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At least 217 records · Page 12
All sourcesNASA NTRSDOE OSTI
NASA NTRS1986

Growth and characterization of epitaxial SrF2 on InP(100)

The epitaxial growth of 100-262.5-nm SrF2 films on n-type and p-type (100)InP in a conventional baked UHV system at base pressure about 200 ptorr, temperature 250-350 C, and growth rate from less than 100 to about 200 pm/s. Substrates are chemicomechanically polished, degreased, bombarded with 500-eV Ar ions for 3-4 min at 350 C, and annealed for 23-30 min at 350 C, producing a slightly In-rich (In/P = 1.02) In-island-free surface with a (4 x 1) or (1 x 1) LEED structure. Films grown at 350 C and less than 100 pm/s are found to be smooth and free of cracks in most cases, with a highly faceted (1 x 1) LEED structure. The electrical properties of the SrF2 films are found to be acceptable only when the ohmic contacts are applied prior to the substrate prior to SrF2 growth.

Sinharoy, S.↗
NASA NTRS2003

CuInS2 Films Deposited by Aerosol-Assisted Chemical Vapor Deposition Using Ternary Single-Source Precursors

Polycrystalline CuInS2 films were deposited by aerosol-assisted chemical vapor deposition using both solid and liquid ternary single-source precursors (SSPs) which were prepared in-house. Films with either (112) or (204/220) preferred orientation, had a chalcopyrite structure, and (112)-oriented films contained more copper than (204/220)-oriented films. The preferred orientation of the film is likely related to the decomposition and reaction kinetics associated with the molecular structure of the precursors at the substrate. Interestingly, the (204/220)-oriented films were always In-rich and were accompanied by a secondary phase. From the results of post-growth annealing, etching experiments, and Raman spectroscopic data, the secondary phase was identified as an In-rich compound. On the contrary, (112)-oriented films were always obtained with a minimal amount of the secondary phase, and had a maximum grain size of about 0.5 micron. Electrical and optical properties of all the films grown were characterized. They all showed p-type conduction with an electrical resistivity between 0.1 and 30 Omega-cm, and an optical band gap of approximately 1.46 eV +/- 0.02, as deposited. The material properties of deposited films revealed this methodology of using SSPs for fabricating chalcopyrite-based solar cells to be highly promising.

Jin, Michael↗
NASA NTRS1978

A study of trends and techniques for space base electronics

A sputtering system was developed to deposit aluminum and aluminum alloys by the dc sputtering technique. This system is designed for a high level of cleanliness and for monitoring the deposition parameters during film preparation. This system is now ready for studying the deposition and annealing parameters upon double-level metal preparation. A technique recently applied for semiconductor analysis, the finite element method, was studied for use in the computer modeling of two dimensional MOS transistor structures. It was concluded that the method has not been sufficiently well developed for confident use at this time. An algorithm was developed for confident use at this time. An algorithm was developed for implementing a computer study which is based upon the finite difference method. The program which was developed was modified and used to calculate redistribution data for boron and phosphorous which had been predeposited by ion implantation with range and straggle conditions. Data were generated for 111 oriented SOS films with redistribution in N2, dry O2 and steam ambients.

Trotter, J. D.↗
NASA NTRS2022

A Reinforcement Learning Hyper-Heuristic in Multi-Objective Optimization with Application to Structural Damage Identification

Multi-objective optimization allows satisfying multiple decision criteria concurrently, and generally yields multiple solutions. It has the potential to be applied to structural damage identification applications which are oftentimes under-determined. How to achieve high-quality solutions in terms of accuracy, diversity, and completeness is a challenging research subject. The solution techniques and parametric selections are believed to be problem specific. In this research, we formulate a reinforcement learning hyper-heuristic scheme to work coherently with the single-point search algorithm MOSA/R (Multi-Objective Simulated Annealing Algorithm based on Re-seed). The four low-level heuristics proposed can meet various optimization requirements adaptively and autonomously using the domination amount, crowding distance, and hypervolume calculations. The new approach exhibits improved and more robust performance than AMOSA, NSGA-II, and MOEA/D when applied to benchmark test cases. It is then applied to an active damage interrogation scheme for structural damage identification where solution diversity/completeness and accuracy are critically important. Results show that this approach can successfully include the true damage scenario in the solution set identified. The outcome of this research can potentially be extended to a variety of applications.

