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At least 235 records · Page 13
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Epitaxy of Beta-Ga2O3 on Highly-Offcut (Greater than 10 Degrees) Substrates

Beta-Ga2O3 has emerged as a leading candidate for next-generation power electronics, radio frequency (RF) switches, and extreme environment electronics due to a wide band gap (4.6 - 4.9 eV), high dopability (approximately 40 meV activation energy for an isolated silicon donor), and melt growth characteristics resulting in commercially available 4-inch substrates and commercial demonstrations of 6-inch substrates by multiple techniques. The (100) surface of Ga2O3 is highly desirable from a device and epitaxy standpoint - bulk growth of (100) material is more scalable than (010), the surface is nearly lattice-matched to p-type partner NiO, and Al2O3 incorporates at higher concentrations without phase separation. However, the epitaxial growth rate on (100) surfaces is less than 10% of other faces due to weak bonding and favorable desorption. Recent demonstrations have shown growth rate improvements from 0.4 nm/min to 1.5 nm/min by growing on (100) wafers that are offcut 6 degrees in the -c direction.1 These films show step-flow growth from (-201) step-edges and high electron mobility. Despite these exciting results, offcuts greater than 6 degrees have not been explored due to the waste associated with grinding and polishing large offcuts. In this talk we will discuss the molecular beam epitaxy (MBE) growth and properties of Beta-Ga2O3 grown on (100) substrates offcut in the -c direction up to 13.4 degrees. These large offcuts are enabled by edge-fed film-defined growth (EFG) where the offcut is grown into the surface by pulling the crystal through the EFG die with the seed crystal rotated by the desired offcut angle. We will demonstrate that 13.4 degrees offcut substrates still exhibit a terraced (100) surface, and that a >10x increase (4.8 nm/min) in growth rate is achieved. As previously reported on lower offcuts, we observe 100% reversal of substrate twin domains around the (001) direction at the substrate-epilayer interface. We will discuss electrical properties including record-low (by MBE) unintentional doping densities of < 5E15 cm-3.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Fast Growth of Ga2O3 on Highly Offcut (100)-Oriented Substrates

Beta-Ga2O3 has emerged as a leading candidate for next-generation power electronics, radio frequency (RF) switches, and extreme environment electronics due to a wide band gap (4.6 - 4.9 eV), high dopability (approximately 40 meV activation energy for an isolated silicon donor), and melt growth characteristics resulting in commercially available 4-inch substrates and commercial demonstrations of 6-inch substrates by multiple techniques. The (100) surface of Ga2O3 is highly desirable from a device and epitaxy standpoint - bulk growth of (100) material is more scalable than (010), the surface is nearly lattice-matched to p-type partner NiO, and Al2O3 incorporates at higher concentrations without phase separation. More importantly, the impact ionization coefficients along the [100] direction are low, leading to the highest possible critical fields. This is advantageous compared to the current state of the art, (001), due to reduced surface defects and increased possible breakdown voltage. However, the epitaxial growth rate on (100) surfaces is less than 10% of other faces due to weak bonding and favorable desorption, and on-axis (100) growth easily forms twin domains. Recent demonstrations have shown growth rate improvements from 0.4 nm/min to 1.5 nm/min by growing on (100) wafers that are offcut 6 degrees in the -c direction. These films show step-flow growth from (20-1) step-edges and high electron mobility due to suppressed twins. Despite these exciting results, offcuts greater than 6 degrees have not been explored due to the waste associated with grinding and polishing large offcuts. In this talk we will discuss the molecular beam epitaxy (MBE) growth and properties of Beta-Ga2O3 grown on (100) substrates offcut in the -c direction up to 13.4 degrees. These large offcuts are enabled by edge-fed film-defined growth (EFG) where the offcut is grown into the surface by pulling the crystal through the EFG die with the seed crystal rotated by the desired offcut angle. We will demonstrate that 13.4 degrees offcut substrates still exhibit a terraced (100) surface, and that a >10x increase (>5 nm/min) in growth rate is achieved. As previously reported on lower offcuts, we observe reversal of substrate twin domains around the (001) direction at the substrate-epilayer interface. We will discuss electrical properties including record-low (by MBE) unintentional doping densities of < 5E15 cm-3 and critical breakdown field in Schottky barrier diodes comparable with state-of-the-art (001) Ga2O3 without edge termination.

