NASA NTRS · 19820008039
CO2 laser waveguiding in proton implanted GaAs
Abstract
Surface layers capable of supporting optical modes at 10.6 microns have been produced in n-type GaAs wafers through 300 keV proton implantation. The dominant mechanism for this effect appears to be free carrier compensation. Characterization of the implanted layers by analysis of infrared reflectivity spectra and synchronous coupling at 10.6 microns produced results in good agreement with elementary models. These results of sample characterization by infrared reflectivity and by CO2 laser waveguiding as implanted are presented and evaluated.
Keep this discovery
Explore connections, maps & timelines
Jenkinson, H. A., Larson, D. C.. 1981-12-01. CO2 laser waveguiding in proton implanted GaAs. https://ntrs.nasa.gov/citations/19820008039
Cite the original work for its findings. Save a collection to share your selection of sources.