Pei Cao↗
NASA NTRS1992

Slow-Positron Generator For Studying Polymer Films

Aspects of molecular structures probed by positron-annihilation spectroscopy (PAS). Slow-positron-beam generator suitable for PAS measurements in thin polymer films. Includes Na22 source of positrons and two moderators made of well-annealed tungsten foil. With proper choice of voltage, positrons emitted by inward-facing surfaces of moderators made to stop in polymer films tested.

Singh, Jag J.↗
NASA NTRS1987

A parallel simulated annealing algorithm for standard cell placement on a hypercube computer

A parallel version of a simulated annealing algorithm is presented which is targeted to run on a hypercube computer. A strategy for mapping the cells in a two dimensional area of a chip onto processors in an n-dimensional hypercube is proposed such that both small and large distance moves can be applied. Two types of moves are allowed: cell exchanges and cell displacements. The computation of the cost function in parallel among all the processors in the hypercube is described along with a distributed data structure that needs to be stored in the hypercube to support parallel cost evaluation. A novel tree broadcasting strategy is used extensively in the algorithm for updating cell locations in the parallel environment. Studies on the performance of the algorithm on example industrial circuits show that it is faster and gives better final placement results than the uniprocessor simulated annealing algorithms. An improved uniprocessor algorithm is proposed which is based on the improved results obtained from parallelization of the simulated annealing algorithm.

Jones, Mark Howard↗
NASA NTRS1978

Structure of deformed silicon and implications for low cost solar cells

The microstructure and minority carrier lifetime of silicon were investigated in uniaxially compressed silicon samples. The objective of the investigation was to determine if it is feasible to produce silicon solar cells from sheet formed by high temperature rolling. The initial structure of the silicon samples ranged from single crystal to fine-grained polycrystals. The samples had been deformed at strain rates of 0.1 to 8.5/sec and temperatures of 1270-1380 C with subsequent annealing at 1270-1380 C. The results suggest that high temperature rolling of silicon to produce sheet for cells of high efficiency is not practical.

Mardesich, N.↗
NASA NTRS2001

Low Temperature Ohmic Contact Formation of Ni2Si on N-type 4H-SiC and 6H-SiC

Nickel Silicide (Ni2Si) is investigated as possible ohmic contact to heavily nitrogen-doped N-type 4H-SiC and 6H-SiC. Nickel Silicide was deposited via electron gun with various thicknesses on both Si and C faces of the SiC substrates. The Ni2Si contacts were formed at room temperature as well as at elevated temperatures (400 to 1000 K). Contact resistivities and I-V characteristics were measured at temperatures between 100 and 700 C. To investigate the electric properties, I-V characteristics were studied and the Transmission Line Method (TLM) was used to determine the specific contact resistance for the samples at each annealing temperature. Both Rutherford Backscattering Spectroscopy (RBS) and Auger Electron Spectroscopy (AES) were used for depth profiling of the Ni2Si, Si, and C. X-ray Photoemission Spectroscopy (XPS) was used to study the chemical structure of the Ni2Si/SiC interface.

