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At least 235 records · Page 13
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Transformations to amorphous and X-type phases in swift heavy ion-irradiated Ln 2 O 3 and Mn 2 O 3

The intense, highly localized electronic excitation resulting from swift heavy ion irradiation induces phase transformations in many materials, including the lanthanide sesquioxides (Ln 2 O 3 ). To explore the effects of chemical composition on radiation-induced transformations, the structural responses of several related sesquioxides to swift heavy ion irradiation were compared. Polycrystalline Nd 2 O 3 , Eu 2 O 3 , Yb 2 O 3 , and Mn 2 O 3 were irradiated by 946 MeV Au ions to a range of ion fluences up to 2 × 10 13 cm -2 , and structural modifications were characterized using beamline-based in situ x-ray diffraction (XRD) and Rietveld refinement. Amorphization was induced in Nd 2 O 3 , Eu 2 O 3 , and Mn 2 O 3 , with the extent of the induced transformation following a clear dependence on cation ionic radius. Nd 2 O 3 and Eu 2 O 3 , having the largest cations, rapidly amorphized, whereas Mn 2 O 3 , having the smallest cation, experienced only a slight loss of crystallinity at the highest fluences studied. The radiation response was different for Yb 2 O 3 , which underwent a sluggish transformation to a nonequilibrium X-type phase. Furthermore, the crystalline-to-amorphous transformations proceeded by direct-impact mechanisms, while the C-to-X transformation proceeded by a multi-impact mechanism.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2022

Role of morphology in defect formation and photo-induced carrier instabilities in amorphous indium oxide

Ab initio molecular dynamics liquid-quench simulations and hybrid density functional calculations are performed to model the effects of room-temperature atomic fluctuations and photo-illumination on the structural and electronic properties of amorphous sub-stoichiometric In 2 O 2.96 . A large configurational ensemble is employed to reliably predict the distribution of localized defects as well as their response to the thermal and light activation. The results reveal that the illumination effects on the carrier concentration are greater in amorphous configurations with shorter In–O bond length and reduced polyhedral sharing as compared to the structures with a more uniform morphology. Further, the obtained correlation between the photo-induced carrier density and the reduction in the number of fully coordinated In-atoms implies that metal oxides with a significant fraction of crystalline/amorphous interfaces would show a more pronounced response to illumination. Photo-excitation also produces In–O 2 –In defects that have not been previously found in sub-stoichiometric amorphous oxides; these defects are responsible for carrier instabilities due to overdoping.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2023

Electrical, optical, and magnetic properties of amorphous yttrium iron oxide thin films and consequences for non-local resistance measurements

We present magnetic characterization, charge resistivity, and optical photoluminescence measurements on amorphous yttrium iron oxide thin films ( ⁠a-Y–Fe–O), with supporting comparisons to amorphous germanium (⁠ a-Ge) films. We measured magnetic properties with both SQUID magnetometry and polarized neutron reflectometry. These results not only confirm that a-Y–Fe–O is a disordered magnetic material with strong predominantly antiferromagnetic exchange interactions and a high degree of frustration, but also that it is best understood electrically as a disordered semiconductor. As with amorphous germanium, a-Y–Fe–O obeys expectations for variable-range hopping through localized electron states over a wide range of temperature. We also clarify the consequences of charge transport through such a semiconducting medium for non-local voltage measurements intended to probe spin transport in nominally insulating magnetic materials. We further compare non-local resistance measurements made with “quasi-dc” automated current reversal to ac measurements made with a lock-in amplifier. These show that the “quasi-dc” measurement has an effective ac current excitation with frequency up to approximately 22 Hz, and that this effective ac excitation can cause artifacts in these measurements including incorrect sign of the non-local resistance. Here, this comprehensive investigation of non-local resistance measurements in a-Y–Fe–O shows no evidence of spin transport on micrometer length scales, which is contrary to our original work, and in line with more recent investigations by other groups.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Atomic arrangements in an amorphous CoFeB ribbon extracted via an analysis of radial distribution functions

