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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 217 records · Page 12
All sourcesNASA NTRSDOE OSTI
NASA NTRS2004

Advanced Computational Modeling of Vapor Deposition in a High-pressure Reactor

In search of novel approaches to produce new materials for electro-optic technologies, advances have been achieved in the development of computer models for vapor deposition reactors in space. Numerical simulations are invaluable tools for costly and difficult processes, such as those experiments designed for high pressures and microgravity conditions. Indium nitride is a candidate compound for high-speed laser and photo diodes for optical communication system, as well as for semiconductor lasers operating into the blue and ultraviolet regions. But InN and other nitride compounds exhibit large thermal decomposition at its optimum growth temperature. In addition, epitaxy at lower temperatures and subatmospheric pressures incorporates indium droplets into the InN films. However, surface stabilization data indicate that InN could be grown at 900 K in high nitrogen pressures, and microgravity could provide laminar flow conditions. Numerical models for chemical vapor deposition have been developed, coupling complex chemical kinetics with fluid dynamic properties.

Cardelino, Beatriz H.↗
NASA NTRS2004

Advanced Computational Modeling of Vapor Deposition in a High-Pressure Reactor

In search of novel approaches to produce new materials for electro-optic technologies, advances have been achieved in the development of computer models for vapor deposition reactors in space. Numerical simulations are invaluable tools for costly and difficult processes, such as those experiments designed for high pressures and microgravity conditions. Indium nitride is a candidate compound for high-speed laser and photo diodes for optical communication system, as well as for semiconductor lasers operating into the blue and ultraviolet regions. But InN and other nitride compounds exhibit large thermal decomposition at its optimum growth temperature. In addition, epitaxy at lower temperatures and subatmospheric pressures incorporates indium droplets into the InN films. However, surface stabilization data indicate that InN could be grown at 900 K in high nitrogen pressures, and microgravity could provide laminar flow conditions. Numerical models for chemical vapor deposition have been developed, coupling complex chemical kinetics with fluid dynamic properties.

Cardelino, Beatriz H.↗
NASA NTRS1984

Coupling coefficient of gain-guided lasers

An analytical model is presented for the coupling coefficient for two gain-guided coupled waveguides, e.g., semiconductor laser arrays. A common parabolic gain distribution is assumed for the lasers, and the effective dielectric constant distribution is approximated in terms of the bulk refraction index, wavelength, power filling factor, and the antiguiding factor. The fundamental mode is then formulated and used in an integral for the coupling coefficient. The dependence of the coefficient of various waveguide parameters is described.

Katz, J.↗
NASA NTRS1990

Coherent lightwave communications; Proceedings of the Meeting, Boston, MA, Sept. 7, 8, 1989

Various papers on coherent lightwave communications are presented. Individual topics addressed include: overview of coherent light wave communications, frequency stabilization techniques for coherent lightwave systems, characterization of laser diode intensity noise at microwave frequencies with high sensitivity, FP and DFB semiconductor lasers with arbitrary external optical feedback, birefringence-controlled phase-shifter, polarization diversity and scrambling techniques for coherent systems, polarization control scheme for coherent optical systems, simulation of IF filtering effects on the performance of coherent optical receivers. Also discussed are: performance of optical DPSK receivers in the presence of optical channel noise, optical heterodyne communications with polarization modulation, coherent fiber optical subcarrier multiplexed system, engineered rack-mounted coherent transmission system, technology aspects of a coherent optical MAN, broadband exchange by coherent multicarrier switching, generalized temporal CDMA for optical communications. Overviews are given of recent progress at individual companies.

Sunak, Harish R. D.↗
NASA NTRS2012

Forward voltage short-pulse technique for measuring high power laser array junction temperature

The present invention relates to a method of measuring the temperature of the P-N junction within the light-emitting region of a quasi-continuous-wave or pulsed semiconductor laser diode device. A series of relatively short and low current monitor pulses are applied to the laser diode in the period between the main drive current pulses necessary to cause the semiconductor to lase. At the sufficiently low current level of the monitor pulses, the laser diode device does not lase and behaves similar to an electronic diode. The voltage across the laser diode resulting from each of these low current monitor pulses is measured with a high degree of precision. The junction temperature is then determined from the measured junction voltage using their known linear relationship.

Meadows, Byron L.↗
NASA NTRS1987

Observations and consequences of nonuniform aluminum concentrations in the channel regions of AlGaAs channeled-substrate-planar lasers

Compositional changes in the n-clad layer within the channel region of channel substrate planar (CSP) type semiconductor lasers have been observed. As a consequece, a large optical cavity (LOC) or an enhanced substrate loss (ESL) version of the CSP geometry may result, both of which may have significantly different characteristics from those of a conventional CSP laser. The CSP-LOC generally has a larger near-field spot size, while the ESL-CSP is characterized by an off-axis, asymmetric far-field pattern.