36 MATERIALS SCIENCE↗
NASA NTRS1977

Solid-state RF switch

Consisting of NAND gates, switch can be expanded to multipole input and can switch at frequencies up to 30MHz. Device uses digital integrated circuits to provide isolation between inputs and between input and output ports.

Hanna, M. F.↗
NASA NTRS1978

Gate-assisted turn-off thyristor

1,000-volt, 200-ampere gate-assisted turn-off thyristor has been developed for power circuits requiring high efficiency, small size, and low weight. Design features include shunted cathode for high dV/dt capability. Cathode in interdigitated with dynamic gate for fast, low-loss switching. Operating frequency exceeds 20 kHz with overall energy dissipation of less that 12 mJ per pulse for typical 20-microsecond half-sine waveform. Device has turn-on time of 2 microseconds and turn-off time as short as 3 microseconds with only 2 amperes of gate drive.

Lowry, L. R.↗
NASA NTRS1979

Switching transients in high-frequency high-power converters using power MOSFET's

The use of MOSFETs in a high-frequency high-power dc-to-dc converter is investigated. Consideration is given to the phenomena associated with the paralleling of MOSFETs and to the effect of stray circuit inductances on the converter circuit performance. Analytical relationships between various time constants during the turning-on and turning-off intervals are derived which provide estimates of plateau and peak levels during these intervals.

Sloane, T. H.↗
NASA NTRS1983

Ozone and water vapor monitoring using a ground-based lidar system

Measurements of atmospheric ozone and water vapor profiles obtained using a differential absorption lidar (DIAL) technique at Haute Provence Observatory are reported. The DIAL technique is based on the comparison of differences in attenuation in backscattered signals at wavelengths centered on strong absorptions or absorption lines of the species in question, and wavelengths corresponding to weaker or no absorption. The system in use is based on three lasers - a Nd:YAG Q-switched laser frequency doubled to emit at 532 nm, and two tunable narrowline dye lasers used to convert this emission into the IR or UV spectral regions. Ozone concentration profiles have been recorded up to a height of 30 km, and reveal large day-to-day variations in number density which were correlated with a decrease in tropopause height. Measurements of water vapor concentrations show a variability of the mixing ratio at heights up to 2.5 km representative of dynamic processes, and a variability above 2.5 km that is within the measurement error. Day-to-day variations in tropospheric mixing ratio were also observed.

Megie, G.↗
NASA NTRS1992

Control of nonlinear systems using terminal sliding modes

The development of an approach to control synthesis for robust robot operations in unstructured environments is discussed. To enhance control performance with full model information, the authors introduce the notion of terminal convergence and develop control laws based on a class of sliding modes, denoted as terminal sliders. They demonstrate that terminal sliders provide robustness to parametric uncertainty without having to resort to high-frequency control switching, as in the case of conventional sliders. It is shown that the proposed method leads to greater guaranteed precision in all control cases discussed.

Venkataraman, S. T.↗
NASA NTRS1994

Sliding mode control method having terminal convergence in finite time

An object of this invention is to provide robust nonlinear controllers for robotic operations in unstructured environments based upon a new class of closed loop sliding control methods, sometimes denoted terminal sliders, where the new class will enforce closed-loop control convergence to equilibrium in finite time. Improved performance results from the elimination of high frequency control switching previously employed for robustness to parametric uncertainties. Improved performance also results from the dependence of terminal slider stability upon the rate of change of uncertainties over the sliding surface rather than the magnitude of the uncertainty itself for robust control. Terminal sliding mode control also yields improved convergence where convergence time is finite and is to be controlled. A further object is to apply terminal sliders to robot manipulator control and benchmark performance with the traditional computed torque control method and provide for design of control parameters.

Venkataraman, Subramanian T.↗
NASA NTRS1993

Power Switching Device

The MOS-Controlled Thyristor is a new type of power switching device for faster and more efficient control and management of power electronics. It enables power electronic switching at frequencies of 50 to 100 thousand times a second with much lower power losses than other semiconductor devices. Advantages include electric power savings and smaller space. The device is used in motor and power controllers, AC & DC motor drives and induction heating. Early development was supported by Lewis Research Center (LEW) and other agencies. General Electric''s power semiconductor operation, the initial NASA contractor, was later purchased by Harris Semiconductor.

