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Results for “Optical waveguides”

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At least 235 records · Page 13

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NASA NTRS2006

Optical resonator

The invention discloses a semi-ring Fabry-Perot (SRFP) optical resonator structure comprising a medium including an edge forming a reflective facet and a waveguide within the medium, the waveguide having opposing ends formed by the reflective facet. The performance of the SRFP resonator can be further enhanced by including a Mach-Zehnder interferometer in the waveguide on one side of the gain medium. The optical resonator can be employed in a variety of optical devices. Laser structures using at least one SRFP resonator are disclosed where the resonators are disposed on opposite sides of a gain medium. Other laser structures employing one or more resonators on one side of a gain region are also disclosed.

Taghavi-Larigani, Shervin↗

NASA NTRS2006

Optical resonator and laser applications

Taghavi-Larigani, Shervin↗

NASA NTRS1971

Quasioptical circuits relating to frequency multipliers.

Description of the various major components useful in a 30- to 60-GHz varactor doubler circuit employing quasi-optical techniques. A description is given of the required directional filters, waveguide tuners, and varactor mounts. An attempt is made to determine the potential efficiency of various quasi-optical multiplier mounts and also to compare the efficiency obtainable by quasi-optical techniques with that achievable in standard-waveguide multiplier mounts.

Kraemer, E.↗

NASA NTRS2007

Slot-Antenna/Permanent-Magnet Device for Generating Plasma

A device that includes a rectangular-waveguide/slot-antenna structure and permanent magnets has been devised as a means of generating a substantially uniform plasma over a relatively large area, using relatively low input power and a low gas flow rate. The device utilizes electron cyclotron resonance (ECR) excited by microwave power to efficiently generate plasma in a manner that is completely electrodeless in the sense that, in principle, there is no electrical contact between the plasma and the antenna. Plasmas generated by devices like this one are suitable for use as sources of ions and/or electrons for diverse material-processing applications (e.g., etching or deposition) and for ion thrusters. The absence of plasma/electrode contact essentially prevents plasma-induced erosion of the antenna, thereby also helping to minimize contamination of the plasma and of objects exposed to the plasma. Consequently, the operational lifetime of the rectangular-waveguide/ slot-antenna structure is long and the lifetime of the plasma source is limited by the lifetime of the associated charged-particle-extraction grid (if used) or the lifetime of the microwave power source. The device includes a series of matched radiating slot pairs that are distributed along the length of a plasma-source discharge chamber (see figure). This arrangement enables the production of plasma in a distributed fashion, thereby giving rise to a uniform plasma profile. A uniform plasma profile is necessary for uniformity in any electron- or ion-extraction electrostatic optics. The slotted configuration of the waveguide/ antenna structure makes the device scalable to larger areas and higher powers. All that is needed for scaling up is the attachment of additional matched radiating slots along the length of the discharge chamber. If it is desired to make the power per slot remain constant in scaling up, then the input microwave power must be increased accordingly. Unlike in prior ECR microwave plasma-generating devices, there is no need for an insulating window on the antenna. Such windows are sources of contamination and gradually become ineffective as they become coated with erosion products over time. These characteristics relegate prior ECR microwave plasma-generating devices to non-ion beam, non-deposition plasma applications. In contrast, the lack of need for an insulating window in the present device makes it possible to use the device in both ion-beam (including deposition) and electron-beam applications. The device is designed so that ECR takes place above each slot and the gradient of the magnetic field at each slot is enough to prevent backflow of plasma.

Foster, John E.↗

NASA NTRS1986

Polarizing Filter for Integrated Optics

Polarizing filter for titanium-doped lithium niobate light waveguide suppresses transverse magnetic (TM) mode of light propagation while allowing transverse electric (TE) mode to continue on its way. Filter - lithium niobate crystal - is expected to find many applications in integrated optical circuits.