Evans, Gary A.↗
NASA NTRS1992

Laser to single-mode-fiber coupling: A laboratory guide

All the information necessary to achieve reasonably efficient coupling of semiconductor lasers to single mode fibers is collected from the literature, reworked when necessary, and presented in a mostly tabular form. Formulas for determining the laser waist radius and the fiber mode radius are given. Imaging relations connecting these values with the object and image distances are given for three types of lenses: ball, hemisphere, and Gradient Index (GRIN). Sources for these lenses are indicated, and a brief discussion is given about ways of reducing feedback effects.

Ladany, I.↗
NASA NTRS1993

Optical communications and a comparison of optical technologies for a high data rate return link from Mars

The important principles of direct- and heterodyne-detection optical free-space communications are reviewed. Signal-to-noise-ratio (SNR) and bit-error-rate (BER) expressions are derived for both the direct-detection and heterodyne-detection optical receivers. For the heterodyne system, performance degradation resulting from received-signal and local oscillator-beam misalignment and laser phase noise is analyzed. Determination of interfering background power from local and extended background sources is discussed. The BER performance of direct- and heterodyne-detection optical links in the presence of Rayleigh-distributed random pointing and tracking errors is described. Finally, several optical systems employing Nd:YAG, GaAs, and CO2 laser sources are evaluated and compared to assess their feasibility in providing high-data-rate (10- to 1000-Mbps) Mars-to-Earth communications. It is shown that the root mean square (rms) pointing and tracking accuracy is a critical factor in defining the system transmitting laser-power requirements and telescope size and that, for a given rms error, there is an optimum telescope aperture size that minimizes the required power. The results of the analysis conducted indicate that, barring the achievement of extremely small rms pointing and tracking errors (less than 0.2 microrad), the two most promising types of optical systems are those that use an Nd:YAG laser (lambda = 1.064 microns) and high-order pulse position modulator (PPM) and direct detection, and those that use a CO2 laser (lambda = 10.6 microns) and phase shifting keying homodyne modulation and coherent detection. For example, for a PPM order of M = 64 and an rms pointing accuracy of 0.4 microrad, an Nd:YAG system can be used to implement a 100-Mbps Mars link with a 40-cm transmitting telescope, a 20-W laser, and a 10-m receiving photon bucket. Under the same conditions, a CO2 system would require 3-m transmitting and receiving telescopes and a 32-W laser to implement such a link. Other types of optical systems, such as a semiconductor laser systems, are impractical in the presence of large rms pointing errors because of the high power requirements of the 100-Mbps Mars link, even when optimal-size telescopes are used.

Spence, Rodney L.↗
NASA NTRS1991

Coherent Doppler lidar for automated space vehicle, rendezvous, station-keeping and capture

Recent advances in eye-safe, short wavelength solid-state lasers offer real potential for the development of compact, reliable, light-weight, efficient coherent lidar. Laser diode pumping of these devices has been demonstrated, thereby eliminating the need for flash lamp pumping, which has been a major drawback to the use of these lasers in space based applications. Also these lasers now have the frequency stability required to make them useful in coherent lidar, which offers all of the advantages of non-coherent lidar, but with the additional advantage that direct determination of target velocity is possible by measurement of the Doppler shift. By combining the Doppler velocity measurement capability with the inherent high angular resolution and range accuracy of lidar it is possible to construct Doppler images of targets for target motion assessment. A coherent lidar based on a Tm,Ho:YAG 2-micrometer wavelength laser was constructed and successfully field tested on atmospheric targets in 1990. This lidar incorporated an all solid state (laser diode pumped) master oscillator, in conjunction with a flash lamp pumped slave oscillator. Solid-state laser technology is rapidly advancing, and with the advent of high efficiency, high power, semiconductor laser diodes as pump sources, all-solid-state, coherent lidars are a real possibility in the near future. MSFC currently has a feasibility demonstration effort under way which will involve component testing, and preliminary design of an all-solid-state, coherent lidar for automatic rendezvous, and capture. This two year effort, funded by the Director's Discretionary Fund is due for completion in 1992.

Dunkin, James A.↗
NASA NTRS1992

Time-resolved far-field analysis of a high power single emitter laser diode

A system was developed which is capable of measuring the time-resolved far-field radiation patterns from a high-power semiconductor laser under intensity modulated conditions. Angular steering of the fundamental spatial mode was observed, with pointing variations as large as 0.5 deg, or 7.5 percent of the beamwidth, during the time of the optical pulse. The variations in pointing angle were directly related to gradients in the transverse index profile of the laser, which may oscillate based on lateral spatial hole burning of the gain and carrier density.

