SiO2 dielectric layers, primarily from the point of view of CMOS devices. However, SiO2 insulators are used in many other ways, and the same defects occur in other contexts. The key studies, which determined the nature of the oxide charge traps, were done primarily on gate oxides in CMOS devices, because that was the main radiation problem in CMOS at one time. There are two major reviews of radiation-induced oxide charge trapping already in the literature, which discuss the subject in far greater detail than is possible here. The first of these was by McLean et al. in 1989, and the second, ten years later, was intended as an update, because of additional, new work that had been reported. Basically, the picture that has emerged is that ionizing radiation creates electron-hole pairs in the oxide, and the electrons have much higher mobility than the holes. Therefore, the electrons are swept out of the oxide very rapidly by any field that is present, leaving behind any holes that escape the initial recombination process. These holes then undergo a polaron hopping transport toward the Si/SiO2 interface (under positive bias). Near the interface, some fraction of them fall into deep, relatively stable, long-lived hole traps. The nature and annealing behavior of these hole traps is the main focus of this paper.

Oldham, Timothy R.↗

Ambipolar diffusion in the middle atmosphere

In the middle atmosphere above 60 km, the electron concentration increases with altitude, reaching values of 10 to the 10th per cu m in the daytime ionospheric E region near 100 km. The electrons are more mobile than the ions and diffuse more rapidly through the neutral atmosphere. The electron diffusion polarizes the medium, causing an electric field to develop that acts to retard the electron diffusion and enhance the conduction current of ions. A global zonally averaged numerical model of atmosheric electricity from the ground to 100 km is used to examine the effect of ambipolar diffusion and the earth's geomagnetic field on the currents and fields in the middle atmosphere. The results show that above about 65 km, ambipolar diffusion generates local electric fields and conduction currents that balance electron diffusion currents. The electric fields and conduction currents are a few orders of magnitude larger than the vertical fields and currents calculated from the downward mapping of the ionospheric potential without taking electron diffusion into account. Ambipolar diffusion does not alter the total current flowing in the global circuit. It is a local effect where enhanced conduction currens flow to balance the electron diffusion current.

Tzur, I.↗

Mobility in single crystal Bi2Se3.

Galvanomagnetic effects are measured in p-type Bi2Se3 in magnetic fields to 8 tesla. Both Hall and conductivity mobilities are determined between 4.2 and 300 K. Carrier compensation, as well as nearly equal electron and hole mobilities are found in samples with approximately 10 to the 25th power per cu m 3 total carrier concentration.

Woollam, j. A.↗

Surface electrons in inverted layers of p-HgCdTe

Anodic oxide passivation of p-type HgCdTe generates an inversion layer. Extremely high Hall mobility data for electrons in this layer indicated the presence of a two-dimensional electron gas. This is verified by use of the Shubnikov-de Haas effect from 1.45 to 4.15 K. Data are extracted utilizing a numerical second derivative of dc measurement. Three sub-bands are detected. Their relative occupancies are in excellent agreement with theory and with experimental results obtained on anodic oxide as accumulation layers of n-type HgCdTe. The effective mass derived is comparable to what was expected.

Schacham, Samuel E.↗

Alkali mobility in shocked basalt

An electron microprobe was used to study plagioclase in unshocked and experimentally shocked samples of Vacaville basalt, and unstable microprobe analyses have been reported for shocked chondritic meteorites. It is concluded that there is no selective sodium loss due to the shock process. Sodium mobilization under the electron beam reflects increasingly severe lattice damage for increasing shock pressures