Ramer, O. G.↗

NASA NTRS1988

Monolithic electro-optic modulator array

A PIN GaAlAs diode structure is provided with parameters for index guiding of light in a single mode. The index of refraction of the central layer I (which in practice may be lightly doped .pi. or .nu.) is greater than the p- and n-layers to create a slab waveguide in the transverse direction. Stripe contacts define separate waveguide channels that are separated electrically and optically by implanting protons or etching grooves between the stripe contacts in the upper layer. Separate reverse biasing voltages may be applied to the stripe contacts for modulation of the light in proportions to the voltage, either with absorption modulation, if the light wavelength is within about 500.ANG. of the bandgap of the .pi.-material, or phase-delay modulation, if the wavelength is separated from the bandgap of the .pi.-material by at least 900.ANG..

Robinson, Deborah L.↗

NASA NTRS1999

Photonic Switching Devices Using Light Bullets

A unique ultra-fast, all-optical switching device or switch is made with readily available, relatively inexpensive, highly nonlinear optical materials. which includes highly nonlinear optical glasses, semiconductor crystals and/or multiple quantum well semiconductor materials. At the specified wavelengths. these optical materials have a sufficiently negative group velocity dispersion and high nonlinear index of refraction to support stable light bullets. The light bullets counter-propagate through, and interact within the waveguide to selectively change each others' directions of propagation into predetermined channels. In one embodiment, the switch utilizes a rectangularly planar slab waveguide. and further includes two central channels and a plurality of lateral channels for guiding the light bullets into and out of the waveguide. An advantage of the present all-optical switching device lies in its practical use of light bullets, thus preventing the degeneration of the pulses due to dispersion and diffraction at the front and back of the pulses. Another advantage of the switching device is the relative insensitivity of the collision process to the time difference in which the counter-propagating pulses enter the waveguide. since. contrary to conventional co-propagating spatial solitons, the relative phase of the colliding pulses does not affect the interaction of these pulses. Yet another feature of the present all-optical switching device is the selection of the light pulse parameters which enables the generation of light bullets in nonlinear optical materials. including highly nonlinear optical glasses and semiconductor materials such as semiconductor crystals and/or multiple quantum well semiconductor materials.

Goorjian, Peter M.↗

NASA NTRS1982

Fast Holographic Comparator

Comparator is integrated-optical system constructed on a LiNb03sub. waveguide chip. Only the laser, lens and detector are external to chip. Aluminized surface gratings serve as input coupler and beam splitter. Light beams striking edges are returned by ordinary total internal reflection. Three operating modes are possible: A "screening" mode, an "identification" mode and a novel "self-subtraction" mode.

Vahey, D. W.↗

NASA NTRS1988

High frequency GaAlAs modulator and photodetector for phased array antenna applications

A waveguide Mach-Zehnder electro-optic modulator and an interdigitated photoconductive detector designed to operate at 820 nm, fabricated on different GaAlAs/GaAs heterostructure materials, are being investigated for use in optical interconnects in phased array antenna systems. Measured optical attenuation effects in the modulator are discussed and the observed modulation performance up to 1 GHz is presented. Measurements of detector frequency response are described and results presented.

Claspy, P. C.↗

NASA NTRS1989

High frequency GaAlAs modulator and photodetector for phased array antenna applications

Claspy, P. C.↗

NASA NTRSDate not supplied

Low-Loss Thin-Film Al-On-Si Microwave Resonators for Astronomy Applications Designing and Characterizing the Next Generation of Microwave Detectors

We present measurements of prototype thin film Al microwave kinetic inductance detectors (MKIDs) intended for application in the sub-mm astronomy balloon experiment EXCLAIM. The device we show is dark, or non-optically coupled, and contains 16 coplanar waveguide (CPW) resonators etched into a 261 nm sputter deposited Al layer on a Si wafer. The resonators span the f0 = 3.5 - 4 GHz range, and include both lambda=2 and lambda=4 resonators. Each resonator is coupled to the feedline using one of three alternating coupling designs. We performed transmission line measurements of the device for a series of excitation powers ranging from -90 dBm to -30 dBm, and at a series of base temperatures ranging from 73 mK to 400 mK. We observed quality factors of up to Qi 107 at a base temperature of 73 mK. The lambda=2 and lambda=4 resonators performed similarly, achieving comparable Qi values. The results of these measurements are actively informing the fi nal design of the EXCLAIM instrument. EXCLAIM will incorporate six spectrometers, each containing an array of over 300 resonators in the 420-540 GHz range.