Here we discuss the atomic structure of amorphous ferromagnetic FeCoB alloys, which are used widely in spintronics applications. Specifically, we obtain the pair-distribution functions for various atomic pairs based on high-energy x-ray diffraction data taken from an amorphous Co 20 Fe 61 B 19 specimen. We start our reverse Monte Carlo cycles to determine the disordered structure with a two-phase model in which a small amount of cobalt is mixed with Fe 23 B 6 as a second phase. The structure of the alloy is found to be heterogeneous, where the boron atoms drive disorder through the random occupation of the atomic network. Our analysis also indicates the presence of small cobalt clusters that are embedded in the iron matrix and percolating the latter throughout the structure. This morphology can explain the enhanced spin polarization observed in amorphous magnetic materials.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

Amorphization and siliconization of silicon carbide as a first wall material

The understanding and prediction of silicon carbide (SiC) material evolution exposed to SOL plasma conditions is of prime interest because SiC represents a promising main chamber wall plasma-facing material for next-step fusion devices (low hydrogenic diffusion, good mechanical and thermal properties under neutron irradiation). Gross and net Si erosion rates from SiC surfaces in contact with a well-diagnosed L-mode plasma in the DIII-D tokamak have been simulated and the surface concentrations of impurities have been tracked as a function of time. Coupled simulation of surface model and impurity transport demonstrates amorphization of crystalline SiC exposed to L-mode plasma due to the accumulation of displacement damages under ion irradiation. This affects the lifetime of SiC plasma facing components. Surface evolution is tightly coupled to impurity transport in the plasma and therefore needs to be integrated with impurity transport simulations to effectively predict Si erosion rates and sub-surface concentrations as a function of time. The simulation workflow couples a semi-analytical surface model to the impurity transport code GITR. The surface model is a homogeneous mixed-material model that tracks physical & chemical sputtering and reflection of impurities. Gross erosion is primarily influenced by the background plasma parameters and redeposition patterns are mainly influenced by the prompt redeposition due to the gyro-orbits of impurity ions. Although crystalline form of SiC is preferable for fusion wall applications because of resistance to neutron irradiation, this work indicates that crystalline SiC will undergo amorphization under D plasma contact with implications of higher sputtering and fuel retention. These results direct us to explore the effects of amorphization on crystalline SiC and further the physics basis of SiC usage as first wall material for fusion environments.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2023

Development of a novel, windowless, amorphous selenium based photodetector for use in liquid noble detectors

Detection of the vacuum ultraviolet (VUV) scintillation light produced by liquid noble elements is a central challenge in order to fully exploit the available timing, topological, and calorimetric information in detectors leveraging these media. Here in this paper, we characterize a novel, windowless amorphous selenium based photodetector with direct sensitivity to VUV light. We present here the manufacturing and experimental setup used to operate this detector at low transport electric fields (2.7–5.2 V/μm) and across a wide range of temperatures (77 K–290 K). This work shows that the first proof-of-principle windowless amorphous selenium device is robust under cryogenic conditions, responsive to VUV light at cryogenic temperatures, and preserves argon purity. These findings motivate a continued exploration of amorphous selenium devices for simultaneous detection of scintillation light and ionization charge in noble element detectors.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2026

Electron-irradiation induced creep in amorphous alloys

Electron-irradiation induced creep rates in amorphous alloys, a-SiO2, Fe79B16Si5, Cu60Ta40, and Cu50Ti50, were measured at room temperature using a miniaturized beam-bending apparatus within a transmission electron microscope operated at 200 keV. The creep rates of these amorphous samples increased nearly linearly with both e-beam current density and applied stress, while a reference crystalline (c-)SiO2 sample failed to creep under the same conditions. The irradiation induced creep compliance of a-SiO2 was ~ 15 times larger than that of Fe79B16Si5 and over 1,000 times larger than that of the two Cu alloys. Molecular dynamics computer simulations were employed to simulate electron irradiation induced creep using interatomic potentials representing amorphous Cu75Zr25, Ni80P20, and SiO2 as model systems. The irradiation induced creep compliances calculated for Cu75Zr25 during 200 keV electron irradiation provided good quantitative agreement with the two Cu-based alloys, but that for a-SiO2 was ~ 180 times too small. These results indicate that unlike neutron or ion-beam induced creep in a-SiO2, creep under electron irradiation is dominated by the effects of ionization owing largely to the far higher ratio of electronic stopping to nuclear stopping for electrons than for ions.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Universal L - 3 finite-size effects in the viscoelasticity of amorphous systems