Jeanloz, R.↗

Mobile Collection and Automated Interpretation of EEG Data

A system that would comprise mobile and stationary electronic hardware and software subsystems has been proposed for collection and automated interpretation of electroencephalographic (EEG) data from subjects in everyday activities in a variety of environments. By enabling collection of EEG data from mobile subjects engaged in ordinary activities (in contradistinction to collection from immobilized subjects in clinical settings), the system would expand the range of options and capabilities for performing diagnoses. Each subject would be equipped with one of the mobile subsystems, which would include a helmet that would hold floating electrodes (see figure) in those positions on the patient s head that are required in classical EEG data-collection techniques. A bundle of wires would couple the EEG signals from the electrodes to a multi-channel transmitter also located in the helmet. Electronic circuitry in the helmet transmitter would digitize the EEG signals and transmit the resulting data via a multidirectional RF patch antenna to a remote location. At the remote location, the subject s EEG data would be processed and stored in a database that would be auto-administered by a newly designed relational database management system (RDBMS). In this RDBMS, in nearly real time, the newly stored data would be subjected to automated interpretation that would involve comparison with other EEG data and concomitant peer-reviewed diagnoses stored in international brain data bases administered by other similar RDBMSs.

Mintz, Frederick↗

Holographic particle detection

The feasibility was studied of developing a novel particle track detector based on the detection of 1p-1s emission radiation from electron bubbles in liquid helium. The principles, design, construction, and initial testing of the detection system have been described in previous reports. The main obstacle encountered was the construction of the liquid-helium tight infrared windows. Despite numerous efforts in testing and redesigning the windows, the problem of window leakage at low temperature persisted. Due to limited time and resources, attention was switched to investigating the possibility of using room-temperature liquid as the detection medium. A possible mechanism was the detection of de-excitation radiation emitted from localized electrons in common liquids where electrons exhibit low mobilities, as suggested in the previous report. The purity of the liquid is critical in this method as the dissolved impurities (such as oxygen), even in trace amounts, will act as scavengers of electrons. Another mechanism is discussed whereby the formation of the superoxide ions by electron scavenging behavior of dissolved oxygen is exploited to detect the track of ionizing particles. An experiment to measure the ionization current produced in a liquid by a pulsed X-ray beam in order to study propertiies of the ions is also reported.

Bowen, Theodore↗

Growth and properties of Hg-based quantum well structures and superlattices

An overview of the properties of HgTe-CdTe quantum well structures and superlattices (SL) is presented. These new quantum structures are candidates for use as new long wavelength infrared (LWIR) and very long wavelength infrared (VLWIR) detectors, as well as for other optoelectronic applications. Much has been learned within the past two years about the physics of such structures. The valence band offset has been determined to be approx. 350 meV, independent of temperature. The occurrence of electron and hole mobilities in excess of 10(exp 5)cm(exp 2)/V center dot s is now understood on the basis of SL band structure calculations. The in-plane and out-of-plane electron and hole effective masses have been measured and interpreted theoretically for HgTe-CdTe superlattices. Controlled substitutional doping of superlattices has recently been achieved at North Carolina State University (NCSU), and modulation-doped SLs have now been successfully grown and studied. Most recently, a dramatic lowering of the growth temperature of Hg-based quantum well structure and SLs (to approx. 100 C) has been achieved by means of photoassisted molecular beam epitaxy (MBE) at NCSU. A number of new devices have been fabricated from these doped multilayers.

Schetzina, J. F.↗

Measurement of minority-carrier drift mobility in solar cells using a modulated electron beam

A determination of diffusivity on solar cells is here reported which utilizes a one dimensional treatment of diffusion under sinusoidal excitation. An intensity-modulated beam of a scanning electron microscope was used as a source of excitation. The beam was injected into the rear of the cell, and the modulated component of the induced terminal current was recovered phase sensitively. A Faraday cup to measure the modulated component of beam current was mounted next to the sample, and connected to the same electronics. A step up transformer and preamplifier were mounted on the sample holder. Beam currents on the order of 400-pA were used in order to minimize effects of high injection. The beam voltage was 34-kV, and the cell bias was kept at 0-V.