Source record↗
NASA NTRS2005

Wide Bandwidth Phase-Locked Loop Circuit

A PLL circuit uses a multiple frequency range PLL in order 10 phase lock input signals having a wide range of frequencies. The PLL includes a VCO capable of operating in multiple different frequency ranges and a divider bank independently configurable to divide the output of the VCO. A frequency detector detects a frequency of the input signal and a frequency selector selects an appropriate frequency range for the PLL. The frequency selector automatically switches the PLL to a different frequency range as needed in response to a change in the input signal frequency. Frequency range hysteresis is implemented to avoid operating he PLL near a frequency range boundary.

Robert David Koudelka↗
NASA NTRS2005

Wide bandwidth phase-locked loop circuit

A PLL circuit uses a multiple frequency range PLL in order to phase lock input signals having a wide range of frequencies. The PLL includes a VCO capable of operating in multiple different frequency ranges and a divider bank independently configurable to divide the output of the VCO. A frequency detector detects a frequency of the input signal and a frequency selector selects an appropriate frequency range for the PLL. The frequency selector automatically switches the PLL to a different frequency range as needed in response to a change in the input signal frequency. Frequency range hysteresis is implemented to avoid operating the PLL near a frequency range boundary.

Koudelka, Robert David↗
NASA NTRS2010

Wavefront Correction for Large, Flexible Antenna Reflector

A wavefront-correction system has been proposed as part of an outer-space radio communication system that would include a large, somewhat flexible main reflector antenna, a smaller subreflector antenna, and a small array feed at the focal plane of these two reflector antennas. Part of the wavefront-correction system would reside in the subreflector, which would be a planar patch-element reflectarray antenna in which the phase shifts of the patch antenna elements would be controlled via microelectromechanical systems (MEMS) radio -frequency (RF) switches. The system would include the following sensing-and-computing subsystems: a) An optical photogrammetric subsystem built around two cameras would estimate geometric distortions of the main reflector; b) A second subsystem would estimate wavefront distortions from amplitudes and phases of signals received by the array feed elements; and c) A third subsystem, built around small probes on the subreflector plane, would estimate wavefront distortions from differences among phases of signals received by the probes. The distortion estimates from the three subsystems would be processed to generate control signals to be fed to the MEMS RF switches to correct for the distortions, thereby enabling collimation and aiming of the received or transmitted radio beam to the required precision.

Imbriale, William A.↗
NASA NTRS2010

Trace Gas Measurements on Mars and Earth Using Optical Parametric Generation

Trace gases and their isotopic ratios in planetary atmospheres offer important but subtle clues as to the origins of a planet's atmosphere, hydrology, geology, and potential for biology. An orbiting laser remote sensing instrument is capable of measuring trace gases on a global scale with unprecedented accuracy, and higher spatial resolution that can be obtained by passive instruments. We have developed an active sensing instrument for the remote measurement of trace gases in planetary atmospheres (including Earth). The technique uses widely tunable, seeded optical parametric generation (OPG) to measure methane, CO2, water vapor, and other trace gases in the near and mid-infrared spectral regions. Methane is a strong greenhouse gas on Earth and it is also a potential biogenic marker on Mars and other planets. Methane in the Earth's atmosphere survives for a shorter time than CO2 but its impact on climate change can be larger than CO2. Methane levels have remained relatively constant over the last decade around 1.78 parts per million (ppm) but recent observations indicate that methane levels may be on the rise. Increasing methane concentrations may trigger a positive feedback loop and a subsequent runaway greenhouse effect, where increasing temperatures result in increasing methane levels. The NRC Decadal Survey recognized the importance of global observations of greenhouse gases and called for simultaneous CH4, CO, and CO2 measurements but also underlined the technological limitations for these observations. For Mars, methane measurements are of great interest because of its potential as a strong biogenic marker. A remote sensing instrument that can measure day and night over all seasons and latitudes can identify and localize sources of biogenic gas plumes produced by subsurface chemistry or biology, and aid in the search for extra-terrestrial life. It can identify the dynamics of methane generation over time and latitude and identify future lander mission sites for more detailed in-situ analysis. In this paper we report on remote sensing measurements of methane using a high peak power, widely tunable optical parametric generator (OPG) operating at 3.3 micron and 1.65 micron. The OPG is pumped by a passively q-switched single frequency laser (3ns, 5KHz, 50uJ) and seeded by a diode laser. The spectral width of both signal and idler of seeded OPG is nearly Fourier transform limited. The output of seeded OPG is single frequency with high spectral purity and is widely tunable. Both 1650 nm and 3300 nm can be generated with a conversion efficiency of more than 30%. We have demonstrated detection of methane at 3274 nm and 1650 nm in a cell and also performed open path atmospheric measurements of methane at the same wavelengths. Finally, we were able to demonstrate simultaneous detection of methane at 3270.4 nm and CO2 at 1578.2 nm. In this paper we will discuss the OPG performance and atmospheric open path measurement results.