Elsamadicy, A. M.↗
NASA NTRS2003

Detection of Strand Cleavage And Oxidation Damage Using Model DNA Molecules Captured in a Nanoscale Pore

We use a biological nano-scale pore to distinguish among individual DNA hairpins that differ by a single site of oxidation or a nick in the sugar-phosphate backbone. In earlier work we showed that the protein ion channel alpha-hemolysin can be used as a detector to distinguish single-stranded from double-stranded DNA, single base pair and single nucleotide differences. This resolution is in part a result of sensitivity to structural changes that influence the molecular dynamics of nucleotides within DNA. The strand cleavage products we examined here included a 5-base-pair (5-bp) hairpin with a 5-prime five-nucleotide overhang, and a complementary five-nucleotide oligomer. These produced predictable shoulder-spike and rapid near-full blockade signatures, respectively. When combined, strand annealing was monitored in real time. The residual current level dropped to a lower discrete level in the shoulder-spike blockade signatures, and the duration lengthened. However, these blockade signatures had a shorter duration than the unmodified l0bp hairpin. To test the pore sensitivity to nucleotide oxidation, we examined a 9-bp hairpin with a terminal 8-oxo-deoxyguanosine (8-oxo-dG), or a penultimate 8-oxo-dG. Each produced blockade signatures that differed from the otherwise identical control 9bp hairpins. This study showed that DNA structure is modified sufficiently by strand cleavage or oxidation damage at a single site to alter in a predictable manner the ionic current blockade signatures produced. This technique improves the ability to assess damage to DNA, and can provide a simple means to help characterize the risks of radiation exposure. It may also provide a method to test radiation protection.

Vercoutere, W.↗
NASA NTRS1979

Automated Array Assembly, Phase 2

The large scale production of silicon solar cell array panels is discussed. The cost and performance of three manufacturing sequences designed to convert silicon sheet and wafers into solar panels is analyzed. The production of ion implanted and furnace annealed solar cells made using solar grade n- and p-type wafers is examined. The performance of production size lots is examined with regard to the relationship between the ion implant and furnace anneal parameters and the ability to form consistently good thick film screen printed contacts. The spray on antireflection coating process is evaluated. The performance of several lots of cells before and after coating is measured. The structure and refractive index of the RCA I (TiO2) coating is compared with commercial solutions. Sensitivity of coated, screen printed cells to the post heat treatment required to cure the films is assessed.

Daiello, R. V.↗
NASA NTRS2004

CuInS2 Films Deposited by Aerosol-Assisted Chemical Vapor Deposition Using Ternary Single-Source Precursors

Polycrystalline CuInS2 films were deposited by aerosol-assisted chemical vapor deposition using both solid and liquid ternary single-source precursors (SSPs) prepared in-house. Films with either (112) or (204/220) preferred orientation were obtained, and compositional analysis showed that (112)-oriented films contained more copper than (204/220)-oriented films. Using X-ray diffraction, the signature of chalcopyrite structure was often confirmed for (112)-oriented films. The preferred orientation of the film is likely related to the decomposition and reaction kinetics associated with the molecular structure of the precursors at the substrate. Interestingly, the (204/220)-oriented films were always accompanied by a secondary phase, which was identified as an unknown In-rich compound from the results of post-growth annealing, etching experiments, and Raman spectroscopic data. By increasing Cu to In ratio in the film, (112)-oriented films were obtained with a maximum grain size of about 0.5 micrometers, and their X-ray diffractions did not show any observable signature of the In secondary phase. Electrical and optical properties of all the films grown were characterized. They all showed p-type conduction with an electrical resistivity between 0.1 omega cm and 30 omega cm, and an optical band gap of 1.46eV +/- 0.02, as deposited. The material properties of deposited films revealed this methodology of using SSPs for fabricating chalcopyrite-based solar cells to be highly promising.

Jin, Michael H.-C.↗
NASA NTRS1989

Processing and microstructure of melt spun NiAl alloys

The influence of various melt spinning parameters and the effect of consolidation on the microstructure of melt spun NiAl and NiAl + W alloys have been examined by optical and electron microscopy techniques. It was found that the addition of 0.5 at. pct W to NiAl results in a fine dispersion of W particles after melt spinning which effectively controls grain growth during annealing treatments or consolidation at temperatures between 1523 and 1723 K. Increased wheel speeds are effective at reducing both the ribbon thickness and grain size, such that proper choice of both composition and casting parameters can produce structures with grain sizes as small as 2 microns. Finally, fabrication of continuous fiber-reinforced composites which used pulverized ribbon as the matrix material was demonstrated.

