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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 235 records · Page 13
All sourcesNASA NTRSDOE OSTI
NASA NTRS1994

Reaction and Protection of Electrical Wire Insulators in Atomic-oxygen Environments

Atomic-oxygen erosion on spacecraft in low Earth orbit is an issue which is becoming increasingly important because of the growing number of spacecraft that will fly in the orbits which have high concentrations of atomic oxygen. In this investigation, the atomic-oxygen durability of three types of electrical wire insulation (carbon-based, fluoropolymer, and polysiloxane elastomer) were evaluated. These insulation materials were exposed to thermal-energy atomic oxygen, which was obtained by RF excitation of air at a pressure of 11-20 Pa. The effects of atomic-oxygen exposure on insulation materials indicate that all carbon-based materials erode at about the same rate as polyamide Kapton and, therefore, are not atomic-oxygen durable. However, the durability of fluoropolymers needs to be evaluated on a case by case basis because the erosion rates of fluoropolymers vary widely. For example, experimental data suggest the formation of atomic fluorine during atomic-oxygen amorphous-fluorocarbon reactions. Dimethyl polysiloxanes (silicone) do not lose mass during atomic-oxygen exposure, but develop silica surfaces which are under tension and frequently crack as a result of loss of methyl groups. However, if the silicone sample surfaces were properly pretreated to provide a certain roughness, atomic oxygen exposure resulted in a sturdy, non-cracked atomic-oxygen durable SiO2 layer. Since the surface does not crack during such silicone-atomic oxygen reaction, the crack-induced contamination by silicone can be reduced or completely stopped. Therefore, with proper pretreatment, silicone can be either a wire insulation material or a coating on wire insulation materials to provide atomic-oxygen durability.

Hung, Ching-Cheh↗
NASA NTRS1990

MIS capacitor studies on silicon carbide single crystals

Cubic SIC metal-insulator-semiconductor (MIS) capacitors with thermally grown or chemical-vapor-deposited (CVD) insulators were characterized by capacitance-voltage (C-V), conductance-voltage (G-V), and current-voltage (I-V) measurements. The purpose of these measurements was to determine the four charge densities commonly present in an MIS capacitor (oxide fixed charge, N(f); interface trap level density, D(it); oxide trapped charge, N(ot); and mobile ionic charge, N(m)) and to determine the stability of the device properties with electric-field stress and temperature. The section headings in the report include the following: Capacitance-voltage and conductance-voltage measurements; Current-voltage measurements; Deep-level transient spectroscopy; and Conclusions (Electrical characteristics of SiC MIS capacitors).

Kopanski, J. J.↗
NASA NTRS1977

Experimental performance of an ablative material as an external insulator for a hypersonic research aircraft

An ablative material composed of silica-filled elastomeric silicone was tested to evaluate its thermal and structural performance as an external insulator, or heat shield, for a hypersonic research aircraft. The material was also tested to determine whether it would form a durable char layer when initially heated and thereafter function primarily as an insulator with little further pyrolysis or char removal. Aerothermal tests were representative of nominal Mach 6 cruise conditions of the aircraft, and additional tests were representative of Mach 8 cruise and interference heating conditions. Radiant heating tests were used to simulate the complete nominal Mach 6 surface-temperature history. The silica char that formed during aerothermal tests was not durable. The char experienced a general and preferential surface recession, with the primary mechanism for char removal being erosion. Tests revealed that radiant heating is not a valid technique for simulating aerodynamic heating of the material.

Puster, R. L.↗
NASA NTRS1971

Metallization failures

Metallization-related failure mechanisms were shown to be a major cause of integrated circuit failures under accelerated stress conditions, as well as in actual use under field operation. The integrated circuit industry is aware of the problem and is attempting to solve it in one of two ways: (1) better understanding of the aluminum system, which is the most widely used metallization material for silicon integrated circuits both as a single level and multilevel metallization, or (2) evaluating alternative metal systems. Aluminum metallization offers many advantages, but also has limitations particularly at elevated temperatures and high current densities. As an alternative, multilayer systems of the general form, silicon device-metal-inorganic insulator-metal, are being considered to produce large scale integrated arrays. The merits and restrictions of metallization systems in current usage and systems under development are defined.