Numata, Kenji↗
NASA NTRS2005

Series-Connected Buck Boost Regulators

A series-connected buck boost regulator (SCBBR) is an electronic circuit that bucks a power-supply voltage to a lower regulated value or boosts it to a higher regulated value. The concept of the SCBBR is a generalization of the concept of the SCBR, which was reported in "Series-Connected Boost Regulators" (LEW-15918), NASA Tech Briefs, Vol. 23, No. 7 (July 1997), page 42. Relative to prior DC-voltage-regulator concepts, the SCBBR concept can yield significant reductions in weight and increases in power-conversion efficiency in many applications in which input/output voltage ratios are relatively small and isolation is not required, as solar-array regulation or battery charging with DC-bus regulation. Usually, a DC voltage regulator is designed to include a DC-to-DC converter to reduce its power loss, size, and weight. Advances in components, increases in operating frequencies, and improved circuit topologies have led to continual increases in efficiency and/or decreases in the sizes and weights of DC voltage regulators. The primary source of inefficiency in the DC-to-DC converter portion of a voltage regulator is the conduction loss and, especially at high frequencies, the switching loss. Although improved components and topology can reduce the switching loss, the reduction is limited by the fact that the converter generally switches all the power being regulated. Like the SCBR concept, the SCBBR concept involves a circuit configuration in which only a fraction of the power is switched, so that the switching loss is reduced by an amount that is largely independent of the specific components and circuit topology used. In an SCBBR, the amount of power switched by the DC-to-DC converter is only the amount needed to make up the difference between the input and output bus voltage. The remaining majority of the power passes through the converter without being switched. The weight and power loss of a DC-to-DC converter are determined primarily by the amount of power processed. In the SCBBR, the unswitched majority of the power is passed through with very little power loss, and little if any increase in the sizes of the converter components is needed to enable the components to handle the unswitched power. As a result, the power-conversion efficiency of the regulator can be very high, as shown in the example of Figure 1. A basic SCBBR includes a DC-to-DC converter (see Figure 2). The switches and primary winding of a transformer in the converter is connected across the input bus, while the secondary winding and switches are connected in series with the output bus, so that the output voltage is the sum of the input voltage and the secondary voltage of the converter. In the breadboard SCBBR, the input voltage applied to the primary winding is switched by use of metal oxide/semiconductor field-effect transistors (MOSFETs) in a full bridge circuit; the secondary winding is center-tapped, with two MOSFET switches and diode rectifiers connected in opposed series in each leg. The sets of opposed switches and rectifiers are what enable operation in either a boost or a buck mode. In the boost mode, input voltage and current, and the output voltage and current are all positive; that is, the secondary voltage is added to the input voltage and the net output voltage can be regulated at a value equal or greater than the input voltage. In the buck mode, input voltage is still positive and the current still flows in the same direction in the secondary, but the switches are controlled such that some power flows from the secondary to the primary. The voltage across the secondary and the current into the primary are reversed. The result is that the output voltage is lower than the input voltage, and some power is recirculated from the converter secondary back to the input. Quantitatively, the advantage of an SCBBR is a direct function of the regulation range required. If, for example, a regulation range of 20 percent is required for a 500-W supply, th it suffices to design the DC-to-DC converter in the SCBBR for a power rating of only 100 W. The switching loss and size are much smaller than those of a conventional regulator that must be rated for switching of all 500 W. The reduction in size and the increase in efficiency are not directly proportional to switched-power ratio of 5:1 because the additional switches contribute some conduction loss and the input and output filters must be larger than those typically required for a 100-W converter. Nevertheless, the power loss and the size can be much smaller than those of a 500-W converter.

Birchenough, Arthur G.↗
NASA NTRSDate not supplied

Asymmetric Flow State Switching in the Space Launch System Block 2 Liftoff Environment

An in-depth investigation was conducted at the NASA Langley Research Center 14- by 22-Foot Subsonic Tunnel to evaluate flow state switching in the liftoff flow environment of the Space Launch System Block 2 Crew launch vehicle using force measurements, two-component particle image velocimetry, and tuft flow visualization. Multimodal flow states were observed in the gap flow between the centerbody and solid rocket boosters at a range of incoming flow angles and were characterized for the relative strength of state switches. When flow switches occur, the flow is predominantly bimodal, but trimodal flow states are observed with the launch tower downstream of the vehicle. Tuft visualization indicates three-dimensionality during flow state switching, which initiates at one part of the gap and quickly transitions throughout the length of the booster. Due to the long time scales between switches, statistics such as frequency of flow state switches and converged state probabilities cannot be established without significantly increased acquisition times.