We present a theory of viscoelasticity of amorphous media, which takes into account the effects of confinement along one of three spatial dimensions. The framework is based on the nonaffine extension of lattice dynamics to amorphous systems, or nonaffine response theory. The size effects due to the confinement are taken into account via the nonaffine part of the shear storage modulus G'. The nonaffine contribution is written as a sum over modes in k-space. With a rigorous argument based on the analysis of the k-space integral over modes, it is shown that the confinement size L in one spatial dimension, e.g., the z axis, leads to a infrared cutoff for the modes contributing to the nonaffine (softening) correction to the modulus that scales as L -3 . Corrections for finite sample size D in the two perpendicular dimensions scale as ~(L/D) 4 , and are negligible for L«D. For liquids it is predicted that G'~L -3 is in agreement with a previous more approximate analysis, whereas for amorphous materials G'~G' bulk +βL -3 . For the case of liquids, four different experimental systems are shown to be very well described by the L-3 law. The theory can also explain previous simulation data of confined jammed granular packings.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Potential for exciton condensation in a highly conductive amorphous polymer

An outstanding challenge in synthesis and theory is to develop molecular materials at ambient conditions that exhibit highly efficient energy transfer. Here, in this study, we demonstrate the potential of a recently synthesized, highly conductive amorphous material—a nickel tetrathiafulvalene-tetrathiolate (NiTTFtt) polymer—to become an exciton condensate—a Bose-Einstein condensate of particle-hole pairs, known as excitons, that supports dissipationless flow of excitation energy. While exciton condensates have recently been realized in ordered materials, we show by advanced electronic structure calculations that this highly correlated phenomenon can potentially be realized in molecularly tailored, amorphous materials. In contrast to the Bechgaard salts that support superconductivity at compressed geometries requiring high pressures, we show that the recently synthesized, amorphous NiTTFtt polymer exhibits the computational signature of exciton condensation at experimentally realizable geometries, occurring at ambient pressures. Results suggest that superfluidity in this system and related systems—including van der Waals structures, molecular metals with extended-TTF dithiolate ligands, and Bechgaard salts—may occur via a nontraditional excitonic mechanism tuneable according to system composition, geometry, size, and charge. This study prompts further experimental investigation of the rational design of molecularly scaled exciton condensates with potential applications to efficient transport in technologically relevant materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Multielectrode electrochemical cell for in situ structural characterization of amorphous thin-film catalysts using high-energy X-ray scattering

A multielectrode-based electrochemical cell allows the structural characterization of an amorphous thin-film water oxidation catalyst under various electrochemical potentials using high-energy X-ray scattering and atomic pair distribution function (PDF) techniques. A multielectrode with five electrodes provides a sufficiently low background signal to enable high-energy X-ray scattering (HEXS) measurements and amplifies the extremely low HEXS signals from samples for high-resolution PDF analysis of in situ data from thin-film catalysts. Glassy carbon (GC) creates a relatively low intensity HEXS pattern and is used as a working electrode. Instead of a three-dimensional (3D) porous electrode architecture, the flat geometry of the electrode enables various deposition techniques to be used for the preparation of a highly conductive metal oxide layer. PDF analysis demonstrates high spatial resolution for a 230 nm thick amorphous iridium oxide film deposited on two roughened 60 µm thick GC electrodes. The PDF analysis resolves the domain size and distinguishes changes in fine structure which are directly correlated with the structure and function of the catalysts. In conclusion, the results bring the opportunity to analyze the structure of nanometre-scale amorphous thin-film catalysts in an electrolyte-compatible and compact 3D-printed electrochemical cell in a three-electrode configuration.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Inelastic relaxation processes in amorphous sodium silicates