Beatty, R.↗
NASA NTRS1983

Sputtering of silicon and its compounds in the electronic stopping region

Silicon, silicon dioxide, and silicon nitride have been sputtered with chlorine ions at 5 MeV and 20 MeV. While the yield from the silicon target was unmeasurably low, the insulating compounds exhibited the enhanced yields observed in other insulating targets. The yield follows the electronic stopping power and seems to be independent of the target's thermal properties. Some of the data suggest that the enhanced sputtering mechanism may be active in extremely thin films (not less than 3 monolayers).

Qiu, Y.↗
NASA NTRS1996

Silicon Carbide Transistor For Detecting Hydrocarbon Gases

Proposed silicon carbide variable-potential insulated-gate field-effect transistor specially designed for use in measuring concentrations of hydrocarbon gases. Devices like this prove useful numerous automotive, industrial, aeronautical, and environmental monitoring applications.

Shields, Virgil B.↗
NASA NTRS2000

Analysis of Aluminum-Nitride SOI for High-Temperature Electronics

We use numerical simulation to investigate the high-temperature (up to 500K) operation of SOI MOSFETs with Aluminum-Nitride (AIN) buried insulators, rather than the conventional silicon-dioxide (SiO2). Because the thermal conductivity of AIN is about 100 times that of SiO2, AIN SOI should greatly reduce the often severe self-heating problem of conventional SOI, making SOI potentially suitable for high-temperature applications. A detailed electrothermal transport model is used in the simulations, and solved with a PDE solver called PROPHET In this work, we compare the performance of AIN-based SOI with that of SiO2-based SOI and conventional MOSFETs. We find that AIN SOI does indeed remove the self-heating penalty of SOL However, several device design trade-offs remain, which our simulations highlight.

Biegel, Bryan A.↗
NASA NTRS2009

Further Analysis of MISSE Polymeric Materials at MSFC

Many different spacecraft materials were flown as part of the Materials on International Space Station Experiment (MISSE). MISSE was exposed to the low Earth orbital environment of atomic oxygen, ultraviolet radiation, thermal cycling, and hard vacuum. A number of polymer samples did not survive the atomic oxygen attack. Mass and thickness loss measurements indicate the durability of the remaining polymeric materials to withstand the space environment. Results from the one-year exposure on MISSE-3 and MISSE-4 are compared to those from the four-year exposure on MISSE-1 and MISSE-2. Solar absorptance and infrared emittance measurements are given for thermal control materials. Transmission measurements are given where appropriate. A wide variety of polymeric materials were flown on MISSE, ranging from extremely thin films for solar sails to bulk materials. Some of the candidate solar sail materials were flown underneath magnesium fluoride windows to eliminate atomic oxygen effects and allow the study of ultraviolet radiation damage. Exposed seal materials include Viton , silicone, and fluorosilicone. Multi-layer insulation materials were flown, including atomic oxygen-resistant polymers. Also flown were candidate inflatable materials for a High Altitude Airship or inflatable lunar habitat. Polymer materials being flown on MISSE-6 are discussed.

Finckenor, Miria M.↗
NASA NTRS1985

High-efficiency silicon solar cells

Fabrication and characterization of high-efficiency metal insulator, n-p (MINP) cells is described. Particular attention was paid to development of measurement methods for surface recombination and density of surface states. A modified Rosier test structure was used successfully for density of surface states. Silicon oxide and silicon nitride passivants were studied. Heat treatment after plasma enhanced chemical vapor deposition (CVD) of silicon nitride was shown to be beneficial. A more optimum emitter concentration profile was modeled.