Cornwell, Donald M., Jr.↗
NASA NTRS1998

1.54 micron Emission from Erbium implanted GaN for Photonic Applications

The development of efficient and compact light sources operating at 1.54 micron is of enormous importance for the advancement of new optical communication systems. Erbium (1%) doped fiber amplifiers (EDFA's) or semiconductor lasers are currently being employed as near infrared light sources. Both devices, however, have inherent limitations due to their mode of operation. EDFA's employ an elaborate optical pumping scheme, whereas diode lasers have a strongly temperature dependent lasing wavelength. Novel light emitters based on erbium doped III-V semiconductors could overcome these limitations. Er doped semiconductors combine the convenience of electrical excitation with the excellent luminescence properties of Er(3+) ions. Electrically pumped, compact, and temperature stable optoelectronic devices are envisioned from this new class of luminescent materials. In this paper we discuss the potential of Er doped GaN for optoelectronic applications based on temperature dependent photoluminescence excitation studies.

Thaik, Myo↗
NASA NTRS2004

Growing High-Quality InAs Quantum Dots for Infrared Lasers

An improved method of growing high-quality InAs quantum dots embedded in lattice-matched InGaAs quantum wells on InP substrates has been developed. InAs/InGaAs/InP quantum dot semiconductor lasers fabricated by this method are capable of operating at room temperature at wavelengths greater than or equal to 1.8 mm. Previously, InAs quantum dot lasers based on InP substrates have been reported only at low temperature of 77 K at a wavelength of 1.9 micrometers. In the present method, as in the prior method, one utilizes metalorganic vapor phase epitaxy to grow the aforementioned semiconductor structures. The development of the present method was prompted in part by the observation that when InAs quantum dots are deposited on an InGaAs layer, some of the InAs in the InGaAs layer becomes segregated from the layer and contributes to the formation of the InAs quantum dots. As a result, the quantum dots become highly nonuniform; some even exceed a critical thickness, beyond which they relax. In the present method, one covers the InGaAs layer with a thin layer of GaAs before depositing the InAs quantum dots. The purpose and effect of this thin GaAs layer is to suppress the segregation of InAs from the InGaAs layer, thereby enabling the InAs quantum dots to become nearly uniform (see figure). Devices fabricated by this method have shown near-room-temperature performance.

Qiu, Yueming↗
NASA NTRS1977

Semiconductor ohmic contact

Contact formed on p-type surface of semiconductor laser has several advantages: highly conductive degenerate region and narrow band gap provides surface for good metal-to-semiconductor contact; lattice parameter of GaAs is 5.6533 A; improved lattice match eases interface strain which reduces interface cracking of semiconductor material.

Hawrylo, F. Z.↗
NASA NTRS2014

Characteristics of the Single-Longitudinal-Mode Planar-Waveguide External Cavity Diode Laser at 1064 nm

We describe the characteristics of the planar-waveguide external cavity diode laser (PW-ECL). To the best of our knowledge, it is the first butterfly-packaged 1064-nm semiconductor laser that is stable enough to be locked to an external frequency reference. We evaluated its performance from the viewpoint of precision experiments. Especially, using a hyperfine absorption line of iodine, we suppressed its frequency noise by a factor of up to104 at 10 mHz. The PW-ECLs compactness and low cost make it a candidate to replace traditional Nd:YAGnon-planar ring oscillators and fiber lasers in applications which require a single longitudinal-mode.

diode↗
NASA NTRS2014

Characteristics of the Single-Longitudinal-Mode Planar-Waveguide External Cavity Diode Laser at 1064 nm

We describe the characteristics of the planar-waveguide external cavity diode laser (PW-ECL). To the best of our knowledge, it is the first butterfly-packaged 1064 nm semiconductor laser that is stable enough to be locked to an external frequency reference. We evaluated its performance from the viewpoint of precision experiments. Using a hyperfine absorption line of iodine, we suppressed its frequency noise by a factor of up to 104 at 10 mHz. The PWECL's compactness and low cost make it a candidate to replace traditional Nd:YAG nonplanar ring oscillators and fiber lasers in applications that require a single longitudinal mode.

planar-waveguide↗
NASA NTRS1991

Spatiospectral and picosecond spatiotemporal properties of a broad area operating channeled-substrate-planar laser array

Spatiospectral and spatiotemporal properties of an eight-element channeled-substrate-planar laser array are investigated in both CW and pulsed operating conditions. The closely spaced CSP array with strong optical coupling between array elements is characterized by a broad area laserlike operation determined by its spatial mode spectra. The spatiotemporal evolution of the near and far field exhibits complex dynamic behavior in the picosecond to nanosecond domain. Operating parameters for the laser device have been experimentally determined. These results provide important information for the evaluation of the dynamic behavior of coherent semiconductor laser arrays.

Yu, NU↗