During fracture amorphous oxides exhibit irreversible processes, including inelastic and nonrecoverable relaxation effects in the process zone surrounding the crack tip. Here, classical molecular dynamics simulations were used with a reactive forcefield to evaluate inelastic relaxation processes in five amorphous sodium silicate compositions. Overall, the 20% Na 2 O-SiO 2 (NS20) composition exhibited the most inelastic relaxation, followed by the 15% Na 2 O-SiO 2 (NS15) composition, the 25% Na 2 O-SiO 2 (NS25) composition, and finally the 10% (NS10) and 30% (NS30) Na 2 O-SiO 2 compositions. Coordination analysis of the Na + ions identified that during inelastic relaxation the Na+ ions were increasingly coordinated by nonbridging oxygens (NBOs) for the NS10 and NS15 compositions, which was supported by radial analysis of the O-Na-O bond angles surrounding the crack tip. Across the sodium silicate compositional range, two different inelastic relaxation mechanism were identified based on the amount of bridging oxygens (BOs) and NBOs in the Na+ ion coordination shell. At lower (NS10) and higher (NS30) sodium compositions, the entire structured relaxed toward the crack tip. In contrast at intermediate sodium concentrations (NS20) the Na + ion migrates toward the crack tip separately from the network structure. By developing a fundamental understanding of how modified silica systems respond to static stress fields, we will be able to predict how varying amorphous silicate systems exhibit slow crack growth.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Ultimate Suppression of Thermal Transport in Amorphous Silicon Nitride by Phononic Nanostructure.

Engineering the thermal conductivity of amorphous materials is highly essential for the thermal management of future electronic devices. Here, we demonstrate the impact of ultrafine nanostructuring on the thermal conductivity reduction of amorphous silicon nitride (a-Si3N4) thin films, in which the thermal transport is inherently impeded by the atomic disorders. Ultrafine nanostructuring with feature sizes below 20 nm allows us to fully suppress contribution of the propagating vibrational modes (propagons), leaving only the diffusive vibrational modes (diffusons) to contribute to thermal transport in a-Si3N4. A combination of the phonon-gas kinetics model and the Allen-Feldmann theory reproduced the measured results without any fitting parameters. The thermal conductivity reduction was explained as extremely strong diffusive boundary scattering of both propagons and diffusIons. These findings give rise to substantial tunability of thermal conductivity of amorphous materials, which enables us to provide better thermal solutions in microelectronic devices.

Tambo, Naoki↗
DOE OSTI2023

Thin film design of amorphous hafnium oxide nanocomposites enabling strong interfacial resistive switching uniformity

A design concept of phase-separated amorphous nanocomposite thin films is presented that realizes interfacial resistive switching (RS) in hafnium-oxide-based devices. The films are formed by incorporating an average of 7% Ba into hafnium oxide during pulsed laser deposition at temperatures ≤400°C. The added Ba prevents the films from crystallizing and leads to ~20-nm-thin films consisting of an amorphous HfO x host matrix interspersed with ~2-nm-wide, ~5-to-10-nm-pitch Ba-rich amorphous nanocolumns penetrating approximately two-thirds through the films. This restricts the RS to an interfacial Schottky-like energy barrier whose magnitude is tuned by ionic migration under an applied electric field. Resulting devices achieve stable cycle-to-cycle, device-to-device, and sample-to-sample reproducibility with a measured switching endurance of ≥10 4 cycles for a memory window ≥10 at switching voltages of ±2 V. Each device can be set to multiple intermediate resistance states, which enables synaptic spike-timing–dependent plasticity. The presented concept unlocks additional design variables for RS devices.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Atomistic nature of amorphous graphite

This paper focuses on the structural, electronic, and vibrational features of amorphous graphite [R. Thapa et al, Phys. Rev. Lett., 2022, 128, 236402]. The structural order in amorphous graphite is discussed and compared with graphite and amorphous carbon. The electronic density of states and localization in these phases were analyzed. Spatial projection of charge densities in the π bands showed a high charge concentration on participating atoms in connecting hexagons. A vibrational density of states was computed and is potentially an experimentally testable fingerprint of the material. An analysis of the vibrational modes was carried out using the phase quotient, and the mode stretching character. The average thermal conductivity calculated for aG was 0·85 and 0·96 W/cmK at room temperature and 1000 K, respectively.