Carrie Volpert↗

NASA NTRS1979

Proposed smart integrated-optical preprocessor using holographic subtraction

The paper presents a proposed integrated-optical preprocessor with a holographic subtraction. It is based on an optical analog of a set of N analog voltages formed by passing an optical plane wave, confined in an electrooptic waveguide, under a set of N electrodes to which the voltages are applied; in the limit in which diffraction is ignored, the wavefront of the emerging guided wave will have superimposed upon it N discrete phase shifts. Processors which operate upon voltages encoded in this manner are being fabricated; they include a comparator in which incoming data are compared to a holographic record of the optical analog of a reference set, and a 'smart' system based upon holographic self-subtraction, in which the processor can independently adapt to changes in background information. The preprocessor operation is described in the screening, identification, and the self-subtraction modes, and implementation of devices in an integrated optical configuration is discussed.

Verber, C. M.↗

NASA NTRS1981

CO2 laser waveguiding in proton implanted GaAs

Surface layers capable of supporting optical modes at 10.6 microns have been produced in n-type GaAs wafers through 300 keV proton implantation. The dominant mechanism for this effect appears to be free carrier compensation. Characterization of the implanted layers by analysis of infrared reflectivity spectra and synchronous coupling at 10.6 microns produced results in good agreement with elementary models. These results of sample characterization by infrared reflectivity and by CO2 laser waveguiding as implanted are presented and evaluated.

Jenkinson, H. A.↗

NASA NTRS2000

A Low Noise NbTiN-Based 850 GHz SIS Receiver for the Caltech Submillimeter Observatory

We have developed a niobium titanium nitride (NbTiN) based superconductor- insulator-superconductor (SIS) receiver to cover the 350 micron atmospheric window. This frequency band lies entirely above the energy gap of niobium (700 GHz), a commonly used SIS superconductor. The instrument uses an open structure twin-slot SIS mixer that consists of two Nb/AlN/NbTiN tunnel junctions, NbTiN thin-film microstrip tuning elements, and a NbTiN ground plane. The optical configuration is very similar to the 850 GHz waveguide receiver that was installed at the Caltech Submillimeter Observatory (CSO) in 1997. To minimize front-end loss, we employed reflecting optics and a cooled beamsplitter at 4 K. The instrument has an uncorrected receiver noise temperature of 205K DSB at 800 GHz and 410K DSB at 900 GHz. The degradation in receiver sensitivity with frequency is primarily due to an increase in the mixer conversion loss, which is attributed to the mismatch between the SIS junction and the twin-slot antenna impedance. The overall system performance has been confirmed through its use at the telescope to detect a wealth of new spectroscopic lines.

Kooi, J. W.↗

NASA NTRS1990

Diode laser array

A diode laser array comprises a substrate of a semiconductor material having first and second opposed surfaces. On the first surface is a plurality of spaced gain sections and a separate distributed Bragg reflector passive waveguide at each end of each gain section and optically connecting the gain sections. Each gain section includes a cavity therein wherein charge carriers are generated and recombine to generate light which is confined in the cavity. Also, the cavity, which is preferably a quantum well cavity, provides both a high differential gain and potentially large depth of loss modulation. Each waveguide has a wavelength which is preferably formed by an extension of the cavity of the gain sections and a grating. The grating has a period which provides a selective feedback of light into the gain sections to supporting lasing, which allows some of the light to be emitted from the waveguide normal to the surface of the substrate and which allows optical coupling of the gain sections. Also, the grating period provides an operating wavelength which is on the short wavelength side of the gain period of the gain sections required for laser oscillation. An RF pulse is applied so as to maximize the magnitude of the loss modulation and the differential gain in the gain sections. The array is operated by applying a DC bias to all the gain sections at a level just below the threshold of the gain sections to only one of the gain sections which raises the bias in all of the gain sections to a level that causes all of the gain sections to oscillate. Thus, a small bias can turn the array on and off.