Olsen, L. C.↗
DOE OSTI2024

Optical contrast analysis of α -RuCl 3 nanoflakes on oxidized silicon wafers

α-RuCl 3 , a narrow-band Mott insulator with a large work function, offers intriguing potential as a quantum material or as a charge acceptor for electrical contacts in van der Waals devices. In this work, we perform a systematic study of the optical reflection contrast of α-RuCl 3 nanoflakes on oxidized silicon wafers and estimate the accuracy of this imaging technique to assess the crystal thickness. Via spectroscopic micro-ellipsometry measurements, we characterize the wavelength-dependent complex refractive index of α-RuCl 3 nanoflakes of varying thickness in the visible and near-infrared. Building on these results, we simulate the optical contrast of α-RuCl 3 nanoflakes with thicknesses below 100 nm on SiO 2 /Si substrates under different illumination conditions. We compare the simulated optical contrast with experimental values extracted from optical microscopy images and obtain good agreement. Finally, we show that optical contrast imaging allows us to retrieve the thickness of the RuCl 3 nanoflakes exfoliated on an oxidized silicon substrate with a mean deviation of –0.2 nm for thicknesses below 100 nm with a standard deviation of only 1 nm. Our results demonstrate that optical contrast can be used as a non-invasive, fast, and reliable technique to estimate the α-RuCl 3 thickness.

2D materials↗
NASA NTRS1977

Measurement of insulation integrity of IUE camera tube facsimiles by partial discharges method and diffusion of gases through various silicone rubbers

Several dummy tubes imitating the IUE Camera System design were encapsulated with Solithane 2, Conathane EN-11, Green and Black Hysols and SMRD 432. Various flaws were purposefully placed in some of these. Partial discharge testing in vacuum under direct voltage conditions was carried once a week for 12 weeks, 15 kv dc being applied during normal working hours for 40 hours duration per week. None of the units showed much damage during this time judging by the P.D. energy histograms. A more complete mathematical presentation is given on diffusion and permeation than previously. Measurements of diffusion constants for various silicone rubbers are carried out by the Time-Lag method and compared to other determinations in the literature. Calculations of the time required for diffusion through a thick wall are demonstrated in the long time approximation and for dimensions pertaining to void and wall sizes of a delamination problem in the LANDSAT-C vidicon tubes. An actual delaminated LANDSAT-C tube and some facsimiles are immersed in vacuum for long periods and tested for catastrophic breakdown due to diffusion of gas, by application of high voltage.

Bever, R. S.↗
DOE OSTI2025

Optimizing Insulation Design for Transformers in Medium Voltage Power Conversion Systems

Medium-frequency transformers (MFTs) play a crucial role in medium-voltage (MV) solidstate transformer (SST) systems, particularly in extreme fast charging applications. Achieving partial discharge (PD)-free operation while maintaining high power density is a significant challenge due to the high electric field (E-field) stresses inherent in MV applications. This dissertation focuses on the insulation design and optimization of MFTs used in both the main power electronics circuits and auxiliary power supplies. The study begins with an overview of insulation testing methodologies, including high potential tests, basic insulation level tests, and PD tests, which are critical for evaluating MFT insulation reliability. Given the importance of PD-free operation for long-term reliability, particular emphasis is placed on understanding PD mechanisms, including void, corona, and surface discharge, and their mitigation strategies. A high voltage isolated auxiliary power supply is then introduced, utilizing a gapped transformer encapsulated in silicone gel. This design achieves PD-free insulation up to 18 kV RMS while maintaining low coupling capacitance to minimize common-mode current. The proposed solution ensures reliable operation in MV environments and offers a scalable approach for auxiliary power in cascaded SST architectures. To improve MFT insulation in main power conversion circuits, a novel structure is developed using polypropylene sheets and potting compounds to create a void-free air gap, effectively mitigating E-field intensity. A prototype transformer with this insulation structure is built and achieves PD-free operation up to 30 kV RMS. This design is experimentally validated in a resonant converter operating at 46 kW, demonstrating its feasibility for MV SST applications. Further optimization is implemented to enhance MFT performance for dual-active-bridge(DAB) converters by integrating a semiconductive shielding layer within the insulation structure. This shielding layer improves the magnetic coupling coefficient while effectively confining the E-field within high insulation materials, thereby reducing eddy current losses. The optimized MFT achieves PD-free operation at 12.6 kV RMS and is successfully tested in a DAB converter operating at 43 kW, which meets the insulation requirements for a 13.2 kV SST system. This dissertation advances MFT insulation design by introducing and experimentally validating novel approaches that improve high voltage insulation while optimizing magnetic coupling and manufacturability. The proposed insulation structures enable PD-free operation while minimizing insulation material usage and simplifying assembly, making them ideal for high power, high voltage applications.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2020