Othmer, S.↗

Computer Analysis of Electromagnetic Field Exposure Hazard for Space Station Astronauts during Extravehicular Activity

In order to estimate the RF radiation hazards to astronauts and electronics equipment due to various Space Station transmitters, the electric fields around the various Space Station antennas are computed using the rigorous Computational Electromagnetics (CEM) techniques. The Method of Moments (MoM) was applied to the UHF and S-band low gain antennas. The Aperture Integration (AI) method and the Geometrical Theory of Diffraction (GTD) method were used to compute the electric field intensities for the S- and Ku-band high gain antennas. As a result of this study, The regions in which the electric fields exceed the specified exposure levels for the Extravehicular Mobility Unit (EMU) electronics equipment and Extravehicular Activity (EVA) astronaut are identified for various Space Station transmitters.

Hwu, Shian U.↗

Low Power Microrobotics Utilizing Biologically Inspired Energy Generation

The Low Power Microrobotics (LPM) project is a NASA NIAC-funded multi-disciplinary research effort involving the research and advancement of low power electronics, low power mobility and their integration with state of the art microbial fuel cell for power generation. The goal of this project was to advance the capabilities of each of these systems with a 10-year future target of a near one kilogram space exploration vehicle that contains each of these systems. In order to accomplish this task, each system was investigated independently in order to establish the power requirements/limitations while considering how each system affects the other systems. This was performed through numerous trade studies and experimental work, primarily focused around the power capacity of the microbial fuel cell base-lined for this project and how its strengths and limitations affected the design of the remaining onboard systems. Finally an end-to-end system test utilized a microbial fuel cell to charge a super capacitor through an energy harvesting circuit, which was discharged to activate a robotic locomotion system.

Microrobotics↗

Thickness dependences of solar cell performance

The significance of including factors such as the base resistivity loss for solar cells thicker than 100 microns and emitter and BSF layer recombination for thin cells in predicting the fill factor and efficiency of solar cells is demonstrated analytically. A model for a solar cell is devised with the inclusion of the dopant impurity concentration profile, variation of the electron and hole mobility with dopant concentration, the concentration and thermal capture and emission rates of the recombination center, device temperature, the AM1 spectra and the Si absorption coefficient. Device equations were solved by means of the transmission line technique. The analytical results were compared with those of low-level theory for cell performance. Significant differences in predictions of the fill factor resulted, and inaccuracies in the low-level approximations are discussed.

Sah, C. T.↗

Advanced methods for preparation and characterization of infrared detector materials

Crystals were prepared by the Bridgman-Stockbarger method with a wide range of crystal growth rates and temperature gradients adequate to prevent constitutional supercooling under diffusion-limited, steady-state, growth conditions. The longitudinal compositional gradients for different growth conditions and alloy compositions were calculated and compared with experimental data to develop a quantitative model of solute redistribution during the crystal growth of the alloys. Measurements were performed to ascertain the effect of growth conditions on radial compositional gradients. The pseudobinary HgTe-CdTe constitutional phase diagram was determined by precision differential-thermal-analysis measurements and used to calculate the segregation coefficient of Cd as a function of x and interface temperature. Experiments were conducted to determine the ternary phase equilibria in selected regions of the Hg-Cd-Te constitutional phase diagram. Electron and hole mobilities as functions of temperature were analyzed to establish charge-carrier scattering probabilities. Computer algorithms specific to Hg(1-x)CdxTe were developed for calculations of the charge-carrier concentration, charge-carrier mobilities, Hall coefficient, and Dermi Fermi energy as functions of x, temperature, ionized donor and acceptor concentrations, and neutral defect concentrations.

Broerman, J. G.↗

Surface and allied studies in silicon solar cells

Two main results are presented. The first deals with a simple method that determines the minority-carrier lifetime and the effective surface recombination velocity of the quasi-neutral base of silicon solar cells. The method requires the observation of only a single transient, and is amenable to automation for in-process monitoring in manufacturing. This method, which is called short-circuit current decay, avoids distortion in the observed transient and consequent inacccuracies that arise from the presence of mobile holes and electrons stored in the p/n junction spacecharge region at the initial instant of the transient. The second main result consists in a formulation of the relevant boundary-value problems that resembles that used in linear two-port network theory. This formulation enables comparisons to be made among various contending methods for measuring material parameters of p/n junction devices, and enables the option of putting the description in the time domain of the transient studies in the form of an infinite series, although closed-form solutions are also possible.