Lee J. Mears↗
NASA NTRSDate not supplied

Asymmetric Flow State Switching on the Space Launch System (SLS) Block 2 Crew Vehicle

An in-depth investigation was conducted at the NASA Langley Research Center 14- by 22-Foot Subsonic Tunnel to evaluate flow state switching in the liftoff flow environment of the Space Launch System Block 2 Crew launch vehicle using side force measurements, two-component particle image velocimetry, and tufts flow visualization. Multimodal flow states were observed in the gap flow between the centerbody and solid rocket boosters at a range of incoming flow angles and were characterized for the relative strength of state switches. When flow switches occur, the flow is predominantly bimodal, but trimodal flow states are observed with the launch tower downstream of the vehicle. Tufts visualization indicates three-dimensionality during flow state switching, which initiates at one part of the gap and quickly transitions throughout the length of the booster. Due to the long time scales between switches, statistics such as frequency of flow state switches and converged state probabilities cannot be established without significantly increased acquisition times.

Lee J. Mears↗
NASA NTRS2011

Early Oscillation Detection Technique for Hybrid DC/DC Converters

Oscillation or instability is a situation that must be avoided for reliable hybrid DC/DC converters. A real-time electronics measurement technique was developed to detect catastrophic oscillations at early stages for hybrid DC/DC converters. It is capable of identifying low-level oscillation and determining the degree of the oscillation at a unique frequency for every individual model of the converters without disturbing their normal operations. This technique is specially developed for space-used hybrid DC/DC converters, but it is also suitable for most of commercial and military switching-mode power supplies. This is a weak-electronic-signal detection technique to detect hybrid DC/DC converter oscillation presented as a specific noise signal at power input pins. It is based on principles of feedback control loop oscillation and RF signal modulations, and is realized by using signal power spectral analysis. On the power spectrum, a channel power amplitude at characteristic frequency (CPcf) and a channel power amplitude at switching frequency (CPsw) are chosen as oscillation level indicators. If the converter is stable, the CPcf is a very small pulse and the CPsw is a larger, clear, single pulse. At early stage of oscillation, the CPcf increases to a certain level and the CPsw shows a small pair of sideband pulses around it. If the converter oscillates, the CPcf reaches to a higher level and the CPsw shows more high-level sideband pulses. A comprehensive stability index (CSI) is adopted as a quantitative measure to accurately assign a degree of stability to a specific DC/DC converter. The CSI is a ratio of normal and abnormal power spectral density, and can be calculated using specified and measured CPcf and CPsw data. The novel and unique feature of this technique is the use of power channel amplitudes at characteristic frequency and switching frequency to evaluate stability and identify oscillations at an early stage without interfering with a DC/DC converter s normal operation. This technique eliminates the probing problem of a gain/phase margin method by connecting the power input to a spectral analyzer. Therefore, it is able to evaluate stability for all kinds of hybrid DC/DC converters with or without remote sense pins, and is suitable for real-time and in-circuit testing. This frequency-domain technique is more sensitive to detect oscillation at early stage than the time-domain method using an oscilloscope.

Wang, Bright L.↗
NASA NTRS1984

Maser and secondary clock in telecommunications networks

Telecommunication networks of time division switches, interconnected by digital transmission are being put into place. At each switch, each incoming bit stream is brought into its own buffer. Then the clock in the switch reads each buffer to re-establish phase. Care must be taken to keep frequency differences between various clocks from becoming too large. Based on empirically defined data transmission requirements, one major network has determined that fractional frequency inequality between switches should be no worse than 1.7 X 10 to the minus 9 power. A network needs near frequency equality between its own switches, and also between its switches and other networks with which it interfaces. As a practical matter, the best way to achieve needed frequency equality is for each network to have master clock with an accuracy which is at least as good as 1 X 10 to the minus 10 power. The relationship between the master and the secondary clock is discussed. The questions of master clock accuracy and precision and the free-running capability of the secondary clocks are examined.

Risley, A.↗