Laser writing of nitrogen-doped silicon carbide for biological modulation

Conducting or semiconducting materials embedded in insulating polymeric substrates can be useful in biointerface applications; however, attainment of this composite configuration by direct chemical processes is challenging. Laser-assisted synthesis has evolved as a fast and inexpensive technique to prepare various materials, but its utility in the construction of biophysical tools or biomedical devices is less explored. Here, we use laser writing to convert portions of polydimethylsiloxane (PDMS) into nitrogen-doped cubic silicon carbide (3C-SiC). The dense 3C-SiC surface layer is connected to the PDMS matrix via a spongy graphite layer, facilitating electrochemical and photoelectrochemical activity. We demonstrate the fabrication of arbitrary two-dimensional (2D) SiC-based patterns in PDMS and freestanding 3D constructs. To establish the functionality of the laser-produced composite, we apply it as flexible electrodes for pacing isolated hearts and as photoelectrodes for local peroxide delivery to smooth muscle sheets.

59 BASIC BIOLOGICAL SCIENCES↗
NASA NTRS1981

Development of thin wraparound junction silicon solar cells

The state of the art technologies was applied to fabricate 50 micro thick 2x4 cm, coplanar back contact (CBC) solar cells with AMO efficiency above 12%. A requirement was that the cells have low solar absorptance. A wraparound junction (WAJ) with wraparound metallization was chosen. This WAJ approach avoided the need for very complex fixturing, especially during rotation of the cells for providing adequate contacts over dielectric edge layers. The contact adhesion to silicon was considered better than to an insulator. It is indicated that shunt resistance caused by poor WAJ diode quality, and series resistance from the WAJ contact, give good cell performance. The cells developed reached 14 percent AMO efficiency (at 25 C), with solar absorptance values of 0.73. Space/cell environmental tests were performed on these cells and the thin CSC cells performed well. The optimized design configuration and process sequence were used to make 50 deliverable CBC cells. These cells were all above 12 percent efficiency and had an average efficiency of -13 percent. Results of environmental tests (humidity-temperature, thermal shock, and contact adherence) are also given.

Ho, F.↗
NASA NTRS1984

Alternate nozzle ablative materials program

Four subscale solid rocket motor tests were conducted successfully to evaluate alternate nozzle liner, insulation, and exit cone structural overwrap components for possible application to the Space Shuttle Solid Rocket Motor (SRM) nozzle asasembly. The 10,000 lb propellant motor tests were simulated, as close as practical, the configuration and operational environment of the full scale SRM. Fifteen PAN based and three pitch based materials had no filler in the phenolic resin, four PAN based materials had carbon microballoons in the resin, and the rest of the materials had carbon powder in the resin. Three nozzle insulation materials were evaluated; an aluminum oxide silicon oxide ceramic fiber mat phenolic material with no resin filler and two E-glass fiber mat phenolic materials with no resin filler. It was concluded by MTI/WD (the fabricator and evaluator of the test nozzles) and NASA-MSFC that it was possible to design an alternate material full scale SRM nozzle assembly, which could provide an estimated 360 lb increased payload capability for Space Shuttle launches over that obtainable with the current qualified SRM design.

Kimmel, N. A.↗
NASA NTRS1993

Fabrication of high-quality superconductor-insulator-superconductor junctions on thin SiN membranes

We have successfully fabricated high-quality and high-current density superconductor-insulator-superconductor (SIS) junctions on freestanding thin silicon nitride (SIN) membranes. These devices can be used in a novel millimeter-wave and THz receiver system which is made using micromachining. The SIS junctions with planar antennas were fabricated first on a silicon wafer covered with a SiN membrane, the Si wafer underneath was then etched away using an anisotropic KOH etchant. The current-voltage characteristics of the SIS junctions remained unchanged after the whole process, and the junctions and the membrane survived thermal cycling.

Garcia, Edouard↗