Chemistry↗
DOE OSTI2023

Amorphous Mn2SiO4: A potential manganese phase in the stagnant slab

Abstract Tephroite (Mn2SiO4), together with some manganese (Mn)-rich mineral inclusions, has been found in ophiolite-hosted diamonds, possibly originating from Mn-nodules and sediments that were once deposited on the oceanic floor and later subducted into the deep mantle, which provides evidence for oceanic crustal recycling. However, the state and behavior of tephroite under high-pressure and high-temperature conditions remain poorly understood. In this study, we conducted in situ synchrotron single-crystal X-ray diffraction (XRD) and Raman spectroscopy of synthetic tephroite up to ~30 GPa and ~900 K. The XRD and Raman spectroscopy experiments in this study first show that tephroite undergoes a pressure-induced, irreversible, amorphous transformation above ~20 GPa. Temperature (<900 K) is found to be an insignificant factor governing the process of amorphous transformation. Amorphous tephroite may be a potential phase in a rapidly cooling oceanic lithospheric subduction slab stagnating at the bottom of the mantle transition zone.

Geochemistry & Geophysics↗
DOE OSTI2021

Fabricating Diamond-like Amorphous Carbon

Using a magnetically confined hot hollow cathode PE-CVD, hydrocarbon gas is decomposed under a diluent gas to deposit hydrogenated amorphous carbon onto a sample holder. During the fabrication of the hydrogenated amorphous carbon, the electric potential, electron temperature, and electron density of the plasma are measured with a Langmuir probe. Raman spectroscopy is used to determine the structural and electronic characterization of the final hydrogenated amorphous carbon solid.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Multiplication of freestanding III-V semiconductor membranes from a single wafer by alternating growth with amorphous graphene interlayer

Freestanding single-crystalline III-V compound semiconductors are important building blocks for functional devices due to their high electron mobilities, a wide range of bandgaps, and excellent optoelectronic properties. Despite efforts to produce such membranes by detaching epitaxial layers from donor wafers, current methods suffer from either slow processes or poor material quality. Here, we demonstrate a technique to grow and harvest multiple epitaxial membranes with extremely high throughput at the wafer scale. For this, a process to directly grow amorphous graphene on III-V substrates in metal-organic chemical vapor deposition reactors is developed, which enables an advanced remote epitaxy scheme comprised of multiple alternating layers of amorphous graphene and III-V epitaxial layers that can be formed by a single epitaxy run. Each epilayer in the multi-stack structure is then harvested by layer-by-layer peeling, producing multiple freestanding membranes with unprecedented throughput from a single wafer. Because amorphous graphene provides a weak van der Waals interface that allows peeling at the interface without damaging the epilayer or the substrate, wafers can be reused for subsequent membrane production. Therefore, this work represents a meaningful step toward high-throughput and low-cost production of single-crystal membranes that can be heterointegrated.

Han, Ne Myo↗
DOE OSTI2022

The Kinetics of Aragonite Formation from Solution via Amorphous Calcium Carbonate

Magnesium doped Amorphous Calcium Carbonate was synthesised from precursor solutions containing varying amounts of calcium, magnesium, H2O and D2O. The Mg/Ca ratio in the resultant Amorphous Calcium Carbonate was found to vary linearly with the Mg/Ca ratio in the precursor solution. All samples crystallised as aragonite. No Mg was found in the final aragonite crystals. Changes in the Mg to Ca ratio were found to only marginally effect nucleation rates but strongly effect crystal growth rates. These results are consistent with a dissolution-reprecipitation model for aragonite formation via an Amorphous Calcium Carbonate intermediate.

36 MATERIALS SCIENCE↗