Carlson, Nils W.↗

NASA NTRS1976

The waveguide laser - A review

The present article reviews the fundamental physical principles essential to an understanding of waveguide gas and liquid lasers, and the current technological state of these devices. At the present time, waveguide laser transitions span the visible through submillimeter regions of the wavelength spectrum. The introduction discusses the many applications of waveguide lasers and the wide variety of laser configurations that are possible. Section 1 summarizes the properties of modes in hollow dielectric waveguides of circular, rectangular, and planar cross section. Section 2 considers various approaches to optical feedback including internal and external mirror Fabry-Perot type resonators, hollow waveguide distributed feedback structures, and ring-resonant configurations. Section 3 discusses those aspects of molecular kinetic and laser theory pertinent to the design and optimization of waveguide gas lasers.

Degnan, J. J.↗

NASA NTRS2006

Silicon-Based Optical Modulator with Ferroelectric Layer

According to a proposal, a silicon dioxide layer in a high-speed, low-power, silicon- based electro-optical modulator would be replaced by a layer of lead zirconate titanate or other ferroelectric oxide material. The purpose of this modification is to enhance the power performance and functionality of the modulator. In its unmodified form, the particular silicon- based electro-optical modulator is of an advanced design that overcomes the speed limitation of prior silicon-based electro- optical modulators. Whereas modulation frequencies of such devices had been limited to about 20 MHz, this modulator can operate at modulation frequencies as high as 1 GHz. This modulator can be characterized as a silicon-waveguide-based metal oxide/semiconductor (MOS) capacitor phase shifter in which modulation of the index of refraction in silicon is obtained by exploiting the free-charge-carrier-plasma dispersion effect. As shown in the figure, the modulator includes an n-doped crystalline silicon slab (the silicon layer of a silicon- on-insulator wafer) and a p-doped polycrystalline silicon rib with a gate oxide layer (the aforementioned silicon dioxide layer) sandwiched between them. Under accumulation conditions, the majority charge carriers in the silicon waveguide modify the index of refraction so that a phase shift is induced in the optical mode propagating in the waveguide. The advantage of using an MOS capacitor phase shifter is that it is possible to achieve high modulation speed because there are no slow carrier-generation or -recombination processes involved in the accumulation operation. The main advantage of the proposed substitution of a ferroelectric oxide layer for the silicon dioxide layer would arise from the spontaneous polarization effect of the ferroelectric layer: This spontaneous polarization would maintain accumulation conditions in the absence of applied voltage. Consequently, once the device had been switched to a given optical state, it would remain in that state, even in the absence of applied voltage (in other words, even with power turned off). A secondary advantage is that because the ferroelectric layer would have an index of refraction larger than that of silicon dioxide, there could be some reduction of optical losses attributable to fabrication of the modulator

Sheldon, Douglas↗

NASA NTRS1982

Measurement and analysis of periodic coupling in silicon-clad planar waveguides

Computer modeling studies indicate that planar dielectric waveguides clad with silicon exhibit a damped periodic oscillation in their attenuation and phase characteristics. The effect is due to a periodic coupling between the lossy, guided modes in the silicon film and the TE0 mode of the dielectric waveguide. Experimental confirmation of the periodic coupling for a wavelength of 632.8 nm is presented. Propagation characteristics for a wavelength of 1150 nm were investigated for application in integrated optical modulators. Frequency filtering properties of silicon-clad waveguides are also examined and it is shown that the silicon thickness controls the filter response curve.

Mcwright, G. M.↗