Lindholm, F. A.↗

Effects of substrate misorientation and background impurities on electron transport in molecular-beam-epitaxial grown GaAs/AlGaAs modulation-doped quantum-well structures

The effects of substrate misorientation off the (001) plane and of background impurities on electron transport in MBE-grown GaAs/AlGaAs modulation-doped superlattice-buffered quantum-well structures were investigated. Low-field transport data were obtained on GaAs/AlGaAs structures grown on substrates oriented 0, 2, 4, and 6.5 deg off the (001) plane towards either (111)A or (111)B. It is shown that the low-field two-dimensional electron gas (2DEG) mobility is a function of the angle and direction of the substrate orientation, and that the 2DEG mobility is a function of the direction of the applied electric field in the GaAs quantum well. The anisotropy in the 2DEG mobility is also a function of the tilt angle and tilt azimuth direction of the substrate from the (001) plane. In addition, it is shown that the amount of interface scattering from the inverted interface is a sensitive function of the amount of background impurities in the MBE machine.

Radulescu, D. C.↗

Temporal study of wake formation behind a conducting body

The temporal evolution of the wake of a conducting body is studied experimentally in a pulsed plasma device. Three-dimensional measurements of the plasma potential, density, particle energy distribution, and ion currents are measured throughout the near- and mid-wake regions during the wake formation. It is found that the potential behind the conducting body is initially negative. This negative potential is caused by the higher mobility of the electrons, allowing them to flow into the ion free wake region. The negative potential in the wake region induces an electric field that pulls ions into the region behind the conducting body. However, the dominant factor in determining the length of the near wake is the thermal energy spread of the ions. At later times, as the sheath forms around the conducting body, ions are deflected by the potential gradient in the sheath region. This deflection, in addition to the thermal energy spread of the ions, determines the length of the near wake.

Meassick, S.↗

The Low Pressure Gas Effects On The Potency Of An Electron Beam On Ceramic Fabric Materials For Space Welding

This investigation was undertaken to evaluate if molten metal or electron beam impingement could damage or burn through the fabric of the astronauts Extravehicular Mobility Unit (EMU) during electron beam welding exercises performed in space. An 8 kilovolt electron beam with a current in the neighborhood of 100 milliamps from the Ukrainian space welding "Universal Hand Tool" burned holes in Nextel AF-62 ceramic cloth designed to withstand temperatures up to 1427 C. The burnthrough time was on the order of 8 seconds at standoff distances between UHT and cloth ranging from 6 to 24 inches. At both closer (2") and farther (48") standoff distances the potency of the beam against the cloth declined and the burnthrough time went up significantly. Prior to the test it had been expected that the beam would lay down a static charge on the cloth and be deflected without damaging the cloth. The burnthrough is thought to be an effect of partial transmission of beam power by a stream of positive ions generated by the high voltage electron beam from contaminant gas in the "vacuum" chamber. A rough quantitative theoretical computation appears to substantiate this possibility.