Locci, I. E.↗
NASA NTRS1980

Radiation tolerance of boron doped dendritic web silicon solar cells

The potential of dendritic web silicon for giving radiation hard solar cells is compared with the float zone silicon material. Solar cells with n(+)-p-P(+) structure and approximately 15% (AMl) efficiency were subjected to 1 MeV electron irradiation. Radiation tolerance of web cell efficiency was found to be at least as good as that of the float zone silicon cell. A study of the annealing behavior of radiation-induced defects via deep level transient spectroscopy revealed that E sub v + 0.31 eV defect, attributed to boron-oxygen-vacancy complex, is responsible for the reverse annealing of the irradiated cells in the temperature range of 150 to 350 C.

Rohatgi, A.↗
NASA NTRS1991

Electron irradiation effects in epitaxial InP solar cells

Performance data for InP-based solar cells after irradiation with 1-MeV electrons up to a fluence of 1 x 1016 e/cm2 are presented. Three InP cell structures are considered. Two of these have epitaxially grown active regions, these being a homojunction design and in ITO/InP structure. These are compared with ITO/InP cells without the epitaxial base region. The cell parameter variations, the influence of illumination during irradiation, and the effect on cell spectral response and capacitance measurements are discussed. Substantial performance recovery after thermal annealing at 90 C is reported.

Pearsall, N. M.↗
NASA NTRS2004

Hydrogen Passivation of Interstitial Zn Defects in Heteroepitaxial InP Cell Structures and Influence on Device Characteristics

Hydrogen passivation of heteroepitaxial InP solar cells is of recent interest for deactivation of dislocations and other defects caused by the cell/substrate lattice mismatch that currently limit the photovoltaic performance of these devices. In this paper we present strong evidence that, in addition to direct hydrogen-dislocation interactions, hydrogen forms complexes with the high concentration of interstitial Zn defects present within the p(+) Zn-doped emitter of MOCVD-grown heteroepitaxial InP devices, resulting in a dramatic increase of the forward bias turn-on voltage by as much as 280 mV, from ~680 mV to ~960 mV. This shift is reproducible and thermally reversible and no such effect is observed for either n(+)p structures or homoepitaxial p(+)n structures grown under identical conditions. A combination of photoluminescence (PL), electrochemical C-V dopant profiling, SIMS and I-V measurements were performed on a set of samples having undergone a matrix of hydrogenation and post-hydrogenation annealing conditions to investigate the source of this voltage enhancement and confirm the expected role of interstitial Zn and hydrogen. A precise correlation between all measurements is demonstrated which indicates that Zn interstitials within the p(+) emitter and their interaction with hydrogen are indeed responsible for this device behavior.

Ringel, S. A.↗
NASA NTRSDate not supplied

Simulating a Low-Weight Encoding of the Fermi-Hubbard Model Feedback and Support with QAOA

Recent work [1] has proposed a compact fermion-to-qubit mapping for the Fermi-Hubbard model (FHM), potentially lowering the overhead needed to simulate such a system on quantum hardware. In prior work [2], we numerically investigated how well a quantum annealer could prepare ground states of the FHM encoded using the resource-efficient mapping. In order to compare these results to gate-model systems, we turn to a QAOA-style approach and replace the annealing schedule with both Trotterizations thereof and also more general Hamiltonian-variational ansatze based on the terms of the mapped FH Hamiltonian. We investigate the achievable ground state fidelities of these gate sequences, consider various optimizations of the ansatze structure, and offer resource estimations of the optimized QAOA protocols for near-term hardware.

quantum computing↗
NASA NTRS1969

Superconductivity in zirconium-rhodium alloys

Metallographic studies and transition temperature measurements were made with isothermally annealed and water-quenched zirconium-rhodium alloys. The results clarify both the solid-state phase relations at the Zr-rich end of the Zr-Rh alloy system and the influence upon the superconducting transition temperature of structure and composition.

Zegler, S. T.↗