Nunes, Arthur C., Jr.↗

An Assessment of Molten Metal Detachment Hazards During Electron Beam Welding in Space

The safety issue has been raised with regards to potential molten metal detachments from the weld pool and cold filler wire during electron beam welding in space. This investigation was undertaken to evaluate if molten metal could detach and come in contact with astronauts and burn through the fabric of the astronauts' Extravehicular Mobility Unit (EMU) during electron beam welding in space. Molten metal detachments from either the weld/cut substrate or weld wire could present harm to a astronaut if the detachment was to burn through the fabric of the EMU. Theoretical models were developed to predict the possibility and size of the molten metal detachment hazards during the electron beam welding exercises at Low Earth Orbit (LEO). The primary molten metal detachment concerns were those cases of molten metal separation from the metal surface due to metal cutting, weld pool splashing, entrainment and release of molten metal due to filler wire snap-out from the weld puddle, and molten metal accumulation and release from the end of the weld wire. Some possible ways of obtaining molten metal drop detachments would include an impulse force, or bump, to the weld sample, cut surface, or filler wire. Theoretical models were developed for these detachment concerns from principles of impact and kinetic energies, surface tension, drop geometry, surface energies, and particle dynamics. The surface tension represents the force opposing the liquid metal drop from detaching whereas the weight of the liquid metal droplet represents a force that is tending to detach the molten metal drop. Theoretical calculations have indicated that only a small amount of energy is required to detach a liquid metal drop; however, much of the energy of an impact is absorbed in the sample or weld plate before it reaches the metal drop on the cut edge or surface. The tendency for detachment is directly proportional to the weld pool radius and metal density and inversely proportional to the surface tension of the liquid metal. For a detachment the initial kinetic energy of the weld pool with respect to the plate has to exceed the energy to form the extra surface required for the detachment of the pool. The difficulty is in transferring the energy from the point of impact through the plate and sample to the cut edge. It is likely that not all of the kinetic energy is available for detaching the pool; some may be sequestered in weld pool oscillations. The coefficient of restitution for the collision will be lower than one if irreversible deformation, for example plastic flow deformation, takes place during the collision. Thus determining the amount of energy from an impact that actually reaches the molten metal droplet is critical. Various molten metal detachment scenarios were tested experimentally in an enclosed vacuum chamber using the Ukrainian Universal Hand Tool, an electron beam welder designed for space welding. The experimental testing was performed in a 4 ft. X 4 ft. vacuum chamber at Marshall Space Flight Center, evacuated to vacuum levels of at least 50 microTorr, and also some welding garment material was utilized to observe the effect of the molten metal detachments on the material. A "carillon" apparatus consisting of four pendulum hammer strikers, each weighing approximately 3.65 lbs, raised to predetermined specific heights was used to apply an impact force to the weld sample/plate during electron beam welding and cutting exercises. The strikers were released by switching on an electric motor to rotate a pin holding wires retaining the strikers at desired heights. The specimens were suspended so as to be free to respond to the blows with a sudden velocity increment. The specimens were mounted on a hinged plate for minimizing effective mass with the option to fasten it down so as to raise its effective mass closer to that anticipated for an actual space welding scenario. Measurements were made of the impact energy and the horizontal fling distances of the detached metal drops. It was not particularly easy to generate the detachments for this experiment. This document presents the details of the theoretical modeling effort and a summary of the experimental effort to measure molten metal drop detachments from terrestrial electron beam welding in the enclosed vacuum chamber. The results of the experimental effort have shown that molten metal detachments can occur from the sample/weld plate only if a sufficiently large impact force is applied to the weld plate. A "weld pool detachment parameter" was determined to indicate whether detachment would occur. Detachment can be either full or partial (dripping), Partial detachment means that the weld pool detached from one side of the liquid-solid boundary so as to leave a hole at the puddle site but remained attached over part of the liquid-solid boundary and dripped down the plate with no fully detached material detected. Full detachment, however, does not necessarily mean that the whole pool fully detached; in some cases only a smaller portion of the pool detached, the remainder dripping down the plate. The weld pool detachment parameter according to theory and according to the empirical data allows a determination of whether full detachments might occur. Theoretical calculations indicated titanium alloy would be the most difficult from which to detach molten metal droplets followed by stainless steel and then by aluminum. The experimental results were for the most part consistent with the theoretical analysis and predictions. The above theory is applicable to other situations as desired for assessing the potential for molten metal detachments.

Fragomeni, James M.↗